Method for implanting carbon nanotube
    121.
    发明申请
    Method for implanting carbon nanotube 审中-公开
    植入碳纳米管的方法

    公开(公告)号:US20070161133A1

    公开(公告)日:2007-07-12

    申请号:US11580295

    申请日:2006-10-13

    Abstract: The present invention relates to a method of implanting carbon nanotube (CNT), which is especially being adopted for forming CNTs in carbon nanotube field emitting displays (CNT-FEDs). The method comprises steps of: transferring a medium by an electromagnetic wave generating means for forming a media layer of adhesive and conductive ability; and exposing a CNT material to the electromagnetic wave generating means for implanting CNTs in a plurality of gate apertures by the light pressure of the electromagnetic wave generating means. By the aforesaid method, the problems troubling conventional CNT formation methods, such as the density of CNT formed thereby is not sufficient, the adhesion of the substrate used thereby is low, and the CNT formation requires to be performed under a high temperature ambient, etc., can be solved.

    Abstract translation: 本发明涉及一种特别用于在碳纳米管场发射显示器(CNT-FED)中形成CNT的碳纳米管(CNT)的注入方法。 该方法包括以下步骤:通过用于形成粘合剂和导电能力的介质层的电磁波产生装置传送介质; 以及将CNT材料暴露于所述电磁波产生装置,用于通过所述电磁波产生装置的光压将CNT注入到多个栅极孔中。 通过上述方法,常规CNT形成方法(如由此形成的CNT的密度)困扰的问题是不够的,因此使用的基板的粘附性低,并且CNT形成需要在高温环境等下进行 可以解决。

    APPARATUS FOR FORMING CARBON NANOTUBE FILM
    123.
    发明申请
    APPARATUS FOR FORMING CARBON NANOTUBE FILM 失效
    用于形成碳纳米管膜的装置

    公开(公告)号:US20070144431A1

    公开(公告)日:2007-06-28

    申请号:US11309431

    申请日:2006-08-04

    Applicant: MONG-TUNG LIN

    Inventor: MONG-TUNG LIN

    Abstract: An apparatus for forming a film of solution of carbon nanotubes includes a retaining member, an array of spray nozzles, and a supply tube. The spray nozzles are mounted on the retaining member. The spray nozzles being in communication with the supply tube. The apparatus can deposit a film of solution of carbon nanotubes having high thickness uniformity.

    Abstract translation: 用于形成碳纳米管溶液膜的装置包括保持构件,喷嘴阵列和供应管。 喷嘴安装在保持构件上。 喷嘴与供应管连通。 该装置可以沉积具有高厚度均匀性的碳纳米管溶液膜。

    Surface treatment method for material with surface microstructure
    124.
    发明申请
    Surface treatment method for material with surface microstructure 审中-公开
    具有表面微观结构的材料的表面处理方法

    公开(公告)号:US20070134437A1

    公开(公告)日:2007-06-14

    申请号:US11636575

    申请日:2006-12-11

    CPC classification number: H01J9/025 B82Y10/00 H01J2201/30469 H01L21/31058

    Abstract: A surface treatment method for material with surface microstructure includes the steps of subjecting the material surface to a dry-type free-radical oxidation treatment, and using a supercritical fluid to purge the surface of the material with surface microstructure, so as to remove oxidized and bond-broken small molecules from the material surface. The surface microstructure may include nanoholes or high-aspect-ratio microstructures. Small molecules or moistures in the nanoholes or the high-aspect-ratio microstructures are carried by the supercritical fluid away from the material with surface microstructure.

    Abstract translation: 具有表面微观结构的材料的表面处理方法包括以下步骤:对材料表面进行干式自由基氧化处理,并使用超临界流体以表面微结构吹扫材料的表面,以除去氧化和 从材料表面破碎的小分子。 表面微结构可以包括纳米孔或高纵横比微结构。 纳米孔中的小分子或湿度或高纵横比微结构由超临界流体远离具有表面微结构的材料承载。

    Field emission type backlight device
    125.
    发明授权
    Field emission type backlight device 失效
    场发射型背光装置

    公开(公告)号:US07230373B2

    公开(公告)日:2007-06-12

    申请号:US11048738

    申请日:2005-02-03

    Abstract: A field emission type backlight device can include upper and lower substrates facing each other with a gap between them, an anode electrode on a lower side of the upper substrate, a fluorescent layer on a lower side of the anode electrode, a lower gate electrode on an upper side of the lower substrate, an insulating layer on an upper side of the lower gate electrode, a cathode electrode on an upper side of the insulating layer, and a gate electrode that is provided on an upper side of the insulating layer and electrically connected to the lower gate electrode.

    Abstract translation: 场致发射型背光装置可以包括彼此面对的上下基板,上基板的下侧的阳极电极,阳极电极的下侧的荧光层, 下基板的上侧,下部栅电极的上侧的绝缘层,绝缘层的上侧的阴极,以及设置在绝缘层的上侧的电极,电绝缘层 连接到下栅电极。

    Electron-emitting source and method of manufacturing the same
    126.
    发明申请
    Electron-emitting source and method of manufacturing the same 失效
    电子发射源及其制造方法

    公开(公告)号:US20070114905A1

    公开(公告)日:2007-05-24

    申请号:US11413331

    申请日:2006-04-28

    CPC classification number: H01J9/025 B82Y10/00 H01J1/304 H01J2201/30469

    Abstract: A method of manufacturing an electron-emitting source includes first to third steps. In the first step, a cathode structure made of a metal containing any one of ion, nickel, cobalt, and chromium is heated to a first temperature in a reaction furnace to which a carbon source gas has been introduced, to form a plurality of first carbon nanotubes on the cathode structure by chemical vapor deposition. In the second step, the metal serving as a material of the cathode structure is deposited on at least either one of the cathode structure and the plurality of first carbon nanotubes, to form a catalyst metal layer. In the third step, the cathode structure including the catalyst metal layer is heated to a second temperature higher than the first temperature in the reaction furnace to which the carbon source gas has been introduced, to form a plurality of second carbon nanotubes which are thinner than the first carbon nanotubes on the catalyst metal layer by chemical vapor deposition. An electron-emitting source is also disclosed.

    Abstract translation: 制造电子发射源的方法包括第一至第三步骤。 在第一步骤中,将由含有离子,镍,钴和铬中的任一种的金属制成的阴极结构在引入碳源气体的反应炉中加热到第一温度,以形成多个第一 通过化学气相沉积在阴极结构上的碳纳米管。 在第二步骤中,作为阴极结构材料的金属沉积在阴极结构和多个第一碳纳米管中的至少一个上,以形成催化剂金属层。 在第三步骤中,将包含催化剂金属层的阴极结构加热至高于引入碳源气体的反应炉中的第一温度的第二温度,形成多个第二碳纳米管, 通过化学气相沉积在催化剂金属层上的第一个碳纳米管。 还公开了一种电子发射源。

    Multi-pixel electron microbeam irradiator systems and methods for selectively irradiating predetermined locations
    127.
    发明授权
    Multi-pixel electron microbeam irradiator systems and methods for selectively irradiating predetermined locations 有权
    多像素电子微束照射器系统和用于选择性地照射预定位置的方法

    公开(公告)号:US07220971B1

    公开(公告)日:2007-05-22

    申请号:US11320515

    申请日:2005-12-28

    Abstract: Multi-pixel electron microbeam irradiator systems and methods are provided with particular applicability for selectively irradiating predetermined cells or cell locations. A multi-pixel electron microbeam irradiator system can include a plurality of individually addressable electron field emitters sealed in a vacuum. The multi-pixel electron microbeam irradiator system can include an anode comprising one or more electron permeable portions corresponding to the plurality of electron field emitters. Further, the multi-pixel electron microbeam irradiator system can include a controller operable to individually control electron extraction from each of the electron field emitters for selectively irradiating predetermined locations such as cells or cell locations.

    Abstract translation: 提供了多像素电子微束照射器系统和方法,其特别适用于选择性地照射预定的细胞或细胞位置。 多像素电子微束照射器系统可以包括在真空中密封的多个可单独寻址的电子场发射器。 多像素电子微束照射器系统可以包括阳极,该阳极包括对应于多个电子场发射体的一个或多个电子透过部分。 此外,多像素电子微束照射器系统可以包括控制器,其可操作以单独地控制来自每个电子场发射器的电子提取,以选择性地照射诸如单元或单元位置的预定位置。

    Method for manufacturing electron-emitting device and method for manufacturing display having electron-emitting device
    128.
    发明申请
    Method for manufacturing electron-emitting device and method for manufacturing display having electron-emitting device 审中-公开
    用于制造电子发射器件的方法和用于制造具有电子发射器件的显示器的方法

    公开(公告)号:US20070111628A1

    公开(公告)日:2007-05-17

    申请号:US10555182

    申请日:2004-05-07

    Abstract: In removing a protection film, damage to an emitter material (carbon nanotubes) is decreased. A process for manufacturing an electron emitting device includes a first step of forming an emitter layer 10 containing carbon nanotubes 11 as a fibrous emitter material on a cathode electrode 5, a second step of forming an insulating layer 6 and a gate electrode 7 on the emitter layer 10 through a protection film 22, a third step of forming gate holes 8 in the insulating layer 6 and the gate electrode 7 above the emitter layer 10, and a fourth step of removing the protection film 22, which was exposed by forming the gate holes 8, with a weak acid etchant.

    Abstract translation: 在去除保护膜时,会损害发射体材料(碳纳米管)。 制造电子发射器件的方法包括:在阴极电极5上形成包含作为纤维发射体材料的碳纳米管11的发射极层10的第一步骤,在发射极上形成绝缘层6和栅电极7的第二步骤 层10通过保护膜22,在发射极层10上方的绝缘层6和栅电极7中形成栅极孔8的第三步骤,以及通过形成栅极而露出的保护膜22的第四步骤 孔8,弱酸蚀刻剂。

    Method for fabricating carbon nanotube-based field emission device
    130.
    发明申请
    Method for fabricating carbon nanotube-based field emission device 有权
    制造基于碳纳米管的场致发射器件的方法

    公开(公告)号:US20070103048A1

    公开(公告)日:2007-05-10

    申请号:US11490810

    申请日:2006-07-21

    CPC classification number: H01J9/025 B82Y10/00 H01J1/304 H01J2201/30469

    Abstract: An exemplary method for fabricating a carbon nanotube-based field emission device is provided. A substrate is provided. A catalyst layer is formed on the substrate. A carbon nanotube array is grown from the catalyst layer. The carbon nanotube array includes a root portion and an opposite top portion respectively being in contact with and away from the catalyst layer. A cathode base with an adhesive layer formed thereon is provided. The top portion of the carbon nanotube array is immersed into the adhesive layer. The adhesive layer is solidified to embed the immersed top portion into the solidified adhesive layer. The root portion of the carbon nanotube array is exposed.

    Abstract translation: 提供了一种用于制造基于碳纳米管的场致发射器件的示例性方法。 提供基板。 在基板上形成催化剂层。 从催化剂层生长碳纳米管阵列。 碳纳米管阵列包括分别与催化剂层接触并远离催化剂层的根部和相对的顶部。 提供其上形成有粘合剂层的阴极基体。 将碳纳米管阵列的顶部浸入粘合剂层中。 将粘合剂层固化以将浸入的顶部部分嵌入固化的粘合剂层中。 碳纳米管阵列的根部露出。

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