公开(公告)号：JP2004235649A

公开(公告)日：2004-08-19

申请号：JP2004021828

申请日：2004-01-29

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： ILLEK STEFAN ,  STAUSS PETER ,  PLOESSL ANDREAS ,  DIEPOLD GUDRUN ,  PIETZONKA INES ,  STEIN WILHELM ,  WIRTH RALPH ,  WEGLEITER WALTER

IPC: H01S5/042 ,  H01L33/00 ,  H01L33/30 ,  H01L33/40

CPC classification number: H01L33/40 ,  H01L33/0079 ,  H01L33/30 ,  Y10S438/933

Abstract: PROBLEM TO BE SOLVED: To make directly formable an electric contact area on an n-conductive AlGaInP based or AlGaInAs based semiconductor layer.
SOLUTION: A method includes: adjusting by epitaxial growth semiconductor layers having the n-conductive AlGaInP based or AlGaInAs based outer layers and an active zone that emits electromagnetic radiation; making an electric contact material having Au and at least one doping substance adhered to the outer layer; and tempering the outer layer. The doping substance used in the step of making the electric contact material adhered to the outer layer contains at least one element selected from the group consisting of Ge, Si, Sn, and Te.
COPYRIGHT: (C)2004,JPO&NCIPI

Abstract translation: 要解决的问题：在基于n导电AlGaInP或AlGaInAs的半导体层上直接形成电接触区域。 解决方案：一种方法包括：通过具有基于n导电AlGaInP或AlGaInAs的外层的外延生长半导体层和发射电磁辐射的有源区进行调整; 制造具有Au的电接触材料和至少一种掺杂物质粘附到外层; 并回火外层。 在使电接触材料附着于外层的步骤中使用的掺杂物质含有选自Ge，Si，Sn和Te中的至少一种元素。 版权所有（C）2004，JPO＆NCIPI

公开(公告)号：JP2005109495A

公开(公告)日：2005-04-21

申请号：JP2004281689

申请日：2004-09-28

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： LINDER NORBERT ,  PIETZONKA INES

IPC: H01L33/02 ,  H01L33/06 ,  H01L33/26 ,  H01L33/28 ,  H01L33/30 ,  H01L33/00

CPC classification number: H01L33/30 ,  H01L33/02 ,  H01L33/06 ,  H01L33/26 ,  H01L33/28

Abstract: PROBLEM TO BE SOLVED: To improve the degree of confinement of charge carrier in a radiation forming semiconductor body of InGaAlP base. SOLUTION: At least one side of confinement layers comprises In x Al y Ga 1-x-y P u N 1-u [0≤x≤1, 0≤y≤1, 0≤x+y≤1 and 0≤u z In x Al y Ga 1-x-y-z P u N 1-u [0≤x≤1, 0≤y≤1, 0 COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提高InGaAlP基体的辐射形成半导体体中的载流子的限制程度。 解决方案：约束层的至少一侧包括：在 ＆lt;＆lt; SB＆gt; [0≤x≤1,0≤y≤1,0≤x+y≤1且0≤u<1]，和/或B SB>在 X 铝ý GA 1-XYZ P û名词 1-U [0≤x≤1,0≤y≤1,0

公开(公告)号：DE112020004395A5

公开(公告)日：2022-06-02

申请号：DE112020004395

申请日：2020-03-26

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： BIEBERSDORF ANDREAS ,  ILLEK STEFAN ,  FEIX FELIX ,  KLEMP CHRISTOPH ,  PIETZONKA INES ,  SUNDGREN PETRUS ,  BERGER CHRISTIAN ,  KANEVCE ANA

IPC: H01L33/04 ,  H01L33/06 ,  H01L33/08 ,  H01L33/30

公开(公告)号：DE502004010654D1

公开(公告)日：2010-03-04

申请号：DE502004010654

申请日：2004-06-25

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： BUTENDEICH RAINER ,  LINDER NORBERT ,  MAYER BERND ,  PIETZONKA INES

IPC: H01L33/00 ,  H01L33/02 ,  H01S5/30

Abstract: The component has n- and p-doped confinement layers (14,22) and n active, photon emitting layer (18) between them. The n-doped confinement layer is doped with a first n-doping material to produce high active doping and/or a sharp doping profile and the active layer is doped with a second different doping material to improve the layer quality of the active layer.

公开(公告)号：WO2006012818A3

公开(公告)日：2006-04-06

申请号：PCT/DE2005001065

申请日：2005-06-15

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  PIETZONKA INES ,  SCHMID WOLFGANG ,  WIRTH RALPH

Inventor： PIETZONKA INES ,  SCHMID WOLFGANG ,  WIRTH RALPH

IPC: H01L33/10 ,  H01L33/46

CPC classification number: H01L33/105 ,  H01L33/465

Abstract: The invention relates to a luminescent diode (1) comprising an active area (7) which emits electromagnetic radiation in the direction of the main radiation (15). The active area (7) in the direction of the main radiation (15) is arranged downstream from a reflection-reducing layer sequence (16). Said reflection-reducing layer sequence contains a DBR mirror which is formed from at least one pair of layers (11, 12), a reflection coating (9) which is arranged downstream from the DBR-mirror (13) in the direction of the main radiation (15) and an intermediate layer (14) which is arranged between the DBR-mirror (13) and the reflection coating (9).

Abstract translation: 在发光二极管（1）与活性区（7）中，在主辐射方向上的电磁辐射（15）被发射，其中，所述有源区（7）具有反射抑制层序列（16）中的主光束方向（15）的下游布置，包含防反射 层序列的至少一对层（11，12）形成的DBR镜（13），在主波束方向的DBR反射镜（13）（15）随后的补偿层（9）和所述DBR反射镜（13）和所述间 配置中间层（14）的化合物层（9）。

公开(公告)号：WO2005004244A3

公开(公告)日：2005-04-21

申请号：PCT/DE2004001344

申请日：2004-06-25

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  BUTENDEICH RAINER ,  LINDER NORBERT ,  MAYER BERND ,  PIETZONKA INES

Inventor： BUTENDEICH RAINER ,  LINDER NORBERT ,  MAYER BERND ,  PIETZONKA INES

IPC: H01L33/02 ,  H01S5/30 ,  H01L33/00

CPC classification number: H01L33/025 ,  H01L33/02 ,  H01S5/3086

Abstract: The invention relates to a radiation-emitting semi-conductor element provided with a layered structure, comprising an n-doped confinement layer (14), a p-doped confinement layer (22), and an active layer (18) emitting photons, said layer being arranged between the n-doped confinement layer (14) and the p-doped confinement layer (22). According to the invention, the n-doped confinement layer (14) is doped with a first n-dopant (or two n-dopants which are different from each other) in order to produce a high active doping and a precise doping profile, and the active layer (18) is doped with exclusively one second n dopant, which is different form the first dopant, in order to improve the layer quality of the active layer (18).

Abstract translation: 在具有层结构，其设置在n掺杂限制层（14）发射辐射的半导体器件，p型掺杂的限制层（22），和n型掺杂的限制层（14）和p掺杂限制层（22）的活性之间， 光子发光层（18），本发明提供了具有第一n型掺杂剂（或两种不同的n型掺杂剂）的n型掺杂的限制层（14）被掺杂，以产生高活性掺杂和尖锐的掺杂分布，和 有源层（18）仅掺杂有与第一掺杂剂不同的第二n型掺杂剂，用于改善有源层（18）的层质量。

公开(公告)号：DE112020000567A5

公开(公告)日：2021-12-02

申请号：DE112020000567

申请日：2020-01-29

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： BAUMHEINRICH THORSTEN ,  BEHRINGER MARTIN ,  BIEBERSDORF ANDREAS ,  BOSS RUTH ,  BRANDL MICHAEL ,  BRICK PETER ,  DROLET JEAN-JAQUES ,  HALBRITTER HUBERT ,  KREINER LAURA ,  LANG ERWIN ,  LEBER ANDREAS ,  MEYER TOBIAS ,  PFEUFFER ALEXANDER ,  PHILIPPENS MARC ,  RICHTER JENS ,  SCHWARZ THOMAS ,  TA PAUL ,  VARGHESE TANSEN ,  WANG XUE ,  WITTMANN SEBASTIAN ,  STOLZ JULIA ,  DIEKMANN KARSTEN ,  ENGL KARL ,  HERRMANN SIEGFRIED ,  HAHN BERTHOLD ,  ILLEK STEFAN ,  JENTZSCH BRUNO ,  PERZLMAIER KORBINIAN ,  PIETZONKA INES ,  RAUSCH ANDREAS ,  REGAU KILIAN ,  RUEGHEIMER TILMAN ,  SCHWALENBERG SIMON ,  SOELL CHRISTOPHER ,  STAUSS PETER ,  SUNDGREN PETRUS ,  VU HOA ,  WIESMANN CHRISTOPHER ,  BOGNER GEORG ,  HÖRNER PATRICK ,  KLEMP CHRISTOPH ,  MÜLLER JENS ,  NEVELING KERSTIN ,  PARK JONG ,  RAFAEL CHRISTINE ,  SINGER FRANK ,  CHAND KANISHK ,  FEIX FELIX ,  MÜLLER CHRISTIAN ,  RUMMEL EVA-MARIA ,  HEITZER NICOLE ,  ASSMANN MARIE ,  BERGER CHRISTIAN ,  KANEVCE ANA

IPC: H01L33/62 ,  G09F9/33 ,  H01L25/075 ,  H01L33/60

公开(公告)号：DE102012107795A1

公开(公告)日：2014-02-27

申请号：DE102012107795

申请日：2012-08-23

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： TAANGRING IVAR ,  EBBECKE JENS ,  PIETZONKA INES

IPC: H01L33/30

Abstract: Es wird ein optoelektronischer Halbleiterkörper (1) angegeben, der eine Halbleiterschichtenfolge (2) mit einem zur Erzeugung von Strahlung vorgesehenen aktiven Bereich (20), einem ersten Barrierebereich (21) und einem zweiten Barrierebereich (22) aufweist. Der aktive Bereich (20) ist zwischen dem ersten Barrierebereich (21) und dem zweiten Barrierebereich (22) angeordnet. In dem ersten Barrierebereich (21) ist zumindest eine Ladungsträgerbarriereschicht (3) angeordnet, die zugverspannt ist. Weiterhin wird ein Halbleiterchip (10) mit einem solchen Halbleiterkörper angegeben.

公开(公告)号：DE102004040968A1

公开(公告)日：2006-03-23

申请号：DE102004040968

申请日：2004-08-24

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： PIETZONKA INES ,  WIRTH RALPH ,  SCHMID WOLFGANG

IPC: H01L33/10 ,  H01L33/46

Abstract: A luminescence diode ( 1 ) having an active zone ( 7 ) which emits electromagnetic radiation in a main radiating direction ( 15 ). A reflection-reducing layer sequence ( 16 ) is arranged downstream of the active zone ( 7 ) in the main radiating direction ( 15 ). The reflection-reducing layer sequence includes a DBR mirror ( 13 ), which is formed by at least one layer pair ( 11, 12 ), an antireflective layer ( 9 ) downstream of the DBR mirror ( 13 ) in the main radiating direction ( 15 ) and an intermediate layer ( 14 ) arranged between the DBR mirror ( 13 ) and the antireflective layer ( 9 ).

公开(公告)号：DE10355962A1

公开(公告)日：2005-04-28

申请号：DE10355962

申请日：2003-12-01

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： LINDER NORBERT ,  PIETZONKA INES

IPC: H01L33/02 ,  H01L33/26 ,  H01L33/30 ,  H01L33/00