Abstract:
The present invention relates to ion sources comprising a cathode and a counter-cathode that are suitable for ion implanters. The present invention provides an ion source comprising a vacuum chamber; an arc chamber operable to generate and contain a plasma; a cathode operable to emit electrons into the arc chamber along an electron path; a counter-cathode disposed in the electron path; respective separate electrical connections from each of the cathode and the counter-cathode including respective vacuum feedthroughs to outside the vacuum chamber; and a voltage potential adjuster located outside the vacuum chamber that is connected at least to the counter-cathode via the vacuum feed-through and is operable to alter the potential of the counter-cathode relative to the cathode.
Abstract:
The invention provides methods and apparatus for generating helium ions. The methods involve providing a mixture of helium gas with a second gas in an ion source. The second gas has a lower ionization potential and larger molecules than that of helium. The helium gas is ionized by generating an arc discharge within the ion source. The presence of the second gas enhances the ionization of the helium gas. The increased helium ionization enables formation of helium ion beams having a high beam currents suitable for implantation.
Abstract:
An ion source for an ion implanter is provided, comprising: (i) a sublimator (52) having a cavity (66) for receiving a source material (68) to be sublimated and for sublimating the source material; (ii) a gas injector (104) for injecting gas into the cavity (66); (iii) an ionization chamber (58) for ionizing the sublimated source material, the ionization chamber located remotely from the sublimator; and (iv) a feed tube (62) for connecting the sublimator (52) to the ionization chamber (58). The gas injected into the cavity may be either helium or hydrogen, and is designed to improve the heat transferability between walls (64) of the sublimator (52) and the source material (68).
Abstract:
Ion source filaments, as well as methods and apparatus associated with the same are provided. The source filaments have a design that includes a relatively small surface area from which electrons are emitted (i.e., active portion) as compared to certain conventional source filaments. Suitable designs include filaments that have a V-shape or U-shape active portion, rather than a coiled active portion as in certain conventional source filaments. The source filaments of the present invention can increase the efficiency of ion generation and, in particular, the generation of multiply charged ionic species. The increased ion generation efficiency may enable formation of ion beams having relatively high beam currents suitable for implantation.
Abstract:
According to the ion generation method, ion source material composed of an element of desired ions to be generated and I is heated so that vapor of the compound is generated, and the ions are generated by discharging the vapor. The iodide has no corrosiveness, and can be stably ionized. Further, it hardly reacts with oxygen or water and is safe.
Abstract:
A discharge device for operation in a gas at a prescribed pressure includes a cathode having a plurality of micro hollows therein, and an anode spaced from the cathode. Each of the micro hollows has dimensions selected to produce a micro hollow discharge at the prescribed pressure. Preferably, each of the micro hollows has a cross-sectional dimension that is on the order of the mean free path of electrons in the gas. Electrical energy is coupled to the cathode and the anode at a voltage and current for producing micro hollow discharges in each of the micro hollows in the cathode. The discharge device may include a discharge chamber for maintaining the prescribed pressure. A dielectric layer may be disposed on the cathode when the spacing between the cathode and the anode is greater than about the mean free path of electrons in the gas. Applications of the discharge device include fluorescent lamps, excimer lamps, flat fluorescent light sources, miniature gas lasers, electron sources and ion sources.
Abstract:
An indirectly heated cathode ion source includes an extraction current sensor for sensing ion current extracted from the arc chamber and an ion source controller for controlling the filament power supply, the bias power supply and/or the arc power supply. The ion source controller may compare the sensed extraction current with a reference extraction current and determine an error value based on the difference between the sensed extraction current and the reference extraction current. The power supplies of the indirectly heated cathode ion source are controlled to minimize the error value, thus maintaining a substantially constant extraction current. The ion source controller utilizes a control algorithm, for example a closed feedback loop, to control the power supplies in response to the error value. In a first control algorithm, the bias current IB supplied by the bias power supply is varied so as to control the extraction current IE. Further according to the first control algorithm, the filament current IF and the arc voltage VA are maintained constant. According to a second control algorithm, the filament current IF is varied so as to control the extraction current IE. Further according to the second control algorithm, the bias current IB and the arc voltage VA are maintained constant.
Abstract:
An ion source (50) for an ion implanter is provided, comprising a remotely located vaporizer (51) and an ionizer (53) connected to the vaporizer by a feed tube (62). The vaporizer comprises a sublimator (52) for receiving a solid source material such as decaborane and sublimating (vaporizing) the decaborane. A heating mechanism is provided for heating the sublimator, and the feed tube connecting the sublimator to the ionizer, to maintain a suitable temperature for the vaporized decaborane. The ionizer (53) comprises a body (96) having an inlet (119) for receiving the vaporized decaborane; an ionization chamber (108) in which the vaporized decaborane may be ionized by an energy-emitting element (110) to create a plasma; and an exit aperture (126) for extracting an ion beam comprised of the plasma. A cooling mechanism (100, 104) is provided for lowering the temperature of walls (128) of the ionization chamber (108) (e.g., to below 350° C.) during ionization of the vaporized decaborane to prevent dissociation of vaporized decaborane molecules into atomic boron ions. In addition, the energy-emitting element is operated at a sufficiently low power level to minimize plasma density within the ionization chamber (108) to prevent additional dissociation of the vaporized decaborane molecules by the plasma itself.
Abstract:
An ion source (50) for an ion implanter is provided, comprising: (i) a sublimator (52) having a cavity (66) for receiving a source material (68) to be sublimated and for sublimating the source material; (ii) an ionization chamber (58) for ionizing the sublimated source material, the ionization chamber located remotely from the sublimator; (iii) a feed tube (62) for connecting the sublimator (52) to the ionization chamber (58); and (iv) a heating medium (70) for heating at least a portion of the sublimator (52) and the feed tube (62). A control mechanism is provided for controlling the temperature of the heating medium (70). The control mechanism comprises a heating element (80) for heating the heating medium (70), a pump (55) for circulating the heating medium, at least one thermocouple (92) for providing temperature feedback from the heating medium (70), and a controller (56) responsive to the temperature feedback to output a first control signal (94) to the heating element.