公开(公告)号：US20190203351A1

公开(公告)日：2019-07-04

申请号：US16234968

申请日：2018-12-28

Applicant: FLOSFIA INC.

Inventor： Shigetaka KATORI ,  Takashi SHINOHE ,  Takuto IGAWA

IPC: C23C16/448

CPC classification number: C23C16/4486

Abstract: In a first aspect of a present inventive subject matter, a method of surface treatment includes preparing a raw material solution containing a chemical substance and a solvent with a boiling point; homogenizing the raw material solution containing the chemical substance and the solvent; generating atomized droplets by atomizing the raw material solution containing the chemical substance and the solvent; supplying carrier gas to the atomized droplets to carry the atomized droplets onto a base; and causing thermal reaction of the atomized droplets adjacent to the base at a temperature that is the boiling point of the solvent or at a higher temperature than the boiling point of the solvent contained in the raw material solution to apply surface treatment to the base.

公开(公告)号：US20190169447A1

公开(公告)日：2019-06-06

申请号：US16206067

申请日：2018-11-30

Applicant: FLOSFIA INC.

Inventor： Shigetaka KATORI ,  Takashi SHINOHE ,  Takuto IGAWA

IPC: C09D7/20 ,  C09D1/00 ,  C09D7/40 ,  C09D5/24 ,  H01L51/00 ,  C23C16/448 ,  B05D1/00

Abstract: In a first aspect of a present inventive subject matter, a solvent contains a nonpolar solvent containing an aromatic compound and a polar solvent that is an aprotic polar solvent. The ratio of the nonpolar solvent to the polar solvent by volume ratio is 5:1 to 1:1.

公开(公告)号：US20190057865A1

公开(公告)日：2019-02-21

申请号：US16106753

申请日：2018-08-21

Applicant: FLOSFIA INC. ,  NATIONAL INSTITUTE FOR MATERIALS SCIENCE ,  KYOTO UNIVERSITY ,  SAGA UNIVERSITY

Inventor： Yuichi OSHIMA ,  Shizuo FUJITA ,  Kentaro KANEKO ,  Makoto KASU ,  Katsuaki KAWARA ,  Takashi SHINOHE ,  Tokiyoshi MATSUDA ,  Toshimi HITORA

IPC: H01L21/02 ,  H01L29/24 ,  H01L29/04

CPC classification number: H01L21/02565 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02483 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02636 ,  H01L29/04 ,  H01L29/24 ,  H01L29/872

Abstract: According to an aspect of a present inventive subject matter, a crystalline film includes a crystalline metal oxide as a major component, the crystalline film includes a corundum structure, a surface area that is 9 μm2 or more, and a dislocation density that is less than 5×106cm−2.

公开(公告)号：US20190055646A1

公开(公告)日：2019-02-21

申请号：US16106554

申请日：2018-08-21

Applicant: FLOSFIA INC. ,  NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Yuichi OSHIMA ,  Katsuaki KAWARA ,  Takashi SHINOHE ,  Tokiyoshi MATSUDA ,  Toshimi HITORA

IPC: C23C16/40 ,  C23C16/06 ,  C23C16/455 ,  C30B29/16 ,  C30B25/14

Abstract: According to an aspect of a present inventive subject matter, a method for producing a crystalline film includes gasifying a metal source to turn the metal source into a metal-containing raw-material gas; supplying the metal-containing raw-material gas and an oxygen-containing raw-material gas into a reaction chamber onto a substrate; and supplying a reactive gas into the reaction chamber onto the substrate to form a crystalline film under a gas flow of the reactive gas.

公开(公告)号：US10204978B2

公开(公告)日：2019-02-12

申请号：US16014633

申请日：2018-06-21

Applicant: FLOSFIA INC.

Inventor： Toshimi Hitora ,  Masaya Oda

IPC: H01L29/04 ,  H01L29/24 ,  H01L29/26 ,  H01L29/66 ,  H01L29/78 ,  H01L29/86 ,  H01L29/87 ,  H01L21/02 ,  H01L21/47 ,  H01L21/477 ,  H01L29/786 ,  H01L29/872 ,  H01L29/861

Abstract: Provided is a highly conductive crystalline multilayer structure including a corundum-structured crystalline oxide thin film whose resistance has not increased even after annealing (heating). The crystalline multilayer structure includes a base substrate and the corundum-structured crystalline oxide thin film disposed directly on the base substrate or with another layer therebetween. The crystalline oxide thin film is 1 μm or more in a thickness and 80 mΩcm or less in an electrical resistivity. A semiconductor device includes the crystalline multilayer structure.

公开(公告)号：US20170179249A1

公开(公告)日：2017-06-22

申请号：US15381894

申请日：2016-12-16

Applicant: FLOSFIA INC.

Inventor： Masaya Oda ,  Rie Tokuda ,  Hitoshi Kambara ,  Katsuaki Kawara ,  Toshimi Hitora

IPC: H01L29/47 ,  H01L29/41

CPC classification number: H01L29/47 ,  H01L21/02414 ,  H01L21/0242 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02581 ,  H01L21/02628 ,  H01L29/04 ,  H01L29/24 ,  H01L29/41 ,  H01L29/43 ,  H01L29/66969 ,  H01L29/872

Abstract: A semiconductor device is provided that is excellent in semiconductor properties and Schottky characteristics. A semiconductor device includes: a semiconductor layer containing a crystalline oxide semiconductor with a corundum structure as a major component; and a Schottky electrode on the semiconductor layer, wherein the Schottky electrode is formed by containing a metal of Groups 4-9 of the periodic table, thereby manufacturing a semiconductor device excellent in semiconductor properties and Schottky characteristics without impairing the semiconductor properties to use the semiconductor device thus obtained for a power device and the like.

公开(公告)号：US09590050B2

公开(公告)日：2017-03-07

申请号：US14578072

申请日：2014-12-19

Applicant: FLOSFIA INC.

Inventor： Toshimi Hitora ,  Masaya Oda ,  Akio Takatsuka

IPC: H01L21/00 ,  H01L29/22 ,  H01L33/28 ,  H01L21/02 ,  H01L29/772 ,  H01L29/778 ,  H01L29/812 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66 ,  H01L29/808 ,  H01L29/872 ,  H01L29/10 ,  H01L33/26 ,  H01L33/42

CPC classification number: H01L29/22 ,  H01L21/02491 ,  H01L21/02565 ,  H01L21/0257 ,  H01L21/0262 ,  H01L29/04 ,  H01L29/1066 ,  H01L29/24 ,  H01L29/66666 ,  H01L29/66734 ,  H01L29/66969 ,  H01L29/7722 ,  H01L29/7786 ,  H01L29/7813 ,  H01L29/7828 ,  H01L29/8083 ,  H01L29/812 ,  H01L29/872 ,  H01L33/26 ,  H01L33/28 ,  H01L33/42 ,  H01L2933/0016

Abstract: Provided is a crystalline multilayer structure having good semiconductor properties. In particular, the crystalline multilayer structure has good electrical properties as follows: the controllability of conductivity is good; and vertical conduction is possible. A crystalline multilayer structure includes a metal layer containing a uniaxially oriented metal as a major component and a semiconductor layer disposed directly on the metal layer or with another layer therebetween and containing a crystalline oxide semiconductor as a major component. The crystalline oxide semiconductor contains one or more metals selected from gallium, indium, and aluminum and is uniaxially oriented.

Abstract translation: 提供了具有良好半导体特性的结晶多层结构。 特别地，结晶多层结构具有如下良好的电性能：导电性的可控性良好; 并且垂直传导是可能的。 结晶多层结构包括含有单轴取向金属作为主要成分的金属层和直接设置在金属层上的半导体层或其间的另一层并且包含结晶氧化物半导体作为主要成分的金属层。 结晶氧化物半导体包含一种或多种选自镓，铟和铝的金属，并且是单轴取向的。

公开(公告)号：US20160222511A1

公开(公告)日：2016-08-04

申请号：US14632768

申请日：2015-02-26

Applicant: FLOSFIA INC.

Inventor： Takahiro Sasaki ,  Masaya Oda ,  Toshimi Hitora

IPC: C23C16/455 ,  C23C16/448 ,  C23C16/458 ,  C23C16/44

CPC classification number: C23C16/45508 ,  B05B17/0615 ,  C23C16/4412 ,  C23C16/448 ,  C23C16/4486 ,  C23C16/45502 ,  C23C16/45506 ,  C23C16/4586

Abstract: Provided is a film forming apparatus which is excellent in the film formation rate and is useful for performing mist CVD. A film forming apparatus includes an atomization/droplet-formation unit for turning a raw-material solution into a mist or droplets a raw-material solution, a carrying unit for carrying the mist or droplets generated in the atomization/droplet-formation unit onto a base using a carrier gas, and a film forming unit for treating the mist or droplets with heat to form a film on the base. The film forming unit is cylindrical or almost cylindrical and has an inlet for introducing the mist or droplets in a side surface thereof so that the mist or droplets is swirled to generate a swirling flow. And the film forming unit has an exhaust outlet in a top surface thereof.

Abstract translation: 本发明提供一种成膜速度优异且可用于雾化CVD的成膜装置。 成膜装置包括用于将原料溶液转化为雾或液滴原料溶液的雾化/液滴形成单元，用于将在雾化/液滴形成单元中产生的雾或液滴携带在载体单元上的载体单元 使用载气的基底，以及用于通过热处理雾或液滴以在基底上形成膜的成膜单元。 成膜单元是圆柱形或几乎圆柱形的，并且具有用于在其侧表面中引入雾或液滴的入口，使得雾或液滴旋转以产生旋流。 并且成膜单元在其顶表面中具有排气口。

公开(公告)号：US20160060788A1

公开(公告)日：2016-03-03

申请号：US14838126

申请日：2015-08-27

Applicant: FLOSFIA INC.

Inventor： Masaya Oda ,  Toshimi Hitora

IPC: C30B19/00 ,  H01L21/288 ,  H01L29/45 ,  C03C17/10 ,  C30B29/02

CPC classification number: C30B19/00 ,  C03C17/10 ,  C03C2217/253 ,  C03C2218/112 ,  C23C16/18 ,  C23C16/4486 ,  C30B29/02 ,  H01L21/288 ,  H01L29/45

Abstract: Provided is a metal film forming method which can form a metal film having excellent adhesion industrially advantageously and a metal film formed by using the method. A method of forming a metal film on a base includes an atomization step of atomizing a raw-material solution into a mist, in which the raw-material is prepared by dissolving or dispersing a metal in an organic solvent containing an oxidant, a chelating agent, or a protonic acid; a carrier-gas supply step of supplying a carrier gas to the mist; a mist supply step of supplying the mist onto the base using the carrier gas; and a metal-film formation step of forming the metal film on part or all of a surface of the base to causing the mist to thermally react.

Abstract translation: 提供一种能够在工业上有利地形成具有优异的粘附性的金属膜和通过使用该方法形成的金属膜的金属膜形成方法。 在基材上形成金属膜的方法包括将原料溶液雾化成雾的雾化步骤，其中原料通过将金属溶解或分散在含有氧化剂的有机溶剂中制备，螯合剂 ，或质子酸; 将载气供给到所述雾中的载气供给工序; 使用所述载气将所述雾供给到所述基底上的雾供给工序; 以及金属膜形成步骤，在基底的一部分或全部表面上形成金属膜，使雾发生反应。

公开(公告)号：US20150279944A1

公开(公告)日：2015-10-01

申请号：US14578017

申请日：2014-12-19

Applicant: FLOSFIA INC.

Inventor： Toshimi Hitora ,  Masaya Oda

IPC: H01L29/24 ,  H01L21/02

CPC classification number: H01L29/24 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02488 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02581 ,  H01L21/02587 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02631 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: Provided is a crystalline multilayer structure having good semiconductor properties. The crystalline multilayer structure includes a base substrate and a corundum-structured crystalline oxide semiconductor thin film disposed directly on the base substrate or with another layer therebetween. The crystalline oxide semiconductor thin film is 0.1 μm or less in a surface roughness (Ra).

Abstract translation: 提供了具有良好半导体特性的结晶多层结构。 结晶多层结构包括直接设置在基底基板上的基底基板和刚玉结构的结晶氧化物半导体薄膜，或者其间具有另一层。 结晶氧化物半导体薄膜的表面粗糙度（Ra）为0.1μm以下。