公开(公告)号：US09355751B2

公开(公告)日：2016-05-31

申请号：US14541238

申请日：2014-11-14

Applicant: MAPPER LITHOGRAPHY IP B.V.

Inventor： Willem Henk Urbanus ,  Marco Jan-Jaco Wieland

IPC: G21K1/02 ,  G21K5/04 ,  H01J37/24 ,  H01J37/30 ,  H01J37/317 ,  H01J37/02 ,  H01J37/16 ,  H01J37/065 ,  H01J37/12

CPC classification number: G21K1/02 ,  G21K5/04 ,  H01J37/026 ,  H01J37/065 ,  H01J37/12 ,  H01J37/16 ,  H01J37/24 ,  H01J37/3002 ,  H01J37/3007 ,  H01J37/3174 ,  H01J37/3175 ,  H01J37/3177 ,  H01J2237/002 ,  H01J2237/0216 ,  H01J2237/024 ,  H01J2237/032 ,  H01J2237/04 ,  H01J2237/1215 ,  H01J2237/16 ,  H01J2237/1825 ,  H01J2237/303 ,  H01J2237/30472

Abstract: The invention relates to an electrode stack (70) comprising stacked electrodes (71-80) for manipulating a charged particle beam along an optical axis (A). Each electrode comprises an electrode body with an aperture for the charged particle beam. The electrode bodies are mutually spaced and the electrode apertures are coaxially aligned along the optical axis. The electrode stack comprises electrically insulating spacing structures (89) between each pair of adjacent electrodes for positioning the electrodes (71-80) at predetermined mutual distances along the axial direction (Z). A first electrode and a second electrode each comprise an electrode body with one or more support portions (86), wherein each support portion is configured to accommodate at least one spacing structure (89). The electrode stack has at least one clamping member (91-91c) configured to hold the support portions (86) of the first and second electrodes, as well as the intermediate spacing structure (89) together.

Abstract translation: 本发明涉及一种电极堆叠（70），其包括用于沿光轴（A）操纵带电粒子束的堆叠电极（71-80）。 每个电极包括具有用于带电粒子束的孔的电极体。 电极体相互间隔开，并且电极孔沿光轴同轴对准。 电极堆叠包括在每对相邻电极之间的电绝缘间隔结构（89），用于将电极（71-80）沿着轴向方向（Z）定位在预定的相互距离处。 第一电极和第二电极各自包括具有一个或多个支撑部分（86）的电极主体，其中每个支撑部分构造成容纳至少一个间隔结构（89）。 电极堆叠具有至少一个构造成将第一和第二电极的支撑部分（86）以及中间间隔结构（89）保持在一起的夹紧构件（91-91c）。

公开(公告)号：US20160137427A1

公开(公告)日：2016-05-19

申请号：US14939910

申请日：2015-11-12

Applicant: MAPPER LITHOGRAPHY IP B.V.

Inventor： Michel Pieter Dansberg ,  Sjoerd Hesdahl ,  Jan Pieter Roelof Jongeneel

IPC: B65G47/90

CPC classification number: B65G47/90 ,  B25J9/0087 ,  B25J9/043 ,  G03F7/7075 ,  H01L21/67201 ,  H01L21/67225 ,  H01L21/67742 ,  H01L21/67766 ,  H01L21/68707

Abstract: The present invention relates to an apparatus and a method for transferring substrates into and from a vacuum chamber in a lithography apparatus. The load lock system comprises: a load lock chamber provided with an opening for allowing passage of a substrate in and out of the load lock chamber, and a transfer apparatus comprising a sub-frame at least partially arranged in the load lock chamber, an arm which is, with a proximal end thereof, connected to the sub-frame, and a substrate receiving unit which is connected to a distal end of the arm. The arm comprises at least three hinging arm parts, wherein a first and a second arm part are hingedly connected to the sub-frame with a proximal end thereof. A third arm part is hingedly connected to the distal ends of the first and second arm parts. The arm parts are arranged to form a four-bar linkage.

Abstract translation: 本发明涉及一种用于在光刻设备中将真空室转移到真空室中的装置和方法。 所述装载锁定系统包括：装载锁定室，其设置有用于允许衬底进入和离开所述装载锁定室的开口;以及传送装置，包括至少部分地布置在所述装载锁定室中的副框架，臂 其基端部连接到子框架，以及基板接收单元，其连接到臂的远端。 臂包括至少三个铰接臂部分，其中第一和第二臂部分与其近端铰接地连接到子框架。 第三臂部分铰接地连接到第一和第二臂部分的远端。 臂部件布置成形成四杆连杆。

公开(公告)号：US09224580B2

公开(公告)日：2015-12-29

申请号：US14348062

申请日：2012-09-28

Applicant: MAPPER LITHOGRAPHY IP B.V.

Inventor： Marc Smits ,  Chris Franciscus Jessica Lodewijk

IPC: H01J37/10 ,  H01J37/32 ,  H05H1/30 ,  H05H1/46 ,  H01J37/30

CPC classification number: H01J37/32082 ,  H01J37/3002 ,  H01J37/32862 ,  H05H1/30 ,  H05H1/46 ,  H05H2001/4667 ,  H05H2001/4675 ,  H05H2001/4682

Abstract: An arrangement for generating plasma, the arrangement comprising a primary plasma source (1) comprising a primary source chamber (15) and a first coil (4) for generating plasma in the primary source chamber, a secondary plasma source (25) comprising a secondary source chamber (16) and a second coil (26) for enhancing plasma generated by the primary plasma source and/or generating plasma in the secondary source chamber generating plasma in the primary source chamber, a hollow guiding body (11) arranged for guiding at least a portion of the plasma generated by the primary plasma source to the secondary plasma source, and an outlet (14) for emitting at least a portion of the plasma generated by the arrangement.

Abstract translation: 一种用于产生等离子体的装置，该装置包括主要等离子体源（1），其包括用于在初级源室中产生等离子体的初级源室（15）和第一线圈（4），次级等离子体源（25） 源室（16）和第二线圈（26），用于增强由初级等离子体源产生的等离子体和/或在次级源室中产生等离子体，在主源室中产生等离子体;空心引导体（11） 由初级等离子体源产生的等离子体的至少一部分等离子体源，以及用于发射由该装置产生的等离子体的至少一部分的出口（14）。

公开(公告)号：US20150268032A1

公开(公告)日：2015-09-24

申请号：US14716801

申请日：2015-05-19

Applicant: MAPPER LITHOGRAPHY IP B.V.

Inventor： Guido de Boer ,  Thomas Adrian Ooms ,  Niels Vergeer ,  Godefridus Cornelius Antonius Couweleers

IPC: G01B9/02

CPC classification number: G03F7/70775 ,  G01B9/02007 ,  G01B9/02015 ,  G03F7/70833 ,  G03F7/7085 ,  H01J2237/30438

Abstract: The invention relates to a differential interferometer module adapted for measuring a direction of displacement between a reference mirror and a measurement mirror. In an embodiment the differential interferometer module is adapted for emitting three reference beams towards a first mirror and three measurement beams towards a second mirror for determining a displacement between said first and second mirror. In a preferred embodiment the same module is adapted for measuring a relative rotation around two perpendicular axes as well. The present invention further relates to a lithography system comprising such a interferometer module and a method for measuring such a displacement and rotations.

Abstract translation: 本发明涉及一种用于测量参考反射镜和测量镜之间的位移方向的差分干涉仪模块。 在一个实施例中，差分干涉仪模块适于朝向第一反射镜发射三个参考光束，并且三个测量光束朝向第二反射镜发射以确定所述第一和第二反射镜之间的位移。 在优选实施例中，相同的模块也用于测量围绕两个垂直轴的相对旋转。 本发明还涉及包括这种干涉仪模块的光刻系统和用于测量这种位移和旋转的方法。

公开(公告)号：US20150243481A1

公开(公告)日：2015-08-27

申请号：US14626891

申请日：2015-02-19

Applicant: Mapper Lithography IP B.V.

Inventor： Marco Jan-Jaco Wieland

IPC: H01J37/317 ,  H01J37/04 ,  H01J37/30

CPC classification number: H01J37/3174 ,  H01J37/045 ,  H01J37/3007 ,  H01J37/3026 ,  H01J37/3177 ,  H01J2237/043 ,  H01J2237/0435 ,  H01J2237/31769

Abstract: The invention relates to a method for performing charged particle beam proximity effect correction, comprising the steps of: receiving a digital layout pattern to be patterned onto a target using one or more charged particle beams; selecting a base proximity function comprising a sum of an alpha and a beta proximity function, wherein said alpha proximity function models a short range proximity effect and said beta proximity function models a long range proximity effect, wherein a constant η is defined as a ratio between the beta proximity function and the alpha proximity function in said sum, with 0

Abstract translation: 本发明涉及一种用于执行带电粒子束邻近效应校正的方法，包括以下步骤：使用一个或多个带电粒子束将待图案化的数字布局图案接收到目标上; 选择包括α和β接近度函数之和的基本接近函数，其中所述α接近函数模拟短距离邻近效应，并且所述β接近函数模拟远距离邻近效应，其中恒定和近似函数 被定义为所述总和中β接近函数和α接近函数之间的比率，其中0 <＆eegr; <1; 确定对应于所述基本邻近效应函数的修改的接近度函数，其中所述α邻近函数已被Dirac delta函数代替，并且使用电子处理器执行所述数字布局图案与所述修改的接近函数的去卷积，以产生经校正的 布局模式。

公开(公告)号：US20150136994A1

公开(公告)日：2015-05-21

申请号：US14400561

申请日：2013-05-08

Applicant: MAPPER LITHOGRAPHY IP B.V.

Inventor： Teunis Van De Peut ,  Hendrik Den Boer

IPC: H01J37/317 ,  H01J37/30

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J37/243 ,  H01J37/3007 ,  H01J37/3177 ,  H01J2237/0264 ,  H01J2237/0437 ,  H01J2237/2485 ,  H01J2237/31754 ,  H01J2237/31774

Abstract: The invention relates to a modulation device for modulating charged particle beamlets in accordance with pattern data in a multi-beamlet charged particle lithography system. The device comprises a plate-like body, an array of beamlet deflectors, a plurality of power supply terminals (202-205) for supplying at least two different voltages, a plurality of control circuits, and a conductive slab (201) for supplying electrical power to one or more of the power supply terminals (202-205). The plate-like body is divided into an elongated beam area (51) and an elongated non-beam area (52) positioned with their long edges adjacent to each other. The beamlet deflectors are located in the beam area. The control circuits are located in non-beam area. The conductive slab is connected to the control circuits in the non-beam area. The conductive slab comprises a plurality of thin conductive plates (202-205).

Abstract translation: 本发明涉及一种用于根据多子束带电粒子光刻系统中的图案数据调制带电粒子子束的调制装置。 该装置包括板状主体，​​子束偏转器阵列，用于提供至少两个不同电压的多个电源端子（202-205），多个控制电路和用于提供电气的导电板（201） 一个或多个电源端子（202-205）的电力。 板状体被分成细长的射束区域（51）和长边相邻的细长非光束区域（52）。 子束偏转器位于光束区域中。 控制电路位于非光束区域。 导电板连接到非射束区域中的控制电路。 导电板包括多个薄导电板（202-205）。

公开(公告)号：US08987679B2

公开(公告)日：2015-03-24

申请号：US13722873

申请日：2012-12-20

Applicant: Mapper Lithography IP B.V.

Inventor： Johan Joost Koning ,  Stijn Willem Herman Steenbrink ,  Bart Schipper

IPC: H01J37/12 ,  H01J3/18

CPC classification number: H01J3/18 ,  H01J37/12 ,  H01J37/3007 ,  H01J37/3177 ,  H01J2237/1205 ,  H01J2237/15

Abstract: The present invention relates to a projection lens assembly module for directing a multitude of charged particle beamlets onto an image plane located in a downstream direction, and a method for assembling such a projection lens assembly. In particular the present invention discloses a modular projection lens assembly with enhanced structural integrity and/or increased placement precision of its most downstream electrode.

Abstract translation: 本发明涉及一种用于将多个带电粒子子束引导到位于下游方向的图像平面上的投影透镜组合模块，以及用于组装这种投影透镜组件的方法。 特别地，本发明公开了一种具有增强的结构完整性和/或其最下游电极的放置精度提高的模块化投影透镜组件。

公开(公告)号：US20150028223A1

公开(公告)日：2015-01-29

申请号：US14385802

申请日：2013-03-20

Applicant: MAPPER LITHOGRAPHY IP B.V.

Inventor： Pieter Kruit ,  Marc Smits

IPC: H01J37/317 ,  F15D1/02

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  F15D1/025 ,  G03F7/70925 ,  G21K2201/06 ,  H01J9/38 ,  H01J37/3007 ,  H01J37/3177 ,  H01J37/32862 ,  H01J2237/006 ,  H01J2237/022 ,  H01J2237/327 ,  Y10T137/2082 ,  Y10T137/87571

Abstract: The invention relates to an arrangement for transporting radicals. The arrangement includes a plasma generator and a guiding body. The plasma generator includes a chamber (2) in which a plasma may be formed. The chamber has an inlet (5) for receiving an input gas, and one or more outlets (6) for removal of at least one of the plasma and radicals created therein. The guiding body is hollow and is arranged for guiding radicals formed in the plasma towards an area or volume at which contaminant deposition is to be removed. The chamber inlet is coupled to a pressure device (40) for providing a pulsed pressure into the chamber so as to create a flow in the guiding body.

公开(公告)号：US20150014510A1

公开(公告)日：2015-01-15

申请号：US14344903

申请日：2012-09-17

Applicant: Mapper Lithography IP B.V.

Inventor： Alje Geert Dunning

IPC: F16F15/073 ,  F16F3/02

CPC classification number: F16F15/073 ,  F16F3/023 ,  F16F3/026 ,  F16F2228/063

Abstract: The invention relates to a support structure and support module, for instance for use in a lithography system, comprising a frame and a support for supporting a load, wherein said support is moveable relative to said frame, said support structure further comprising a force compensation spring assembly connecting said support to said frame for at least partially supporting said support and/or said load, wherein said force compensation spring assembly comprises a first spring having a negative stiffness characteristic over a predefined range of motion of said spring, and a second spring having a positive stiffness.

Abstract translation: 本发明涉及支撑结构和支撑模块，例如用于光刻系统，其包括框架和用于支撑负载的支撑件，其中所述支撑件可相对于所述框架移动，所述支撑结构还包括力补偿弹簧 将所述支撑件连接到所述框架上以至少部分地支撑所述支撑件和/或所述负载的组件，其中所述力补偿弹簧组件包括在所述弹簧的预定运动范围上具有负刚度特性的第一弹簧，以及具有 正劲。

公开(公告)号：US20150001423A1

公开(公告)日：2015-01-01

申请号：US14373893

申请日：2012-12-05

Applicant: Mapper Lithography IP B.V.

Inventor： Jan Andries Meijer ,  Paul IJmert Scheffers ,  Abdou Sarr

IPC: H01J37/252 ,  H01J37/30 ,  H01J37/317

CPC classification number: H01J37/252 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/09 ,  H01J37/244 ,  H01J37/3002 ,  H01J37/3005 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/2001 ,  H01J2237/24521 ,  H01J2237/2802 ,  H01J2237/30477 ,  H01J2237/31793

Abstract: The invention relates to a device for spot size measurement at wafer level in a multi charged particle beam lithography system. The device comprises a knife edge structure on top of a scintillating material, such a YAG material. The knife edge structure is arranged in a Si wafer which has a top plane at a sharp angle to a (1 1 0) plane of the Si. In an embodiment the angle is in the range from 2 to 4 degrees, preferably in the range from 2.9-3.1 degrees. The invention relates in addition to a method for manufacturing a device for spot size measurement at wafer level in a multi charged particle beam lithography system.

Abstract translation: 本发明涉及一种用于在多带电粒子束光刻系统中在晶片级进行点尺寸测量的装置。 该装置包括在闪烁材料的顶部上的刀刃结构，例如YAG材料。 刀刃结构布置在Si晶片中，其具有与Si的（110）平面成锐角的顶面。 在一个实施例中，角度在2至4度的范围内，优选在2.9-3.1度的范围内。 本发明还涉及一种用于在多带电粒子束光刻系统中制造用于晶片级的点尺寸测量的装置的方法。