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公开(公告)号:DE10258201B4
公开(公告)日:2008-07-03
申请号:DE10258201
申请日:2002-12-12
Applicant: INFINEON TECHNOLOGIES AG , IBM
Inventor: RAJARAO JAMMY , KUDELKA STEPHAN , MACSTAY IRENE , RAHN STEPHEN , SCHROEDER UWE , TEWS HELMUT
IPC: H01L21/308 , H01L21/02 , H01L21/8242
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公开(公告)号:DE10258201A1
公开(公告)日:2003-07-10
申请号:DE10258201
申请日:2002-12-12
Applicant: INFINEON TECHNOLOGIES AG , IBM
Inventor: RAIARAO JAMMY , KUDELKA STEPHAN , MACSTAV IRENE , RAHN STEPHEN , SCHROEDER UWE , TEWS HELMUT
IPC: H01L21/02 , H01L21/8242 , H01L21/308
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公开(公告)号:NL1024332A1
公开(公告)日:2004-04-02
申请号:NL1024332
申请日:2003-09-19
Applicant: INFINEON TECHNOLOGIES AG
Inventor: DETTMANN WOLFGANG , MATHUNI JOSEF , FAGERER OLIVER , SCHIESSL BETTINA , RAHN STEPHEN
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公开(公告)号:DE10245159B4
公开(公告)日:2006-10-12
申请号:DE10245159
申请日:2002-09-27
Applicant: INFINEON TECHNOLOGIES AG
Inventor: DETTMANN WOLFGANG , MATHUNI JOSEF , FAGERER OLIVER , SCHIESSL BETTINA , RAHN STEPHEN
Abstract: A mask, especially a photo-mask for semiconductor device production comprises at least a product field region (6a) with a compensation structure outside this which at least comprises an electrically conductive region (8a,b) connected to the product field region, preferably by a rail of breadth especially between 5 and 25 microns. An Independent claim is also included for a mask production process for the above.
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公开(公告)号:DE10245159A1
公开(公告)日:2004-04-15
申请号:DE10245159
申请日:2002-09-27
Applicant: INFINEON TECHNOLOGIES AG
Inventor: DETTMANN WOLFGANG , MATHUNI JOSEF , FAGERER OLIVER , SCHIESSL BETTINA , RAHN STEPHEN
Abstract: A mask, especially a photo-mask for semiconductor device production comprises at least a product field region (6a) with a compensation structure outside this which at least comprises an electrically conductive region (8a,b) connected to the product field region, preferably by a rail of breadth especially between 5 and 25 microns. An Independent claim is also included for a mask production process for the above.
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