公开(公告)号：JP2000183354A

公开(公告)日：2000-06-30

申请号：JP35584398

申请日：1998-12-15

Applicant: SONY CORP ,  ST LCD KK

Inventor： HAYASHI HISAO

IPC: H01L21/205 ,  C23C16/24 ,  C23C16/40 ,  H01L21/20 ,  H01L21/265 ,  H01L21/28 ,  H01L21/31 ,  H01L21/316 ,  H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To rationalize a manufacturing process, without deteriorating the characteristics of a bottom gate thin-film transistor. SOLUTION: For manufacturing a thin-film transistor, a gate electrode forming process for forming a gate electrode on an insulating substrate 70 is executed. A continuous film-forming process for supplying the insulating substrate 70, where the gate electrode is formed to the reaction room 12 of a film forming device, forming a gate oxide film with a chemical vapor phase growing method, and forming a semiconductor thin film by overlapping it on the gate oxide in the same reaction room 12 is executed. Then, an implanting process for selectively implanting impurities to the semiconductor thin film and forming a source area and a drain region is executed. In the continuous film-forming process, first reaction gas containing an oxygen element is introduced to the reaction room, the gate oxide film is stacked by chemical vapor phase growing, the reaction room 12 is vacuum-sucked, first reaction gas is exhausted, second reaction gas which does not contain the oxygen element is made to flow into the reaction room 12, the remainder of first reaction gas is diluted, and the semiconductor thin film is stacked with chemical vapor phase growing by using second reaction gas.

公开(公告)号：JP2000182956A

公开(公告)日：2000-06-30

申请号：JP35584298

申请日：1998-12-15

Applicant: SONY CORP ,  ST LCD KK

Inventor： KOJIMA AKIRA ,  HAYASHI HISAO

IPC: H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a laser crystallization device for a semiconductor thin film which controls crystal orientation. SOLUTION: Related to a laser crystallization device, a semiconductor thin film 4 formed on a substrate 0 is irradiated with laser beam 50 while applied with a magnetic field 25, so that the semiconductor thin film 4 is melted once and crystallized in a cooling process. The laser crystallization device comprises a stage 31 on which the substrate 0 to be processed is placed, a vessel 30 where the stage 31 is housed, a laser light source 51 for generating the laser beam 50, an optical system for guiding the laser beam 50 to the substrate 0 placed on the stage 31, and a magnetic field generating device which applied the unidirectional magnetic field 25 to the entire vessel 30 where the stage 31 and at least a part of the optical system are housed. Here, the semiconductor thin film 4 is irradiated with the laser light 50 for melting once, and the crystal orientation of crystal particles contained in the semiconductor thin film 4 is aligned under the action of unidirectional magnetic field in a cooling process. A unidirectional electric field may be acted instead of magnetic field.

公开(公告)号：JP2000315652A

公开(公告)日：2000-11-14

申请号：JP12351699

申请日：1999-04-30

Applicant: SONY CORP ,  ST LCD KK

Inventor： MINEGISHI MASAHIRO ,  HAYASHI HISAO ,  TAKATOKU MASATO

IPC: H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To uniformize crystallinity in an overlapped part and a non-overalpped part, when irradiation areas of laser light are overlapped and a semiconductor thin film having a large area is crystalized. SOLUTION: In this crystalization method, the surface of a substrate 1 is divided along a dividing line DL into a first divided area D1 and a second divided area D2, while a laser light is shaped and an irradiation region R is adjusted so that the respective divided regions D1 and D2 are partly irradiated. The first divided region D1 is repeatedly irradiated by a laser light, while the irradiation region R is scanned parallel to the dividing line DL, and a semiconductor thin film 2 included in the first divided region D1 is crystallized. Likewise, a semiconductor thin film 2 included in the second divided region D2 is crystallized. In this case, the irradiation region R of the laser light emitted to the first divided area D1 and that emitted to the second divided region D2 are overlapped each other on their end parts. An overlapped part W is adjusted in a manner that its width WX parallel to the dividing DL may be 80% or less of a width VX of a non-overlapped part V. In addition, an intensity EW of laser light energy in the overlapped part is controlled to 95% or less of energy concentration EV in the non-overlapped part V.

公开(公告)号：US3914781A

公开(公告)日：1975-10-21

申请号：US48431174

申请日：1974-06-28

Applicant: SONY CORP

Inventor： MATSUSHITA TAKESHI ,  HORINAGA HIROSHI ,  OHTSU TAKAJI ,  HAYASHI HISAO

IPC: H01L29/10 ,  H01L29/744 ,  H01L29/74 ,  H01L29/06 ,  H01L29/90

CPC classification number: H01L29/1016 ,  H01L29/744

Abstract: A semiconductor PNPN large current switching device constructed such that the PN junction of the cathode N type region and a select portion of the P gating element located directly beneath the cathode contact lead is substantially nonconductive. In a preferred embodiment this is accomplished by highly doping the select portion of the P type gating region with an impurity to lower the electron injection efficiency of the adjacent portion of the cathode N type region. In another embodiment it is accomplished by constructing the select P type portion to have a greater thickness than the remaining portion of the gating P region, and in still another embodiment both of these features are employed.

Abstract translation: 半导体PNPN大电流开关器件被构造成使得阴极N型区域的PN结和位于阴极接触引线正下方的P选通元件的选择部分基本上不导电。 在优选实施例中，这是通过用杂质高度掺杂P型选通区域的选择部分来实现的，以降低阴极N型区域的相邻部分的电子注入效率。 在另一个实施例中，通过将选择P型部分构造成具有比选通P区域的剩余部分更大的厚度来实现，并且在又一实施例中，采用了这两个特征。

公开(公告)号：EP0299087A4

公开(公告)日：1989-06-13

申请号：EP88901309

申请日：1988-01-29

Applicant: SONY CORP

Inventor： HAYASHI HISAO ,  MATSUSHITA TAKESHI

IPC: H01L27/00 ,  H01L21/02 ,  H01L21/336 ,  H01L21/768 ,  H01L21/8234 ,  H01L23/528 ,  H01L27/088 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786 ,  H01L21/88

CPC classification number: H01L21/768 ,  H01L23/5283 ,  H01L2924/0002 ,  Y10S438/928 ,  Y10S438/977 ,  H01L2924/00

公开(公告)号：DE69808846D1

公开(公告)日：2002-11-28

申请号：DE69808846

申请日：1998-06-17

Applicant: SONY CORP

Inventor： SHIMOGAICHI YASUSHI ,  HAYASHI HISAO

IPC: H01L21/20 ,  H01L21/265 ,  H01L21/268 ,  H01L21/336 ,  H01L29/786

Abstract: In production of a thin film transistor, a gate electrode is formed on an insulating substrate. A gate nitride film and a gate oxide film are formed on the gate electrode. A semiconductor thin film is formed on the gate oxide film. The semiconductor thin film is irradiated with laser light for crystallization. The growth of the crystal grains in a first section of the semiconductor thin film lying just above the gate electrode is more significant than that of the crystal grains in a second section of the semiconductor thin film lying in a position other than just above the gate electrode. An impurity is selectively doped into the second section of the semiconductor thin film to form a source region and a drain region, while the first section of the semiconductor thin film is left without modification as a channel-forming region.

公开(公告)号：DE3540628C2

公开(公告)日：1994-09-29

申请号：DE3540628

申请日：1985-11-15

Applicant: SONY CORP

Inventor： HAYASHI HISAO ,  MORITA YASUSHI ,  NODA MITSUNARI

IPC: C23C16/46

Abstract: A method and apparatus for depositing a film on a wafer type substrate by vapor deposition. A planar, plate-like susceptor is positioned in a reaction chamber at an angle which is inclined with respect to the horizontal. The wafer is heated to a deposition temperature by means of a radio frequency induction coil which is positioned in close proximity to the susceptor, on the opposite side thereof. A gas inlet means is provided to introduce a decomposable compound of the film to be deposited. The gas inlet means is preferably angularly adjustable relative to the susceptor and is also rotatable on its own axis. Large diameter wafers can be effectively processed with this system in a compact apparatus.

公开(公告)号：DE3786935D1

公开(公告)日：1993-09-16

申请号：DE3786935

申请日：1987-03-06

Applicant: SONY CORP

Inventor： YAGINO MASANORI ,  HAYASHI HISAO

IPC: B41J2/335 ,  H01L49/02

Abstract: Thermal print head includes: (a) heating resistors (3) formed in a thin polySi layer (3) formed on substrate (1); and (b) a driving circuit formed of super-thin film transistors (3,4,5) each having a thin active layer (3c) formed in polySi layer (3). Pref. the active layers (3c) have a thickness of 20-800 Angstrom; the resistors and the active layers are pref. formed of the same material.

公开(公告)号：CA1315421C

公开(公告)日：1993-03-30

申请号：CA575400

申请日：1988-08-23

Applicant: SONY CORP

Inventor： HAYASHI HISAO ,  NEGISHI MICHIO ,  NOGUCHI TAKASHI ,  OHSHIMA TAKEFUMI ,  HAYASHI YUJI ,  MAEKAWA TOSHIKAZU ,  MATSUSHITA TAKESHI

IPC: H01L29/78 ,  H01L29/786

Abstract: A thin film MOS transistor has a construction which can minimize scattering of electrons and thus maximize electron mobility for allowing higher speed operation of the transistor. Toward this, the MOS transistor has a thin film form semiconductor layer having a thickness in a range less than or equal to 100 nm, between a pair of gate electrodes which oppose to each other across the semiconductor layer.

公开(公告)号：FR2573916B1

公开(公告)日：1991-06-28

申请号：FR8517451

申请日：1985-11-26

Applicant: SONY CORP

Inventor： NOGUCHI TAKASHI ,  HAYASHI HISAO ,  OHSHIMA TAKEFUMI

IPC: H01L21/20 ,  H01L21/265 ,  H01L29/786 ,  H01L29/04 ,  H01L29/68 ,  C30B1/00

Abstract: A method of forming a thin semiconductor film has the steps of: forming a thin semiconductor film on a predetermined substrate; implanting predetermined ions in the thin semiconductor film to convert the thin semiconductor film to a thin amorphous semiconductor film; decreasing a thickness of the thin amorphous semiconductor film to a predetermined thickness; and annealing the thin amorphous semiconductor film to cause solid-phase growth. According to this method, a large thin polycrystalline semiconductor film with a crystal grain size larger than the conventional crystal grain size and a good crystal grain orientation can be uniformly formed at a low temperature. It is, therefore, possible to use such a thin semiconductor film to fabricate a thin film semiconductor device with excellent electrical characteristics.