公开(公告)号：US20160071696A1

公开(公告)日：2016-03-10

申请号：US14787775

申请日：2014-05-05

Applicant: MAPPER LITHOGRAPHY IP B.V.

Inventor： Vincent Sylvester KUIPER ,  Erwin SLOT

IPC: H01J37/317 ,  H01J37/30

CPC classification number: H01J37/3177 ,  H01J37/09 ,  H01J37/3007 ,  H01J2237/0435 ,  H01J2237/0453 ,  H01J2237/3175 ,  H01J2237/31774

Abstract: A sub-beam aperture array for forming a plurality of sub-beams from one or more charged particle beams. The sub-beam aperture array comprises one or more beam areas, each beam area comprising a plurality of sub-beam apertures arranged in a non-regular hexagonal pattern, the sub-beam apertures arranged so that, when projected in a first direction onto a line parallel to a second direction, the sub-beam apertures are uniformly spaced along the line, and wherein the first direction is different from the second direction. The system further comprises a beamlet aperture array with a plurality of beamlet apertures arranged in one or more groups. The beamlet aperture array is arranged to receive the sub-beams and form a plurality of beamlets at the locations of the beamlet apertures of the beamlet array.

Abstract translation: 一种用于从一个或多个带电粒子束形成多个子光束的子光束孔径阵列。 子光束孔径阵列包括一个或多个光束区域，每个光束区域包括以非正六边形图案布置的多个子光束孔径，子光束孔径布置成使得当沿第一方向投影到 线平行于第二方向，子光束孔沿着线均匀间隔开，并且其中第一方向不同于第二方向。 该系统还包括具有以一组或多组布置的多个子束孔的子束孔阵列。 子束孔径阵列被布置成接收子束并在子束阵列的子束孔的位置处形成多个子束。

公开(公告)号：US09263234B2

公开(公告)日：2016-02-16

申请号：US14479648

申请日：2014-09-08

Applicant: Mapper Lithography IP B.V.

Inventor： Johan Joost Koning ,  David Johannes van den Bergen

IPC: H01J37/10 ,  H01J37/30 ,  G03F7/20 ,  H01J37/20 ,  H01J37/317 ,  B01J19/12

CPC classification number: H01J37/023 ,  B01J19/12 ,  G03F7/708 ,  G03F7/70825 ,  G03F7/70833 ,  G03F7/70891 ,  G03F7/709 ,  G03F7/70975 ,  H01J37/10 ,  H01J37/20 ,  H01J37/3007 ,  H01J37/3177

Abstract: The invention relates to a projection lens assembly for directing a beam toward a target. This assembly includes a lens support body (52) that spans a plane (P), and has a connection region (58) and a lateral edge (56). The lens support body is arranged for insertion into a frame (42) of a processing unit along an insertion direction (X) parallel with the plane (P). The projection lens assembly includes conduits (60-64) emanating from the connection region, and a conduit guiding body (70-81) for accommodating the conduits. The guiding body includes a first guiding portion (72) for guiding the conduits from the connection region, along the plane to a lateral region (B) beyond the lateral edge. The guiding body also includes a second guiding portion (78) for guiding the conduits from the lateral region (B) toward a tilted edge (79) of the conduit guiding body.

Abstract translation: 本发明涉及一种用于将光束导向目标的投影透镜组件。 该组件包括跨越平面（P）的透镜支撑体（52），并且具有连接区域（58）和侧边缘（56）。 透镜支撑体被布置成沿着与平面（P）平行的插入方向（X）插入到处理单元的框架（42）中。 投影透镜组件包括从连接区域发出的导管（60-64）和用于容纳导管的导管引导体（70-81）。 引导体包括用于将管道从连接区域沿着该平面引导到超过侧边缘的横向区域（B）的第一引导部分（72）。 引导体还包括用于将导管从侧向区域（B）引导到导管引导体的倾斜边缘（79）的第二引导部分（78）。

公开(公告)号：US09240306B2

公开(公告)日：2016-01-19

申请号：US14373893

申请日：2012-12-05

Applicant: Mapper Lithography IP B.V.

Inventor： Jan Andries Meijer ,  Paul IJmert Scheffers ,  Abdourahmane Ange Sarr

IPC: H01J37/00 ,  H01J37/252 ,  H01J37/09 ,  H01J37/244 ,  H01J37/30 ,  H01J37/317 ,  B82Y10/00 ,  B82Y40/00

CPC classification number: H01J37/252 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/09 ,  H01J37/244 ,  H01J37/3002 ,  H01J37/3005 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/2001 ,  H01J2237/24521 ,  H01J2237/2802 ,  H01J2237/30477 ,  H01J2237/31793

Abstract: The invention relates to a device for spot size measurement at wafer level in a multi charged particle beam lithography system. The device comprises a knife edge structure on top of a scintillating material, such a YAG material. The knife edge structure is arranged in a Si wafer which has a top plane at a sharp angle to a (1 1 0) plane of the Si. In an embodiment the angle is in the range from 2 to 4 degrees, preferably in the range from 2.9-3.1 degrees. The invention relates in addition to a method for manufacturing a device for spot size measurement at wafer level in a multi charged particle beam lithography system.

Abstract translation: 本发明涉及一种用于在多带电粒子束光刻系统中在晶片级进行点尺寸测量的装置。 该装置包括在闪烁材料的顶部上的刀刃结构，例如YAG材料。 刀刃结构布置在Si晶片中，其具有与Si的（110）平面成锐角的顶面。 在一个实施例中，角度在2至4度的范围内，优选在2.9-3.1度的范围内。 本发明还涉及一种用于在多带电粒子束光刻系统中制造用于晶片级的点尺寸测量的装置的方法。

公开(公告)号：US20160004173A1

公开(公告)日：2016-01-07

申请号：US14850997

申请日：2015-09-11

Applicant: Mapper Lithography IP B.V.

Inventor： Vincent Sylvester KUIPER ,  Erwin SLOT ,  Marcel Nicolaas Jacobus VAN KERVINCK ,  Guido DE BOER ,  Hendrik Jan DE JONG

IPC: G03F7/20

CPC classification number: G03F7/70733 ,  G03F7/7075 ,  H01L21/67178 ,  H01L21/67225 ,  H01L21/67745

Abstract: An apparatus for transferring a target, such as a substrate or a substrate support structure onto which a substrate has been clamped, from a substrate transfer system to a vacuum chamber of a lithography system. The apparatus comprises a load lock chamber for transferring the target into and out of the vacuum chamber. The load lock chamber comprises a first wall with a first passage providing access between a robot space and the interior of the load lock chamber, a second wall with a second passage providing access between the interior of the load lock chamber and the vacuum chamber, and plurality of handling robots for transferring the targets comprising: a first handling robot movable within the robot space to access the substrate transfer system and the first passage; and a second handling robot movable within the load lock chamber to access the first passage and the second passage.

Abstract translation: 一种用于将基板或基板支撑结构的目标（例如基板被夹紧到其上的基板）从基板传送系统传送到光刻系统的真空室的装置。 该装置包括用于将目标物输入和离开真空室的装载锁定室。 所述装载锁定室包括具有第一通道的第一壁，所述第一通道提供机器人空间与所述装载锁定室的内部之间的通路;第二壁，其具有提供在所述负载锁定室的内部与所述真空室之间的通路的第二通道，以及 用于传送所述目标的多个处理机器人包括：可在所述机器人空间内移动的第一处理机器人，以接近所述基板传送系统和所述第一通道; 以及第二处理机器人，其能够在所述加载锁定室内移动以接近所述第一通道和所述第二通道。

公开(公告)号：US09123507B2

公开(公告)日：2015-09-01

申请号：US14385802

申请日：2013-03-20

Applicant: MAPPER LITHOGRAPHY IP B.V.

Inventor： Pieter Kruit ,  Marc Smits

IPC: H01J37/02 ,  H01J37/317 ,  G03F7/20 ,  B82Y10/00 ,  B82Y40/00 ,  F15D1/02 ,  H01J9/38 ,  H01J37/32

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  F15D1/025 ,  G03F7/70925 ,  G21K2201/06 ,  H01J9/38 ,  H01J37/3007 ,  H01J37/3177 ,  H01J37/32862 ,  H01J2237/006 ,  H01J2237/022 ,  H01J2237/327 ,  Y10T137/2082 ,  Y10T137/87571

Abstract: The invention relates to an arrangement for transporting radicals. The arrangement includes a plasma generator and a guiding body. The plasma generator includes a chamber (2) in which a plasma may be formed. The chamber has an inlet (5) for receiving an input gas, and one or more outlets (6) for removal of at least one of the plasma and radicals created therein. The guiding body is hollow and is arranged for guiding radicals formed in the plasma towards an area or volume at which contaminant deposition is to be removed. The chamber inlet is coupled to a pressure device (40) for providing a pulsed pressure into the chamber so as to create a flow in the guiding body.

Abstract translation: 本发明涉及一种输送自由基的装置。 该装置包括等离子体发生器和引导体。 等离子体发生器包括可以形成等离子体的腔室（2）。 腔室具有用于接收输入气体的入口（5）和用于去除其中产生的至少一种等离子体和自由基的一个或多个出口（6）。 引导体是中空的，并且被布置成用于将形成在等离子体中的自由基引导到要去除污染物沉积的区域或体积。 腔室入口联接到压力装置（40），用于向腔室提供脉冲压力，以便在引导体中产生流动。

公开(公告)号：US20150187541A1

公开(公告)日：2015-07-02

申请号：US14578525

申请日：2014-12-22

Applicant: MAPPER LITHOGRAPHY IP B.V

Inventor： Laura DINU-GÜRTLER ,  Eric Petrus HOGERVORST

IPC: H01J37/317 ,  H01J1/15 ,  H01J37/075

CPC classification number: H01J37/3174 ,  G03F7/70058 ,  H01J1/15 ,  H01J1/28 ,  H01J3/027 ,  H01J3/029 ,  H01J37/075 ,  H01J37/3177 ,  H01J2229/481 ,  H01J2237/061

Abstract: The invention relates to a cathode arrangement comprising: a thermionic cathode comprising an emission portion provided with an emission surface for emitting electrons, and a reservoir for holding a material, wherein the material, when heated, releases work function lowering particles that diffuse towards the emission portion and emanate at the emission surface at a first evaporation rate; a focusing electrode comprising a focusing surface for focusing the electrons emitted from the emission surface of the cathode; and an adjustable heat source configured for keeping the focusing surface at a temperature at which accumulation of work function lowering particles on the focusing surface is prevented.

Abstract translation: 本发明涉及一种阴极装置，其包括：热离子阴极，其包括具有用于发射电子的发射表面的发射部分和用于保持材料的储存器，其中所述材料在被加热时释放向发射扩散的功函数降低颗粒 以第一蒸发速率发射在发射表面; 聚焦电极，其包括用于聚焦从阴极的发射表面发射的电子的聚焦表面; 以及可调节热源，其被配置为将聚焦表面保持在防止在聚焦表面上降低颗粒的功函数积累的温度。

公开(公告)号：US20150155136A1

公开(公告)日：2015-06-04

申请号：US14400815

申请日：2013-05-14

Applicant: MAPPER LITHOGRAPHY IP B.V.

Inventor： Paul IJmert Scheffers

IPC: H01J37/304 ,  G01B11/14 ,  H01J37/317

CPC classification number: H01J37/3045 ,  B82Y10/00 ,  B82Y40/00 ,  G01B11/14 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/065 ,  H01J2237/24514 ,  H01J2237/24578 ,  H01J2237/3175 ,  H01J2237/31774

Abstract: The invention relates to a method for determining a beamlet position in a charged particle multi-beamlet exposure apparatus. The apparatus is provided with a sensor comprising a conversion element for converting charged particle energy into light and a light sensitive detector. The conversion element is provided with a sensor surface area provided with a 2D-pattern of beamlet blocking and non-blocking regions. The method comprises taking a plurality of measurements and determining the position of the beamlet with respect to the 2D-pattern on the basis of a 2D-image created by means of the measurements. Each measurement comprises exposing a feature onto a portion of the 2D-pattern with a beamlet, wherein the feature position differs for each measurement, receiving light transmitted through the non-blocking regions, converting the received light into a light intensity value, and assigning the light intensity value to the position at which the measurement was taken.

Abstract translation: 本发明涉及一种用于确定带电粒子多子束曝光装置中的子束位置的方法。 该装置设置有传感器，其包括用于将带电粒子能量转换成光的转换元件和光敏检测器。 转换元件设置有设置有子束阻挡和非阻挡区域的2D图案的传感器表面区域。 该方法包括采取多个测量并基于通过测量产生的2D图像来确定子束相对于2D图案的位置。 每个测量包括用子束将特征曝光到2D图案的一部分上，其中对于每个测量，特征位置不同，接收透过非阻挡区域的光，将接收的光转换成光强度值， 光强值到测量位置。

公开(公告)号：US20150109598A1

公开(公告)日：2015-04-23

申请号：US14383570

申请日：2013-03-08

Applicant: MAPPER LITHOGRAPHY IP B.V.

Inventor： Niels Vergeer

IPC: G03F9/00

CPC classification number: G03F9/00 ,  B82Y10/00 ,  B82Y40/00 ,  G03F9/7088 ,  H01J37/3045 ,  H01J37/3177 ,  H01J2237/30438

Abstract: A method for operating a target processing system for processing a target (23) on a chuck (13), the method comprising providing at least a first chuck position mark (27) and a second chuck position mark (28) on the chuck (13); providing an alignment sensing system (17) arranged for detecting the first and second chuck position marks (27, 28), the alignment sensing system (17) comprising at least a first alignment sensor (61) and a second alignment sensor (62); moving the chuck (13) to a first position based on at least one measurement of the alignment sensing system (17); and measuring at least one value related to the first position of the chuck.

Abstract translation: 一种用于操作用于在卡盘（13）上处理目标（23）的目标处理系统的方法，所述方法包括在卡盘（13）上至少提供第一卡盘位置标记（27）和第二卡盘位置标记（28） ）; 提供布置成用于检测第一和第二卡盘位置标记（27,28）的对准检测系统（17），所述对准检测系统（17）至少包括第一对准传感器（61）和第二对准传感器（62）; 基于对准检测系统（17）的至少一个测量将卡盘（13）移动到第一位置; 并且测量与卡盘的第一位置相关的至少一个值。

公开(公告)号：US20150060701A1

公开(公告)日：2015-03-05

申请号：US14345656

申请日：2012-09-19

Applicant: MAPPER LITHOGRAPHY IP B.V.

Inventor： Marc Smits

IPC: G01N23/22 ,  G01N33/00 ,  H01J37/317

CPC classification number: G01N23/22 ,  B82Y10/00 ,  B82Y40/00 ,  G01N33/0004 ,  G03F7/70608 ,  G03F7/70916 ,  H01J37/304 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/022 ,  H01J2237/31796

Abstract: A lithography system (10) comprising a radiation projection system (20) for projecting radiation onto a substrate, a substrate transport system (30) for loading and positioning the substrate to be processed in the path of the projected radiation, a control system (40) for controlling the substrate transport system to move the substrate, and a resist characterization system (50) arranged for determining whether a specific type of resist is suitable to be exposed by radiation within the lithography system. The resist characterization system (50) may be arranged for exposing the resist on a surface of the substrate with one or more radiation beams, measuring a mass distribution of molecular fragments emitted from the resist, predicting a growth rate of deposited molecular fragments on the basis of a growth rate model and the measured mass distribution, and comparing the expected growth rate with a predetermined threshold growth rate.

Abstract translation: 一种光刻系统（10），包括用于将辐射投射到基板上的辐射投影系统（20），用于在投影辐射的路径中加载和定位待处理基板的基板输送系统（30），控制系统 ），用于控制衬底传输系统以移动衬底;以及抗蚀剂表征系统（50），其布置成用于确定特定类型的抗蚀剂是否适于通过光刻系统内的辐射曝光。 抗蚀剂表征系统（50）可以布置成用一个或多个辐射束将抗蚀剂暴露在衬底的表面上，测量从抗蚀剂发射的分子片段的质量分布，从而预测基于沉积的分子片段的生长速率 的增长率模型和测量的质量分布，并将预期增长率与预定的阈值增长率进行比较。

公开(公告)号：US20140185028A1

公开(公告)日：2014-07-03

申请号：US14135372

申请日：2013-12-19

Applicant: Mapper Lithography IP B.V.

Inventor： Guido DE BOER ,  Michel Pieter DANSBERG ,  Pieter KRUIT

IPC: G03F7/20

CPC classification number: G03F7/70691 ,  G03F7/707 ,  G03F7/70783 ,  G03F7/70875

Abstract: The invention relates to a lithography system, for example for projecting an image or an image pattern on to a target (1) such as a wafer, said target being included in said system by means of a target table (2), clamping means being present for clamping said target on said table. Said clamping means comprises a layer of stationary liquid (3), included at such thickness between target and target table that, provided the material of the liquid (C) and of the respective contacting faces (A, B) of the target (1) and target table (2), a pressure drop (PCap) arises.

Abstract translation: 本发明涉及一种光刻系统，例如用于将图像或图像图案投射到诸如晶片的目标（1）上，所述目标通过目标台（2）包括在所述系统中，夹紧装置是 用于将所述目标夹持在所述台上。 所述夹紧装置包括固定液体层（3），其包括在目标台和目标台之间的这样的厚度上，其设置有液体（C）的材料和目标（1）的相应的接触面（A，B） 和目标表（2），出现压降（PCap）。