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    Boron implanting using a co-gas
    92.
    发明授权
    Boron implanting using a co-gas 有权

    公开(公告)号：US10446371B2

    公开(公告)日：2019-10-15

    申请号：US15859844

    申请日：2018-01-02

    Applicant: Varian Semiconductor Equipment Associates, Inc.

    Inventor： Bon-Woong Koo ,  Vikram M. Bhosle ,  John A. Frontiero

    IPC: C23C18/48 ,  H01J37/317 ,  H01J37/08 ,  C23C16/513 ,  C23C14/48

    Abstract: An apparatus and methods of improving the ion beam quality of a halogen-based source gas are disclosed. Unexpectedly, the introduction of a noble gas, such as argon or neon, to an ion source chamber may increase the percentage of desirable ion species, while decreasing the amount of contaminants and halogen-containing ions. This is especially beneficial in non-mass analyzed implanters, where all ions are implanted into the workpiece. In one embodiment, a first source gas, comprising a processing species and a halogen is introduced into a ion source chamber, a second source gas comprising a hydride, and a third source gas comprising a noble gas are also introduced. The combination of these three source gases produces an ion beam having a higher percentage of pure processing species ions than would occur if the third source gas were not used.

    CREATING ION ENERGY DISTRIBUTION FUNCTIONS (IEDF)
    94.
    发明申请
    CREATING ION ENERGY DISTRIBUTION FUNCTIONS (IEDF) 审中-公开

    公开(公告)号：US20190259562A1

    公开(公告)日：2019-08-22

    申请号：US16405377

    申请日：2019-05-07

    Applicant: APPLIED MATERIALS, INC.

    Inventor： LEONID DORF ,  TRAVIS KOH ,  OLIVIER LUERE ,  OLIVIER JOUBERT ,  PHILIP A. KRAUS ,  RAJINDER DHINDSA ,  JAMES ROGERS

    IPC: H01J37/08 ,  H01J37/248

    Abstract: Systems and methods for creating arbitrarily-shaped ion energy distribution functions using shaped-pulse-bias. In an embodiment, a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and modulating the amplitude of the wafer voltage to produce a predetermined number of pulses to determine an ion energy distribution function. In another embodiment a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and applying a ramp voltage to the electrode that overcompensates for ion current on the wafer or applying a ramp voltage to the electrode that undercompensates for ion current on the wafer.

    PLASMA BRIDGE NEUTRALIZER FOR ION BEAM ETCHING
    95.
    发明申请
    PLASMA BRIDGE NEUTRALIZER FOR ION BEAM ETCHING 审中-公开

    公开(公告)号：US20190259559A1

    公开(公告)日：2019-08-22

    申请号：US16270440

    申请日：2019-02-07

    Applicant: VEECO INSTRUMENTS, INC.

    Inventor： Rustam YEVTUKHOV ,  Ivan SHKURENKOV ,  Boris DRUZ ,  Alan HAYES ,  Robert HIERONYMI

    IPC: H01J37/02 ,  H01J37/06 ,  H01J37/08 ,  H01J3/02

    Abstract: An ion beam neutralization system, often referred to as a plasma bridge neutralizer (PBN), as part of an ion beam (etch) system. The system utilizes an improved filament thermo-electron emitter PBN design, that when utilized in a particular method of operation, greatly extends filament life and minimizes variation in neutralizer operating parameters for long periods of operation. The PBN includes a solenoidal electromagnetic that produces an axial magnetic field within the PBN and a magnetic concentrator that facilitates the alignment of the magnetic field and inhibits stray fields. The PBN can readily provide a filament lifetime of at least 500 hours.

    Ion focusing device
    96.
    发明授权
    Ion focusing device 有权

    公开(公告)号：US10332723B1

    公开(公告)日：2019-06-25

    申请号：US15849417

    申请日：2017-12-20

    Applicant: Battelle Memorial Institute

    Inventor： Yehia M. Ibrahim ,  Richard D. Smith

    IPC: H01J37/08 ,  H01J37/05 ,  H01J49/00 ,  H01J37/317 ,  H01J37/21 ,  H01J49/06

    Abstract: Apparatus include a plurality of electrode arrangements spaced apart from each other opposite an ion propagation axis and defining an ion transfer channel that extends along the ion propagation axis that tapers between an input end that is situated to receive ions and an output end that is situated to couple the received ions to an input end of an ion guide. Methods include positioning a plurality of electrode arrangements at oblique angles opposite an ion propagation axis so as to form a ion transfer channel that tapers between an input end and an output end, and coupling the output end of the ion transfer channel to an input end of an ion optical element so as to direct ions in the ion transfer channel into the ion optical element. Related systems are also disclosed.

    ION FOCUSING DEVICE
    98.
    发明申请
    ION FOCUSING DEVICE 审中-公开

    公开(公告)号：US20190189393A1

    公开(公告)日：2019-06-20

    申请号：US15849417

    申请日：2017-12-20

    Applicant: Battelle Memorial Institute

    Inventor： Yehia M. Ibrahim ,  Richard D. Smith

    IPC: H01J37/317 ,  H01J37/08 ,  H01J37/21 ,  H01J49/06 ,  H01J37/05

    CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J37/08 ,  H01J37/21 ,  H01J49/062 ,  H01J49/065 ,  H01J2237/049 ,  H01J2237/30472

    Abstract: Apparatus include a plurality of electrode arrangements spaced apart from each other opposite an ion propagation axis and defining an ion transfer channel that extends along the ion propagation axis that tapers between an input end that is situated to receive ions and an output end that is situated to couple the received ions to an input end of an ion guide. Methods include positioning a plurality of electrode arrangements at oblique angles opposite an ion propagation axis so as to form a ion transfer channel that tapers between an input end and an output end, and coupling the output end of the ion transfer channel to an input end of an ion optical element so as to direct ions in the ion transfer channel into the ion optical element. Related systems are also disclosed.

    Ion Source Crucible For Solid Feed Materials
    99.
    发明申请
    Ion Source Crucible For Solid Feed Materials 审中-公开

    公开(公告)号：US20190180971A1

    公开(公告)日：2019-06-13

    申请号：US16190649

    申请日：2018-11-14

    Applicant: APPLIED Materials, Inc.

    Inventor： Klaus Becker ,  Daniel Alvarado ,  Michael St. Peter ,  Graham Wright

    IPC: H01J37/08 ,  H01J37/34

    Abstract: An ion source with a crucible is disclosed. In some embodiments, the crucible is disposed in one of the ends of the ions source, opposite the cathode. In other embodiments, the crucible is disposed in one of the side walls. A feed material, which may be in solid form is disposed in the crucible. In certain embodiments, the feed material is sputtered by ions and electrons in the plasma. In other embodiments, the feed material is heated so that it vaporizes. The ion source may be oriented so that the crucible is disposed in the lowest wall so that gravity retains the feed material in the crucible.

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