公开(公告)号：FR2845201A1

公开(公告)日：2004-04-02

申请号：FR0211989

申请日：2002-09-27

Applicant: ST MICROELECTRONICS SA

Inventor： CORONEL PHILIPPE ,  REGNIER CHRISTOPHE ,  WACQUANT FRANCOIS ,  SKOTNICKI THOMAS

IPC: H01L21/336 ,  H01L21/28

Abstract: The formation of a portion of a composite material from the elements of an initial material and a metal at the heart of an electronic circuit, comprises: (a) formation of a cavity (C) incorporating at least one opening (O) towards an access surface and presenting an internal wall having a zone of an initial material; (b) deposition of a metal (6) in the proximity of this zone of initial material; (c) heating of the circuit to form a portion of composite material (26) in the zone of initial material; (d) withdrawing from the cavity, via the opening, at least one portion of the metal not having formed the composite material. Independent claims are also included for: (a) an electronic circuit incorporating a portion of composite material formed by this method and acting as an electrical connection; (b) a MOS transistor incorporating a gate having a portion of composite material formed by this method.

公开(公告)号：DE602004002986D1

公开(公告)日：2006-12-14

申请号：DE602004002986

申请日：2004-05-12

Applicant: ST MICROELECTRONICS SA

Inventor： DELPECH PHILIPPE ,  REGNIER CHRISTOPHE ,  CREMER SEBASTIEN

IPC: H01L21/02 ,  H01L29/92

公开(公告)号：FR2844396A1

公开(公告)日：2004-03-12

申请号：FR0302772

申请日：2003-03-06

Applicant: ST MICROELECTRONICS SA ,  FRANCE TELECOM

Inventor： BUSTOS JESSY ,  CORONEL PHILIPPE ,  REGNIER CHRISTOPHE ,  WACQUANT FRANCOIS ,  TAVEL BRICE ,  SKOTNICKI THOMAS

IPC: H01L21/28 ,  H01L21/336 ,  H01L21/762 ,  H01L21/768 ,  H01L21/8238 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78

Abstract: The production of an electronic component consists of: (a) covering the surface (S) of a substrate (100) with a portion (P) delimiting with the substrate a volume (V) filled at least partially with a temporary material; (b) evacuating the temporary material from the volume by a shaft (C) extending between the volume and an access surface; (c) introducing an electrical conducting filling material (7) into the volume from some precursors fed via the shaft. Independent claims are also included for: (1) a field effect transistor with a gate produced by this method; (2) an electronic device incorporating such a transistor.

公开(公告)号：FR2984654A1

公开(公告)日：2013-06-21

申请号：FR1161855

申请日：2011-12-16

Applicant: ST MICROELECTRONICS CROLLES 2 ,  ST MICROELECTRONICS SA

Inventor： URARD PASCAL ,  REGNIER CHRISTOPHE ,  GLORIA DANIEL ,  HINSINGER OLIVIER ,  CAVENEL PHILIPPE ,  BALME LIONEL

IPC: H04L12/28 ,  H04W12/06

Abstract: L'invention concerne un module sans fil comprenant : un premier dispositif sensible au mouvement (206A) ; un circuit de communication pour communiquer sans fil avec un autre module sans fil (204) ; et un dispositif de traitement agencé pour comparer au moins un premier vecteur de mouvement reçu du premier dispositif sensible au mouvement avec au moins un deuxième vecteur de mouvement reçu d'un deuxième dispositif sensible au mouvement (206B) de l'autre module sans fil.

公开(公告)号：FR2855323A1

公开(公告)日：2004-11-26

申请号：FR0306031

申请日：2003-05-20

Applicant: ST MICROELECTRONICS SA

Inventor： DELPECH PHILIPPE ,  REGNIER CHRISTOPHE ,  CREMER SEBASTIEN

IPC: H01L21/02 ,  H01L29/92

公开(公告)号：FR2963704A1

公开(公告)日：2012-02-10

申请号：FR1056456

申请日：2010-08-05

Applicant: ST MICROELECTRONICS CROLLES 2 ,  ST MICROELECTRONICS SA

Inventor： REGNIER CHRISTOPHE ,  HINSINGER OLIVIER ,  GLORIA DANIEL ,  URARD PASCAL

IPC: H01L31/048 ,  H01L31/05

Abstract: L'invention concerne un dispositif autonome comprenant une plaquette de silicium (1) dont la face avant comporte une première couche d'un premier type de conductivité (2) et une deuxième couche d'un deuxième type de conductivité (3) formant une cellule photovoltaïque ; des premiers vias (4) traversant la plaquette à partir de la face arrière de la première couche (2) et des seconds vias (5) traversant la plaquette à partir de la face arrière de la deuxième couche (3) ; des niveaux de métallisation (9, 10) sur la face arrière de la plaquette, le niveau externe de ces niveaux de métallisation définissant des plots de contact (14) ; une antenne (13) formée dans l'un des niveaux de métallisation ; et une ou plusieurs puces montées sur lesdits plots ; les niveaux de métallisation étant conformés pour assurer des interconnexions choisies entre les différents éléments du dispositif.

公开(公告)号：FR2845201B1

公开(公告)日：2005-08-05

申请号：FR0211989

申请日：2002-09-27

Applicant: ST MICROELECTRONICS SA

Inventor： CORONEL PHILIPPE ,  REGNIER CHRISTOPHE ,  WACQUANT FRANCOIS ,  SKOTNICKI THOMAS

IPC: H01L21/336 ,  H01L21/28

Abstract: The formation of a portion of a composite material from the elements of an initial material and a metal at the heart of an electronic circuit, comprises: (a) formation of a cavity (C) incorporating at least one opening (O) towards an access surface and presenting an internal wall having a zone of an initial material; (b) deposition of a metal (6) in the proximity of this zone of initial material; (c) heating of the circuit to form a portion of composite material (26) in the zone of initial material; (d) withdrawing from the cavity, via the opening, at least one portion of the metal not having formed the composite material. Independent claims are also included for: (a) an electronic circuit incorporating a portion of composite material formed by this method and acting as an electrical connection; (b) a MOS transistor incorporating a gate having a portion of composite material formed by this method.

公开(公告)号：FR2844396B1

公开(公告)日：2006-02-03

申请号：FR0302772

申请日：2003-03-06

Applicant: ST MICROELECTRONICS SA ,  FRANCE TELECOM

Inventor： BUSTOS JESSY ,  CORONEL PHILIPPE ,  REGNIER CHRISTOPHE ,  WACQUANT FRANCOIS ,  TAVEL BRICE ,  SKOTNICKI THOMAS

IPC: H01L21/336 ,  H01L21/28 ,  H01L21/762 ,  H01L21/768 ,  H01L21/8238 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78

Abstract: The production of an electronic component consists of: (a) covering the surface (S) of a substrate (100) with a portion (P) delimiting with the substrate a volume (V) filled at least partially with a temporary material; (b) evacuating the temporary material from the volume by a shaft (C) extending between the volume and an access surface; (c) introducing an electrical conducting filling material (7) into the volume from some precursors fed via the shaft. Independent claims are also included for: (1) a field effect transistor with a gate produced by this method; (2) an electronic device incorporating such a transistor.

公开(公告)号：FR2856514A1

公开(公告)日：2004-12-24

申请号：FR0307474

申请日：2003-06-20

Applicant: ST MICROELECTRONICS SA

Inventor： REGNIER CHRISTOPHE ,  WACQUANT FRANCOIS

IPC: H01L21/285 ,  H01L21/3205 ,  H01L21/28

Abstract: The selective formation of silicide on a wafer (1) of semiconductor material including some zones exposed to the formation of silicide and some zones exposed to not forming silicide, comprises: (a) formation of a layer of resin over the zones not to form silicide; (b) implantation of ions across the layer of resin; (c) removal of the layer of resin; (d) deposition of a metal layer (30) on the wafer, the metal being able to form a silicide by thermal reaction with silicon; (e) thermal treatment to provoke the formation of silicide with the metal; and (f) removal of the metal that has not reacted during the thermal treatment. An independent claim is also included for a semiconductor device produced by the above process.