公开(公告)号：US20240363316A1

公开(公告)日：2024-10-31

申请号：US18766571

申请日：2024-07-08

Applicant: LOT CES CO., LTD. ,  LOT VACUUM CO., LTD.

Inventor： Jin Ho BAE ,  Min Jae KIM ,  Geon Bo SIM ,  Tae Wook YOO

IPC: H01J37/32

CPC classification number: H01J37/32844 ,  H01J37/321 ,  H01J37/32807

Abstract: A plasma reactor for inductively coupled plasma includes: a ferrite core assembly including a ferrite core stacked body including a plurality of ferrite cores stacked and a first passage portion and a second passage portion arranged in parallel, and a ferrite core accommodating structure; a first chamber body including a first base portion configured to provide a first internal space therein, a first A-extension pipe extending from the first base portion, communicating with the first internal space and accommodated in the first passage portion, and a second A-extension pipe extending from the first base portion; and a second chamber body including a second base portion configured to provide a second internal space therein, a first B-extension pipe extending from the second base portion, and a second B-extension pipe extending from the second base portion.

公开(公告)号：US12111110B2

公开(公告)日：2024-10-08

申请号：US17679824

申请日：2022-02-24

Applicant: Applied Materials, Inc.

Inventor： Manoj A. Gajendra

IPC: F28D1/02 ,  F28F9/00 ,  B01D5/00 ,  H01J37/32 ,  H01L21/67

CPC classification number: F28D1/0246 ,  F28F9/002 ,  B01D5/0003 ,  B01D5/0045 ,  F28D2001/0266 ,  F28D2001/0273 ,  H01J37/32844 ,  H01L21/67017

Abstract: A heat exchanger for abating compounds produced in semiconductor processes is presented. When hot effluent flows into the heat exchanger, a coolant can be flowed to walls of a fluid heat exchanging surface within the heat exchanger. The heat exchanging surface can include a plurality of channel regions which creates a multi stage cross flow path for the hot effluent to flow down the heat exchanger. This flow path forces the hot effluent to hit the cold walls of the fluid heat exchanging surface, significantly cooling the effluent and preventing it from flowing directly into the vacuum pumps and causing heat damage. The heat exchanger can be created by sequentially depositing layers of thermally conductive material on surfaces using 3-D printing, creating a much smaller footprint and reducing costs.

公开(公告)号：US12014900B2

公开(公告)日：2024-06-18

申请号：US18045813

申请日：2022-10-11

Applicant: ReCarbon, Inc.

Inventor： Curtis Peter Tom ,  Fei Xie ,  Wei Li ,  Stefan Andrew McClelland

IPC: H01J37/32 ,  B01J19/12 ,  C23C16/511 ,  G01J1/04 ,  G01J1/42 ,  G01J5/00 ,  H05H1/46

CPC classification number: H01J37/32229 ,  B01J19/12 ,  C23C16/511 ,  G01J1/0425 ,  G01J1/0492 ,  G01J1/4228 ,  G01J1/429 ,  G01J5/0018 ,  H01J37/32449 ,  H01J37/32623 ,  H01J37/32844 ,  H01J37/32972 ,  H05H1/46 ,  F01N2240/28 ,  H01J37/32192 ,  H01J37/32513 ,  H01J2237/1502 ,  H05H1/4622

Abstract: The present invention provides a plasma generating system that includes: a waveguide; a plasma cavity coupled to the waveguide and configured to generate a plasma therewithin by use of microwave energy; a hollow cylinder protruding from a wall of the waveguide and having a bottom cap that has an aperture; a detection unit for receiving the light emitted by the plasma through the aperture and configured to measure intensities of the light in an ultraviolet (UV) range and an infrared (IR) range; and a controller for controlling the detection unit.

公开(公告)号：US20240181380A1

公开(公告)日：2024-06-06

申请号：US18442528

申请日：2024-02-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Seok ROH ,  Suji GIM ,  Heesub KIM ,  Hee Ock PARK ,  Jongyong BAE ,  Sung Chul YOON ,  Sunsoo LEE ,  Dong Keun JEON ,  Jinkyoung JOO

IPC: B01D47/06 ,  B08B9/08 ,  H01J37/32

CPC classification number: B01D47/06 ,  H01J37/32844 ,  B08B9/0813

Abstract: A scrubber system may include a scrubber housing including a vertically extended cleaning space, an inflow chamber coupled to a bottom portion of the scrubber housing, and first and second inflow portions, each of which is configured to supply a gas into the inflow chamber. The inflow chamber may include a mixing space, and the mixing space may be connected to the cleaning space. The first inflow portion may include a first connection pipe coupled to the inflow chamber to provide a first connection path and the second inflow portion may include a second connection pipe coupled to the inflow chamber to provide a second connection path. The first and second connection paths may be extended toward the mixing space in opposite directions, respectively, and may be connected to opposite portions of the mixing space, respectively.

公开(公告)号：US11848178B2

公开(公告)日：2023-12-19

申请号：US17085058

申请日：2020-10-30

Applicant: Applied Materials, Inc.

Inventor： Fang Ruan ,  Diwakar Kedlaya

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32844 ,  H01J37/32357 ,  H01J37/32963 ,  H01L21/683

Abstract: Semiconductor processing systems and methods are disclosed. An exemplary semiconductor processing system may include a semiconductor processing chamber containing a solid boron deposit, a remote plasma unit disposed upstream of the semiconductor processing chamber, and an optical absorption sensor disposed downstream of the semiconductor processing chamber. The remote plasma unit may be configured to generate plasma effluents from a fluorine-containing precursor. The optical absorption sensor may be configured to measure within an outflow from the semiconductor processing chamber a level of a boron-containing compound produced via a reaction between at least a portion of the solid boron deposit and the plasma effluents flowed from the remote plasma unit into the semiconductor processing chamber.

公开(公告)号：US20230360924A1

公开(公告)日：2023-11-09

申请号：US17737311

申请日：2022-05-05

Applicant: Applied Materials, Inc.

Inventor： Supriya Ghosh ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Shuchi Sunil Ojha ,  Praket Prakash Jha ,  Rui Cheng

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01J37/32844 ,  H01J37/32522 ,  H01J37/32449 ,  H01L21/02115 ,  H01J2237/332 ,  H01J2237/2001 ,  H01J2237/182 ,  H01J2237/334

Abstract: Exemplary methods of semiconductor processing may include providing a carbon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The substrate may define one or more features along the substrate. The methods may include forming a plasma of the carbon-containing precursor within the processing region. The methods may include depositing a carbon-containing material on the substrate. The carbon-containing material may extend within the one or more features along the substrate. The methods may include forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include treating the carbon-containing material with plasma effluents of the hydrogen-containing precursor. The plasma effluents of the hydrogen-containing precursor may cause a portion of the carbon-containing material to be removed from the substrate.

公开(公告)号：US09831112B2

公开(公告)日：2017-11-28

申请号：US14534246

申请日：2014-11-06

Applicant: Tokyo Electron Limited

Inventor： Shingo Koiwa

IPC: C23C16/00 ,  C23C16/50 ,  C23F1/00 ,  H01L21/306 ,  H01L21/683 ,  H01J37/32 ,  H01L21/67 ,  H01L21/3065

CPC classification number: H01L21/6833 ,  H01J37/32697 ,  H01J37/32706 ,  H01J37/32724 ,  H01J37/32834 ,  H01J37/32844 ,  H01L21/3065 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/6838 ,  Y02C20/30 ,  Y02P70/605

Abstract: A substrate processing apparatus includes an electrostatic chuck that includes a chuck electrode and electrostatically attracts a substrate; a direct voltage source that is connected to the chuck electrode and applies a voltage to the chuck electrode; and an evacuation unit that includes a rotor and discharges, via a heat transfer gas discharge pipe, a heat transfer gas supplied to a back surface of the substrate electrostatically-attracted by the electrostatic chuck. The evacuation unit is connected via a power supply line to the direct voltage source, generates regenerative power, and supplies the regenerative power to the direct voltage source.

公开(公告)号：US20170301524A1

公开(公告)日：2017-10-19

申请号：US15487324

申请日：2017-04-13

Applicant: Applied Materials, Inc.

Inventor： Michael S. COX ,  Brian T. WEST ,  Roger M. JOHNSON ,  Yan ROZENZON ,  Dinkesh SOMANNA ,  Dustin W. HO

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32844 ,  H01J2237/002 ,  H01J2237/18 ,  H01J2237/31701 ,  H01L21/67069 ,  Y02C20/30

Abstract: Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes an exhaust cooling apparatus located downstream of a plasma source. The exhaust cooling apparatus includes at least one cooling plate a device for introducing turbulence to the exhaust flowing within the exhaust cooling apparatus. The device may be a plurality of fins, a cylinder with a curved top portion, or a diffuser with angled blades. The turbulent flow of the exhaust within the exhaust cooling apparatus causes particles to drop out of the exhaust, minimizing particles forming in equipment downstream of the exhaust cooling apparatus.

公开(公告)号：US20170110291A1

公开(公告)日：2017-04-20

申请号：US15204038

申请日：2016-07-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-Hwa KIM ,  Byungbok KANG ,  Chanhoon PARK ,  Jaehyun LEE ,  SungHyup KIM ,  Jaeick HONG

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32082 ,  H01J37/32816 ,  H01J37/32834 ,  H01J37/32844 ,  H01J37/3299 ,  H01J2237/006 ,  Y02C20/30

Abstract: A substrate treatment apparatus may include one or more of a process chamber, a gas supply assembly that may supply one or more gases into the process chamber, a gas exhaust assembly that may exhaust gases from the process chamber, and a gas injector assembly connected to the gas exhaust assembly independently of the process chamber. The gas injector assembly may supply a control gas into the gas exhaust assembly. The apparatus may include a gas injection control device configured to adjustably control the supply of control gas. The gas inject control device may measure an internal pressure of the process chamber and control the supply of control gas based on the internal pressure. The apparatus may include a diffuser that couples the gas injector assembly to the gas exhaust assembly and is configured to diffuse the control gas supplied from the gas injector assembly into the gas exhaust assembly.

公开(公告)号：US20160379808A1

公开(公告)日：2016-12-29

申请号：US14748466

申请日：2015-06-24

Applicant: THE BOEING COMPANY

Inventor： Benjamin Jeffrey Stephenson ,  Richard Allen Miller, II ,  Kieran P. Davis ,  Marcus Anthony Belcher

IPC: H01J37/32 ,  B08B15/02

CPC classification number: H01J37/32834 ,  B08B15/04 ,  H01J37/32844 ,  Y02C20/30

Abstract: A gas containment apparatus for use with an end effector including at least one plasma head includes at least one enclosing structure coupled to the end effector. The enclosing structure is configured to capture a gas produced by the at least one plasma head. The gas containment apparatus also includes a duct coupled to the at least one enclosing structure and configured to channel the gas from within the enclosing structure.

Abstract translation: 一种用于包括至少一个等离子体头部的末端执行器的气体封存装置包括耦合到端部执行器的至少一个封闭结构。 封闭结构构造成捕获由至少一个等离子体头产生的气体。 气体收容装置还包括连接到至少一个封闭结构并被构造成从封闭结构内引导气体的管道。