公开(公告)号：JPS6114798A

公开(公告)日：1986-01-22

申请号：JP1564885

申请日：1985-01-31

Applicant: Ibm

Inventor： LEVINE ERNEST NORMAN ,  LIPSCHUTZ LEWIS DRUCKER ,  QUINONES HORATIO

IPC: H05K3/34 ,  C25D21/14 ,  H01L21/60

CPC classification number: H01L24/81 ,  H01L2224/81801 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/3511 ,  H05K3/3436 ,  H01L2924/00

Abstract: Arrays of solder interconnections between a semiconductor device (10) and a supporting substrate (12) are annealed for a time in excess of one or several days below the solder melting temperature to relief stress and improve the fatigue failure of the interconnections.

公开(公告)号：JPS61177738A

公开(公告)日：1986-08-09

申请号：JP20460485

申请日：1985-09-18

Applicant: IBM

Inventor： BECKMAN KEITH FOWLER ,  KOLMAN ANNE ELIZABETH ,  MCGUIRE KATHLEEN MARY ,  PUTTLITZ KARL JOSEPH ,  QUINONES HORATIO

IPC: H01L21/60 ,  H01L21/56 ,  H05K3/28 ,  H05K3/34

公开(公告)号：CA1224576A

公开(公告)日：1987-07-21

申请号：CA483512

申请日：1985-06-07

Applicant: IBM

Inventor： BECKHAM KEITH F ,  KOLMAN ANNE E ,  MCGUIRE KATHLEEN M ,  PUTTLITZ KARL J ,  QUINONES HORATIO

IPC: H01L21/60 ,  H01L21/56 ,  H05K3/28 ,  H05K3/34

Abstract: Solder Interconnection Structure For Joining Semiconductor Devices To Substrates That Have Improved Fatigue Life, And Process For Making An improved solder interconnection for forming I/O connections between an integrated semiconductor device and a support substrate having a plurality of solder connections arranged in an area array joining a set of I/O's on a flat surface of the semiconductor device to a corresponding set of solder wettable pads on a substrate, the improvement being a band of dielectric organic material disposed between and bonded to the device and substrate embedding at least an outer row of solder connections leaving the center inner solder connections and the adjacent top and bottom surfaces free of dielectric material.

公开(公告)号：DE3675554D1

公开(公告)日：1990-12-20

申请号：DE3675554

申请日：1986-01-17

Applicant: IBM

Inventor： BECKHAM KEITH FOWLER ,  KOLMAN ANNE ELIZABETH ,  MCGUIRE KATHLEEN MARY ,  PUTTLITZ KARL JOSEPH ,  QUINONES HORATIO

IPC: H01L21/60 ,  H01L21/56 ,  H05K3/28 ,  H05K3/34

Abstract: An improved solder interconnection for forming 1/0 connections between an integrated semiconductor device and a support substrate having a plurality of solder connections arranged in an area array joining a set of I/O's on a flat surface of the semiconductor device to a corresponding set of solder wettable pads on a substrate, the improvement being a band of dielectric organic material disposed between and bonded to the device and substrate embedding at least an outer row of solder connections leaving the center inner solder connections and the adjacent top and bottom surfaces free of dielectric material.

公开(公告)号：CA2006229A1

公开(公告)日：1990-09-14

申请号：CA2006229

申请日：1989-12-20

Applicant: IBM

Inventor： BECKHAM KEITH F ,  CHALLENER DAVID C ,  GUPTA ARUNAVA ,  HARVILCHUCK JOSEPH M ,  LEAS JAMES M ,  LLOYD JAMES R ,  LONG DAVID C ,  QUINONES HORATIO ,  SESHAN KRISHNA ,  SHATZKES MORRIS

IPC: B23K26/00 ,  H01L21/3205 ,  H01L21/82 ,  H01L23/52 ,  H01L23/525 ,  H05K3/22 ,  G01R31/26

Abstract: METHOD AND APPARATUS FOR CAUSING AN OPEN CIRCUIT IN A CONDUCTIVE LINE A method for causing an open circuit in an electrical conductor is provided, including the steps of: conducting a direct current through the conductor; and applying heat at a selected location on the conductor whereat it is desired to cause the open circuit of the conductor. . FI9-88-027

公开(公告)号：DE3570154D1

公开(公告)日：1989-06-15

申请号：DE3570154

申请日：1985-06-13

Applicant: IBM

Inventor： LEVINE ERNEST NORMAN ,  LIPSCHUTZ LEWIS DRUCKER ,  QUINONES HORATIO

IPC: H05K3/34 ,  C25D21/14 ,  H01L21/60 ,  H01L21/92 ,  H01L21/324

Abstract: Arrays of solder interconnections between a semiconductor device (10) and a supporting substrate (12) are annealed for a time in excess of one or several days below the solder melting temperature to relief stress and improve the fatigue failure of the interconnections.