Abstract:
The present invention relates to a particle beam mass spectrometer and particle measurement method by means of same. More particularly, the present invention relates to a particle beam mass spectrometer including: a particle focusing unit focusing a particle beam induced by gas flow; an electron gun forming a charged particle beam by accelerating thermal electrons to ionize the particle beam focused by the particle focusing unit; a deflector deflecting the charged particle beam according to kinetic energy to charge ratio; and a sensing unit measuring a current induced by the deflected charged particle beam, wherein the deflector includes at least one particle beam separation electrode provided at each of opposite sides with respect to a progress axis of the charged particle beam before being deflected.
Abstract:
A vacuum sample chamber for a particle and optical device includes on one surface thereof, an aperture through which a particle beam to be focused along an optical axis of particles such as electrons, ions and neutral particles is incident; and on the opposite surface thereof, a detachable sample holder through which light penetrates, thereby enabling a sample to be observed and analyzed by means of the particle beam and light. A sample chamber is capable of reducing observation time by maintaining a vacuum therein even when a sample is put into or taken out from a sample chamber of an electron microscope or focused ion beam observation equipment, and capable of obtaining an optical image on the outside thereof without inserting a light source or an optical barrel into the sample chamber. A light-electron fusion microscope comprising the sample chamber.
Abstract:
According to one embodiment of the present invention, an ion source includes: an anode tube in which gas flowing in through one side is ionized and discharged to the other side and in which a slit is formed on the outer circumference thereof; a filament which emits thermal electrons toward the slit so as to ionize the gas; and a diffusion-preventing body arranged between the filament and the slit and having at least one hole through which the thermal electrons can pass so as to reduce the diffusion of the thermal electrons flowing into the anode tube.
Abstract:
The movement-free bending method means the one of deformation methods for a one- or two-dimensional nanostructures using an ion beam capable of bending and deforming them and furthermore, changing a bending direction without requiring a motion such as a rotation of the nanostructures. The present invention affords a movement-free bending method for deforming the nanostructure 20 having the one-dimensional or two-dimensional shape by irradiating the ion beam 10, wherein a bending direction of the nanostructure 20 is controlled depending on energy of the ion beam 10 or a thickness of the nanostructure 20.
Abstract:
Disclosed herein are a monochromator and a charged particle beam apparatus including the same. The monochromator may include a first electrostatic lens configured to have a charged particle beam discharged by an emitter incident on the first electrostatic lens, refract a ray of the charged particle beam, and include a plurality of electrodes and a second electrostatic lens spaced apart from the first electrostatic lens at a specific interval and configured to have a central axis disposed identically with a central axis of the first electrostatic lens, have the charged particle beam output by the first electrostatic lens incident on the second electrostatic lens, refract the ray of the charged particle beam, and comprise a plurality of electrodes. Accordingly, there is an advantage in that a charged particle beam can have an excellent profile even after passing through the monochromator.
Abstract:
The movement-free bending method means the one of deformation methods for a one- or two-dimensional nanostructures using an ion beam capable of bending and deforming them and furthermore, changing a bending direction without requiring a motion such as a rotation of the nanostructures. The present invention affords a movement-free bending method for deforming the nanostructure 20 having the one-dimensional or two-dimensional shape by irradiating the ion beam 10, wherein a bending direction of the nanostructure 20 is controlled depending on energy of the ion beam 10 or a thickness of the nanostructure 20.