公开(公告)号：SG10201606891SA

公开(公告)日：2017-03-30

申请号：SG10201606891S

申请日：2016-08-18

Applicant: LAM RES CORP

Inventor： YANG WENBING ,  TAN SAMANTHA ,  KANARIK KEREN JACOBS ,  MARKS JEFFREY ,  KIM TAESEUNG ,  SHEN MEIHUA ,  LILL THORSTEN

Abstract: Provided herein are methods of atomic layer etching (ALE) of metals including tungsten (W) and cobalt (Co). The methods disclosed herein provide precise etch control down to the atomic level, with etching a low as 1 Å to 10 Å per cycle in some embodiments. In some embodiments, directional control is provided without damage to the surface of interest. The methods may include cycles of a modification operation to form a reactive layer, followed by a removal operation to etch only this modified layer. The modification is performed without spontaneously etching the surface of the metal.

公开(公告)号：SG10201603090VA

公开(公告)日：2016-11-29

申请号：SG10201603090V

申请日：2016-04-19

Applicant: LAM RES CORP

Inventor： TAN SAMANTHA ,  KIM TAESEUNG ,  YANG WENBING ,  MARKS JEFFREY ,  LILL THORSTEN

公开(公告)号：SG10201600099VA

公开(公告)日：2016-08-30

申请号：SG10201600099V

申请日：2016-01-07

Applicant: LAM RES CORP

Inventor： KANARIK KEREN JACOBS ,  MARKS JEFFREY ,  SINGH HARMEET ,  TAN SAMANTHA ,  KABANSKY ALEXANDER ,  YANG WENBING ,  KIM TAESEUNG ,  HAUSMANN DENNIS M ,  LILL THORSTEN

Abstract: Methods are provided for integrating atomic layer etch and atomic layer deposition by performing both processes in the same chamber or reactor. Methods involve sequentially alternating between atomic layer etch and atomic layer deposition processes to prevent feature degradation during etch, improve selectivity, and encapsulate sensitive layers of a semiconductor substrate.