公开(公告)号：SG10201405532WA

公开(公告)日：2015-04-29

申请号：SG10201405532W

申请日：2014-09-05

Applicant: LAM RES CORP

Inventor： TAN SAMANTHA S H ,  KABANSKY ALEXANDER ,  GUHA JOYDEEP

Abstract: A solution for processing devices is provided, comprising an activator comprising at least one of pyridine, pyrole, pyrrolidine, pyrimidine, N,N-dimethylformamide, tetraethylamine chloride, 4 pyridinethiol, or other organic compounds with a single N with a lone pair electron activator and an etchant comprising at least one of thionly chloride, Cl2, Br2, I2, SOF2, SOF4, SO2Cl2, SOBr2, S2O6F2, HSO3F, or C2Cl4O2.

公开(公告)号：SG10201600099VA

公开(公告)日：2016-08-30

申请号：SG10201600099V

申请日：2016-01-07

Applicant: LAM RES CORP

Inventor： KANARIK KEREN JACOBS ,  MARKS JEFFREY ,  SINGH HARMEET ,  TAN SAMANTHA ,  KABANSKY ALEXANDER ,  YANG WENBING ,  KIM TAESEUNG ,  HAUSMANN DENNIS M ,  LILL THORSTEN

Abstract: Methods are provided for integrating atomic layer etch and atomic layer deposition by performing both processes in the same chamber or reactor. Methods involve sequentially alternating between atomic layer etch and atomic layer deposition processes to prevent feature degradation during etch, improve selectivity, and encapsulate sensitive layers of a semiconductor substrate.