Abstract:
In one embodiment, a method of forming a MEMS device includes providing a silicon wafer with a base layer and an intermediate layer above an upper surface of the base layer. A first electrode is defined in the intermediate layer and an oxide portion is provided above an upper surface of the intermediate layer. A cap layer is provided on an upper surface of the oxide portion and a second electrode is defined in the cap layer. The method further includes etching the oxide portion to form a cavity such that when the second electrode and the cavity are projected onto the intermediate layer, the projected second electrode encompasses the projected cavity.
Abstract:
Microelectromechanical systems (MEMS) pressure sensors having a leakage path are described. Provided implementations can comprise a MEMS pressure sensor system associated with a back cavity and a membrane that separates the back cavity and an ambient atmosphere. A pressure of the ambient atmosphere is determined based on a parameter associated with movement of the membrane.
Abstract:
Techniques are described herein that perform pressure sensing using pressure sensor(s) that include deformable pressure vessel(s). A pressure vessel is an object that has a cross section that defines a void. A deformable pressure vessel is a pressure vessel that has at least one curved portion that is configured to structurally deform (e.g., bend, shear, elongate, etc.) based on a pressure difference between a cavity pressure in a cavity in which at least a portion of the pressure vessel is suspended and a vessel pressure in the pressure vessel.
Abstract:
According to an embodiment, a MEMS includes a substrate; a substrate; a membrane arranged above the substrate; a first conductor with a first plane, the first conductor being connected to the membrane; and a second conductor with a second plane facing the first plane, the second conductor being arranged with a gap between the first conductor and the second conductor, wherein relative positions of the first conductor and the second conductor change in a direction in which an area of the first plane facing the second plane changes.
Abstract:
A MEMS device includes a fixed electrode and a movable electrode arranged isolated and spaced from the fixed electrode by a distance. The movable electrode is suspended against the fixed electrode by one or more spacers including an insulating material, wherein the movable electrode is laterally affixed to the one or more spacers.
Abstract:
A pressure sensor assembly includes a pressure sensor having a pressure sensing transducer connected to a plurality of electrode pins via a plurality of electrode pads disposed on the transducer, an inner casing configured to hold the pressure sensing transducer including a plurality of inner casing electrode pin channels having the electrode pins disposed therein. The pressure sensor further includes an outer casing holding the inner casing therein having a capsule header with a plurality of capsule header electrode pin channels defined therein which can include a ceramic seal disposed therein such that the capsule header electrode pin channels engage the electrode pins in an insulating sealed relationship. The outer casing further includes an isolator plate including an isolator plate fluid port defined therein and a pressure isolator disposed on the isolator plate and configured to deflect in response to a change in ambient pressure. The pressure sensor includes a pressure transmitting fluid disposed in the fluid volume.
Abstract:
The integration of pressure or inertial sensors into an integrated circuit fabrication and packaging flow is described. In one example, a diaphragm is formed by depositing a metal over a first dielectric layer. A second dielectric layer is formed over the diaphragm. A metal mesh layer is formed over the second dielectric. The first dielectric layer is etched under the diaphragm to form a cavity. The cavity is lined with a sealing layer. The cavity is covered to form a chamber adjoining the diaphragm, and the cover is sealed against the cavity.
Abstract:
A method includes forming a bump on a lower surface of an interposer. A first insulation layer is formed to cover the lower surface and bump. A trench is formed extending from the lower towards an upper surface of the interposer. A polymer supporting adhesive layer is formed to surround the bump and couples between the interposer and a semiconductor chip. The semiconductor chip has at least a sensing component and a conductive pad electrically connected to the sensing component, and the bump is connected to the conductive pad. A via is formed extending from the upper towards the lower surface. A second insulation layer is formed to cover the upper surface and the via. A redistribution layer is formed on the second insulation layer and in the via. A packaging layer is formed to cover the redistribution layer and has a second opening.
Abstract:
A sensor is made up of two substrates which are adhered together. A first substrate includes a pressure-sensitive micro-electrical-mechanical (MEMS) structure and a conductive contact structure that protrudes outwardly beyond a first face of the first substrate. A second substrate includes a complementary metal oxide semiconductor (CMOS) device and a receiving structure made up of sidewalls that meet a conductive surface which is recessed from a first face of the second substrate. A conductive bonding material physically adheres the conductive contact structure to the conductive surface and electrically couples the MEMS structure to the CMOS device.
Abstract:
A micromechanical structure includes a substrate and a functional structure arranged at the substrate. The functional structure has a functional region configured to deflect with respect to the substrate responsive to a force acting on the functional region. The functional structure includes a conductive base layer and a functional structure comprising a stiffening structure having a stiffening structure material arranged at the conductive base layer and only partially covering the conductive base layer at the functional region. The stiffening structure material includes a silicon material and at least a carbon material.