Abstract:
A packaged sensor assembly includes: a packaging structure, having at least one opening; a humidity sensor and a pressure sensor, which are housed inside the packaging structure and communicate fluidically with the outside through the opening, and a control circuit, operatively coupled to the humidity sensor and to the pressure sensor; wherein the humidity sensor and the control circuit are integrated in a first chip, and the pressure sensor is integrated in a second chip distinct from the first chip and bonded to the first chip.
Abstract:
Disclosed is an integrated circuit, comprising a semiconductor substrate carrying a plurality of circuit elements; and a pressure sensor including a cavity on said semiconductor substrate, said cavity comprising a pair of electrodes laterally separated from each other; and a flexible membrane over and spatially separated from said electrodes such that said membrane interferes with a fringe field between said electrodes, said membrane comprising at least one aperture. A method of manufacturing such an IC is also disclosed.
Abstract:
An embodiment is MEMS device including a first MEMS die having a first cavity at a first pressure, a second MEMS die having a second cavity at a second pressure, the second pressure being different from the first pressure, and a molding material surrounding the first MEMS die and the second MEMS die, the molding material having a first surface over the first and the second MEMS dies. The device further includes a first set of electrical connectors in the molding material, each of the first set of electrical connectors coupling at least one of the first and the second MEMS dies to the first surface of the molding material, and a second set of electrical connectors over the first surface of the molding material, each of the second set of electrical connectors being coupled to at least one of the first set of electrical connectors.
Abstract:
One example discloses a MEMS device, including: a cavity having an internal environment; a seal isolating the internal environment from an external environment outside the MEMS device; wherein the seal is susceptible to damage in response to a calibration unsealing energy; wherein upon damage to the seal, a pathway forms which couples the internal environment to the external environment; and a calibration circuit capable of measuring the internal environment before and after damage to the seal.
Abstract:
A system and/or method for utilizing MEMS switching technology to operate MEMS sensors. As a non-limiting example, a MEMS switch may be utilized to control DC and/or AC bias applied to MEMS sensor structures. Also for example, one or more MEMS switches may be utilized to provide drive signals to MEMS sensors (e.g., to provide a drive signal to a MEMS gyroscope).
Abstract:
A method for manufacturing a resistive element includes: preparing a substrate including an n-type silicon layer; doping the silicon layer with an impurity to thereby form a resistive region; heat-treating the resistive region by any of rapid thermal annealing, flash lamp annealing, and excimer laser annealing; and epitaxially growing silicon on the resistive region to thereby form a covering layer.
Abstract:
An electro-mechanical miniaturized device 1 for pressure measurements is described, the device comprising at least one first electro-mechanical miniaturized pressure sensor member 11, configured to detect a respective first pressure value P1 and to generate a first electrical signal S1 representative of the first pressure value P1, and further comprising at least one second electro-mechanical miniaturized pressure sensor member 12, configured to detect a respective second pressure value P2 and to generate a second electrical signal S2 representative of said second pressure value P2. The second sensor member 12 is arranged within a casing 13 suitable to seal it. The device 1 further comprises electronic processing means 10, operatively connected to the first 11 and the second 12 sensor members, and configured to determine a measured pressure value P based on said first S1 and second S2 electrical signals; and finally comprises interface means 15, operatively connected to the electronic processing means 10 and configured to provide in output said measured pressure value P. The first 11 and second 12 sensor members, the electronic processing means 10 and the interface means 15 are comprised in a single integrated device.
Abstract:
Stress relief structures and methods that can be applied to MEMS sensors requiring a hermetic seal and that can be simply manufactured are disclosed. The system includes a sensor having a first surface and a second surface, the second surface being disposed away from the first surface, the second surface also being disposed away from a package surface and located between the first surface and the package surface, a number of support members, each support member extending from the second surface to the package surface, the support members being disposed on and operatively connected to only a portion of the second surface. The support member are configured to reduce stress produced by package-sensor interaction.
Abstract:
A capacitance type sensor has a semiconductor substrate having a vertically opened penetration hole, a movable electrode film arranged above the penetration hole such that a periphery portion opposes to a top surface of the semiconductor substrate with a gap provided, and a fixed electrode film arranged above the movable electrode film with a gap with respect to the movable electrode film. A concave portion having at least a part thereof formed by an inclined surface is provided in the top surface of the semiconductor substrate in a region of the top surface of the semiconductor substrate which overlaps the periphery portion of the movable electrode film.
Abstract:
The present invention provides a 3D System (“3DS”) MEMS architecture that enables the integration of MEMS devices with IC chips to form a System on Chip (SoC) or System in Package (SiP). The integrated MEMS system comprises at least one MEMS chip, including MEMS transducers, and at least one IC chip, including not only MEMS processing circuitry, but also additional/auxiliary circuitry to process auxiliary signals. The MEMS chip can include first and second insulated conducting pathways. The first pathways conduct the MEMS-signals between the transducers and the IC chip, for processing; and the second conducting pathways can extend through the entire thickness of the MEMS chip, to conduct auxiliary signals, such as power, RF, I/Os, to the IC chip, to be processed the additional circuitry.