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公开(公告)号：KR20180072874A
公开(公告)日：2018-06-29
申请号：KR20187017728
申请日：2010-07-19
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： WEIDNER KARL , WIRTH RALPH , KALTENBACHER AXEL , WEGLEITER WALTER , BARCHMANN BERND , WUTZ OLIVER , MARFELD JAN
IPC: H01L31/0232 , H01L33/48 , H01L33/54 , H01L33/60 , H01L33/62
CPC classification number: H01L33/0079 , H01L23/3107 , H01L23/3185 , H01L25/042 , H01L25/0753 , H01L31/02005 , H01L31/0203 , H01L31/0232 , H01L31/02322 , H01L31/02327 , H01L31/1892 , H01L33/483 , H01L33/486 , H01L33/502 , H01L33/54 , H01L33/56 , H01L33/60 , H01L33/62 , H01L2924/0002 , H01L2933/0033 , H01L2933/005 , H01L2933/0066 , H01L2924/00
Abstract: 본발명은광전자반도체소자를제조하기위한방법에관한것이며, 상기방법은하기의단계들을포함한다: 캐리어(1)를제공하는단계, 적어도하나의광전자반도체칩(2)을상기캐리어(1)의상부면(1a)에배치하는단계, 상기적어도하나의광전자반도체칩(2)을성형바디(3)에의하여변형하는단계 - 상기성형바디(3)는상기적어도하나의광전자반도체칩(2)의모든측면들(2c)을덮고, 상기캐리어(1)로부터떨어져서마주하는표면은상기적어도하나의반도체칩(2)의상부면(2a)에서또는상기캐리어쪽을향하는캐리어의표면은상기적어도하나의반도체칩(2)의하부면(2b)에서성형바디(3)를갖지않거나또는노출되어있음 -, 상기캐리어(1)를제거하는단계.
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公开(公告)号：JP2005322922A
公开(公告)日：2005-11-17
申请号：JP2005134674
申请日：2005-05-02
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： WINDISCH REINER , WIRTH RALPH , WEGLEITER WALTER
CPC classification number: H01L33/20 , H01L33/387
Abstract: PROBLEM TO BE SOLVED: To attain improved beam emission efficiency, i.e. beam strength per unit electric power employed, of a semiconductor chip. SOLUTION: A trench defines, on the reverse side of a thin-film layer, only a single partial region which substantially does not have overlap with a front-surface contact structure, wherein on the reverse side, an electrical reverse-side contact is formed exclusively in the partial region and the trench has inner walls, slanted with respect to the principal surface of the thin-film layer serving to deflect an electromagnetic beam. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract translation: 要解决的问题：为了获得提高半导体芯片的光束发射效率，即使用的每单位电功率的光束强度。 解决方案：沟槽在薄膜层的相反侧限定仅基本上不与前表面接触结构重叠的单个部分区域，其中在反面上具有电反向侧 接触仅形成在部分区域中，并且沟槽具有相对于用于偏转电磁束的薄膜层的主表面倾斜的内壁。 版权所有（C）2006，JPO＆NCIPI
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3.发明专利Method of manufacturing module provided with electric contact area and module having semiconductor layers and active zone 审中-公开具有电接触区域的模块的制造方法和具有半导体层和主动区域的模块
公开(公告)号：JP2004235649A
公开(公告)日：2004-08-19
申请号：JP2004021828
申请日：2004-01-29
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： ILLEK STEFAN , STAUSS PETER , PLOESSL ANDREAS , DIEPOLD GUDRUN , PIETZONKA INES , STEIN WILHELM , WIRTH RALPH , WEGLEITER WALTER
CPC classification number: H01L33/40 , H01L33/0079 , H01L33/30 , Y10S438/933
Abstract: PROBLEM TO BE SOLVED: To make directly formable an electric contact area on an n-conductive AlGaInP based or AlGaInAs based semiconductor layer.
SOLUTION: A method includes: adjusting by epitaxial growth semiconductor layers having the n-conductive AlGaInP based or AlGaInAs based outer layers and an active zone that emits electromagnetic radiation; making an electric contact material having Au and at least one doping substance adhered to the outer layer; and tempering the outer layer. The doping substance used in the step of making the electric contact material adhered to the outer layer contains at least one element selected from the group consisting of Ge, Si, Sn, and Te.
COPYRIGHT: (C)2004,JPO&NCIPIAbstract translation: 要解决的问题：在基于n导电AlGaInP或AlGaInAs的半导体层上直接形成电接触区域。 解决方案：一种方法包括：通过具有基于n导电AlGaInP或AlGaInAs的外层的外延生长半导体层和发射电磁辐射的有源区进行调整; 制造具有Au的电接触材料和至少一种掺杂物质粘附到外层; 并回火外层。 在使电接触材料附着于外层的步骤中使用的掺杂物质含有选自Ge，Si，Sn和Te中的至少一种元素。 版权所有（C）2004，JPO＆NCIPI
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公开(公告)号：JP2012099866A
公开(公告)日：2012-05-24
申请号：JP2012034226
申请日：2012-02-20
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： WINDISCH REINER , WIRTH RALPH , WEGLEITER WALTER
CPC classification number: H01L33/20 , H01L33/387
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor chip capable of obtaining improved beam emission efficiency, that is, improved beam strength per employed electric power output unit.SOLUTION: A trench defines, on a reverse side of a thin-film layer, only a single partial region. The partial region substantially does not overlap with front-surface contact structure. On the reverse side, an electrical reverse-side contact is formed only in the partial region and the trench has inner walls, slanted with respect to a principal elongation surface of the thin-film layer for deflecting an electromagnetic beam.
Abstract translation: 要解决的问题：提供一种能够获得改善的光束发射效率的半导体芯片，即，每个所采用的电力输出单元的光束强度提高。 解决方案：沟槽在薄膜层的相反侧限定仅一个部分区域。 部分区域基本上不与前表面接触结构重叠。 在相反的一侧，电反向侧接触只形成在部分区域中，并且沟槽具有内壁，相对于薄膜层的主延长表面倾斜以偏转电磁束。 版权所有（C）2012，JPO＆INPIT
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5.发明专利
公开(公告)号：JP2007189242A
公开(公告)日：2007-07-26
申请号：JP2007061973
申请日：2007-03-12
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： ILLEK STEFAN , PLOESSL ANDREAS , STREUBEL KLAUS , WEGLEITER WALTER , WIRTH RALPH
CPC classification number: H01L33/20 , H01L33/0079 , H01L33/08 , H01L33/10 , H01L33/30 , H01L33/405 , H01L2924/0002 , H01L2924/00
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor chip with improved optical output which can be manufactured by a thin-film technique, and a method for manufacturing it. SOLUTION: A thin-film active layer is processed into a plurality of mesa shapes, and an isolation layer and a metalized layer having reflexivity are formed over the surface of the mesa. Further, the thin-film active layer is mounted on another supporting substrate, and the thin-film active layer is separated from a growth substrate. By reflexing the light generated from an active zone in the thin-film active layer by the isolation layer and the metalized layer formed on the surface of the mesa, luminous efficiency is improved. COPYRIGHT: (C)2007,JPO&INPIT
Abstract translation: 要解决的问题：提供可以通过薄膜技术制造的具有改进的光输出的半导体芯片及其制造方法。 解决方案：将薄膜活性层加工成多个台面形状，并且在台面的表面上形成具有反射性的隔离层和金属化层。 此外，薄膜有源层安装在另一个支撑基板上，并且薄膜有源层与生长基板分离。 通过隔离层和形成在台面表面上的金属化层反射薄膜有源层中的有源区产生的光，发光效率提高。 版权所有（C）2007，JPO＆INPIT
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Patent Agency Ranking
公开(公告)号：JP2003133588A
公开(公告)日：2003-05-09
申请号：JP2002281849
申请日：2002-09-26
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： WEGLEITER WALTER , STREUBEL KLAUS
Abstract: PROBLEM TO BE SOLVED: To impress a current to a beam forming layer in an adequately large area even in a material system in which the application of high-quality active layers on current expanding layers is difficult and complicated. SOLUTION: A back-side contact comprises a plurality of contact locations spaced from one another, and sizes of the contact locations increase as the distance from a central front-side contact increases.
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公开(公告)号：DE102004004780B9
公开(公告)日：2019-04-25
申请号：DE102004004780
申请日：2004-01-30
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： ILLEK STEFAN DR , PLÖSSL ANDREAS DR , STAUSS PETER DR , DIEPOLD GUDRUN , PIETZONKA INES DR , STEIN WILHELM DR , WIRTH RALPH DR , WEGLEITER WALTER
Abstract: Verfahren zum Herstellen eines Bauelementes mit einem elektrischen Kontaktbereich (2) das mindestens folgende Schritte aufweist:- Bereitstellen einer epitaktisch gewachsenen Halbleiterschichtenfolge (8) auf einem Substrat, die eine n-leitende AlGaInP- oder AlGaInAs-basierte Außenschicht (7) und eine elektromagnetische Strahlung emittierende aktive Zone umfasst, wobei die Außenschicht (7) auf einer der Halbleiterschichtenfolge (8) zugewandten Seite des Substrats angeordnet ist und zumindest teilweise Al und Ga in einem Verhältnis a:(1-a), mit 0,4 ≤ a ≤ 1 aufweist;- Aufbringen von elektrischem Kontaktmaterial, welches Au und mindestens einen Dotierstoff aufweist, auf die Außenschicht (7), wobei der Dotierstoff mindestens ein Element aus der Gruppe Ge, Si, Sn und Te enthält;- Tempern der Außenschicht (7).
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公开(公告)号：DE112014000732A5
公开(公告)日：2015-10-15
申请号：DE112014000732
申请日：2014-01-23
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： MOOSBURGER JÜRGEN , STEGMEIER STEFAN , ALTIERI-WEIMAR PAOLA , WEGLEITER WALTER , WEIDNER KARL
IPC: H01L33/62
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公开(公告)号：DE102008016487A1
公开(公告)日：2009-10-01
申请号：DE102008016487
申请日：2008-03-31
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： WEGLEITER WALTER , WIRTH RALPH , BARCHMANN BERND
IPC: H01L31/101 , H01L31/0232 , H01L33/44 , H01L33/56
Abstract: An optoelectronic semiconductor component includes a connection support with a connection side, at least one optoelectronic semiconductor chip mounted on the connection side and electrically connected to the connection support, an adhesion-promoting intermediate film applied to the connection side and covering the latter at least in selected places, and at least one radiation-transmissive cast body which at least partially surrounds the semiconductor chip, the cast body being connected mechanically to the connection support by the intermediate film.
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公开(公告)号：DE102008015551A1
公开(公告)日：2009-10-01
申请号：DE102008015551
申请日：2008-03-25
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： WEGLEITER WALTER , WEIDNER KARL , SORG JOERG , WUTZ OLIVER , STATH NORBERT , BRAUNE BERT
Abstract: The optoelectronic component has a support body (1) and a semiconductor chip (2). The support body has conductive paths (3a,3b) structured for electrically contacting the semiconductor chip. The semiconductor chip has an active layer (4) for generating electromagnetic radiation. The semiconductor chip is partially provided with an electric insulating layer (5). A planar conductive structure (6) is arranged on a partial area of the electric insulating layer. An independent claim is included for a method for manufacturing an optoelectronic component.
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