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公开(公告)号：CN105336632B
公开(公告)日：2018-07-17
申请号：CN201510473217.9
申请日：2015-08-05
Applicant: 英飞凌科技股份有限公司
IPC: H01L21/60
CPC classification number: H01L24/97 , H01L21/6835 , H01L23/295 , H01L23/3121 , H01L23/3142 , H01L23/49575 , H01L24/83 , H01L25/0655 , H01L25/18 , H01L25/50 , H01L2221/68354 , H01L2221/68363 , H01L2221/68381 , H01L2224/04026 , H01L2224/05611 , H01L2224/05618 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/06181 , H01L2224/291 , H01L2224/2919 , H01L2224/32225 , H01L2224/32245 , H01L2224/371 , H01L2224/40227 , H01L2224/40247 , H01L2224/48227 , H01L2224/48247 , H01L2224/83005 , H01L2224/83191 , H01L2224/83192 , H01L2224/83203 , H01L2224/8381 , H01L2224/8382 , H01L2224/83851 , H01L2224/92246 , H01L2224/92247 , H01L2224/94 , H01L2224/95001 , H01L2224/95091 , H01L2224/97 , H01L2924/10253 , H01L2924/10329 , H01L2924/13055 , H01L2924/14 , H01L2924/1431 , H01L2924/1434 , H01L2224/83 , H01L2224/85 , H01L2224/84 , H01L2224/27 , H01L2924/014 , H01L2224/03 , H01L2924/00
Abstract: 本发明涉及用于将芯片连接到载体的分批工艺。公开用于将芯片连接到芯片载体的方法。在一些实施例中用于将多个芯片连接到芯片载体的方法包含：将第一芯片放置在转移载体上，将第二芯片放置在转移载体上，将带有第一和第二芯片的转移载体放置在芯片载体上，并且在第一芯片和芯片载体与在第二芯片和芯片载体之间形成连接。
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公开(公告)号：CN102637610B
公开(公告)日：2014-12-10
申请号：CN201210029734.3
申请日：2012-02-10
Applicant: 英飞凌科技股份有限公司
CPC classification number: H01L24/81 , H01L23/3107 , H01L23/49513 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/93 , H01L2224/0345 , H01L2224/03452 , H01L2224/04026 , H01L2224/04042 , H01L2224/0508 , H01L2224/05082 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171 , H01L2224/05184 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05669 , H01L2224/05671 , H01L2224/05684 , H01L2224/06181 , H01L2224/27426 , H01L2224/2745 , H01L2224/29018 , H01L2224/29019 , H01L2224/29109 , H01L2224/29111 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83191 , H01L2224/83203 , H01L2224/83345 , H01L2224/8381 , H01L2224/83898 , H01L2224/83906 , H01L2224/93 , H01L2924/00014 , H01L2924/01029 , H01L2924/01322 , H01L2924/01327 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/1461 , H01L2924/15787 , H01L2924/181 , H01L2924/351 , H01L2924/00012 , H01L2924/3512 , H01L2924/00 , H01L2924/01023 , H01L2924/0105 , H01L2924/01049 , H01L2224/27 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
Abstract: 本发明涉及用于在载体上安装半导体芯片的方法。一种方法包括提供具有第一主表面和沉积在第一主表面上的焊料层的半导体芯片，其中所述焊料层具有至少1μm的粗糙度。将半导体芯片放置在载体上，其中半导体芯片的第一主表面面向所述载体。以第一主表面的每mm2的表面积至少1牛顿的压力将半导体芯片按压在所述载体上，并且对焊料施加热量。
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Patent Agency Ranking
公开(公告)号：CN104835746A
公开(公告)日：2015-08-12
申请号：CN201510071017.0
申请日：2015-02-10
Applicant: 英飞凌科技股份有限公司
IPC: H01L21/56 , H01L21/60 , H01L23/498 , H01L23/31
CPC classification number: H01L24/83 , H01L21/4832 , H01L21/561 , H01L21/568 , H01L21/78 , H01L23/49513 , H01L23/49541 , H01L23/49562 , H01L23/562 , H01L24/05 , H01L24/19 , H01L24/20 , H01L24/24 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/82 , H01L24/92 , H01L24/97 , H01L2224/04026 , H01L2224/04105 , H01L2224/05082 , H01L2224/05083 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05639 , H01L2224/06181 , H01L2224/24246 , H01L2224/27831 , H01L2224/291 , H01L2224/29109 , H01L2224/29111 , H01L2224/29147 , H01L2224/2918 , H01L2224/2926 , H01L2224/29393 , H01L2224/32245 , H01L2224/73267 , H01L2224/82031 , H01L2224/82039 , H01L2224/83005 , H01L2224/83192 , H01L2224/83203 , H01L2224/83447 , H01L2224/83455 , H01L2224/83801 , H01L2224/8382 , H01L2224/83825 , H01L2224/8384 , H01L2224/8385 , H01L2224/83931 , H01L2224/92244 , H01L2224/97 , H01L2924/01013 , H01L2924/12042 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/2064 , H01L2924/20641 , H01L2924/20642 , H01L2924/20644 , H01L2924/3511 , H01L2924/00 , H01L2224/82 , H01L2224/83 , H01L2224/19 , H01L2924/014 , H01L2924/00014 , H01L2924/01079 , H01L2924/01029 , H01L2924/0105 , H01L2924/01047 , H01L2924/01006 , H01L2924/01023
Abstract: 具有被结合到金属箔的半导体管芯的半导体模块。一种制造半导体模块的方法包括提供包括被附着于金属层的金属箔的金属复合材料衬底，该金属箔比金属层更薄且包括与之不同的材料，在将金属箔结构化之前将多个半导体管芯的第一表面附着于金属箔，并将被附着于金属箔的半导体管芯装入电绝缘材料中。在用电绝缘材料包住半导体管芯之后将金属层和金属箔结构化，使得电绝缘材料的表面区没有金属箔和金属层。沿着没有金属箔和金属层的表面区划分电绝缘材料以形成单个模块。
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公开(公告)号：CN102814596A
公开(公告)日：2012-12-12
申请号：CN201210185967.2
申请日：2012-06-07
Applicant: 英飞凌科技股份有限公司
CPC classification number: H01L24/48 , B23K1/0016 , B23K35/262 , B23K35/282 , B23K35/3013 , C22C13/00 , C22C18/00 , C22C18/04 , C22C30/04 , C22C30/06 , H01L23/488 , H01L23/49513 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/83 , H01L2224/05599 , H01L2224/29111 , H01L2224/29118 , H01L2224/29139 , H01L2224/32245 , H01L2224/45014 , H01L2224/45015 , H01L2224/45099 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/45164 , H01L2224/45169 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2224/83 , H01L2224/85455 , H01L2224/92247 , H01L2924/00 , H01L2924/00011 , H01L2924/00012 , H01L2924/00014 , H01L2924/01012 , H01L2924/01013 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01322 , H01L2924/10253 , H01L2924/15747 , H01L2924/207
Abstract: 焊料合金及布置。提供一种焊料合金，该焊料合金包括锌、铝、镁和镓，其中铝组成合金重量的8％至20％，镁组成合金重量的0.5%至20%，镓组成合金重量的0.5%至20%，合金的其余部分包括锌。
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公开(公告)号：CN104835746B
公开(公告)日：2017-12-15
申请号：CN201510071017.0
申请日：2015-02-10
Applicant: 英飞凌科技股份有限公司
IPC: H01L21/56 , H01L21/60 , H01L23/498 , H01L23/31
CPC classification number: H01L24/83 , H01L21/4832 , H01L21/561 , H01L21/568 , H01L21/78 , H01L23/49513 , H01L23/49541 , H01L23/49562 , H01L23/562 , H01L24/05 , H01L24/19 , H01L24/20 , H01L24/24 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/82 , H01L24/92 , H01L24/97 , H01L2224/04026 , H01L2224/04105 , H01L2224/05082 , H01L2224/05083 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05639 , H01L2224/06181 , H01L2224/24246 , H01L2224/27831 , H01L2224/291 , H01L2224/29109 , H01L2224/29111 , H01L2224/29147 , H01L2224/2918 , H01L2224/2926 , H01L2224/29393 , H01L2224/32245 , H01L2224/73267 , H01L2224/82031 , H01L2224/82039 , H01L2224/83005 , H01L2224/83192 , H01L2224/83203 , H01L2224/83447 , H01L2224/83455 , H01L2224/83801 , H01L2224/8382 , H01L2224/83825 , H01L2224/8384 , H01L2224/8385 , H01L2224/83931 , H01L2224/92244 , H01L2224/97 , H01L2924/01013 , H01L2924/12042 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/2064 , H01L2924/20641 , H01L2924/20642 , H01L2924/20644 , H01L2924/3511 , H01L2924/00 , H01L2224/82 , H01L2224/83 , H01L2224/19 , H01L2924/014 , H01L2924/00014 , H01L2924/01079 , H01L2924/01029 , H01L2924/0105 , H01L2924/01047 , H01L2924/01006 , H01L2924/01023
Abstract: 具有被结合到金属箔的半导体管芯的半导体模块。一种制造半导体模块的方法包括提供包括被附着于金属层的金属箔的金属复合材料衬底，该金属箔比金属层更薄且包括与之不同的材料，在将金属箔结构化之前将多个半导体管芯的第一表面附着于金属箔，并将被附着于金属箔的半导体管芯装入电绝缘材料中。在用电绝缘材料包住半导体管芯之后将金属层和金属箔结构化，使得电绝缘材料的表面区没有金属箔和金属层。沿着没有金属箔和金属层的表面区划分电绝缘材料以形成单个模块。
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公开(公告)号：CN105336632A
公开(公告)日：2016-02-17
申请号：CN201510473217.9
申请日：2015-08-05
Applicant: 英飞凌科技股份有限公司
IPC: H01L21/60
CPC classification number: H01L24/97 , H01L21/6835 , H01L23/295 , H01L23/3121 , H01L23/3142 , H01L23/49575 , H01L24/83 , H01L25/0655 , H01L25/18 , H01L25/50 , H01L2221/68354 , H01L2221/68363 , H01L2221/68381 , H01L2224/04026 , H01L2224/05611 , H01L2224/05618 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/06181 , H01L2224/291 , H01L2224/2919 , H01L2224/32225 , H01L2224/32245 , H01L2224/371 , H01L2224/40227 , H01L2224/40247 , H01L2224/48227 , H01L2224/48247 , H01L2224/83005 , H01L2224/83191 , H01L2224/83192 , H01L2224/83203 , H01L2224/8381 , H01L2224/8382 , H01L2224/83851 , H01L2224/92246 , H01L2224/92247 , H01L2224/94 , H01L2224/95001 , H01L2224/95091 , H01L2224/97 , H01L2924/10253 , H01L2924/10329 , H01L2924/13055 , H01L2924/14 , H01L2924/1431 , H01L2924/1434 , H01L2224/83 , H01L2224/85 , H01L2224/84 , H01L2224/27 , H01L2924/014 , H01L2224/03 , H01L2924/00 , H01L24/94
Abstract: 本发明涉及用于将芯片连接到载体的分批工艺。公开用于将芯片连接到芯片载体的方法。在一些实施例中用于将多个芯片连接到芯片载体的方法包含：将第一芯片放置在转移载体上，将第二芯片放置在转移载体上，将带有第一和第二芯片的转移载体放置在芯片载体上，并且在第一芯片和芯片载体与在第二芯片和芯片载体之间形成连接。
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公开(公告)号：CN102637610A
公开(公告)日：2012-08-15
申请号：CN201210029734.3
申请日：2012-02-10
Applicant: 英飞凌科技股份有限公司
CPC classification number: H01L24/81 , H01L23/3107 , H01L23/49513 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/93 , H01L2224/0345 , H01L2224/03452 , H01L2224/04026 , H01L2224/04042 , H01L2224/0508 , H01L2224/05082 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171 , H01L2224/05184 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05669 , H01L2224/05671 , H01L2224/05684 , H01L2224/06181 , H01L2224/27426 , H01L2224/2745 , H01L2224/29018 , H01L2224/29019 , H01L2224/29109 , H01L2224/29111 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83191 , H01L2224/83203 , H01L2224/83345 , H01L2224/8381 , H01L2224/83898 , H01L2224/83906 , H01L2224/93 , H01L2924/00014 , H01L2924/01029 , H01L2924/01322 , H01L2924/01327 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/1461 , H01L2924/15787 , H01L2924/181 , H01L2924/351 , H01L2924/00012 , H01L2924/3512 , H01L2924/00 , H01L2924/01023 , H01L2924/0105 , H01L2924/01049 , H01L2224/27 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
Abstract: 本发明涉及用于在载体上安装半导体芯片的方法。一种方法包括提供具有第一主表面和沉积在第一主表面上的焊料层的半导体芯片，其中所述焊料层具有至少1μm的粗糙度。将半导体芯片放置在载体上，其中半导体芯片的第一主表面面向所述载体。以第一主表面的每mm2的表面积至少1牛顿的压力将半导体芯片按压在所述载体上，并且对焊料施加热量。
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