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公开(公告)号：US11947266B2
公开(公告)日：2024-04-02
申请号：US17297171
申请日：2019-11-14
Applicant: ASML NETHERLANDS B.V.
Inventor： Nicolaas Petrus Marcus Brantjes , Matthijs Cox , Boris Menchtchikov , Cyrus Emil Tabery , Youping Zhang , Yi Zou , Chenxi Lin , Yana Cheng , Simon Philip Spencer Hastings , Maxim Philippe Frederic Genin
CPC classification number: G03F7/70491 , G03F7/70633 , G03F9/7046
Abstract: A method for determining a correction relating to a performance metric of a semiconductor manufacturing process, the method including: obtaining a set of pre-process metrology data; processing the set of pre-process metrology data by decomposing the pre-process metrology data into one or more components which: a) correlate to the performance metric; or b) are at least partially correctable by a control process which is part of the semiconductor manufacturing process; and applying a trained model to the processed set of pre-process metrology data to determine the correction for the semiconductor manufacturing process.
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92.发明授权公开(公告)号：US11947256B2
公开(公告)日：2024-04-02
申请号：US16634910
申请日：2018-06-26
Applicant: ASML NETHERLANDS B.V.
Inventor： Evgenia Kurganova , Adrianus Johannes Maria Giesbers , Maxim Aleksandrovich Nasalevich , Arnoud Willem Notenboom , Mária Péter , Pieter-Jan Van Zwol , David Ferdinand Vles , Willem-Pieter Voorthuijzen
IPC: G03F1/62 , C01B32/186 , G03F7/00
CPC classification number: G03F1/62 , C01B32/186 , G03F7/70958 , G03F7/70983
Abstract: A method of manufacturing a pellicle for a lithographic apparatus, the method including locally heating the pellicle using radiative heating, and depositing coating material simultaneously on both sides of the pellicle, and pellicles manufactured according to this method. Also disclosed is the use of a multilayer graphene pellicle with a double-sided hexagonal boron nitride coating in a lithographic apparatus.
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公开(公告)号：US20240103386A1
公开(公告)日：2024-03-28
申请号：US18376237
申请日：2023-10-03
Applicant: ASML NETHERLANDS B.V , ASML HOLDING N.V
Inventor： Derk Servatius Gertruda BROUNS , Joshua ADAMS , Aage BENDIKSEN , Richard JACOBS , Andrew JUDGE , Veera Venkata Narasimha Narendra Phani KOTTAPALLI , Joseph Harry LYONS , Theodorus Marinus MODDERMAN , Manish RANJAN , Marcus Adrianus VAN DE KERKHOF , Xugang XIONG
CPC classification number: G03F7/7085 , G03F1/62 , G03F1/64 , G03F7/70033 , G03F7/70891 , G03F7/70983
Abstract: An apparatus for determining a condition associated with a pellicle for use in a lithographic apparatus, the apparatus including a sensor, wherein the sensor is configured to measure a property associated with the pellicle, the property being indicative of the pellicle condition.
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公开(公告)号：US11942340B2
公开(公告)日：2024-03-26
申请号：US17811047
申请日：2022-07-06
Applicant: ASML Netherlands B.V.
Inventor： Jeroen Gerard Gosen , Te-Yu Chen , Dennis Herman Caspar Van Banning , Edwin Cornelis Kadijk , Martijn Petrus Christianus Van Heumen , Erheng Wang , Johannes Andreas Henricus Maria Jacobs
CPC classification number: H01L21/67201 , G03F7/70841 , G03F7/70858 , H01L21/67098
Abstract: An improved particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus including an improved load lock unit is disclosed. An improved load lock system may comprise a plurality of supporting structures configured to support a wafer and a conditioning plate including a heat transfer element configured to adjust a temperature of the wafer. The load lock system may further comprise a gas vent configured to provide a gas between the conditioning plate and the wafer and a controller configured to assist with the control of the heat transfer element.
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公开(公告)号：US11942303B2
公开(公告)日：2024-03-26
申请号：US17359365
申请日：2019-12-06
Applicant: ASML Netherlands B.V.
Inventor： Yan Ren , Albertus Victor Gerardus Mangnus
IPC: H01J37/147 , G01N23/2251 , H01J37/09 , H01J37/145 , H01J37/20 , H01J37/28
CPC classification number: H01J37/1478 , G01N23/2251 , H01J37/09 , H01J37/145 , H01J37/1474 , H01J37/20 , H01J37/28 , G01N2223/07 , G01N2223/418 , G01N2223/507 , H01J2237/0455 , H01J2237/04926 , H01J2237/103 , H01J2237/151 , H01J2237/226 , H01J2237/2611
Abstract: Embodiments consistent with the disclosure herein include methods and a multi-beam apparatus configured to emit charged-particle beams for imaging a top and side of a structure of a sample, including: a deflector array including a first deflector and configured to receive a first charged-particle beam and a second charged-particle beam; a blocking plate configured to block one of the first charged-particle beam and the second charged-particle beam; and a controller having circuitry and configured to change the configuration of the apparatus to transition between a first mode and a second mode. In the first mode, the deflector array directs the second charged-particle beam to the top of the structure, and the blocking plate blocks the first charged-particle beam. And in the second mode, the first deflector deflects the first charged-particle beam to the side of the structure, and the blocking plate blocks the second charged-particle beam.
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Patent Agency Ranking
公开(公告)号：US11942302B2
公开(公告)日：2024-03-26
申请号：US17361119
申请日：2019-12-17
Applicant: ASML Netherlands B.V.
Inventor： Arno Jan Bleeker , Pieter Willem Herman De Jager , Maikel Robert Goosen , Erwin Paul Smakman , Albertus Victor Gerardus Mangnus , Yan Ren , Adam Lassise
IPC: H01J37/09 , H01J37/147 , H01J37/244 , H01J37/26 , H01J37/28
CPC classification number: H01J37/1474 , H01J37/244 , H01J37/265 , H01J37/28 , H01J2237/24475 , H01J2237/2448 , H01J2237/2817
Abstract: Apparatuses and methods for charged-particle detection may include a deflector system configured to direct charged-particle pulses, a detector having a detection element configured to detect the charged-particle pulses, and a controller having a circuitry configured to control the deflector system to direct a first and second charged-particle pulses to the detection element; obtain first and second timestamps associated with when the first charged-particle pulse is directed by the deflector system and detected by the detection element, respectively, and third and fourth timestamps associated with when the second charged-particle pulse is directed by the deflector system and detected by the detection element, respectively; and identify a first and second exiting beams based on the first and second timestamps, and the third and fourth timestamps, respectively.
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公开(公告)号：US11940608B2
公开(公告)日：2024-03-26
申请号：US17608038
申请日：2020-04-02
Applicant: ASML NETHERLANDS B.V.
Inventor： Sebastianus Adrianus Goorden
CPC classification number: G02B21/0016 , G01N21/9501 , G02B21/002 , G02B21/0036 , G02B21/02 , G02B21/10 , G03F7/70625 , G03F7/70633 , G03F7/706849 , G03F7/706851 , G01N21/95623
Abstract: A dark field metrology device includes an objective lens arrangement and a zeroth order block to block zeroth order radiation. The objective lens arrangement directs illumination onto a specimen to be measured and collects scattered radiation from the specimen, the scattered radiation including zeroth order radiation and higher order diffracted radiation. The dark field metrology device is operable to perform an illumination scan to scan illumination over at least two different subsets of the maximum range of illumination angles; and simultaneously perform a detection scan which scans the zeroth order block and/or the scattered radiation with respect to each other over a corresponding subset of the maximum range of detection angles during at least part of the illumination scan.
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公开(公告)号：US11940264B2
公开(公告)日：2024-03-26
申请号：US17624276
申请日：2020-06-05
Applicant: ASML NETHERLANDS B.V.
Inventor： Johannes Mathias Theodorus Antonius Adriaens , Carolus Johannes Catharina Schoormans , Luuk Johannes Helena Seelen
CPC classification number: G01B11/005 , G03F7/70775 , G03F7/7085
Abstract: A method for calibrating a mirror of an interferometer system configured to measure a position of an object using two interferometers of the interferometer system that are arranged at opposite sides of the object and configured to measure the position of the object in the same X-direction, wherein two sets of measurements are obtained for different rotational orientations about an axis perpendicular to the X-direction to determine a shape of the mirror. There is also provided a position measuring method in which the obtained shape of the mirror is used to adjust measurements in the X-direction, a lithographic apparatus and a device manufacturing method making use of such a lithographic apparatus.
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公开(公告)号：US20240095437A1
公开(公告)日：2024-03-21
申请号：US18382822
申请日：2023-10-23
Applicant: ASML Netherlands B.V.
Inventor： Quan ZHANG , Yong-Ju Cho , Zhangnan Zhu , Boyang Huang , Been-Der Chen
IPC: G06F30/398 , G03F1/36 , G03F1/70 , G03F7/00
CPC classification number: G06F30/398 , G03F1/36 , G03F1/70 , G03F7/70441 , G03F1/44
Abstract: A method for generating a mask pattern to be employed in a patterning process. The method including obtaining (i) a first feature patch including a first polygon portion of an initial mask pattern, and (ii) a second feature patch including a second polygon portion of the initial mask pattern; adjusting the second polygon portion at a patch boundary between the first feature patch and the second feature patch such that a difference between the first polygon portion and the second polygon portion at the patch boundary is reduced; and combining the first polygon portion and the adjusted second polygon portion at the patch boundary to form the mask pattern.
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100.发明公开公开(公告)号：US20240094641A1
公开(公告)日：2024-03-21
申请号：US18255543
申请日：2021-12-02
Applicant: ASML Holding N.V. , ASML Netherlands B.V.
Inventor： Justin Lloyd KREUZER , Simon Reinald HUISMAN , Sebastianus Adrianus GOORDEN , Filippo ALPEGGIANI
IPC: G03F7/00
CPC classification number: G03F7/70633 , G03F7/706837 , G03F7/706849
Abstract: The system includes a radiation source, a diffractive element, an optical system, a detector, and a processor. The radiation source generates radiation. The diffractive element diffracts the radiation to generate a first beam and a second beam. The first beam includes a first non-zero diffraction order and the second beam includes a second non-zero diffraction order that is different from the first non-zero diffraction order. The optical system receives a first scattered beam and a second scattered radiation beam from a target structure and directs the first scattered beam and the second scattered beam towards a detector. The detector generates a detection signal. The processor analyzes the detection signal to determine a target structure property based on at least the detection signal. The first beam is attenuated with respect to the second beam or the first scattered beam is purposely attenuated with respect to the second scattered beam.
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