公开(公告)号：US07425711B2

公开(公告)日：2008-09-16

申请号：US11622966

申请日：2007-01-12

Applicant: David M. Burtner ,  Scott A. Townsend ,  Daniel E. Siegfried

Inventor： David M. Burtner ,  Scott A. Townsend ,  Daniel E. Siegfried

IPC: H01J7/24 ,  H01J49/10

CPC classification number: H01J27/022 ,  H01J1/42 ,  H01J27/14 ,  H01J2237/03 ,  H01J2237/08

Abstract: A thermal control plate is easily removable and replaceable in an ion source. The ion source has a removable anode assembly, including the thermal control plate, that is separable and from a base assembly to allow for ease of servicing consumable components of the anode assembly. The thermal control plate may support a gas distributor and an anode in the anode assembly. The thermal control plate may have a port for passing working gas from one side of the thermal control plate to the other. An interface surface on the thermal control plate may have a pattern of recesses to allow the working gas to disperse underneath the gas distributor.

Abstract translation: 热控制板可以在离子源中轻松拆卸和更换。 离子源具有可移除的阳极组件，包括热控制板，其可分离并且与基座组件相隔离，以便易于维护阳极组件的可消耗部件。 热控制板可以支撑阳极组件中的气体分配器和阳极。 热控制板可以具有用于将工作气体从热控制板的一侧传递到另一侧的端口。 热控制板上的界面可以具有凹槽的图案，以允许工作气体分散在气体分配器下面。

公开(公告)号：US20070272358A1

公开(公告)日：2007-11-29

申请号：US11440918

申请日：2006-05-25

Applicant: Seiji Iseda

Inventor： Seiji Iseda

IPC: C23F1/00

CPC classification number: H01J37/32174 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32706 ,  H01J37/32935 ,  H01J2237/08

Abstract: A plasma processing apparatus includes a plasma reaction chamber in which a plasma is generated for processing. First and second electrodes are located in the chamber for generating the plasma. First and second RF power sources provide RF power to the first and second electrodes, respectively. The apparatus also includes first and second impedance matching circuits through which the RF power is respectively provided from the first and second RF power supplies to the first and second electrodes. A first plasma controller monitors plasma density and, in response thereto, adjusts the RF power supplied by the first RF power source to the first electrode to achieve a given plasma density. A second plasma controller monitors the ion energy of plasma species impinging on a semiconductor structure associated with the second electrode and, in response thereto, adjusts the RF power supplied by the second RF power source to the second electrode to achieve a given ion energy.

Abstract translation: 等离子体处理装置包括等离子体反应室，其中产生用于处理的等离子体。 第一和第二电极位于室中用于产生等离子体。 第一和第二RF电源分别向第一和第二电极提供RF功率。 该装置还包括第一和第二阻抗匹配电路，RF功率分别从第一和第二RF电源提供给第一和第二电极。 第一等离子体控制器监测等离子体密度，并且响应于此，将由第一RF电源提供的RF功率调整到第一电极以获得给定的等离子体密度。 第二等离子体控制器监测入射到与第二电极相关联的半导体结构上的等离子体物质的离子能量，并且响应于此，将由第二RF电源提供的RF功率调整到第二电极以获得给定的离子能量。

公开(公告)号：US20070023700A1

公开(公告)日：2007-02-01

申请号：US11474499

申请日：2006-06-26

Applicant: Junichi Koezuka ,  Hiroshi Ohki ,  Taku Hasegawa ,  Mami Goto

Inventor： Junichi Koezuka ,  Hiroshi Ohki ,  Taku Hasegawa ,  Mami Goto

IPC: H01J37/08

CPC classification number: H01J37/3171 ,  H01J27/024 ,  H01J37/302 ,  H01J37/32357 ,  H01J37/32412 ,  H01J37/3266 ,  H01J2237/006 ,  H01J2237/08 ,  H01L21/2236 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/66757 ,  H01L29/78621

Abstract: Doping with suppressed filament deterioration can be performed even in the case of doping in various conditions with an ion doping apparatus having a filament. After ion doping is completed, supply of a material gas is stopped and hydrogen or a rare gas is kept to be supplied. After that, current of the filament is decreased and correspondingly, filament temperature is decreased. Accordingly, in decreasing the filament temperature, the material gas around the filament has been replaced with hydrogen or a rare gas.

Abstract translation: 即使在具有灯丝的离子掺杂装置的各种条件下进行掺杂的情况下，也可以进行具有抑制的丝状劣化的掺杂。 离子掺杂完成后，停止供给原料气体，并保持供给氢气或稀有气体。 之后，灯丝的电流降低，灯丝温度降低。 因此，在降低灯丝温度时，灯丝周围的原料气体被氢气或稀有气体置换。

公开(公告)号：US20050248284A1

公开(公告)日：2005-11-10

申请号：US11061254

申请日：2005-02-18

Applicant: David Burtner ,  Scott Townsend ,  Daniel Siegfried ,  Viacheslav Zhurin

Inventor： David Burtner ,  Scott Townsend ,  Daniel Siegfried ,  Viacheslav Zhurin

IPC: H01J7/24

CPC classification number: H01J27/04 ,  H01J2237/002 ,  H01J2237/08

Abstract: An ion source is cooled using a cooling plate that is separate and independent of the anode. The cooling plate forms a coolant cavity through which a fluid coolant (e.g., liquid or gas) can flow to cool the anode. In such configurations, the magnet may be thermally protected by the cooling plate. A thermally conductive material in a thermal transfer interface component can enhance the cooling capacity of the cooling plate. Furthermore, the seperation of the cooling plate and the anode allows the cooling plate and cooling lines to be electrically isolated from the high voltage of the anode (e.g., using a thermally conductive, electrically insulating material). Combining these structures into an anode subassembly and magnet subassembly can also facilitate assembly and maintenance of the ion source, particularly as the anode is free of coolant lines, which can present some difficulty during maintenance.

Abstract translation: 使用独立于阳极的冷却板来冷却离子源。 冷却板形成冷却剂腔，流体冷却剂（例如，液体或气体）可通过其流动以冷却阳极。 在这种构造中，磁体可以被冷却板热保护。 传热接口部件中的导热材料可以提高冷却板的冷却能力。 此外，冷却板和阳极的分离允许冷却板和冷却管线与阳极的高电压电隔离（例如，使用导热的电绝缘材料）。 将这些结构组合到阳极子组件和磁体子组件中也可以促进离子源的组装和维护，特别是当阳极没有冷却剂管线时，这在维护过程中可能存在一些困难。

公开(公告)号：US06914386B2

公开(公告)日：2005-07-05

申请号：US10667875

申请日：2003-09-22

Applicant: Asher Pearl

Inventor： Asher Pearl

IPC: G01N27/62 ,  H01J27/02 ,  H01J27/22 ,  H01J37/08 ,  H01J49/10

CPC classification number: H01J37/08 ,  H01J27/02 ,  H01J27/26 ,  H01J2237/08 ,  H01J2237/3174 ,  H01J2237/31749

Abstract: The invention provides a system and method for controlling a source of liquid metal ions, the source comprises a tip a first electrode and a second electrode, the method includes the steps of: (i) maintaining the first electrode at a first voltage level range and maintaining the second voltage at a second voltage range, such as to extract metal ions formed on a tip of the source, during an active mode of operation of the source; and (ii) maintaining the first electrode at a third voltage level range and maintaining the second voltage at a fourth voltage level range, such as to substantially reduce an extraction of metal ions from the tip, during an idle mode of operation of the source. The third voltage level range and, alternatively or additionally, the fourth voltage level ranges does not include zero voltage level. The first voltage level range differs than the third voltage level range.

Abstract translation: 本发明提供了一种用于控制液态金属离子源的系统和方法，所述源包括尖端，第一电极和第二电极，所述方法包括以下步骤：（i）将所述第一电极保持在第一电压电平范围，以及 在所述源的主动操作模式期间将所述第二电压保持在第二电压范围，例如提取形成在所述源的尖端上的金属离子; 以及（ii）将所述第一电极保持在第三电压电平范围，并且将所述第二电压保持在第四电压电平范围，例如在所述电源的空闲运行模式期间基本上减少从所述尖端提取金属离​​子。 第三电压电平范围，或者或另外地，第四电压电平范围不包括零电压电平。 第一电压电平范围不同于第三电压电平范围。

公开(公告)号：US20040232353A1

公开(公告)日：2004-11-25

申请号：US10484647

申请日：2004-06-22

Inventor： David Norman Jamieson ,  Steven Prawer ,  Andrew Steven Dzurak ,  Robert Graham Clark ,  Changyi Yang

IPC: G21G005/00

CPC classification number: H01J37/08 ,  B82Y10/00 ,  B82Y40/00 ,  G06N10/00 ,  H01J37/20 ,  H01J37/244 ,  H01J37/3171 ,  H01J37/3174 ,  H01J2237/08 ,  H01J2237/20228 ,  H01J2237/20292 ,  H01J2237/31703 ,  H01J2237/31711 ,  H01J2237/31713 ,  H01J2237/31755 ,  H01J2237/31788 ,  H01L21/265 ,  H01L21/26513

Abstract: This invention concerns a method and system for single ion doping and machining by detecting the impact, penetration and stopping of single ions in a substrate. Such detection is essential for the successful implantation of a counted number of 31P ions into a semi-conductor substrate for construction of a Kane quantum computer. The invention particularly concerns the application of a potential across two electrodes on the surface of the substrate to create a field to separate and sweep out electron-hole pairs formed within the substrate. A detector is then used to detecting transient current in the electrodes, and so determine the arrival of a single ion in the substrate.

Abstract translation: 本发明涉及通过检测单个离子在衬底中的冲击，穿透和停止来进行单离子掺杂和机械加工的方法和系统。 这种检测对于将数量为31个P离子成功地注入到用于构建Kane量子计算机的半导体衬底中是必需的。 本发明特别涉及在衬底的表面上跨两个电极施加电位以产生分离和扫除在衬底内形成的电子 - 空穴对的场。 然后使用检测器来检测电极中的瞬态电流，并且因此确定单个离子到达衬底中。

公开(公告)号：US20040195524A1

公开(公告)日：2004-10-07

申请号：US10654437

申请日：2003-09-04

Inventor： Tetsuya Yamauchi

IPC: G21G005/00

CPC classification number: H01J37/3171 ,  H01J2237/08

Abstract: With the object of suppressing dispersion in the dose of ion implantation within a narrow range in a direction orthogonal to the scan direction of a substrate, an ion doping apparatus irradiates the substrate to-be-scanned with ion beams which are drawn out from multi-apertured electrodes (200 in FIG. 2) each being provided with a large number of electrode apertures (210). In electrode aperture groups null, . . . of the multi-apertured electrode (200), each including a plurality of electrode apertures (210), the individual electrode apertures (210) are arranged having positional shifts in the direction Y orthogonal to the scan direction X of the substrate so as to homogenize the doses of ion beam implantations into the substrate by the electrode aperture groups null, . . . .

Abstract translation: 为了在与基板的扫描方向正交的方向上的窄范围内抑制离子注入剂量的离散化的目的，离子掺杂装置用从多层离子注入的离子束照射待扫描的基板， 多孔电极（图2中的200）各自设置有大量的电极孔（210）。 在电极孔径组α。 。 。 的多孔电极（200），每个包括多个电极孔（210），各个电极孔（210）被布置成在与衬底的扫描方向X正交的方向Y上具有位置偏移，以使其均匀化 通过电极孔径组α离子束注入衬底的剂量。 。 。 。

公开(公告)号：US20020100876A1

公开(公告)日：2002-08-01

申请号：US10083564

申请日：2002-02-27

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Atsushi Murakoshi ,  Kyoichi Suguro ,  Katsuya Okumura

IPC: H01J027/00

CPC classification number: H01J27/08 ,  H01J27/02 ,  H01J2237/08 ,  H01J2237/31701

Abstract: According to the ion generation method, ion source material composed of an element of desired ions to be generated and I is heated so that vapor of the compound is generated, and the ions are generated by discharging the vapor. The iodide has no corrosiveness, and can be stably ionized. Further, it hardly reacts with oxygen or water and is safe.

Abstract translation: 根据离子产生方法，由要产生的所需离子的元素组成的离子源材料被加热，使得产生化合物的蒸汽，并且通过排出蒸气产生离子。 碘化物没有腐蚀性，可以稳定地电离。 此外，它几乎不与氧气或水反应并且是安全的。

公开(公告)号：US20020043630A1

公开(公告)日：2002-04-18

申请号：US09745174

申请日：2000-12-20

Inventor： Hamou Chakor

IPC: H01J037/08 ,  G21K005/10

CPC classification number: H01J27/22 ,  H01J2237/08 ,  H01J2237/31701 ,  H01L21/26513 ,  H01L21/2658

Abstract: A method of aluminum ion generation for an implantation in a semiconductor wafer, including using nitrogen trifluoride as a gas for ionizing a solid alumina element.

Abstract translation: 一种用于在半导体晶片中注入的铝离子生成方法，包括使用三氟化氮作为电离固体氧化铝元件的气体。

公开(公告)号：USRE37537E1

公开(公告)日：2002-02-05

申请号：US09660463

申请日：1997-12-05

Applicant: Regan W. Stinnett ,  John B. Greenly

Inventor： Regan W. Stinnett ,  John B. Greenly

IPC: G21K504

CPC classification number: C08J7/123 ,  B29C59/16 ,  B29C2035/0872 ,  C23C8/36 ,  C23C14/48 ,  H01J27/14 ,  H01J2237/08 ,  H01J2237/31701

Abstract: Methods and apparatus for thermally altering the near surface characteristics of a material are described. In particular, a repetitively pulsed ion beam system comprising a high energy pulsed power source and an ion beam generator are described which are capable of producing single species high voltage ion beams (0.25-2.5 MeV) at 1-1000 kW average power and over extended operating cycles (108). Irradiating materials with such high energy, repetitively pulsed ion beams can yield surface treatments including localized high temperature anneals to melting, both followed by rapid thermal quenching to ambient temperatures to achieve both novel and heretofore commercially unachievable physical characteristics in a near surface layer of material.

Abstract translation: 描述用于热改变材料的近表面特性的方法和装置。 特别地，描述了一种包括高能量脉冲电源和离子束发生器的重复脉冲离子束系统，其能够产生1-1000kW平均功率和超过扩展的单体高压离子束（0.25-2.5MeV） 操作循环（108）。 具有这种高能量，重复脉冲离子束的辐射材料可以产生表面处理，包括局部高温退火退火以进行熔融，随后快速热淬火至环境温度，以实现在近表面层材料中的新颖和迄今为止商业上无法实现的物理特性。