公开(公告)号：JP2009210577A

公开(公告)日：2009-09-17

申请号：JP2009044343

申请日：2009-02-26

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： BEHRINGER MARTIN RUDOLF ,  HEERLEIN JOERG ,  LUFT JOHANN

IPC: G01S7/48 ,  G01C3/06 ,  G01S17/93 ,  H01S5/00 ,  H01S5/22

CPC classification number: G01V8/20 ,  H01S5/2036 ,  H01S5/227 ,  H01S5/3095 ,  H01S5/4018 ,  H01S5/4043 ,  H01S5/4087

Abstract: PROBLEM TO BE SOLVED: To provide a sensor system having a detecting device and lighting systems and usable in many fields.
SOLUTION: In the sensor system S having the lighting systems 1, 3 and the detecting device D, the lighting systems are constituted to radiate laser beams L11, L12 of first wavelength and laser beams L21, L22 of second wavelength different from the first wavelength, and the detecting device is constituted to detect electromagnetic beams of the first and second wavelength.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供具有检测装置和照明系统的传感器系统，并且可用于许多领域。 解决方案：在具有照明系统1,3和检测装置D的传感器系统S中，照明系统被构造成照射第一波长的激光束L11，L12和不同于第二波长的第二波长的激光束L21，L22 第一波长，并且检测装置被构造成检测第一和第二波长的电磁波。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：DE19963807A1

公开(公告)日：2001-07-19

申请号：DE19963807

申请日：1999-12-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： HEERLEIN JOERG ,  GRUBER STEFAN ,  UNGER PETER

IPC: H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/227

Abstract: The invention concerns a stripe laser diode element exhibiting longitudinal direction of propagation in the main direction of propagation of a laser light and having contacts in longitudinal direction of propagation on one surface with the purpose of impressing a current on the element. The surface in defined by edges crosswise to the longitudinal direction. An absorption region is formed in the area of said edges.

公开(公告)号：DE102007019576A1

公开(公告)日：2008-04-03

申请号：DE102007019576

申请日：2007-04-25

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： BEHRINGER MARTIN ,  EBERHARD FRANZ ,  MORGOTT STEFAN ,  SCHMITT ALEXIS ,  HEERLEIN JOERG

IPC: H05K7/20 ,  H01L23/34 ,  H01L23/46 ,  H01L23/473 ,  H01S5/024

Abstract: The module support (2) has an electrically insulating support body (4) with an upper side (5) and a lower side (6) facing away from the upper side. A cooling channel runs in the support body and guides a cooling agent for the cooling of the component (3). An electrical connection point for an electric conducting connection of the component is formed with the module support at the support body. Independent claims are also included for the following: (1) a module arrangement (2) a kit for module arrangement.

公开(公告)号：DE102007051167A1

公开(公告)日：2009-03-19

申请号：DE102007051167

申请日：2007-10-25

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： LUFT JOHANN ,  BEHRINGER MARTIN RUDOLF ,  HEERLEIN JOERG ,  MUELLER MARTIN

IPC: H01S5/40 ,  G01N21/39 ,  H01S5/20 ,  H01S5/34

Abstract: The laser has a monolithic layer stack (1) attached on a substrate (SU) e.g. gallium antimony substrate, where semiconductor laser layer systems (2, 3) of the monolithic layer stack produce laser radiation of preset wavelengths. The laser systems have active zones with a layer, and a tunnel junction (4) is provided in an intermediate layer. The laser systems and the intermediate layer are electrically connected in series above the stack, so that one of the wavelengths is not equal to the other wavelength. An independent claim is also included for a method for manufacturing a semiconductor laser.

公开(公告)号：DE50112049D1

公开(公告)日：2007-03-29

申请号：DE50112049

申请日：2001-12-12

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： ACKLIN BRUNO ,  BEHRINGER MARTIN ,  EBELING KARL ,  HANKE CHRISTIAN ,  HEERLEIN JOERG ,  KORTE LUTZ ,  LUFT JOHANN ,  SCHLERETH KARL-HEINZ ,  SPAETH WERNER ,  SPIKA ZELJKO

IPC: H01S5/16 ,  H01S5/042 ,  H01S5/227

Abstract: A semiconductor laser has a semiconductor body with first and second main areas, preferably each provided with a contact area, and also first and second mirror areas. An active layer and a current-carrying layer are formed between the main areas. The current-carrying layer has at least one strip-type resistance region, which runs transversely with respect to the resonator axis and whose sheet resistivity is increased at least in partial regions compared with the regions of the current-carrying layer that adjoin the resistance region.

公开(公告)号：DE10305009A1

公开(公告)日：2004-09-02

申请号：DE10305009

申请日：2003-02-07

Applicant: BOSCH GMBH ROBERT ,  HELLA KG HUECK & CO ,  OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： SEGER ULRICH ,  APEL UWE ,  SCHICK JENS ,  ABEL BJOERN ,  BUNG MICHAEL ,  HEERLEIN JOERG

IPC: B60Q1/14 ,  H04N5/33 ,  H04N7/18 ,  B60R1/10

公开(公告)号：DE102007003832A1

公开(公告)日：2008-04-03

申请号：DE102007003832

申请日：2007-01-25

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： HEERLEIN JOERG ,  STEEGMUELLER ULRICH ,  KUEHNELT MICHAEL

IPC: H01S5/183 ,  G01S7/484 ,  H01S5/04 ,  H01S5/14

Abstract: The semiconductor laser (1000) has a semiconductor chip (1), a resonator mirror (4) and another resonator mirror (8), which is arranged outside the semiconductor chip. The resonator mirror (4) forms a laser resonator with a resonator length (L), and a pumping laser (10) is provided for optical pumping of the semiconductor laser to radiate a pumping radiation (14) in individual pumping pulses into the semiconductor chip, where the resonator length is smaller than or equal to 10 millimeters. An independent claim is also included for a method for the production of a majority of surface-emitting semiconductor lasers.

公开(公告)号：DE50014266D1

公开(公告)日：2007-05-31

申请号：DE50014266

申请日：2000-12-22

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： GRUBER STEFAN ,  HEERLEIN JOERG ,  UNGER PETER

IPC: H01S5/223 ,  H01S5/20 ,  H01S5/22 ,  H01S5/227

公开(公告)号：DE10061701A1

公开(公告)日：2002-06-27

申请号：DE10061701

申请日：2000-12-12

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： ACKLIN BRUNO ,  BEHRINGER MARTIN ,  LUFT JOHANN ,  SPAETH WERNER ,  HEERLEIN JOERG ,  SPIKA ZELJKO ,  SCHLERETH KARL-HEINZ ,  KORTE LUTZ ,  HANKE CHRISTIAN ,  EBELING KARL

IPC: H01S5/042 ,  H01S5/16 ,  H01S5/227 ,  H01S5/22

Abstract: The invention relates to a semiconductor laser with a semiconductor body (1) that comprises a first and a second main surface, preferably provided with one contact surface (2,3) each, and a first and a second mirror surface (6,7). An active layer (4) and a current-carrying layer (5) are interposed between the main surfaces. The current carrying layer (5) has at least one strip-shaped resistance zone (8) that runs at an angle to the resonator axis (18) and whose specific surface resistance is higher in at least some zones than in the zones of the current carrying layer (5) adjoining the resistance zone (8).

公开(公告)号：DE102008022941A1

公开(公告)日：2009-09-03

申请号：DE102008022941

申请日：2008-05-09

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： BEHRINGER MARTIN RUDOLF ,  HEERLEIN JOERG ,  LUFT JOHANN

IPC: G01J1/08 ,  G01V8/10 ,  H01L31/12 ,  H01S5/34 ,  H01S5/40

Abstract: A sensor system with a lighting device and a detector device is specified. The lighting device is provided for emitting laser radiation of a first wavelength and laser radiation of a second wavelength different from the first. The detector device is provided for detecting electromagnetic radiation of the first and the second wavelength.