4.
    发明专利
    未知

    公开(公告)号:ITMI20011231D0

    公开(公告)日:2001-06-12

    申请号:ITMI20011231

    申请日:2001-06-12

    Abstract: Sensing circuitry for reading and verifying the contents of electrically programmable and erasable non-volatile memory cells, comprises a sense amplifier having a first sensing circuit portion connected to a cell to be read and provided with an output terminal for connection to a first input terminal of a comparator, and having a second reference circuit portion connected to a reference current generator and provided with an output terminal for connection to a second input terminal of said comparator, characterized in that said first and said second circuit portions comprise a series of first and second transistors, respectively, being connected between a first voltage reference and a second voltage reference and having respective points of interconnection connected to said output terminals of said first and second circuit portions.

    5.
    发明专利
    未知

    公开(公告)号:ITMI20011231A1

    公开(公告)日:2002-12-12

    申请号:ITMI20011231

    申请日:2001-06-12

    Abstract: Sensing circuitry for reading and verifying the contents of electrically programmable and erasable non-volatile memory cells, comprises a sense amplifier having a first sensing circuit portion connected to a cell to be read and provided with an output terminal for connection to a first input terminal of a comparator, and having a second reference circuit portion connected to a reference current generator and provided with an output terminal for connection to a second input terminal of said comparator, characterized in that said first and said second circuit portions comprise a series of first and second transistors, respectively, being connected between a first voltage reference and a second voltage reference and having respective points of interconnection connected to said output terminals of said first and second circuit portions.

    7.
    发明专利
    未知

    公开(公告)号:DE602004003465D1

    公开(公告)日:2007-01-11

    申请号:DE602004003465

    申请日:2004-02-19

    Abstract: A sensing circuit (120) for sensing currents, including at least one sense amplifier (122), comprising: a measure circuit branch (132i), having a measure node for receiving an input current (Ic) to be sensed, for converting the input current into a corresponding input voltage (V-); at least one comparison circuit branch (132o), having a comparison node for receiving a comparison current (Igs), for converting the comparison current into a corresponding comparison voltage (V+); and at least one voltage comparator (140) for comparing the input and comparison voltages, and means (N3s,135; N3s,135';N3s,135" ) for generating the comparison current based on a reference current (Ir), said means comprising: at least one voltage generator (135;135';135'') for receiving the reference current and for generating a corresponding sense amplifier biasing voltage (Vsab); and means (N3s) for converting the sense amplifier biasing voltage into the comparison current. The at least one voltage generator includes a first circuit branch (232i), having a first node for receiving the reference current, for converting the reference current into a corresponding reference voltage (Vref), a second circuit branch (232o), having a second node for receiving a regulation current (Ii), in current mirror configuration with the first circuit branch for mirroring a current (Img) corresponding to the reference current, the second circuit branch generating by conversion a non-regulated voltage (Vgen) corresponding to the mirrored current and to the regulation current, and voltage regulator means (N3g,240) receiving the reference voltage and the non-regulated voltage for regulating the sense amplifier biasing voltage by controlling the non-regulated voltage through the regulation current.

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