Semiconductor device to be mounted on main circuit board and process for manufacturing same device
    110.
    发明授权
    Semiconductor device to be mounted on main circuit board and process for manufacturing same device 有权
    要安装在主电路板上的半导体器件和用于制造相同器件的工艺

    公开(公告)号:US06344695B1

    公开(公告)日:2002-02-05

    申请号:US09414503

    申请日:1999-10-08

    Applicant: Kei Murayama

    Inventor: Kei Murayama

    Abstract: A semiconductor chip has an active surface with electrodes thereon and an insulating layer covering the active surface and having through holes therein through which corresponding electrodes are exposed. Rewiring circuits are formed on the insulating layer, each having a first terminal end extending through a corresponding through hole and electrically connected to a respective electrode and a second terminal end comprising a conductive pad. Respective inner bumps are formed on the second terminal ends of the rewiring circuits. An insulating film is formed on the rewiring circuits and exposed surfaces of the insulating layer and through holes are formed therein corresponding to the conductive pads and into which respective inner bumps are inserted. A respective outer bump is superimposed on each inner bump in the insulating film and projects beyond an exposed surface of the insulating film remote from the semiconductor chip. In an alternative, inner bumps are omitted and the outer bumps are directly superimposed on the conductive pads in the corresponding through holes. A method of making the semiconductor device provides for superimposing outer bumps either directly on the respective conductive pads in the corresponding through holes, where inner bumps are not employed, or superimposing same on the respective inner bumps after superimposing the inner bumps on the respective conductive pads.

    Abstract translation: 半导体芯片具有其上具有电极的活性表面和覆盖有源表面的绝缘层,并且在其中具有通孔,相应的电极通过该孔暴露。 重叠电路形成在绝缘层上,每个具有延伸穿过相应通孔并且电连接到相应电极的第一端部和包括导电焊盘的第二端子。 在再布线电路的第二端部形成有各自的内部凸点。 在再布线电路上形成绝缘膜,绝缘层的露出表面形成有与导电焊盘相对应的通孔,并且插入有各自的内凸块。 相应的外部凸起叠加在绝缘膜的每个内部凸起上,并突出超过远离半导体芯片的绝缘膜的暴露表面。 另一方面,省略了内部凸块,并且外部凸块直接叠加在相应通孔中的导电焊盘上。 制造半导体器件的方法提供了将外部凸块直接叠加在不使用内部凸起的相应通孔中的相应导电焊盘上,或者将内部凸块叠加在各个导电焊盘上之后将其叠加在相应的内部凸起上 。

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