公开(公告)号：US09530606B2

公开(公告)日：2016-12-27

申请号：US14666871

申请日：2015-03-24

Applicant: NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY

Inventor： Jabez McClelland ,  Truman Wilson

IPC: H01J27/02 ,  G21K1/00 ,  H01J37/04 ,  H01J37/08 ,  H01J37/22

CPC classification number: H01J27/022 ,  H01J37/04 ,  H01J37/08 ,  H01J37/22 ,  H01J2237/047 ,  H01J2237/26 ,  H01J2237/30

Abstract: An articles includes: an ion source configured to provide a first ion beam that has a first brightness; and a cooler configured to receive the first ion beam and to produce a second ion beam from the first ion beam, the second ion beam including a second brightness that is greater than the first brightness. A process for cooling includes receiving a first ion beam that includes a first brightness in a cooler, and the cooler includes a first mirror and a second mirror disposed opposingly to the first mirror; receiving a first laser beam in the cooler; receiving a second laser beam in the cooler; transmitting the first laser beam and the second laser beam through the first ion beam to decrease an emittance of the first ion beam; reflecting the first laser beam from the first mirror and the second laser beam from the second mirror; and transmitting, after being reflected, the first laser beam and the second laser beam through the first ion beam to cool the first ion beam and to decrease the emittance of the first ion beam to produce a second ion beam that includes a second brightness that is greater than the first brightness.

Abstract translation: 一种物品包括：离子源，被配置为提供具有第一亮度的第一离子束; 以及冷却器，被配置为接收所述第一离子束并且从所述第一离子束产生第二离子束，所述第二离子束包括大于所述第一亮度的第二亮度。 一种冷却方法包括在冷却器中接收包括第一亮度的第一离子束，并且所述冷却器包括与第一反射镜相对设置的第一反射镜和第二反射镜; 在冷却器中接收第一激光束; 在所述冷却器中接收第二激光束; 通过所述第一离子束透射所述第一激光束和所述第二激光束以降低所述第一离子束的发射率; 反射来自第一反射镜的第一激光束和来自第二反射镜的第二激光束; 并且在第一激光束和第二激光束被反射之后通过第一离子束透射以冷却第一离子束并降低第一离子束的发射率以产生第二离子束，该第二离子束包括第二离子束， 大于第一亮度。

公开(公告)号：US09450673B2

公开(公告)日：2016-09-20

申请号：US14605977

申请日：2015-01-26

Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGY ,  THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF COMMERCE, THE NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY

Inventor： Kerry Vahala ,  Scott Diddams ,  Jiang Li ,  Xu Yi ,  Hansuek Lee

IPC: H04B10/2507 ,  H04B10/2575 ,  H04B10/25 ,  H04B10/50 ,  H04L7/00 ,  H03L7/08 ,  H03L7/16

CPC classification number: H04B10/2507 ,  H03B17/00 ,  H03L7/08 ,  H03L7/16 ,  H04B10/2504 ,  H04B10/2575 ,  H04B10/503 ,  H04B2210/006 ,  H04L7/0075 ,  H04L7/0091

Abstract: A microwave-frequency source at frequency fM comprises: a dual optical-frequency reference source, an electro-optic sideband generator, an optical bandpass filter, an optical detector, a reference oscillator, an electrical circuit, and a voltage-controlled oscillator (VCO). The sideband generator modulates dual optical reference signals at v2 and v1 to generate sideband signals at v1±n1fM and v2±n2fM. The bandpass filter transmits sideband signals at v1+N1fM and v2−N2fM. The optical detector generates a beat note at (v2−N2fM)−(v1+N1fM). The beat note and a reference oscillator signal are processed by the circuit to generate a loop-filtered error signal to input to the VCO. Output of the VCO at fM drives the sideband generator and forms the microwave-frequency output signal. The resultant frequency division results in reduced phase noise on the microwave-frequency signal.

Abstract translation: 频率fM的微波频率源包括：双光频参考源，电光边带发生器，光带通滤波器，光检测器，参考振荡器，电路和压控振荡器（VCO ）。 边带发生器在v2和v1处调制双光参考信号，以在v1±n1fM和v2±n2fM产生边带信号。 带通滤波器发送v1 + N1fM和v2-N2fM的边带信号。 光学检测器在（v2-N2fM） - （v1 + N1fM）处产生节拍。 拍音和参考振荡器信号由电路处理以产生环路滤波的误差信号以输入到VCO。 在fM处的VCO的输出驱动边带发生器并形成微波频率输出信号。 所得到的分频导致微波频率信号上的相位噪声减小。

公开(公告)号：US09431211B2

公开(公告)日：2016-08-30

申请号：US14827666

申请日：2015-08-17

Applicant: NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY

Inventor： Renu Sharma ,  Stefano Mazzucco

IPC: H01J37/28 ,  G01N21/64 ,  H01J37/22 ,  H01J37/20 ,  H01J37/26

CPC classification number: H01J37/226 ,  H01J37/20 ,  H01J37/244 ,  H01J37/261 ,  H01J2237/063 ,  H01J2237/2007 ,  H01J2237/2445 ,  H01J2237/2602

Abstract: A hybrid electron microscope includes: an electron source to emit an electron beam; a parabolic mirror including: a reflective surface; and an aperture to communicate the electron beam through the parabolic mirror; and a sample holder interposed between the electron source and the parabolic mirror such that the reflective surface of the parabolic mirror faces the electron source and the sample holder. A process for acquiring hybrid electron microscopy data includes: disposing a parabolic mirror in a chamber, the parabolic mirror including: a reflective surface; and an aperture to communicate an electron beam through the parabolic mirror; disposing a sample on a sample holder; interposing a sample holder between an electron source and the parabolic mirror such that the reflective surface of the parabolic mirror faces the electron source and the sample holder; producing the electron beam from the electron source; subjecting the sample to the electron beam; communicating the electron beam through the sample and the aperture of the parabolic mirror; and collecting imaging data of the sample in response to the subjecting the sample to the electron beam to acquire the hybrid electron microscopy data.

Abstract translation: 混合电子显微镜包括：发射电子束的电子源; 抛物面镜包括：反射面; 以及使电子束通过抛物面反射镜传播的孔; 以及插入在电子源和抛物面反射镜之间的样品保持架，使得抛物面镜的反射表面面向电子源和样品保持器。 一种用于获取混合电子显微镜数据的方法包括：在室中设置抛物面镜，所述抛物面镜包括：反射表面; 以及用于将电子束通过抛物面反射镜传播的孔; 将样品放在样品架上; 在电子源和抛物面反射镜之间插入样品架，使得抛物面镜的反射面朝向电子源和样品架; 从电子源产生电子束; 使样品经受电子束; 将电子束通过样品和抛物面镜的孔传播; 以及响应于将样品经受电子束来采集样品的成像数据以获得混合电子显微镜数据。

公开(公告)号：US09325729B2

公开(公告)日：2016-04-26

申请号：US14324966

申请日：2014-07-07

Applicant: George Mason Research Foundation, Inc. ,  The United States of America, as represented by the Secretary of Commerce, The National Institute of Standards and Technology

Inventor： Sushil Jajodia ,  Lingyu Wang ,  Steven Noel ,  Anoop Singhal

IPC: H04L29/06 ,  G06F21/57

CPC classification number: H04L63/1433 ,  G06F21/577

Abstract: Systems and methods for determining a safety level of a network vulnerable to attack from at least one origin to at least one target are described. Machines, components, and vulnerabilities in a network may be associated to one another. Degrees of similarity among the vulnerabilities may be determined and subsets of vulnerabilities may be grouped based on their determined degrees of similarity to one another. This data may be used to generate an attack graph describing exploitation of vulnerabilities and grouped vulnerabilities and defining vulnerability exploit condition relationships between at least one origin and at least one target. The attack graph may be analyzed using a k-zero day metric function to determine a safety level.

Abstract translation: 描述了用于确定易受从至少一个起点到至少一个目标的攻击的网络的安全级别的系统和方法。 网络中的机器，组件和漏洞可能会相互关联。 可以确定漏洞之间的相似度，并且可以基于它们确定的彼此相似度来分组漏洞子集。 该数据可用于生成描述利用漏洞和分组漏洞的攻击图，并定义至少一个起始点和至少一个目标之间的漏洞利用条件关系。 可以使用k-zero日度量函数来分析攻击图，以确定安全级别。

公开(公告)号：US20160068940A1

公开(公告)日：2016-03-10

申请号：US14940199

申请日：2015-11-13

Applicant: TONY YING ,  NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY

Inventor： ERIC A. LASS ,  MARK R. STOUDT ,  CARELYN CAMPBELL ,  TONY YING

IPC: C22F1/08 ,  B22D21/02 ,  C22C9/04

CPC classification number: C22F1/08 ,  C22C1/02 ,  C22C9/04

Abstract: A primary alloy includes: nickel; copper; zinc; an electrical conductivity from 5.2% International Annealed Copper Standard (IACS) to 5.6% IACS measured in accordance with ASTM E1004-09 (2009); and a disordered crystalline phase wherein atoms of the nickel, cooper, and zinc are randomly arranged in the disordered crystalline phase at room temperature in a post-annealed state. A process for making the primary alloy includes heating a secondary alloy to a first temperature that is greater than or equal to an annealing temperature to form an annealing alloy, the secondary alloy including a secondary phase; and quenching, by cooling the annealing alloy from the first temperature to a second temperature that is less than the annealing temperature, under a condition effective to form the primary alloy including the disordered crystalline phase, wherein the disordered crystalline phase is different than the secondary phase of the secondary alloy.

Abstract translation: 主要合金包括：镍; 铜; 锌 根据ASTM E1004-09（2009）测量的电导率为5.2％国际退火铜标准（IACS）至5.6％IACS; 以及无规结晶相，其中镍，铜和锌的原子在后退火状态下在室温下随机排列在无序结晶相中。 制造该初级合金的方法包括将二次合金加热到大于或等于退火温度的第一温度以形成退火合金，所述二次合金包括第二相; 在有效形成包含无序结晶相的一次合金的条件下，将退火合金从第一温度冷却至小于退火温度的第二温度，淬火，其中无序结晶相不同于第二相 的二次合金。

公开(公告)号：US20150214050A1

公开(公告)日：2015-07-30

申请号：US14679249

申请日：2015-04-06

Applicant: MATTHEW D. BRUBAKER ,  WILLIAM M. OLD ,  NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY

Inventor： Kristine A. Bertness ,  Matthew D. Brubaker ,  William M. Old

IPC: H01L21/02

CPC classification number: H01L21/02603 ,  B82Y10/00 ,  B82Y35/00 ,  B82Y40/00 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02642 ,  H01L29/0665

Abstract: A nanowire article includes a substrate; a plurality of nanowires disposed on the substrate, the nanowires comprising a semiconductor nitride, the semiconductor comprising an element selected from group 3 of the periodic table; and a superlattice layer interposed between the substrate and the plurality of gallium nitride nanowires. A process for producing a nanowire article includes disposing a superlattice layer on a substrate; disposing a first buffer layer on the superlattice layer; contacting the first buffer layer with a precursor; and forming a plurality of nanowires from the precursor on the first buffer layer to form the nanowire article, the nanowires comprising a semiconductor nitride, the semiconductor comprising an element selected from group 3 of the periodic table. A process for producing a nanowire article includes nitrogenating a substrate to form a nitrogenated layer on the substrate; contacting the nitrogenated layer with a precursor; and forming a plurality of gallium nitride nanowires from the precursor on the nitrogenated layer to form the nanowire article in an absence of a catalyst, wherein individual gallium nitride nanowires of the plurality of gallium nitride nanowires include a length axis that is substantially perpendicular to the nitrogenated layer.

Abstract translation: 纳米线制品包括基材; 设置在所述衬底上的多个纳米线，所述纳米线包括半导体氮化物，所述半导体包括选自周期表第3组的元素; 以及插入在所述基板和所述多个氮化镓纳米线之间的超晶格层。 制造纳米线制品的方法包括在基材上设置超晶格层; 在超晶格层上设置第一缓冲层; 使第一缓冲层与前体接触; 以及从所述第一缓冲层上的所述前体形成多个纳米线以形成所述纳米线制品，所述纳米线包含半导体氮化物，所述半导体包含选自周期表第3族的元素。 一种纳米线制品的制造方法，包括使基材氮化以在基材上形成氮化层; 使氮化层与前体接触; 以及在不存在催化剂的情况下从所述氮化层上的所述前体形成多个氮化镓纳米线，以在不存在催化剂的情况下形成所述纳米线制品，其中所述多个氮化镓纳米线中的各个氮化镓纳米线包括基本上垂直于所述氮化物 层。

公开(公告)号：US20140338074A1

公开(公告)日：2014-11-13

申请号：US14286480

申请日：2014-05-23

Applicant: NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY

Inventor： VLADIMIR AKSYUK ,  KARTIK SRINIVASAN ,  HOUXUN MIAO ,  IVO W. RANGELOW ,  THOMAS MICHELS

IPC: G01Q20/02

CPC classification number: G01Q20/02

Abstract: A microscope probe includes a substrate; an optical resonator disposed on the substrate and including an optical resonance property; a displacement member disposed on the substrate and separated from the optical resonator, the displacement member including: a first end disposed distal to the optical resonator; and a second end disposed proximate to the optical resonator; and a coupling member disposed on the substrate and connecting the displacement member to the substrate, wherein the first end is configured to probe a sample and to be displaced in response to a condition of the sample, the displacement member is configured to communicate displacement of the first end to the second end, and the second end is configured to change the optical resonance property in response to displacement of the second end

Abstract translation: 显微镜探针包括基底; 设置在基板上并包括光学谐振特性的光学谐振器; 位移构件，设置在所述基板上并与所述光学谐振器分离，所述位移构件包括：设置在所述光学谐振器的远侧的第一端; 以及靠近所述光学谐振器设置的第二端; 以及联接构件，其设置在所述基板上并且将所述位移构件连接到所述基板，其中所述第一端被配置为响应于所述样本的状态来探测样本并且被移位，所述位移构件被配置为使所述位移构件 第一端到第二端，并且第二端被配置为响应于第二端的位移来改变光学谐振特性

公开(公告)号：US20140318978A1

公开(公告)日：2014-10-30

申请号：US14269411

申请日：2014-05-05

Applicant: NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY

Inventor： DANIEL V. ESPOSITO ,  THOMAS P. MOFFAT ,  ALBERT ALEC TALIN

IPC: H01L31/02 ,  C25B1/02 ,  H01L31/18 ,  C25B11/04

CPC classification number: C25B1/02 ,  C25B1/003 ,  C25B11/04 ,  H01G9/2045 ,  Y02E10/542 ,  Y02P70/521

Abstract: A photoactive article includes a substrate including a semiconductor to absorb light and to produce a plurality of charge carriers; a dielectric layer disposed on the substrate; a conductive member disposed on the dielectric layer and opposing the substrate such that the dielectric layer is exposed by the conductive member, the conductive member to receive a portion of the plurality of charge carriers from the substrate; and an electrolyte disposed on the dielectric layer and the conductive member. Making a photoactive article includes forming a dielectric layer on a substrate by rapid thermal oxidation, the dielectric layer comprising an oxide of a semiconductor; and forming a conductive member disposed on the dielectric layer.

Abstract translation: 光活性物品包括包含用于吸收光并产生多个电荷载体的半导体的衬底; 设置在所述基板上的电介质层; 导电构件，设置在所述电介质层上并与所述基板相对，使得所述电介质层被所述导电构件暴露，所述导电构件用于从所述衬底接收所述多个电荷载流子的一部分; 以及设置在电介质层和导电构件上的电解质。 制备光活性物品包括通过快速热氧化在基底上形成电介质层，所述电介质层包含半导体的氧化物; 以及形成设置在所述电介质层上的导电构件。

公开(公告)号：US20140153327A1

公开(公告)日：2014-06-05

申请号：US13690803

申请日：2012-11-30

Applicant: The National Institute of Standards and Technology, Government of the United States of America, as R

Inventor： Curt Andrew Richter ,  Hyuk-Jae Jang

IPC: G11C11/16 ,  H01L43/02

CPC classification number: G11C11/161 ,  B82Y10/00 ,  G11C11/16 ,  H01L27/222 ,  H01L29/66984 ,  H01L43/08

Abstract: A spin transport channel includes a dielectric layer contacting a conductive layer. The dielectric layer includes at least one of a tantalum oxide, hafnium oxide, titanium oxide, and nickel oxide. An intermediate spin layer contacts the dielectric layer. The intermediate spin layer includes at least one of copper and silver. The conductive layer is more electrochemically inert than the intermediate spin layer. A polarizer layer contacts the intermediate spin layer. The polarizer layer includes one of a nickel-iron based material, iron, and cobalt based material. The conductive layer and intermediate layer are disposed on opposite sides of the dielectric layer. The dielectric layer and the polarizer layer are disposed on opposite sides of the intermediate spin layer. The intermediate spin layer is arranged to form a conducting path through the dielectric layer configured to transport a plurality of electrons. Each of the plurality of electrons maintains a polarized electron spin.

Abstract translation: 自旋传输通道包括与导电层接触的电介质层。 电介质层包括氧化钽，氧化铪，氧化钛和氧化镍中的至少一种。 中间自旋层接触电介质层。 中间旋涂层包括铜和银中的至少一种。 导电层比中间旋涂层更具电化学惰性。 偏光层接触中间旋涂层。 偏振层包括镍 - 铁基材料，铁和钴基材料中的一种。 导电层和中间层设置在电介质层的相对侧上。 电介质层和偏振层设置在中间旋涂层的相对侧上。 中间自旋层被布置成形成穿过介电层的导电路径，该电介质层配置成传输多个电子。 多个电子中的每一个保持偏振电子自旋。

公开(公告)号：US20140057361A1

公开(公告)日：2014-02-27

申请号：US13974181

申请日：2013-08-23

Applicant: National Institute of Standards and Technology

Inventor： Thomas J. Bruno

IPC: G01N1/44

CPC classification number: G01N1/2226 ,  G01N1/4022 ,  G01N1/44 ,  G01N31/12 ,  G01N2001/2229 ,  G01N2030/062 ,  Y10T436/142222 ,  Y10T436/173076 ,  Y10T436/212 ,  Y10T436/218 ,  Y10T436/25875

Abstract: A device and method for headspace sampling is disclosed herein. The headspace sampling device comprises a sample holding device configured to be sealed in a vial. The sample holding device has a pair of electrodes gap spaced from one another and a basket extending between the electrodes configured to hold a sample. The basket is configured to heat a sample held therewith and volatize at least a portion of the sample upon an electrical current being passed through the electrodes and the basket.

Abstract translation: 本文公开了用于顶空采样的装置和方法。 顶空采样装置包括被配置为密封在小瓶中的样品保持装置。 样品保持装置具有彼此间隔开的一对电极间隙，并且在配置成保持样品的电极之间延伸的篮状物。 篮被配置成加热保持在其上的样品并在电流通过电极和筐时使至少一部分样品挥发。