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1.发明公开A non-volatile memory device supporting high-parallelism test at wafer level 有权EinnichtflüchtigerSpeicher mitUnterstützungvon hochparallelem Test auf Waferebene
公开(公告)号：EP1672647A1
公开(公告)日：2006-06-21
申请号：EP04106609.3
申请日：2004-12-15
Applicant: STMicroelectronics S.r.l. , Hynix Semiconductor Inc.
Inventor： Lomazzi, Guido , Renna, Ilaria , Maccarrone, Marco
IPC: G11C29/00
CPC classification number: G11C29/1201 , G11C16/04 , G11C29/006 , G11C29/16 , G11C29/46 , G11C2029/2602
Abstract: A non-volatile memory device (100) is proposed. The non-volatile memory device includes a chip (105) of semiconductor material. The chip includes a memory (202) and control means (204,210,214) for performing a programming operation (314), an erasing operation (312) and a reading operation (316) on the memory in response to corresponding external commands. The chip further includes testing means (118, 120, 220, 225, 230) for performing at least one test process including the repetition of at least one of said operations by the control means, and a single access element (118) for enabling the testing means.
Abstract translation: 提出了一种非易失性存储器件（100）。 非易失性存储器件包括半导体材料的芯片（105）。 芯片包括用于响应于相应的外部命令在存储器上执行编程操作（314），擦除操作（312）和读取操作（316）的存储器（202）和控制装置（204,210,214）。 所述芯片还包括用于执行至少一个测试过程的测试装置（118,120,220,225,230），所述测试装置包括由所述控制装置重复所述操作中的至少一个操作;以及单个访问元件（118） 测试手段。
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2.发明授权A non-volatile memory device supporting high-parallelism test at wafer level 有权在晶片级与支持的非易失性存储器从hochparallelem测试
公开(公告)号：EP1672647B1
公开(公告)日：2011-04-27
申请号：EP04106609.3
申请日：2004-12-15
Applicant: STMicroelectronics Srl , Hynix Semiconductor Inc.
Inventor： Lomazzi, Guido , Renna, Ilaria , Maccarrone, Marco
IPC: G11C29/00
CPC classification number: G11C29/1201 , G11C16/04 , G11C29/006 , G11C29/16 , G11C29/46 , G11C2029/2602
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3.发明授权Method and circuit for generating an ATD signal to regulate the access to a non-volatile memory 失效方法和电路，用于产生一个地址转换信号ATD以调节访问非易失性存储器
公开(公告)号：EP0915477B1
公开(公告)日：2004-03-17
申请号：EP97830576.1
申请日：1997-11-05
Applicant: STMicroelectronics S.r.l.
Inventor： Campardo, Giovanni , Micheloni, Rino , Maccarrone, Marco , Zammattio, Matteo
IPC: G11C8/00
CPC classification number: G11C8/18
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公开(公告)号：EP0668591B1
公开(公告)日：1999-10-20
申请号：EP94830074.4
申请日：1994-02-18
Applicant: STMicroelectronics S.r.l.
Inventor： Pascucci, Luigi , Padoan, Silvia , Golla, Carla Maria , Maccarrone, Marco , Olivo, Marco
CPC classification number: G11C7/02 , G11C7/1006 , G11C7/22 , G11C16/32
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公开(公告)号：EP0805556B1
公开(公告)日：2005-03-23
申请号：EP96830247.1
申请日：1996-04-30
Applicant: STMicroelectronics S.r.l.
Inventor： Maccarrone, Marco , Ghezzi, Stefano , Branchetti, Maurizio
IPC: H03K17/22
CPC classification number: H03K17/223
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Patent Agency Ranking
公开(公告)号：EP0805456B1
公开(公告)日：2004-02-11
申请号：EP96830242.2
申请日：1996-04-30
Applicant: STMicroelectronics S.r.l.
Inventor： Maccarrone, Marco , Mulatti, Jacopo , Golla, Carla Maria
CPC classification number: G11C16/30
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7.发明授权Read method and circuit for nonvolatile memory cells with an equalizing structure 失效阅读非易失性存储单元与均衡器的方法和电路
公开(公告)号：EP0814483B1
公开(公告)日：2003-08-27
申请号：EP96830347.9
申请日：1996-06-18
Applicant: STMicroelectronics S.r.l.
Inventor： Campardo, Giovanni , Micheloni, Rino , Maccarrone, Marco
IPC: G11C16/06
CPC classification number: G11C16/28
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公开(公告)号：EP0665485B1
公开(公告)日：1998-10-07
申请号：EP94830022.3
申请日：1994-01-21
Applicant: STMicroelectronics S.r.l.
Inventor： Maccarrone, Marco , Olivo, Marco , Golla, Carla Maria
IPC: G05F3/26
CPC classification number: G05F3/262
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9.发明授权
公开(公告)号：EP0661636B1
公开(公告)日：1998-09-23
申请号：EP93830528.1
申请日：1993-12-29
Applicant: STMicroelectronics S.r.l.
Inventor： Pascucci, Luigi , Padoan, Silvia , Maccarrone, Marco
IPC: G06F11/20
CPC classification number: G11C29/70
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公开(公告)号：EP0666571B1
公开(公告)日：2000-05-31
申请号：EP94830030.6
申请日：1994-01-28
Applicant: STMicroelectronics S.r.l.
Inventor： Pascucci, Luigi , Maccarrone, Marco , Padoan, Silvia
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