Abstract:
Scanning Transmission Ion Microscope. The microscope includes a bright helium ion source to generate an ion beam and a focusing electrostatic optical column to focus the ion beam. A translation stage supports a sample to receive the focused ion beam and a detector responds to ions transmitted through the sample to generate a signal from which properties of the sample may be displayed.
Abstract:
In one aspect the invention provides a gas field ion microscope that includes an ion source in connection with an optical column, such that an ion beam generated at the ion source travels through the optical column and impinges on a sample. The ion source includes an emitter having a width that tapers to a tip comprising a few atoms. In other aspects, the invention provides methods for using the ion microscope to analyze samples and enhancing the performance of a gas field ion source.
Abstract:
A method for fabricating exactly aligned apertures for use in electron and ion microscopy involves the placing of a very sharply pointed tip (1) in front of a set of extremely thin, precisely spaced metal foils (3,5) in an atmosphere of heavy gas atoms. The application of an elevated voltage at the tip (1) will result in a sputtering operation to commence and erode the metal foils (3,5) at a location underneath the facing tip (1). The sputtering operation is continued until the first ions are detected to emerge on the far side of the lens structure (2).
Abstract:
An ion beam apparatus with an ion gun in which a gas to be ionized is supplied to the periphery of an emitter and a high voltage is applied between the emitter and an extractor so that the gas introduced to the vicinity of the emitter tip is ionized to generate an ion beam. The structure of the ion gun is formed so as to achieve a high ion current density of the ion beam as well as to prevent short-circuiting that may otherwise be caused by atmospheric electric discharge between the emitter and the extractor.
Abstract:
A processing method using a focused ion beam is proposed which uses a focused ion beam radiation apparatus. When a specimen is irradiated with the focused ion beam in order to be etched, the desired etching depth of the specimen is preset as a function of a location. The ion dose of the focused ion beam, the acceleration voltage, or the etching time may be varied in accordance with the preset data.
Abstract:
In order to provide an ion beam apparatus excellent in safety and stability even when a sample is irradiated with hydrogen ions, the ion beam apparatus includes a vacuum chamber, a gas field ion source that is installed in the vacuum chamber and has an emitter tip, and gas supply means for supplying a gas to the emitter tip. The gas supply means includes a mixed gas chamber that is filled with a hydrogen gas and a gas for diluting the hydrogen gas below an explosive lower limit.