公开(公告)号：JP2009260357A

公开(公告)日：2009-11-05

申请号：JP2009099377

申请日：2009-04-15

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： EBERHARD FRANZ ,  HAHN BERTHOLD ,  KAISER STEPHAN ,  MAYER BERND

IPC: H01S5/028 ,  H01L33/30 ,  H01L33/44

CPC classification number: H01L33/44 ,  H01L33/30 ,  H01S5/0281 ,  H01S5/0282 ,  H01S5/162 ,  H01S5/183 ,  H01S5/405

Abstract: PROBLEM TO BE SOLVED: To realize an optoelectronic semiconductor device suitable for high optical output power. SOLUTION: The optoelectronic semiconductor device 1 consists of semiconductor crystal material containing at least one of gallium and aluminum substance, and the optoelectronic semiconductor device includes at least one optical active region 2 with its surface, on which at least one optical surface 3 is formed, and at least one boundary layer 4 formed in a position facing an optical surface 3 in the optical active region 2 and consisting of one up to ten layers of monomolecular layers, which contains sulfur or selenium. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：实现适用于高光输出功率的光电半导体器件。 光电子半导体器件1由包含镓和铝物质中的至少一种的半导体晶体材料组成，并且光电子半导体器件包括至少一个具有其表面的光学有源区域2，至少一个光学表面3 形成有至少一个边界层4，该边界层4形成在与光学有源区域2中的光学表面3相对的位置中，并且由含有硫或硒的至多10层的单分子层构成。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：WO2005004244A3

公开(公告)日：2005-04-21

申请号：PCT/DE2004001344

申请日：2004-06-25

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  BUTENDEICH RAINER ,  LINDER NORBERT ,  MAYER BERND ,  PIETZONKA INES

Inventor： BUTENDEICH RAINER ,  LINDER NORBERT ,  MAYER BERND ,  PIETZONKA INES

IPC: H01L33/02 ,  H01S5/30 ,  H01L33/00

CPC classification number: H01L33/025 ,  H01L33/02 ,  H01S5/3086

Abstract: The invention relates to a radiation-emitting semi-conductor element provided with a layered structure, comprising an n-doped confinement layer (14), a p-doped confinement layer (22), and an active layer (18) emitting photons, said layer being arranged between the n-doped confinement layer (14) and the p-doped confinement layer (22). According to the invention, the n-doped confinement layer (14) is doped with a first n-dopant (or two n-dopants which are different from each other) in order to produce a high active doping and a precise doping profile, and the active layer (18) is doped with exclusively one second n dopant, which is different form the first dopant, in order to improve the layer quality of the active layer (18).

Abstract translation: 在具有层结构，其设置在n掺杂限制层（14）发射辐射的半导体器件，p型掺杂的限制层（22），和n型掺杂的限制层（14）和p掺杂限制层（22）的活性之间， 光子发光层（18），本发明提供了具有第一n型掺杂剂（或两种不同的n型掺杂剂）的n型掺杂的限制层（14）被掺杂，以产生高活性掺杂和尖锐的掺杂分布，和 有源层（18）仅掺杂有与第一掺杂剂不同的第二n型掺杂剂，用于改善有源层（18）的层质量。

公开(公告)号：WO2010051784A2

公开(公告)日：2010-05-14

申请号：PCT/DE2009001214

申请日：2009-08-26

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  MAYER BERND ,  KOLLER ANDREAS ,  PFEIFFER JOACHIM

Inventor： MAYER BERND ,  KOLLER ANDREAS ,  PFEIFFER JOACHIM

IPC: H01S5/183

CPC classification number: H01S5/18333 ,  H01S5/18313

Abstract: The invention relates to a surface-emitting semiconductor laser component having a vertical emission direction, comprising a semiconductor body which has a first resonator mirror (2), a second resonator mirror (4), and an active zone (3) suited to generate radiation. The first resonator mirror (2) comprises alternating stacked first layers (2a) having a first composition and second layers (2b) having a second composition. The first layers (2a) have oxidized regions (8a). Furthermore, at least the first layers (2a) each comprise a doping agent, wherein at least one layer (21a) of the first layers (2a) has a doping agent concentration that differs from the doping agent concentration of the other first layers (2a).

Abstract translation: 具有垂直发射方向的表面发射半导体激光器组件技术领域本发明涉及一种具有垂直发射方向的表面发射半导体激光器组件，其包括具有第一谐振器镜（2），第二谐振器镜（4）和适用于产生辐射的有源区（3） 第一谐振镜（2）具有交替堆叠的第一组合物的第一层（2a）和第二组合物的第二层（2b）。 第一层（2a）具有氧化区域（8a）。 此外，至少第一层（2a）各自包含掺杂剂，其中第一层（2a）中的至少一个层（21a）具有与其他第一层（2a）的掺杂剂浓度不同的掺杂剂浓度。

公开(公告)号：DE102008014093A1

公开(公告)日：2009-07-02

申请号：DE102008014093

申请日：2008-03-13

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： KOENIG HARALD ,  LAUER CHRISTIAN ,  MUELLER MARTIN ,  REUFER MARTIN ,  MAYER BERND

IPC: H01S5/065 ,  H01S5/042

Abstract: An edge emitting semiconductor laser chip includes at least one contact strip, wherein the contact strip has a width B, an active zone, in which electromagnetic radiation is generated during the operation of the semiconductor laser chip, and at least two current barriers, arranged on different sides of the contact strip and extending along the contact strip, wherein the largest distance V between at least one of the current barriers and the contact strip is chosen in such a way that the ratio of the largest distance V to the width B is V/B>1.

公开(公告)号：DE502004007853D1

公开(公告)日：2008-09-25

申请号：DE502004007853

申请日：2004-06-25

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： BUTENDEICH RAINER ,  LINDER NORBERT ,  MAYER BERND ,  PIETZONKA INES

IPC: H01L33/02 ,  H01S5/30

Abstract: The component has n- and p-doped confinement layers (14,22) and n active, photon emitting layer (18) between them. The n-doped confinement layer is doped with a first n-doping material to produce high active doping and/or a sharp doping profile and the active layer is doped with a second different doping material to improve the layer quality of the active layer.

公开(公告)号：DE102006013228A1

公开(公告)日：2007-09-27

申请号：DE102006013228

申请日：2006-03-22

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： SCHMID WOLFGANG ,  MAYER BERND ,  MUELLER MARTIN

IPC: H01S5/30 ,  H01L33/02 ,  H01S5/20

Abstract: The semiconductor body has an epitaxial semiconductor layer sequence with an active zone (1) arranged between wave guide layers (2) suitable for producing electromagnetic radiation and a p-coating layer (4). The layer (4) has two sub areas (5, 6) comprising magnesium and zinc as p-doping materials (8, 9), respectively, whose concentration changes with a distance of the active zone. The areas (5, 6) are free from zinc and magnesium, respectively. The layer (4) has another sub area, which comprises the doping materials.

公开(公告)号：DE10345413A1

公开(公告)日：2005-05-04

申请号：DE10345413

申请日：2003-09-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： LINDER NORBERT ,  BEHRES ALEXANDER ,  MAYER BERND

IPC: H01L21/20 ,  H01L33/00 ,  H01L31/072 ,  H01S5/30

Abstract: Process for preparation of an epitaxial structural element based on a first group III/V compound semiconductor material system (SMS) with a first group V element on a substrate or buffer layer, which includes a material based on a second group III/V element SMS with a second group V element different from the first one, where prior to application of the epitaxial layer sequence, a layer sequence with different first and second group III/V compound SMS is applied.

公开(公告)号：DE102007023878A1

公开(公告)日：2008-11-27

申请号：DE102007023878

申请日：2007-05-23

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： MAYER BERND ,  SCHMID WOLFGANG

IPC: H01S5/34 ,  H01L33/02 ,  H01L33/14 ,  H01L33/30

Abstract: The semiconductor chip has a p-doped region with a coating layer (18) and a contact layer (21). Two intermediate layers (19,20) are provided between the coating layer and the contact layer. A concentration of material component is changed in such a manner within two intermediate layers that the bandgap varies within intermediate layer within a range. An independent claim is also included for a method of manufacturing a semiconductor chip.

公开(公告)号：DE10361659A1

公开(公告)日：2005-07-28

申请号：DE10361659

申请日：2003-12-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： BEHRES ALEXANDER ,  LINDER NORBERT ,  MAYER BERND

IPC: H01L21/20 ,  H01S5/343 ,  H01L31/109 ,  H01L31/18 ,  H01L33/00

Abstract: Process for preparation of an epitaxial structural element based on a first group III/V compound semiconductor material system (SMS) with a first group V element on a substrate or buffer layer, which includes a material based on a second group III/V element SMS with a second group V element different from the first one, where prior to application of the epitaxial layer sequence, a layer sequence with different first and second group III/V compound SMS is applied.

公开(公告)号：DE102008055941A1

公开(公告)日：2010-06-17

申请号：DE102008055941

申请日：2008-11-05

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： MAYER BERND ,  KOLLER ANDREAS ,  PFEIFFER JOACHIM

IPC: H01S5/183

Abstract: Es wird ein oberflächenemittierendes Halbleiterlaser-Bauelement mit einer vertikalen Emissionsrichtung angegeben, das einen Halbleiterkörper umfasst, der einen ersten Resonatorspiegel (2), einen zweiten Resonatorspiegel (4) und eine zur Strahlungserzeugung geeignete aktive Zone (3) aufweist. Der erste Resonatorspiegel (2) weist alternierend gestapelte erste Schichten (2a) einer ersten Zusammensetzung und zweite Schichten (2b) einer zweiten Zusammensetzung auf. Die ersten Schichten (2a) weisen oxidierte Bereiche (8a) auf. Ferner enthalten zumindest die ersten Schichten (2a) jeweils einen Dotierstoff, wobei mindestens eine Schicht (21a) der ersten Schichten (2a) eine von der Dotierstoffkonzentration der anderen ersten Schichten (2a) unterschiedliche Dotierstoffkonzentration aufweist.