公开(公告)号：US5396076A

公开(公告)日：1995-03-07

申请号：US61308

申请日：1993-05-14

Applicant: Hideki Kimura

Inventor： Hideki Kimura

IPC: H01J27/02 ,  H01J37/05 ,  H01J37/09 ,  H01J37/317 ,  H01J49/26 ,  H01L21/265 ,  H01J37/00

CPC classification number: H01J37/09 ,  H01J37/05 ,  H01J2237/0213 ,  H01J2237/31701

Abstract: An ion implantation system composed of an ion source to generate ion beam, a mass analyzing region to select ions having a predetermined mass from the ion beam, an acceleration region to accelerate the ion beam selected, scanning regions to respectively scan the ion beam toward the X and Y directions, and protecting means located along the exposed surface of the inner wall of the mass analyzing region. The protecting means may be formed of a thin silicon plate, and located to cover the inner wall of the mass analyzing region. Preferably, the silicon plate is located at an upper and a lower portion of an exposed surface of the inner wall of the mass analyzing region. The protecting means may be formed of plurality of silicon plates that can be disassembled.

Abstract translation: 由离子源构成的离子注入系统，用于产生离子束，从离子束选择具有规定质量的离子的质量分析区域，加速选择的离子束的加速区域，扫描区域，分别扫描离子束朝向 X方向和Y方向，以及沿着质量分析区域的内壁的暴露表面设置的保护装置。 保护装置可以由薄硅板形成，并且被定位成覆盖质量分析区域的内壁。 优选地，硅板位于质量分析区域的内壁的暴露表面的上部和下部。 保护装置可以由能够拆卸的多个硅板形成。

公开(公告)号：US5306920A

公开(公告)日：1994-04-26

申请号：US980062

申请日：1992-11-23

Applicant: Jerry S. King ,  Carl E. D'Acosta ,  Craig L. Jasper ,  Dan A. Banks

Inventor： Jerry S. King ,  Carl E. D'Acosta ,  Craig L. Jasper ,  Dan A. Banks

IPC: H01J37/05 ,  H01J37/09

CPC classification number: H01J37/09 ,  H01J37/05 ,  H01J2237/0455 ,  H01J2237/31701

Abstract: An ion implantation apparatus including a resolving aperture-shutter assembly (31) placed in the ion beam path (18). The resolving aperture-shutter assembly includes a movable shutter (34) and a shutter housing surrounding the movable shutter (34). Selected ions in an ion beam path (18) pass through a hole (44) in movable shutter (34) when the movable shutter (34) is in a first position, and are blocked by the solid surfaces when the movable shutter (34) is in a second position. The enclosure (32, 33, 39) completely surrounds the movable shutter (34). The enclosure (32, 33, 39) includes a first aperture (42) aligned with the ion beam path (18) for allowing the selected ions to enter the enclosure and a second aperture (41) aligned with the ion beam path (18) for allowing the selected ions to exit the enclosure after passing through the hole (44) in the movable shutter.

Abstract translation: 一种离子注入装置，包括放置在离子束路径（18）中的分辨孔径光阑组件（31）。 分辨孔径光阑组件包括活动快门（34）和围绕活动快门（34）的快门壳体。 当活动快门（34）处于第一位置时，离子束路径（18）中的选定离子通过活动快门（34）中的孔（44），并且当活动快门（34）被固定时被固体表面阻挡， 处于第二位置。 外壳（32,33,39）完全包围活动活门（34）。 外壳（32,33,39）包括与离子束路径（18）对准的用于允许所选择的离子进入外壳的第一孔（42）和与离子束路径（18）对准的第二孔（41） 用于允许所选择的离子在通过可移动快门中的孔（44）之后离开外壳。

公开(公告)号：US5260579A

公开(公告)日：1993-11-09

申请号：US851400

申请日：1992-03-13

Applicant: Hiroshi Yasuda ,  Yasushi Takahashi ,  Kiichi Sakamoto ,  Akio Yamada ,  Yoshihisa Oae ,  Junichi Kai ,  Shunsuke Fueki ,  Kenichi Kawashima

Inventor： Hiroshi Yasuda ,  Yasushi Takahashi ,  Kiichi Sakamoto ,  Akio Yamada ,  Yoshihisa Oae ,  Junichi Kai ,  Shunsuke Fueki ,  Kenichi Kawashima

IPC: H01J37/09 ,  H01J37/317 ,  H01J37/302

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/09 ,  H01J37/3177 ,  H01J2237/0435

Abstract: A charged particle beam exposure system is directed to an exposure process of an electron beam for sequentially scanning an electron beam employing a blanking aperture array including a plurality of blanking apertures. The system facilitates re-focusing for compensation of focus error due to Coulumb effect and makes wiring the blanking aperture array easier. The system further allows exposure without an irradiation gap. The blanking aperture array 6 is formed with a plurality of said blanking apertures 62 arranged in a two-dimensional configuration. A control system 24 controls the blanking aperture array 62 to set the blanking aperture to the ON state where the charged particle beams pass through the blanking aperture and reach the object 19 to be exposed or the OFF state where the charged particle beams cannot reach the object 19 to be exposed. The other control system of the control means performs a control so that a plurality of said charged particle beams that have passed through different blanking apertures of said blanking aperture array overlaps and is irradiated a plurality of times onto the specified position or the peripheral position in the vicinity of the specified position of the object to be exposed to the charged particle beams.

公开(公告)号：US5153441A

公开(公告)日：1992-10-06

申请号：US617018

申请日：1990-11-21

Applicant: Koichi Moriizumi

Inventor： Koichi Moriizumi

IPC: H01L21/027 ,  H01J37/09 ,  H01J37/302

CPC classification number: H01J37/302 ,  H01J37/09 ,  H01J2237/0453 ,  H01J2237/0458 ,  H01J2237/3175

Abstract: An electron-beam exposure apparatus includes a sample stage for holding a sample, an electron gun, a first aperture for shaping an electron beam emitted from the electron gun, an electro-optical device for causing an electron beam formed by the first aperture to be deflected and to be converged on a sample held on the sample stage, a second aperture in which a plurality of block patterns are formed, for shaping an electron beam from an electro-optical device, and a movement device for moving the second aperture in order to cause an electron beam from the electro-optical device to strike a desired block pattern among a plurality of the block patterns.

Abstract translation: 电子束曝光装置包括用于保持样品的样品台，电子枪，用于使从电子枪发射的电子束成形的第一孔，用于使由第一孔形成的电子束的电光装置为 偏转并被会聚在保持在样品台上的样品上，形成多个块图案的第二孔，用于使来自电光装置的电子束成形，以及用于依次移动第二孔的移动装置 使得来自电光装置的电子束在多个块图案之间发生期望的块图案。

公开(公告)号：US5130552A

公开(公告)日：1992-07-14

申请号：US628795

申请日：1990-12-17

Applicant: Nicholas Bright ,  David R. Burgin ,  Timothy G. Morgan ,  Craig J. Lowrie ,  Hiroyuki Ito

Inventor： Nicholas Bright ,  David R. Burgin ,  Timothy G. Morgan ,  Craig J. Lowrie ,  Hiroyuki Ito

IPC: C23C14/48 ,  H01J37/05 ,  H01J37/09 ,  H01J37/317 ,  H01L21/265

CPC classification number: H01J37/05 ,  H01J37/09 ,  H01J37/3171 ,  H01J2237/0455 ,  H01J2237/31705

Abstract: An ion implantation system is modified to allow variation in the size of the aperture of the mass resolving system, thereby allowing more ions of one mass or ion of more than one mass, such as isotopes, to pass through said opening. Including all isotopes of the desired dopant ions to be collected increases beam current, and consequently the throughput of the implantation process, reduces contamination, and improves the dosage control.

公开(公告)号：US5118949A

公开(公告)日：1992-06-02

申请号：US603460

申请日：1990-10-25

Applicant: Franz J. Rappat ,  Wilhelm Scheffels ,  Ulrich Schwab

Inventor： Franz J. Rappat ,  Wilhelm Scheffels ,  Ulrich Schwab

IPC: G02B5/00 ,  H01J37/09 ,  H01J37/147 ,  H01J37/30

CPC classification number: G02B5/006 ,  H01J37/09 ,  H01J37/3002

Abstract: The invention relates to a process for the protection of a diaphragm during the generation of electron-beam pulses by means of alternately deflecting the electron beam onto the diaphragm and onto a processing site.In order to prevent damage to the diaphragm from the thermal effect of the electron beam, the electron beam is distributed with respect to space and/or time over an enlarged striking surface.

Abstract translation: 本发明涉及在电子束脉冲产生期间通过将电子束交替地偏转到膜片上并到达处理位置来保护膜片的方法。 为了防止由于电子束的热效应而使隔膜受到损坏，电子束相对于放大的打击面上的空间和/或时间分布。

公开(公告)号：US4789781A

公开(公告)日：1988-12-06

申请号：US026315

申请日：1987-03-16

Applicant: Masaki Kitagawa ,  Akira Ohtomo ,  Teruo Fujimoto

Inventor： Masaki Kitagawa ,  Akira Ohtomo ,  Teruo Fujimoto

IPC: H01J37/09 ,  H01J37/20 ,  H01J37/244 ,  G01N23/22

CPC classification number: H01J37/20 ,  H01J37/09

Abstract: A scanning electron microscope includes a heater coil which is arranged around a sample, an electron beam which is radiated when the sample is heated, and a secondary electron generated from the sample which is attracted to a photo multiplier. In this electron microscope, a shield plate is provided having an extracting hole for extracting the secondary electron outside of the heat coil in such a manner that the extracting hole is aligned with a light axis of the electron beam. The shield plate is connected to a power source which supplies a variable voltage so that a desired voltage can be applied to the shield plate so as to shield thermal electrons.

Abstract translation: 扫描电子显微镜包括设置在样品周围的加热器线圈，当加热样品时辐射的电子束以及被吸引到光电倍增器的样品产生的二次电子。 在该电子显微镜中，设置有屏蔽板，其具有提取孔，用于以使得提取孔与电子束的光轴对准的方式提取热线圈外部的二次电子。 屏蔽板连接到供应可变电压的电源，使得能够对屏蔽板施加期望的电压以屏蔽热电子。

公开(公告)号：US4445040A

公开(公告)日：1984-04-24

申请号：US514352

申请日：1983-07-18

Applicant: Teruo Iwasaki ,  Norio Saitou ,  Akira Yanagisawa

Inventor： Teruo Iwasaki ,  Norio Saitou ,  Akira Yanagisawa

IPC: H01J37/09 ,  H01L21/027 ,  A61K27/02

CPC classification number: H01J37/09

Abstract: A shaping aperture used in a charged particle forming system and provided with a slit for shaping the cross section of a charged beam emitted is disclosed in which at least two thin plates each provided with a through-hole for passing the charged particle beam therethrough are piled so as to form a shaping slit of a desired form by the through-holes.

Abstract translation: 公开了一种用于带电粒子形成系统并且设置有用于使发射的带电束的横截面成形的狭缝的成形孔，其中至少两个薄板均设有用于使带电粒子束穿过的通孔堆叠 以便通过通孔形成所需形状的成形狭缝。

公开(公告)号：US4434367A

公开(公告)日：1984-02-28

申请号：US287788

申请日：1981-07-28

Applicant: Akira Yonezawa

Inventor： Akira Yonezawa

IPC: H01J37/04 ,  H01J37/09 ,  H01J37/10 ,  H01J37/141 ,  H01J37/153 ,  H01J37/26

CPC classification number: H01J37/09 ,  H01J37/04 ,  H01J37/26

Abstract: An electron microscope comprises an objective lens, at least an intermediate lens and a projector lens arrayed in this order on an optical axis. A movable aperture element is disposed between the objective lens and the intermediate lens whose disposition and magnetic excitation are so selected that electron beam diverging from a crossover produced at a back focal plane of the objective lens is focused on a plane of the movable aperture element. In the case of an electron microscope comprising an objective lens, an objective aperture element, a selected area aperture element, at least an intermediate lens and a projector lens arrayed in this order along an optical axis, an additional lens is disposed between the objective aperture element and the selected area aperture element. Disposition and magnetic excitation of the additional lens are so selected that electron beam diverging from a crossover produced at a back focal plane of the objective lens is focused at a plane of the selected area aperture element. In both electron microscopes, divergence angle of the electron beam scattered by a specimen is restricted by the movable aperture element or the selected area aperture element.

Abstract translation: 电子显微镜包括在光轴上依次排列的至少中间透镜和投影透镜的物镜。 可移动孔径元件设置在物镜和中间透镜之间，其配置和磁激励是这样选择的，使得从在物镜的后焦面处产生的交叉点发散的电子束聚焦在可移动光圈元件的平面上。 在电子显微镜的情况下，包括物镜，物镜孔元件，选择的区域光圈元件，至少中间透镜和沿着光轴依次排列的投影透镜，附加透镜设置在物镜孔 元素和选择的区域光圈元件。 选择附加透镜的配置和磁激励，使得从物镜的后焦平面处产生的交叉发散的电子束聚焦在所选区域孔径元件的平面处。 在两个电子显微镜中，由样品散射的电子束的发散角受可动孔径元件或所选区域孔径元件的限制。

公开(公告)号：US4269653A

公开(公告)日：1981-05-26

申请号：US91037

申请日：1979-11-05

Applicant: Hirotsugu Wada ,  Toshiaki Shinozaki

Inventor： Hirotsugu Wada ,  Toshiaki Shinozaki

IPC: C23F1/04 ,  C25D1/08 ,  G02B5/00 ,  H01J37/09 ,  H01L21/027 ,  B23P15/16

CPC classification number: G03F1/20 ,  C23F1/04 ,  C25D1/08 ,  G02B5/005 ,  H01J37/09

Abstract: A method of manufacturing an aperture stop with a rectangular aperture for an electron beam exposure device, comprising the steps of: preparing a single-crystal silicon substrate with one side having a (100) face; providing a mask on said side of the substrate; selectively etching the substrate through the mask from said side to form a projecting portion of rectangular cross section by anisotropic etching; forming an aperture layer by covering said one side of the etched substrate with a high-melting-point metal having good electric conductivity, thereby surrounding said projecting portion; and forming in said aperture layer a rectangular aperture with a cross section corresponding to the cross section of said projecting portion by removing said substrate from the aperture layer.

Abstract translation: 一种制造具有用于电子束曝光装置的矩形孔径的孔径光阑的方法，包括以下步骤：制备具有（100）面的一侧的单晶硅衬底; 在所述基板的所述侧面上设置掩模; 通过所述侧面通过所述掩模选择性地蚀刻所述衬底，以通过各向异性蚀刻形成矩形横截面的突出部分; 通过用具有良好导电性的高熔点金属覆盖所述蚀刻的基板的所述一侧来形成开口层，从而包围所述突出部分; 以及通过从所述孔层移除所述基底，在所述孔层中形成具有对应于所述突出部分的横截面的横截面的矩形孔。