Abstract:
A semiconductor device 100 has such a structure that a semiconductor chip 110 is flip chip mounted on a wiring board 120. The wiring board 120 has a multilayer structure in which a plurality of wiring layers and a plurality of insulating layers are laminated and insulating layers are laminated as a first layer 122, a second layer 124, a third layer 126 and a fourth layer 128. A second electrode pad 132 is formed to be wider in a radial direction (a planar direction) than an outside diameter of a first electrode pad 130 on a boundary surface between a first insulating layer 121 and a second insulating layer 123. The second electrode pad 132 formed to be wider than the first electrode pad 130 is provided between the first electrode pad 130 and a via 134.
Abstract:
A land grid array (LGA) interposer structure, including an electrically insulating carrier plane, and at least one interposer mounted on a first surface of said carrier plane. The interposer possesses a hemi-toroidal configuration in transverse cross-section and is constituted of a dielectric elastomeric material. A plurality of electrically-conductive elements are arranged about the surface of the at least one hemi-toroidal interposer and extend radically inwardly and downwardly from an uppermost end thereof into electrical contact with at least one component located on an opposite side of the electrically insulating carrier plane. Provided is also a method of producing the land grid array interposer structure.
Abstract:
A land grid array (LGA) interposer structure, including an electrically insulating carrier plane, and at least one interposer mounted on a first surface of said carrier plane. The interposer possesses a hemi-toroidal configuration in transverse cross-section and is constituted of a dielectric elastomeric material. A plurality of electrically-conductive elements are arranged about the surface of the at least one hemi-toroidal interposer and extend radically inwardly and downwardly from an uppermost end thereof into electrical contact with at least one component located on an opposite side of the electrically insulating carrier plane.
Abstract:
A bump structure including at least one contact pad, at least one first polymer bump, at least one second polymer bump, and a conductive layer is provided. The contact pad is disposed on a substrate, and the first polymer bump is also disposed on the substrate. The second polymer bump is disposed on the substrate and is connected to the first polymer bump. The conductive layer covers the first polymer bump and electrically connects the contact pad.
Abstract:
A circuit board including a dielectric layer, a circuit layer, at least one conductive joint column, and a solder mask layer is provided. The circuit layer having at least one pad is in contact with the dielectric layer. The conductive joint column is disposed on the pad. The solder mask layer is disposed on the dielectric layer and covers the circuit layer. The solder mask layer is in contact with the conductive joint column, and the conductive joint column penetrates the solder mask layer. A height of the conductive joint column is larger than a thickness of the solder mask layer. The enhanced reliability of bonding between another component and the conductive joint column will be provided. Further, a method of fabricating a circuit board is also provided.
Abstract:
To make a metal feature, a non-plateable layer is applied to a workpiece surface and then patterned to form a first plating region and a first non-plating region. Then, metal is deposited on the workpiece to form a raised field region in said first plating region and a recessed region in said first non-plating region. Then, an accelerator film is applied globally on the workpiece. A portion of the accelerator film is selectively removed from the field region, and another portion of the accelerator film remains in the recessed acceleration region. Then, metal is deposited onto the workpiece, and the metal deposits at an accelerated rate in the acceleration region, resulting in a greater thickness of metal in the acceleration region compared to metal in the non-activated field region. Then, metal is completely removed from the field region, thereby forming the metal feature.
Abstract:
A QFN package with improved joint solder thickness for improved second level attachment fatigue life. The copper leadframe of a QFN chip carrier is provided with rounded protrusions in both the chip attach pad region and the surrounding lead regions before second level attachment. The rounded stand-off protrusions are formed from the copper itself of the copper of the leadframe. This may be achieved by punching dimples into one surface of the copper plate of the leadframe before plating to form protrusions on the opposing surface. This method of forming the rounded protrusions simplifies the process of forming stand-offs. The protrusions provide a structure that increases wetting area and allows the use of a larger quantity of solder for increased solder joint thickness and better die paddle solder joint area coverage. As a result of the increased solder joint thickness, second level fatigue life is significantly improved. As a result of the improved die paddle solder joint area coverage, improved thermal performance of the chip carrier is also significantly improved.
Abstract:
The present invention relates to a packaging substrate and a method for manufacturing the same. The packaging substrate includes: a substrate body, having a plurality of conductive pads on the surface thereof, wherein the top surfaces of the conductive pads have a concave each; a solder mask, disposed on the surface of the substrate body and having a plurality of openings to correspondingly expose the concaves of the conductive pads each; and a plurality of metal bumps, disposed correspondingly in the openings of the solder mask and over the concaves of the conductive pads. The present invention increases the joint surface area between the metal bumps and the conductive pads so as to inhibit the joint crack and improve the reliability of the conductive structure of the packaging substrate.
Abstract:
Methods and designs for increasing interconnect areas for interconnect bumps are disclosed. An interconnect bump may be formed on a substrate such that the interconnect bump extends beyond a contact pad onto a substrate. An interconnect bump may be formed on a larger contact pad, the bump having a large diameter.
Abstract:
An integrated circuit package system is provided including providing a substrate having a contact pad, forming a first conductor having a first melting point over the contact pad, forming a second conductor having a second melting point over the first conductor with the first melting point higher than the second melting point, and mounting a first device over the second conductor.