Patent search ap:("英飞凌科技股份有限公司") AND inv:"T.西姆贝克" Page 1

1.

发明公开
具有被结合到金属箔的半导体管芯的半导体模块有权

公开(公告)号：CN104835746A

公开(公告)日：2015-08-12

申请号：CN201510071017.0

申请日：2015-02-10

Applicant: 英飞凌科技股份有限公司

Inventor： A.海因里希 , P.帕尔姆 , T.西姆贝克 , H.托维斯滕

IPC: H01L21/56 , H01L21/60 , H01L23/498 , H01L23/31

CPC classification number: H01L24/83 , H01L21/4832 , H01L21/561 , H01L21/568 , H01L21/78 , H01L23/49513 , H01L23/49541 , H01L23/49562 , H01L23/562 , H01L24/05 , H01L24/19 , H01L24/20 , H01L24/24 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/82 , H01L24/92 , H01L24/97 , H01L2224/04026 , H01L2224/04105 , H01L2224/05082 , H01L2224/05083 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05639 , H01L2224/06181 , H01L2224/24246 , H01L2224/27831 , H01L2224/291 , H01L2224/29109 , H01L2224/29111 , H01L2224/29147 , H01L2224/2918 , H01L2224/2926 , H01L2224/29393 , H01L2224/32245 , H01L2224/73267 , H01L2224/82031 , H01L2224/82039 , H01L2224/83005 , H01L2224/83192 , H01L2224/83203 , H01L2224/83447 , H01L2224/83455 , H01L2224/83801 , H01L2224/8382 , H01L2224/83825 , H01L2224/8384 , H01L2224/8385 , H01L2224/83931 , H01L2224/92244 , H01L2224/97 , H01L2924/01013 , H01L2924/12042 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/2064 , H01L2924/20641 , H01L2924/20642 , H01L2924/20644 , H01L2924/3511 , H01L2924/00 , H01L2224/82 , H01L2224/83 , H01L2224/19 , H01L2924/014 , H01L2924/00014 , H01L2924/01079 , H01L2924/01029 , H01L2924/0105 , H01L2924/01047 , H01L2924/01006 , H01L2924/01023

Abstract: 具有被结合到金属箔的半导体管芯的半导体模块。一种制造半导体模块的方法包括提供包括被附着于金属层的金属箔的金属复合材料衬底，该金属箔比金属层更薄且包括与之不同的材料，在将金属箔结构化之前将多个半导体管芯的第一表面附着于金属箔，并将被附着于金属箔的半导体管芯装入电绝缘材料中。在用电绝缘材料包住半导体管芯之后将金属层和金属箔结构化，使得电绝缘材料的表面区没有金属箔和金属层。沿着没有金属箔和金属层的表面区划分电绝缘材料以形成单个模块。

2.

发明授权
具有被结合到金属箔的半导体管芯的半导体模块有权

公开(公告)号：CN104835746B

公开(公告)日：2017-12-15

申请号：CN201510071017.0

申请日：2015-02-10

Applicant: 英飞凌科技股份有限公司

Inventor： A.海因里希 , P.帕尔姆 , T.西姆贝克 , H.托维斯滕

IPC: H01L21/56 , H01L21/60 , H01L23/498 , H01L23/31

CPC classification number: H01L24/83 , H01L21/4832 , H01L21/561 , H01L21/568 , H01L21/78 , H01L23/49513 , H01L23/49541 , H01L23/49562 , H01L23/562 , H01L24/05 , H01L24/19 , H01L24/20 , H01L24/24 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/82 , H01L24/92 , H01L24/97 , H01L2224/04026 , H01L2224/04105 , H01L2224/05082 , H01L2224/05083 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05639 , H01L2224/06181 , H01L2224/24246 , H01L2224/27831 , H01L2224/291 , H01L2224/29109 , H01L2224/29111 , H01L2224/29147 , H01L2224/2918 , H01L2224/2926 , H01L2224/29393 , H01L2224/32245 , H01L2224/73267 , H01L2224/82031 , H01L2224/82039 , H01L2224/83005 , H01L2224/83192 , H01L2224/83203 , H01L2224/83447 , H01L2224/83455 , H01L2224/83801 , H01L2224/8382 , H01L2224/83825 , H01L2224/8384 , H01L2224/8385 , H01L2224/83931 , H01L2224/92244 , H01L2224/97 , H01L2924/01013 , H01L2924/12042 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/2064 , H01L2924/20641 , H01L2924/20642 , H01L2924/20644 , H01L2924/3511 , H01L2924/00 , H01L2224/82 , H01L2224/83 , H01L2224/19 , H01L2924/014 , H01L2924/00014 , H01L2924/01079 , H01L2924/01029 , H01L2924/0105 , H01L2924/01047 , H01L2924/01006 , H01L2924/01023

Abstract: 具有被结合到金属箔的半导体管芯的半导体模块。一种制造半导体模块的方法包括提供包括被附着于金属层的金属箔的金属复合材料衬底，该金属箔比金属层更薄且包括与之不同的材料，在将金属箔结构化之前将多个半导体管芯的第一表面附着于金属箔，并将被附着于金属箔的半导体管芯装入电绝缘材料中。在用电绝缘材料包住半导体管芯之后将金属层和金属箔结构化，使得电绝缘材料的表面区没有金属箔和金属层。沿着没有金属箔和金属层的表面区划分电绝缘材料以形成单个模块。

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