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    End surface emitting semiconductor laser comprising plurality of monolithically integrated laser diodes
    1.
    发明专利
    End surface emitting semiconductor laser comprising plurality of monolithically integrated laser diodes 审中-公开
    单面激光二极管的多面体结束表面发射半导体激光

    公开(公告)号：JP2008085339A

    公开(公告)日：2008-04-10

    申请号：JP2007249247

    申请日：2007-09-26

    Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

    Inventor： BRICK PETER ,  LUFT JOHANN ,  MUELLER MARTIN ,  PHILIPPENS MARC

    IPC: H01S5/40

    CPC classification number: H01S5/4043 ,  B82Y20/00 ,  H01S5/02461 ,  H01S5/0421 ,  H01S5/2004 ,  H01S5/3095 ,  H01S5/3213 ,  H01S5/34 ,  H01S5/4018 ,  H01S5/4087

    Abstract: PROBLEM TO BE SOLVED: To achieve improved radiation of heat generated by each of laser diodes, and reduced temperature difference in active bands of the laser diodes, at comparatively little manufacturing cost, in an end surface emitting that includes laser diodes 1, 2, and 3 having active bands 11, 12, and 13, respectively, each of which is arranged between waveguide layers 6; a waveguide layer that is brought into contact with coating layers 7 and 8 in the side opposite to the active band; the coating layers including an inside coating layer 7 positioned above the active band 11 located at the lowest position and positioned below the active band 13 located at the uppermost position, and an outside coating layer 8 positioned below the active band located at the lowest position or positioned above the active band located at the uppermost position.
    SOLUTION: In the end surface emitting semiconductor laser, the inside coating layer (7) is slightly thicker than the outside coating layer (8).
    COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题：为了实现由激光二极管产生的热量的改善的辐射，并且在相对较小的制造成本下，在包括激光二极管1的发射端面中降低激光二极管的有效频带的温度差， 2和3分别具有有源频带11,12和13，它们各自布置在波导层6之间; 在与有源带相反的一侧与涂层7和8接触的波导层; 涂覆层包括位于位于最低位置并位于位于最上位置的有源带13下方的有源带11上方的内涂层7和位于最低位置处的有源带下方的外涂层8，或 位于位于最上位置的有源频带上方。 解决方案：在端面发射半导体激光器中，内涂层（7）比外涂层（8）稍厚。 版权所有（C）2008，JPO＆INPIT

    Laser device and semiconductor laser for optically pumping laser
    3.
    发明专利
    Laser device and semiconductor laser for optically pumping laser 审中-公开
    激光器件和半导体激光器用于光学泵浦激光器

    公开(公告)号：JP2008085346A

    公开(公告)日：2008-04-10

    申请号：JP2007253995

    申请日：2007-09-28

    Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

    Inventor： KOENIG HARALD ,  LUFT JOHANN ,  MUELLER MARTIN ,  PHILIPPENS MARC

    IPC: H01S3/0933 ,  H01S5/343

    CPC classification number: H01S5/4043 ,  B82Y20/00 ,  H01S3/0604 ,  H01S3/067 ,  H01S3/094096 ,  H01S3/0941 ,  H01S3/09415 ,  H01S5/3095 ,  H01S5/343 ,  H01S5/4018 ,  H01S5/4087

    Abstract: PROBLEM TO BE SOLVED: To provide an improved laser device which consists of a laser to be optically pumped and a semiconductor laser for optically pumping the laser, wherein the device has improved efficiency in optical pumping; the structure size of the laser device is relatively small; and manufacturing cost is relatively low, and to provide a semiconductor laser advantageous in optically pumping the laser. SOLUTION: In the laser device, the semiconductor laser comprises a plurality of active regions integrated monolithically and arranged in a stack, and at least two or more active regions emit pumping beam of different wavelengths. The semiconductor laser has a plurality of active regions integrated monolithically and arranged in the stack, and at least two or more active regions emit pumping beam of different wavelengths. COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种由要被光学泵浦的激光器和用于光学泵浦激光器的半导体激光器组成的改进的激光器件，其中该器件具有提高的光泵浦效率; 激光装置的结构尺寸相对较小; 并且制造成本相对较低，并且提供有利于光学泵浦激光器的半导体激光器。 解决方案：在激光装置中，半导体激光器包括整体地集成并且被布置在堆叠中的多个有源区域，并且至少两个或更多个有源区域发射不同波长的泵浦光束。 半导体激光器具有整体地集成并且布置在堆叠中的多个有源区域，并且至少两个或更多个有源区域发射不同波长的泵浦光束。 版权所有（C）2008，JPO＆INPIT

    STACKED SEMICONDUCTOR LASER DIODE
    6.
    发明申请
    STACKED SEMICONDUCTOR LASER DIODE 审中-公开
    关于每个堆叠半导体二极管

    公开(公告)号：WO0243204A3

    公开(公告)日：2003-10-16

    申请号：PCT/DE0104350

    申请日：2001-11-20

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  BEHRINGER MARTIN ,  EBELING KARL ,  KNOEDL THOMAS ,  LUFT JOHANN

    Inventor： BEHRINGER MARTIN ,  EBELING KARL ,  KNOEDL THOMAS ,  LUFT JOHANN

    IPC: H01S5/32 ,  H01S5/40 ,  H01S5/00

    CPC classification number: H01S5/4043 ,  H01S5/3095 ,  H01S5/3201 ,  H01S5/4087

    Abstract: The invention relates to an assembly of stacked semiconductor laser diodes, arranged on a substrate (1). A first laser diode (12) is positioned on the substrate (1) and a second laser diode (13) is positioned on top of the first laser diode (12). A contact layer (6) is located between the first laser diode (12) and the second laser diode (13). The contact layer (6) comprises a first conductive layer (18) of a first conductivity type, a second conductive layer (20) of a second conductivity type and an intermediate layer (19), which is located between the first and the second conductive layers (18, 20).

    Abstract translation: 本发明涉及一种层叠的半导体二极管激光器，其被配置在基板（1）上的布置。 第一二极管激光器（12）的衬底（1）和第二二极管激光器（13）上布置在所述第一二极管（12）。 第一二极管（12）和第二二极管（13）之间设置的接触层（6）。 接触层（6）包括设置在第一和第二导电层之间的第一导电类型和第二导电类型的第二导电层（20）和中间层（19）的第一导电层（18）（18，20） ，

    9.
    发明专利
    未知

    公开(公告)号：DE102006061532A1

    公开(公告)日：2008-04-03

    申请号：DE102006061532

    申请日：2006-12-27

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： BRICK PETER ,  LUFT JOHANN ,  MUELLER MARTIN ,  PHILIPPENS MARC

    IPC: H01S5/40 ,  H01S5/024 ,  H01S5/20 ,  H01S5/34

    Abstract: The laser has multiple active zones (11, 12, 13), where each zone is arranged between waveguide layers (6). The waveguide layers adjoin multiple cladding layers at a side that is turned away from the zones. The cladding layers exhibit inner cladding layers (7) that are arranged above the lowest active zone (11) and below the top-most active zone (13). The cladding layers exhibit outer cladding layers (8) that are arranged below the lowest active zone and above the top-most active zone, where the inner cladding layers exhibit a small thickness than the outer cladding layers.

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