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公开(公告)号：CA2356323A1
公开(公告)日：2001-05-10
申请号：CA2356323
申请日：2000-11-02
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： HANKE CHRISTIAN , SPIKA ZELJKO , SPATH WERNER , SCHLERETH KARL-HEINZ , ACKLIN BRUNO , LUFT JOHANN , HEERLEIN JORG , BEHRINGER MARTIN , KORTE LUTZ , EBELING KARL
Abstract: The invention relates to a laser diode device with a laser diode chip (4) th at is mounted in a housing (1) for a light-emitting diode. Said laser diode chi p (4) is structured as a multi-beam laser diode (L1, L2) the terminals of whic h are linked with the terminal of the LED housing.
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公开(公告)号：DE10061701A1
公开(公告)日：2002-06-27
申请号：DE10061701
申请日：2000-12-12
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： ACKLIN BRUNO , BEHRINGER MARTIN , LUFT JOHANN , SPAETH WERNER , HEERLEIN JOERG , SPIKA ZELJKO , SCHLERETH KARL-HEINZ , KORTE LUTZ , HANKE CHRISTIAN , EBELING KARL
Abstract: The invention relates to a semiconductor laser with a semiconductor body (1) that comprises a first and a second main surface, preferably provided with one contact surface (2,3) each, and a first and a second mirror surface (6,7). An active layer (4) and a current-carrying layer (5) are interposed between the main surfaces. The current carrying layer (5) has at least one strip-shaped resistance zone (8) that runs at an angle to the resonator axis (18) and whose specific surface resistance is higher in at least some zones than in the zones of the current carrying layer (5) adjoining the resistance zone (8).
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公开(公告)号：DE102006033502A1
公开(公告)日：2007-11-15
申请号：DE102006033502
申请日：2006-07-19
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： HAERLE VOLKER , SPIKA ZELJKO
Abstract: A radiation-emitting semiconductor body with a carrier substrate. A structured connection is produced between a semiconductor layer sequence (2) and a carrier substrate wafer (1). The semiconductor layer sequence is subdivided into a plurality of semiconductor layer stacks (200) by means of cuts (6) through the semiconductor layer sequence, and the carrier substrate wafer (1) is subdivided into a plurality of carrier substrates (100) by means of cuts (7) through the carrier substrate wafer (1). In the method, the structured connection is formed in such a way that at least one semiconductor layer stack (200) is connected to one and only one associated carrier substrate (100). In addition, at least one cut (7) through the carrier substrate wafer is not extended by any of the cuts (6) through the semiconductor layer sequence such that a straight cut results through the carrier substrate wafer and the semiconductor layer sequence.
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Patent Agency Ranking
公开(公告)号：DE50112049D1
公开(公告)日：2007-03-29
申请号：DE50112049
申请日：2001-12-12
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： ACKLIN BRUNO , BEHRINGER MARTIN , EBELING KARL , HANKE CHRISTIAN , HEERLEIN JOERG , KORTE LUTZ , LUFT JOHANN , SCHLERETH KARL-HEINZ , SPAETH WERNER , SPIKA ZELJKO
Abstract: A semiconductor laser has a semiconductor body with first and second main areas, preferably each provided with a contact area, and also first and second mirror areas. An active layer and a current-carrying layer are formed between the main areas. The current-carrying layer has at least one strip-type resistance region, which runs transversely with respect to the resonator axis and whose sheet resistivity is increased at least in partial regions compared with the regions of the current-carrying layer that adjoin the resistance region.
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公开(公告)号：DE50011296D1
公开(公告)日：2006-02-16
申请号：DE50011296
申请日：2000-11-02
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： LUFT JOHANN , ACKLIN BRUNO , HEERLEIN JOERG , SCHLERETH KARL-HEINZ , SPAETH WERNER , SPIKA ZELJKO , HANKE CHRISTIAN , KORTE LUTZ , EBELING KARL , BEHRINGER MARTIN
IPC: H01S5/40 , H01L25/075 , H01L33/48 , H01S5/022
Abstract: The invention relates to a laser diode device with a laser diode chip (4) that is mounted in a housing (1) for a light-emitting diode. Said laser diode chip (4) is structured as a multi-beam laser diode (L1, L2) the terminals of which are linked with the terminal of the LED housing.
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公开(公告)号：AT306133T
公开(公告)日：2005-10-15
申请号：AT00987065
申请日：2000-11-02
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： LUFT JOHANN , ACKLIN BRUNO , HEERLEIN JOERG , SCHLERETH KARL-HEINZ , SPAETH WERNER , SPIKA ZELJKO , HANKE CHRISTIAN , KORTE LUTZ , EBELING KARL , BEHRINGER MARTIN
IPC: H01S5/40 , H01L25/075 , H01L33/48 , H01S5/022
Abstract: The invention relates to a laser diode device with a laser diode chip (4) that is mounted in a housing (1) for a light-emitting diode. Said laser diode chip (4) is structured as a multi-beam laser diode (L1, L2) the terminals of which are linked with the terminal of the LED housing.
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7.发明申请SEMICONDUCTOR LASER WITH LATERAL CURRENT CONDUCTION AND METHOD FOR PRODUCING THE SAME 审中-公开与横向现任领导和方法半导体激光器及其
公开(公告)号：WO0249168A3
公开(公告)日：2003-01-16
申请号：PCT/DE0104687
申请日：2001-12-12
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH , ACKLIN BRUNO , BEHRINGER MARTIN , EBELING KARL , HANKE CHRISTIAN , HEERLEIN JOERG , KORTE LUTZ , LUFT JOHANN , SCHLERETH KARL-HEINZ , SPAETH WERNER , SPIKA ZELJKO
Inventor： ACKLIN BRUNO , BEHRINGER MARTIN , EBELING KARL , HANKE CHRISTIAN , HEERLEIN JOERG , KORTE LUTZ , LUFT JOHANN , SCHLERETH KARL-HEINZ , SPAETH WERNER , SPIKA ZELJKO
CPC classification number: H01S5/16 , H01S5/0421 , H01S5/168 , H01S5/2275
Abstract: The invention relates to a semiconductor laser with a semiconductor body (1) that comprises a first and a second main surface, preferably provided with one contact surface (2,3) each, and a first and a second mirror surface (6,7). An active layer (4) and a current-carrying layer (5) are interposed between the main surfaces. The current carrying layer (5) has at least one strip-shaped resistance zone (8) that runs at an angle to the resonator axis (18) and whose specific surface resistance is higher in at least some zones than in the zones of the current carrying layer (5) adjoining the resistance zone (8).
Abstract translation: 本发明描述了具有第一和第二，优选在每种情况下与设置以及第一和第二反射镜表面（6,7）的主表面的接触表面（2,3）的半导体主体（1）的半导体激光器。 的有源层（4）和一个电流传导层（5）的主表面之间形成。 电流导通层（5）具有至少一个带状横向于上行驶阻力区中的谐振器轴线（18）（8），其薄层电阻至少比增加了电阻区域（8）在一些地区电流传导层（5）的相邻区域。
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公开(公告)号：WO0133607A3
公开(公告)日：2001-10-25
申请号：PCT/DE0003852
申请日：2000-11-02
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH , LUFT JOHANN , ACKLIN BRUNO , HEERLEIN JOERG , SCHLERETH KARL HEINZ , SPAETH WERNER , SPIKA ZELJKO , HANKE CHRISTIAN , KORTE LUTZ , EBELING KARL , BEHRINGER MARTIN
Inventor： LUFT JOHANN , ACKLIN BRUNO , HEERLEIN JOERG , SCHLERETH KARL-HEINZ , SPAETH WERNER , SPIKA ZELJKO , HANKE CHRISTIAN , KORTE LUTZ , EBELING KARL , BEHRINGER MARTIN
IPC: H01S5/40 , H01L25/075 , H01L33/48 , H01S5/022
CPC classification number: H01L33/486 , H01L25/0756 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/181 , H01S5/02228 , H01S5/02244 , H01S5/02292 , H01S5/3095 , H01S5/4043 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
Abstract: The invention relates to a laser diode device with a laser diode chip (4) that is mounted in a housing (1) for a light-emitting diode. Said laser diode chip (4) is structured as a multi-beam laser diode (L1, L2) the terminals of which are linked with the terminal of the LED housing.
Abstract translation: 它是一种具有激光二极管芯片（4），提供了一种激光二极管设备，该设备被安装在用于发光二极管外壳（1），其中，所述激光二极管芯片（4）的多光束激光二极管的结构（L1，L2），其连接与触点 LED外壳的端子连接。
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