Abstract:
Provided is an electron beam lens for a micro-column electron beam apparatus and a method of manufacturing the same. A photosensitive glass substrate is used as a base isolation substrate and a thin metal film is grown by a plating method. Holes through which electron beam passes are formed by a lift off method after forming a resist pattern shaped as a hole on a seed metal layer and plating the thin metal film.
Abstract:
A plurality of field emission device cathodes each generate emission of electrons, which are then controlled and focused using various electrodes to produce an electron beam. Horizontal and vertical deflection techniques, similar to those used within a cathode ray tube, operate to scan the individual electron beams onto portions of a phosphor screen in order to generate images. The use of the plurality of field emission cathodes provides for a flatter screen depth than possible with a typical cathode ray tube.
Abstract:
Provided is an electron beam lens for a micro-column electron beam apparatus and a method of manufacturing the same. A photosensitive glass substrate is used as a base isolation substrate and a thin metal film is grown by a plating method. Holes through which electron beam passes are formed by a lift off method after forming a resist pattern shaped as a hole on a seed metal layer and plating the thin metal film.
Abstract:
An optical element includes two electrodes 1 and 2 arranged at a distance to oppose each other and configured to converge an electron beam. The opposing surfaces of the electrodes 1 and 2 are so formed as to be cylindrically symmetrical along the beam passing direction and to form curves obtained by deforming hyperbolas in a direction perpendicular to the beam passing direction, in order that an electric field whose effective part except for an arbitrary constant of the field potential is given by.phi.=(k/2)r.sup.2 -.alpha.lnr-kz.sup.2is spatially partially formed in a cylindrical coordinate system defined by (r, z, .theta.).
Abstract:
In a field emission cathode type electron gun, a plurality of cathode segments and a plurality of gate control circuits are provided. Each of the gate control circuits is connected to one of the cathode segments. Each of the cathode segments includes a cathode electrode, a gate electrode, an insulating layer therebetween, and a plurality of cone-shaped emitters formed within openings perforated in the gate electrode and the insulating layer. Each of the gate control circuits detects a current flowing through one of the cathode segments and controls a voltage of the gate electrode of the respective cathode segments in accordance with the detected current, so that the detected current is brought close to a definite value.
Abstract:
A field-emission cold cathode has a conductive cold-cathode substrate on which a plurality of conical emitters and a base insulator layer are formed. A ring-shaped gate electrode, a plate-shaped inner electrode, and a ring-shaped outer electrode are formed on the base insulator layer with the ring-shaped gate electrode disposed between the plate-shaped inner electrode and the ring-shaped outer electrode. A voltage supplying unit supplies the ring-shaped gate electrode, the plate-shaped inner electrode, and the ring-shaped outer electrode with a gate voltage, an inner electrode voltage, and an outer electrode voltage, each referenced to a substrate potential of the conductive cold-cathode substrate, wherein the gate voltage is higher than each of the inner electrode voltage and the outer electrode voltage.
Abstract:
In a multi-emitter electron gun of a field-emission type constructed by the integrated circuit technique, each emitter comprising an emission electrode having an emissive point, an extracting gate electrode, and a focusing electrode, the focusing electrode in a peripheral zone of the multi-emitter electron gun is brought to a lower electric potential as compared with that in a central zone so that the emitter in the peripheral zone has a beam convergence higher than that of the emitter in the central zone. Instead, the focusing electrode in the peripheral zone has a greater thickness as compared with that in the central zone. Alternatively, the focusing electrode in the peripheral zone has a smaller aperture as compared with that in the central zone. Alternatively, the interval between the extracting gate electrode and the focusing electrode is wider in the emitter in the central zone as compared with that in the peripheral zone. Alternatively, the emitter in the peripheral zone alone comprises the focusing electrode of two layers with an upper-layer focusing electrode kept at an electric potential lower than that of a lower-layer focusing electrode. Alternatively, the emitter in the central zone alone further comprises an electrode located between the extracting gate electrode and the focusing electrode and brought to an electric potential substantially equal to that of the extracting gate electrode.
Abstract:
Electron source made notably in the form of a micropoint cathode electrode in which a microcathode is located in a cavity (CA) of a dielectric (3). A first gate electrode (VG1) surrounds the cavity (CA) and a second gate electrode (VG2) surrounds the first gate electrode (VG1). The different electrodes are carried to potentials such that the first gate electrode (VG1) acts as an extraction electrode and the second gate electrode acts as a focusing electrode.
Abstract:
A gated field-emission structure contains a emitter electrode (46), an overlying electrically insulating layer (48, and one or more electron-emissive elements (52) situated in one or more apertures extending through the insulating layer. A patterned gate electrode (50) through which each electron-emissive element is exposed overlies the insulating layer. Focusing ridges (54) are situated on the insulating layer on opposite sides of the gate electrode. The focusing ridges, which normally extend to a considerably greater height than the gate electrode, cause emitted electrons to converge into a narrow band.
Abstract:
A planar electron-optical lens is obtained on a semiconductor cathode surface by providing an extra electrode (16) around the gate electrode (14). Dependent on the applied voltage, this configuration operates, for example, as a positive lens which supplies parallel beams without dispersion, suitable for thin, flat display devices. A large positioning tolerance is obtained due to the inherent magnification of the beam diameter in the semiconductor device, while a grid can be dispensed with.