Field emission cathode type electron gun with individually-controlled
cathode segments
    95.
    发明授权
    Field emission cathode type electron gun with individually-controlled cathode segments 失效
    具有单独控制阴极段的场发射阴极型电子枪

    公开(公告)号:US5977719A

    公开(公告)日:1999-11-02

    申请号:US937615

    申请日:1997-09-25

    Inventor: Hideo Makishima

    CPC classification number: H01J3/022

    Abstract: In a field emission cathode type electron gun, a plurality of cathode segments and a plurality of gate control circuits are provided. Each of the gate control circuits is connected to one of the cathode segments. Each of the cathode segments includes a cathode electrode, a gate electrode, an insulating layer therebetween, and a plurality of cone-shaped emitters formed within openings perforated in the gate electrode and the insulating layer. Each of the gate control circuits detects a current flowing through one of the cathode segments and controls a voltage of the gate electrode of the respective cathode segments in accordance with the detected current, so that the detected current is brought close to a definite value.

    Abstract translation: 在场发射阴极型电子枪中,设置有多个阴极段和多个栅极控制电路。 每个栅极控制电路连接到一个阴极段。 每个阴极段包括阴极电极,栅电极,其间的绝缘层,以及形成在栅电极和绝缘层中穿孔的开口内的多个锥形发射体。 每个栅极控制电路检测流过一个阴极段的电流,并且根据检测到的电流来控制各个阴极段的栅电极的电压,使得检测到的电流接近确定的值。

    Field-emission cathode capable of forming an electron beam having a high
current density and a low ripple
    96.
    发明授权
    Field-emission cathode capable of forming an electron beam having a high current density and a low ripple 失效
    能够形成具有高电流密度和低纹波的电子束的场致发射阴极

    公开(公告)号:US5929557A

    公开(公告)日:1999-07-27

    申请号:US962874

    申请日:1997-11-03

    CPC classification number: H01J3/022 H01J23/06 H01J2223/04

    Abstract: A field-emission cold cathode has a conductive cold-cathode substrate on which a plurality of conical emitters and a base insulator layer are formed. A ring-shaped gate electrode, a plate-shaped inner electrode, and a ring-shaped outer electrode are formed on the base insulator layer with the ring-shaped gate electrode disposed between the plate-shaped inner electrode and the ring-shaped outer electrode. A voltage supplying unit supplies the ring-shaped gate electrode, the plate-shaped inner electrode, and the ring-shaped outer electrode with a gate voltage, an inner electrode voltage, and an outer electrode voltage, each referenced to a substrate potential of the conductive cold-cathode substrate, wherein the gate voltage is higher than each of the inner electrode voltage and the outer electrode voltage.

    Abstract translation: 场发射冷阴极具有形成有多个锥形发射体和基极绝缘体层的导电性冷阴极基板。 环状栅电极,板状内电极和环状外电极形成在基绝缘体层上,环形栅电极设置在板状内电极和环状外电极之间 。 电压供给单元以栅极电压,内部电极电压和外部电极电压供给环状的栅电极,板状的内部电极和环状的外部电极,各自以基板电位为基准 导电性的冷阴极基板,其中栅极电压高于内部电极电压和外部电极电压中的每一个。

    Multi-emitter electron gun of a field emission type capable of emitting
electron beam with its divergence suppressed
    97.
    发明授权
    Multi-emitter electron gun of a field emission type capable of emitting electron beam with its divergence suppressed 失效
    能够抑制其发散的能够发射电子束的场致发射型多射极电子枪

    公开(公告)号:US5717275A

    公开(公告)日:1998-02-10

    申请号:US606415

    申请日:1996-02-23

    Inventor: Hisashi Takemura

    CPC classification number: H01J3/022

    Abstract: In a multi-emitter electron gun of a field-emission type constructed by the integrated circuit technique, each emitter comprising an emission electrode having an emissive point, an extracting gate electrode, and a focusing electrode, the focusing electrode in a peripheral zone of the multi-emitter electron gun is brought to a lower electric potential as compared with that in a central zone so that the emitter in the peripheral zone has a beam convergence higher than that of the emitter in the central zone. Instead, the focusing electrode in the peripheral zone has a greater thickness as compared with that in the central zone. Alternatively, the focusing electrode in the peripheral zone has a smaller aperture as compared with that in the central zone. Alternatively, the interval between the extracting gate electrode and the focusing electrode is wider in the emitter in the central zone as compared with that in the peripheral zone. Alternatively, the emitter in the peripheral zone alone comprises the focusing electrode of two layers with an upper-layer focusing electrode kept at an electric potential lower than that of a lower-layer focusing electrode. Alternatively, the emitter in the central zone alone further comprises an electrode located between the extracting gate electrode and the focusing electrode and brought to an electric potential substantially equal to that of the extracting gate electrode.

    Abstract translation: 在通过集成电路技术构成的场致发射型多射极电子枪中,每个发射器包括具有发射点的发射电极,提取栅电极和聚焦电极,聚焦电极在 与中心区域相比,多射极电子枪的电位降低,使得周边区域中的发射极具有比中心区域的发射极更高的光束会聚。 相反,周边区域中的聚焦电极与中心区域相比具有更大的厚度。 或者,周边区域中的聚焦电极与中心区域相比具有较小的孔径。 或者,与外围区域相比,中央区域的发射极之间的提取栅电极和聚焦电极之间的间隔较宽。 或者,外围区域中的发射极单独包括两层聚焦电极,上层聚焦电极的电位低于下层聚焦电极的电位。 或者,中心区域中的发射极单独进一步包括位于提取栅电极和聚焦电极之间的电极,并使电位基本上等于提取栅电极的电位。

    Micropoint cathode electron source with a focusing electrode
    98.
    发明授权
    Micropoint cathode electron source with a focusing electrode 失效
    具有聚焦电极的微点阴极电子源

    公开(公告)号:US5581146A

    公开(公告)日:1996-12-03

    申请号:US458821

    申请日:1995-06-02

    CPC classification number: H01J9/025 H01J3/022

    Abstract: Electron source made notably in the form of a micropoint cathode electrode in which a microcathode is located in a cavity (CA) of a dielectric (3). A first gate electrode (VG1) surrounds the cavity (CA) and a second gate electrode (VG2) surrounds the first gate electrode (VG1). The different electrodes are carried to potentials such that the first gate electrode (VG1) acts as an extraction electrode and the second gate electrode acts as a focusing electrode.

    Abstract translation: 特别是以微点阴极电极的形式形成的电子源,其中微电极位于电介质(3)的空腔(CA)中。 第一栅电极(VG1)包围空腔(CA),第二栅电极(VG2)围绕第一栅电极(VG1)。 不同的电极被携带到电位,使得第一栅电极(VG1)用作引出电极,第二栅电极用作聚焦电极。

    Field emitter with focusing ridges situated to sides of gate
    99.
    发明授权
    Field emitter with focusing ridges situated to sides of gate 失效
    具有位于门侧面的聚焦脊的场发射器

    公开(公告)号:US5528103A

    公开(公告)日:1996-06-18

    申请号:US188855

    申请日:1994-01-31

    CPC classification number: H01J3/022 H01J29/085 H01J31/127

    Abstract: A gated field-emission structure contains a emitter electrode (46), an overlying electrically insulating layer (48, and one or more electron-emissive elements (52) situated in one or more apertures extending through the insulating layer. A patterned gate electrode (50) through which each electron-emissive element is exposed overlies the insulating layer. Focusing ridges (54) are situated on the insulating layer on opposite sides of the gate electrode. The focusing ridges, which normally extend to a considerably greater height than the gate electrode, cause emitted electrons to converge into a narrow band.

    Abstract translation: 门控场致发射结构包含发射极电极(46),覆盖电绝缘层(48)和位于延伸穿过绝缘层的一个或多个孔隙中的一个或多个电子发射元件(52) 每个电子发射元件通过其暴露在绝缘层上方,聚焦脊(54)位于栅电极相对侧上的绝缘层上,该聚焦脊通常延伸到比栅极大得多的高度 电极,使发射的电子收敛成窄带。

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