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    METHOD TO FABRICATE A MOULD FOR LITHOGRAPHY BY NANO-IMPRINTING
    105.
    发明申请
    METHOD TO FABRICATE A MOULD FOR LITHOGRAPHY BY NANO-IMPRINTING 有权
    用于通过纳米压印来雕刻模具的方法

    公开(公告)号：US20100227018A1

    公开(公告)日：2010-09-09

    申请号：US12715801

    申请日：2010-03-02

    Applicant: Stèfan LANDIS

    Inventor： Stèfan LANDIS

    IPC: C23F1/00 ,  B29C59/02

    CPC classification number: G03F7/2059 ,  B81C99/009 ,  B81C2201/0159 ,  B81C2201/034 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/0017

    Abstract: The invention concerns a device forming an imprint mould in three dimensions and comprising at least: a substrate, comprising at least one alternation of layers having at least one part perpendicular to the plane of the substrate, in a first type of material and a second type of material which can be etched selectively relative to each other, a surface topology comprising at least: a) first patterns whose top lies at a first level relative to a surface of the substrate located either side of said topology, these first patterns being in a first type of material, b) and second patterns having at least a second level relative to said surface of the substrate, different from and lower than the first level, and these second patterns being in a second type of material.

    Abstract translation: 本发明涉及一种在三维上形成压印模具的装置，其至少包括：基底，其包括至少一个具有垂直于基底的平面的部分的至少一部分的交替层，第一类型的材料和第二类型 可以相对于彼此选择性蚀刻的材料，表面拓扑结构至少包括：a）第一图案，其顶部相对于位于所​​述拓扑结构的任一侧的所述衬底的表面处于第一水平，所述第一图案位于 第一类型的材料，b）和具有相对于衬底的所述表面至少第二级别的第二图案，不同于和低于第一层级，并且这些第二图案是第二类型的材料。

    Integrated Encapsulation for MEMS Devices
    106.
    发明申请
    Integrated Encapsulation for MEMS Devices 审中-公开
    MEMS器件的集成封装

    公开(公告)号：US20100221463A1

    公开(公告)日：2010-09-02

    申请号：US12607415

    申请日：2009-10-28

    Applicant: Imed Zine-El-Abidine ,  Michael Okoniewski

    Inventor： Imed Zine-El-Abidine ,  Michael Okoniewski

    IPC: G03F7/20 ,  B32B1/00

    CPC classification number: B81C1/00333 ,  B81C2201/0159 ,  B81C2203/0136 ,  B81C2203/0154 ,  Y10T428/13

    Abstract: In one general aspect, methods and articles of manufacture for creating micro-structures are disclosed. In one embodiment, the micro-structures are configured to provide a desired level of hermiticity to other micro-sized devices, such as MEMS and microfluidic devices. In one embodiment, the microstructures are formed from a single species of photoresist, where the photoresist is lithographically patterned to encapsulate the micro-sized device. In general, the ability to form an encapsulating micro-structure from a single photoresist relies in part on applying variable light doses to a later of photoresist to affect a desired level of cross-linking within the photoresist.

    Abstract translation: 在一般的方面，公开了用于产生微结构的方法和制品。 在一个实施例中，微结构被配置为向其他微尺寸装置（例如MEMS和微流体装置）提供期望水平的隐性。 在一个实施例中，微结构由单一光致抗蚀剂形成，其中光刻胶被光刻图案化以封装微尺寸的器件。 通常，从单一光致抗蚀剂形成封装微结构的能力部分地依赖于将可变光剂量应用于稍后的光致抗蚀剂以影响光致抗蚀剂内期望的交联水平。

    Graft Pattern-Forming Method, Graft Pattern Material, Lithography Method, Conductive Pattern - Forming Method, Conductive Pattern, Color Filter Producing Method, Color Filter, and Mircrolens Producing Method
    108.
    发明申请
    Graft Pattern-Forming Method, Graft Pattern Material, Lithography Method, Conductive Pattern - Forming Method, Conductive Pattern, Color Filter Producing Method, Color Filter, and Mircrolens Producing Method 审中-公开
    移植图案形成方法，移植图案材料，平版印刷方法，导电图案 - 成型方法，导电图案，滤色器生产方法，滤色器和Mircrolens生产方法

    公开(公告)号：US20080014530A1

    公开(公告)日：2008-01-17

    申请号：US11628081

    申请日：2005-05-31

    Applicant: Koichi Kawamura

    Inventor： Koichi Kawamura

    IPC: G03F7/004 ,  B82B3/00 ,  G02B3/00 ,  H01L21/027 ,  H05K3/10 ,  G03F7/26 ,  G02B5/20

    CPC classification number: B81C1/00031 ,  B81C2201/0159 ,  B81C2201/0198 ,  B82Y30/00 ,  G03F7/0046 ,  G03F7/027 ,  G03F7/029 ,  H05K3/064

    Abstract: An object of the present invention is to provide a graft pattern-forming method giving a graft pattern allowing formation of a high-resolution pattern that has an oil- and water-repellent region in a commonly-used exposure machine, a lithography method of using the oil- and water-repellent graft pattern formed by the method as an etching stopper, and a conductive pattern-forming method, a color filter forming method, and a microlens production process by using the graft pattern formed by the graft pattern-forming method. The graft pattern-forming method comprises forming a graft polymer-generated region and a non-generated region thereon by bonding a compound having a photopolymerization-initiating site that initiates radical polymerization by photocleavage radical polymerization and a base material-bonding site onto a base material surface in a patterned form, and additionally, by bringing the radically polymerizable compound having an oil- and water-repellent functional group into contact therewith and exposing the entire surface to light, or alternatively, bonding the compound having a polymerization-initiating site that initiates radical polymerization by photocleavage and a base material-bonding site to the base material, bringing a radically polymerizable compound having an oil- and water-repellent functional group into contact therewith, and exposing the region in a patterned form.

    Abstract translation: 本发明的目的是提供一种移植物图案形成方法，其形成允许在常用曝光机中形成具有拒油拒油区域的高分辨率图案的移植图案，使用的平版印刷方法 通过作为蚀刻停止剂的方法形成的拒水拒水接枝图案和导电图案形成方法，滤色器形成方法和微透镜制造方法，通过使用通过接枝图案形成方法形成的接枝图案 。 接枝图案形成方法包括在其上形成接枝聚合物产生区域和非生成区域，其中将通过光致自由基聚合引发自由基聚合的光聚合引发位点的化合物和基材粘合位点结合到基材上 表面为图案形式，另外，通过使具有拒水拒水官能团的自由基聚合性化合物与其接触并将整个表面曝光，或者将具有引发剂的聚合引发部位的化合物 通过光切割进行自由基聚合和与基材的基材接合位置，使具有拒油拒水官能团的自由基聚合性化合物与其接触，并以图案形式曝光该区域。

    Semiconductor device manufacturing method
    109.
    发明授权
    Semiconductor device manufacturing method 有权
    半导体器件制造方法

    公开(公告)号：US07094620B2

    公开(公告)日：2006-08-22

    申请号：US10505180

    申请日：2003-01-29

    Applicant: Mika Okumura ,  Makio Horikawa ,  Kimitoshi Satou

    Inventor： Mika Okumura ,  Makio Horikawa ,  Kimitoshi Satou

    IPC: H01L21/00 ,  H01L29/82

    CPC classification number: B81C1/00095 ,  B81B2201/0235 ,  B81C2201/0109 ,  B81C2201/0159 ,  G01P15/0802 ,  G01P15/125 ,  H01L29/84

    Abstract: A semiconductor device manufacturing method includes forming an insulating layer on a semiconductor substrate, forming, over the insulating layer, a first sacrificial layer having a first opening, and forming, on the sacrificial layer, a first electrode and a dummy body between the first electrode and the first opening. A photoresist is formed on the structure obtained by the previous steps, the photoresist having a second opening that opens inside the first opening. The insulating layer is etched using the photoresist as a mask to expose the semiconductor substrate, and a second electrode is formed in contact with the exposed semiconductor substrate. The sacrificial layer is removed.

    Abstract translation: 一种半导体器件制造方法，包括在半导体衬底上形成绝缘层，在所述绝缘层上形成具有第一开口的第一牺牲层，并且在所述牺牲层上形成第一电极和所述第一电极之间的虚设体 和第一个开幕。 在由前述步骤获得的结构上形成光致抗蚀剂，光致抗蚀剂具有在第一开口内部开口的第二开口。 使用光致抗蚀剂作为掩模蚀刻绝缘层以暴露半导体衬底，并且形成与暴露的半导体衬底接触的第二电极。 牺牲层被去除。

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