公开(公告)号：FR2844396A1

公开(公告)日：2004-03-12

申请号：FR0302772

申请日：2003-03-06

Applicant: ST MICROELECTRONICS SA ,  FRANCE TELECOM

Inventor： BUSTOS JESSY ,  CORONEL PHILIPPE ,  REGNIER CHRISTOPHE ,  WACQUANT FRANCOIS ,  TAVEL BRICE ,  SKOTNICKI THOMAS

IPC: H01L21/28 ,  H01L21/336 ,  H01L21/762 ,  H01L21/768 ,  H01L21/8238 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78

Abstract: The production of an electronic component consists of: (a) covering the surface (S) of a substrate (100) with a portion (P) delimiting with the substrate a volume (V) filled at least partially with a temporary material; (b) evacuating the temporary material from the volume by a shaft (C) extending between the volume and an access surface; (c) introducing an electrical conducting filling material (7) into the volume from some precursors fed via the shaft. Independent claims are also included for: (1) a field effect transistor with a gate produced by this method; (2) an electronic device incorporating such a transistor.

公开(公告)号：FR2845201A1

公开(公告)日：2004-04-02

申请号：FR0211989

申请日：2002-09-27

Applicant: ST MICROELECTRONICS SA

Inventor： CORONEL PHILIPPE ,  REGNIER CHRISTOPHE ,  WACQUANT FRANCOIS ,  SKOTNICKI THOMAS

IPC: H01L21/336 ,  H01L21/28

Abstract: The formation of a portion of a composite material from the elements of an initial material and a metal at the heart of an electronic circuit, comprises: (a) formation of a cavity (C) incorporating at least one opening (O) towards an access surface and presenting an internal wall having a zone of an initial material; (b) deposition of a metal (6) in the proximity of this zone of initial material; (c) heating of the circuit to form a portion of composite material (26) in the zone of initial material; (d) withdrawing from the cavity, via the opening, at least one portion of the metal not having formed the composite material. Independent claims are also included for: (a) an electronic circuit incorporating a portion of composite material formed by this method and acting as an electrical connection; (b) a MOS transistor incorporating a gate having a portion of composite material formed by this method.

公开(公告)号：FR2845201B1

公开(公告)日：2005-08-05

申请号：FR0211989

申请日：2002-09-27

Applicant: ST MICROELECTRONICS SA

Inventor： CORONEL PHILIPPE ,  REGNIER CHRISTOPHE ,  WACQUANT FRANCOIS ,  SKOTNICKI THOMAS

IPC: H01L21/336 ,  H01L21/28

Abstract: The formation of a portion of a composite material from the elements of an initial material and a metal at the heart of an electronic circuit, comprises: (a) formation of a cavity (C) incorporating at least one opening (O) towards an access surface and presenting an internal wall having a zone of an initial material; (b) deposition of a metal (6) in the proximity of this zone of initial material; (c) heating of the circuit to form a portion of composite material (26) in the zone of initial material; (d) withdrawing from the cavity, via the opening, at least one portion of the metal not having formed the composite material. Independent claims are also included for: (a) an electronic circuit incorporating a portion of composite material formed by this method and acting as an electrical connection; (b) a MOS transistor incorporating a gate having a portion of composite material formed by this method.

公开(公告)号：FR2856843A1

公开(公告)日：2004-12-31

申请号：FR0307690

申请日：2003-06-25

Applicant: ST MICROELECTRONICS SA

Inventor： FROMENT BENOIT ,  WACQUANT FRANCOIS

IPC: H01L21/285 ,  H01L21/56 ,  H01L23/29

Abstract: Protection of a semiconductor material against the formation of a metal silicide comprises the formation, on the material, of a layer of silicon-germanium alloy using the following stages: (a) deposition of the layer of silicon-germanium alloy (10) on the integrated circuit assembly; (b) removal of this layer in the zones needed for the formation of a silicide; (c) deposition of a metal on the structure obtained by the removal; (d) formation of the metal silicide (110) on the defined zones; (e) removal of the metal which has not reacted and of the ternary metal-silicon-germanium alloy possibly formed; (f) removal of the layer of silicon-germanium alloy in order to expose the non silicide component.

公开(公告)号：FR2844396B1

公开(公告)日：2006-02-03

申请号：FR0302772

申请日：2003-03-06

Applicant: ST MICROELECTRONICS SA ,  FRANCE TELECOM

Inventor： BUSTOS JESSY ,  CORONEL PHILIPPE ,  REGNIER CHRISTOPHE ,  WACQUANT FRANCOIS ,  TAVEL BRICE ,  SKOTNICKI THOMAS

IPC: H01L21/336 ,  H01L21/28 ,  H01L21/762 ,  H01L21/768 ,  H01L21/8238 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78

Abstract: The production of an electronic component consists of: (a) covering the surface (S) of a substrate (100) with a portion (P) delimiting with the substrate a volume (V) filled at least partially with a temporary material; (b) evacuating the temporary material from the volume by a shaft (C) extending between the volume and an access surface; (c) introducing an electrical conducting filling material (7) into the volume from some precursors fed via the shaft. Independent claims are also included for: (1) a field effect transistor with a gate produced by this method; (2) an electronic device incorporating such a transistor.

公开(公告)号：FR2856514A1

公开(公告)日：2004-12-24

申请号：FR0307474

申请日：2003-06-20

Applicant: ST MICROELECTRONICS SA

Inventor： REGNIER CHRISTOPHE ,  WACQUANT FRANCOIS

IPC: H01L21/285 ,  H01L21/3205 ,  H01L21/28

Abstract: The selective formation of silicide on a wafer (1) of semiconductor material including some zones exposed to the formation of silicide and some zones exposed to not forming silicide, comprises: (a) formation of a layer of resin over the zones not to form silicide; (b) implantation of ions across the layer of resin; (c) removal of the layer of resin; (d) deposition of a metal layer (30) on the wafer, the metal being able to form a silicide by thermal reaction with silicon; (e) thermal treatment to provoke the formation of silicide with the metal; and (f) removal of the metal that has not reacted during the thermal treatment. An independent claim is also included for a semiconductor device produced by the above process.