公开(公告)号：US20050006601A1

公开(公告)日：2005-01-13

申请号：US10885666

申请日：2004-07-08

Applicant: Masato Muraki ,  Hiroya Ohta ,  Osamu Kamimura

Inventor： Masato Muraki ,  Hiroya Ohta ,  Osamu Kamimura

IPC: H01J37/153 ,  H01J37/317 ,  H01J3/26 ,  G21K5/10 ,  H01J37/08

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/153 ,  H01J37/3174

Abstract: A charged particle beam exposure apparatus has a beam shaping optical system which forms an image of a charged particle source that emits charged particle beams, an aperture array and electrostatic lens which form a plurality of images of the charged particle source from the image of the charged particle source, a reduction electron optical system which reduces and projects the plurality of images of the charged particle source onto a wafer, and the first stigmator which generates astigmatism when the beam shaping optical system forms the image of the charged particle source in order to correct astigmatism generated in the reduction electron optical system. A charged particle beam exposure method of exposing a substrate by scanning with charged particle beams includes an adjustment step of making the size in the scanning direction of charged particle beams on the substrate smaller than the size in a direction perpendicular to the direction.

Abstract translation: 带电粒子束曝光装置具有光束整形光学系统，其形成发射带电粒子束的带电粒子源的图像，孔径阵列和静电透镜，其从带电粒子源的图像形成带电粒子源的多个图像 粒子源，还原电子光学系统，其将带电粒子源的多个图像减少并投影到晶片上;以及当束整形光学系统形成带电粒子源的图像以产生像散的第一标示器，以便校正 在还原电子光学系统中产生散光。 通过用带电粒子束扫描使基板曝光的带电粒子束曝光方法包括使基板上的带电粒子束的扫描方向的尺寸小于垂直于该方向的方向上的尺寸的调整步骤。

公开(公告)号：US08022365B2

公开(公告)日：2011-09-20

申请号：US12168940

申请日：2008-07-08

Applicant: Osamu Kamimura ,  Hiroya Ohta

Inventor： Osamu Kamimura ,  Hiroya Ohta

IPC: H01J37/28 ,  H01J3/26

CPC classification number: H01J37/295

Abstract: In an electron microscope to which a phase retrieval method is applied, an image size determined by a pixel size p of a diffraction pattern, a camera length L, and a wavelength λ of an illumination beam is allowed to have a certain relation with an illumination area on a specimen. Further, a beam illumination area or a scanning area of a deflector when a magnified image is observed is set by an illumination adjustment system, so that an image size when the magnified image is used for the phase retrieval method is allowed to have a certain relation with the image size determined by the pixel size of the diffraction pattern, the camera length, and the wavelength of the illumination beam. Accordingly, the information of the diffraction pattern is substantially equal to an object image to be reconstructed.

Abstract translation: 在应用了相位检索方法的电子显微镜中，允许由照射光束的衍射图案的像素尺寸p，照相机长度L和波长λ确定的图像尺寸与照明具有一定关系 标本上的区域。 此外，通过照明调整系统设定观察放大图像时的光束照明区域或偏转器的扫描区域，使得当使用放大图像进行相位检索方法时的图像尺寸被允许具有一定关系 其中图像尺寸由衍射图案的像素尺寸，相机长度和照明光束的波长确定。 因此，衍射图案的信息基本上等于要重构的对象图像。

公开(公告)号：US20090014651A1

公开(公告)日：2009-01-15

申请号：US12168940

申请日：2008-07-08

Applicant: Osamu Kamimura ,  Hiroya Ohta

Inventor： Osamu Kamimura ,  Hiroya Ohta

IPC: H01J37/28

CPC classification number: H01J37/295

Abstract: In an electron microscope to which a phase retrieval method is applied, an image size determined by a pixel size p of a diffraction pattern, a camera length L, and a wavelength λ of an illumination beam is allowed to have a certain relation with an illumination area on a specimen. Further, a beam illumination area or a scanning area of a deflector when a magnified image is observed is set by an illumination adjustment system, so that an image size when the magnified image is used for the phase retrieval method is allowed to have a certain relation with the image size determined by the pixel size of the diffraction pattern, the camera length, and the wavelength of the illumination beam. Accordingly, the information of the diffraction pattern is substantially equal to an object image to be reconstructed.

Abstract translation: 在应用了相位检索方法的电子显微镜中，由衍射图案的像素尺寸p，照相机长度L和照明光束的波长λ确定的图像尺寸被允许与照明具有一定关系 标本上的区域。 此外，通过照明调整系统设定观察放大图像时的光束照明区域或偏转器的扫描区域，使得当使用放大图像进行相位检索方法时的图像尺寸被允许具有一定关系 其中图像尺寸由衍射图案的像素尺寸，相机长度和照明光束的波长确定。 因此，衍射图案的信息基本上等于要重构的对象图像。

公开(公告)号：US20070023654A1

公开(公告)日：2007-02-01

申请号：US11475934

申请日：2006-06-28

Applicant: Osamu Kamimura ,  Tadashi Kanosue ,  Yasunari Sohda ,  Susumu Goto

Inventor： Osamu Kamimura ,  Tadashi Kanosue ,  Yasunari Sohda ,  Susumu Goto

IPC: G21G5/00

CPC classification number: H01J37/265 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/304 ,  H01J37/3177 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/28

Abstract: An object of the present invention is to measure a landing angle even in a multi electron beam lithography system in which current amount of each beam is small. Another object thereof is to measure an absolute value of the landing angle and a relative landing angle with the high SN ratio. In a transmission detector including two diaphragm plates (first and second diaphragms) and a detector, a detection angle determined by a distance between the first and second diaphragms and an aperture diameter of the second diaphragm is made equal to or smaller than the divergence angle of the electron beam to be measured, and the landing angle is determined based on the relation between a center of the fine hole of the first diaphragm and the center of the aperture of the second diaphragm at which the amount of detected current is maximum.

Abstract translation: 本发明的目的是即使在多束电子束光刻系统中也测量着色角，其中每个光束的电流量都很小。 其另一个目的是测量着陆角的绝对值和具有高SN比的相对着陆角。 在包括两个隔膜板（第一和第二隔膜）和检测器的传输检测器中，由第一和第二隔膜之间的距离和第二隔膜的孔径确定的检测角度等于或小于 基于第一膜片的细孔的中心与检测电流量最大的第二膜片的孔的中心之间的关系来确定待测量的电子束和着陆角。

公开(公告)号：US07049607B2

公开(公告)日：2006-05-23

申请号：US10951769

申请日：2004-09-29

Applicant: Yasunari Sohda ,  Hiroya Ohta ,  Osamu Kamimura ,  Susumu Gotoh

Inventor： Yasunari Sohda ,  Hiroya Ohta ,  Osamu Kamimura ,  Susumu Gotoh

IPC: G01N23/00

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3045 ,  H01J37/3177 ,  H01J2237/3045

Abstract: Electron beam writing equipment has an electron source and an electron optics system for scanning an electron beam emitted from the electron source on a sample via deflection means having at least two different deflection speeds. An objective lens is used to form a desired pattern on the sample The electron beam is moved by high speed scanning with the deflection means to repeat formation of a patterned beam. The electron beam is moved on the mark for beam correction by low speed scanning with the deflection means in synchronization with one cycle of the repetition. The position or the deflection distance of the electron beam or blanking time is corrected using detectors for back scattered or secondary electrons.

Abstract translation: 电子束写入设备具有电子源和电子光学系统，用于通过具有至少两个不同偏转速度的偏转装置扫描从电子源在样品上发射的电子束。 使用物镜在样品上形成期望的图案电子束通过用偏转装置的高速扫描移动，以重复形成图案化的束。 电子束通过与偏转装置的低速扫描同步于重复的一个周期而在标记上移动以进行光束校正。 使用用于背散射或二次电子的检测器校正电子束的位置或偏转距离或消隐时间。

公开(公告)号：US07041988B2

公开(公告)日：2006-05-09

申请号：US10431782

申请日：2003-05-08

Applicant: Shinichi Hamaguchi ,  Susumu Goto ,  Osamu Kamimura ,  Yasunari Sohda

Inventor： Shinichi Hamaguchi ,  Susumu Goto ,  Osamu Kamimura ,  Yasunari Sohda

IPC: G21G5/00 ,  G21K5/10

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G21K1/093 ,  H01J37/153 ,  H01J37/3177 ,  H01J2237/1536

Abstract: An electron beam exposure apparatus for exposing wafer with an electron beam, includes: a first electromagnetic lens system for making the electron beam incident substantially perpendicularly on a first plane be incident on a second plane substantially perpendicularly; a second electromagnetic lens system for making the electron beam that was substantially perpendicularly incident on the second plane be incident on the wafer substantially perpendicularly; a rotation correction lens provided within the first electromagnetic lens system for correcting rotation of the electron beam caused by at least the first electromagnetic lens system; a deflection system for deflecting the electron beam to a position on the wafer; and a deflection-correction optical system provided within the second electromagnetic lens system for correcting deflection aberration caused by the deflection system.

Abstract translation: 一种用电子束曝光晶片的电子束曝光装置，包括：用于使基本上垂直于第一平面的电子束入射到第二平面上的第一电磁透镜系统基本垂直入射; 用于使基本上垂直入射在第二平面上的电子束的第二电磁透镜系统基本上垂直入射在晶片上; 旋转校正透镜，设置在第一电磁透镜系统内，用于校正由至少第一电磁透镜系统引起的电子束的旋转; 用于将电子束偏转到晶片上的位置的偏转系统; 以及设置在第二电磁透镜系统内用于校正由偏转系统引起的偏转像差的偏转校正光学系统。

公开(公告)号：US07015482B2

公开(公告)日：2006-03-21

申请号：US10354959

申请日：2003-01-31

Applicant: Yasunari Sohda ,  Yoshinori Nakayama ,  Osamu Kamimura ,  Masato Muraki ,  Masaki Takakuwa

Inventor： Yasunari Sohda ,  Yoshinori Nakayama ,  Osamu Kamimura ,  Masato Muraki ,  Masaki Takakuwa

IPC: G21K7/00 ,  G21K5/10

CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/304 ,  H01J2237/043 ,  H01J2237/24405

Abstract: An electron beam writing system, using discrete electron beams in which the interval of the beams is larger than the size of the beams, generates plural electron beams, on/off controls each of the electron beams according to pattern data to be written, and deflects the electron beams together, thereby performing writing on a wafer. One side of a unit writing area of the electon beams is larger than substantially twice the interval of the electron beams or substantially an integral multiple thereof.

Abstract translation: 一种电子束写入系统，使用离散电子束，其中光束的间隔大于光束的大小，产生多个电子束，根据要写入的图形数据，对每个电子束进行开/关控制，并偏转 电子束在一起，从而在晶片上进行写入。 电子束的单位写入区域的一侧大于电子束的间隔的两倍或其基本上的整数倍。

公开(公告)号：US20050072939A1

公开(公告)日：2005-04-07

申请号：US10957695

申请日：2004-10-05

Applicant: Yasunari Sohda ,  Osamu Kamimura ,  Yoshinori Nakayama ,  Sayaka Tanimoto ,  Masato Muraki

Inventor： Yasunari Sohda ,  Osamu Kamimura ,  Yoshinori Nakayama ,  Sayaka Tanimoto ,  Masato Muraki

IPC: G01B11/00 ,  G03F7/20 ,  G03F9/00 ,  H01J37/304 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027 ,  H01L21/68

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3045 ,  H01J2237/2482

Abstract: The present invention provides a writing technique which can perform high-accuracy overlay writing in electron beam writing equipment performing mark detection by light. Electron beam writing equipment has an electron source; an electron optical system illuminating an electron beam emitted from the electron source onto a sample for scanning to form a desired pattern on the sample; a stage mounting the sample; a mark substrate provided on the stage; means beaming a light beam for position detection which is on the same side as the illumination direction of the electron beam for illuminating the mark substrate; light detection means which is on the same side as the means beaming a light beam for detecting reflected light reflected on the mark substrate; and electron detection means which is on the side opposite the light detection means with respect to the mark substrate for detecting a transmitted electron obtained by illumination of the electron beam onto the mark substrate, wherein relative position information of the light beam and the electron beam is obtained based on the signals of the detected reflected light and transmitted electron.

Abstract translation: 本发明提供了一种写入技术，其能够通过光执行标记检测的电子束写入设备中执行高精度重叠写入。 电子束写入设备具有电子源; 电子光学系统将从电子源发射的电子束照射到样品上以进行扫描以在样品上形成所需图案; 安装样品的阶段; 设置在台上的标记基板; 意味着将用于位置检测的光束照射在与用于照射标记基板的电子束的照射方向相同的一侧; 光检测装置与发出用于检测在标记基板上反射的反射光的光束相同的一侧; 以及电子检测装置，其相对于用于检测通过将电子束照射到标记基板上而获得的透射电子的标记基板在与光检测装置相反的一侧，其中光束和电子束的相对位置信息为 基于检测到的反射光和透射电子的信号获得。

公开(公告)号：US20050040343A1

公开(公告)日：2005-02-24

申请号：US10951769

申请日：2004-09-29

Applicant: Yasunari Sohda ,  Hiroya Ohta ,  Osamu Kamimura ,  Susumu Gotoh

Inventor： Yasunari Sohda ,  Hiroya Ohta ,  Osamu Kamimura ,  Susumu Gotoh

IPC: G03F7/20 ,  G01Q30/02 ,  H01J37/147 ,  H01J37/304 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027 ,  G21G5/00

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3045 ,  H01J37/3177 ,  H01J2237/3045

Abstract: Electron beam writing equipment has an electron source and an electron optics system for scanning an electron beam emitted from the electron source on a sample via deflection means having at least two different deflection speeds. An objective lens is used to form a desired pattern on the sample The electron beam is moved by high speed scanning with the deflection means to repeat formation of a patterned beam. The electron beam is moved on the mark for beam correction by low speed scanning with the deflection means in synchronization with one cycle of the repetition. The position or the deflection distance of the electron beam or blanking time is corrected using detectors for back scattered or secondary electrons.

Abstract translation: 电子束写入设备具有电子源和电子光学系统，用于通过具有至少两个不同偏转速度的偏转装置扫描从电子源在样品上发射的电子束。 使用物镜在样品上形成期望的图案电子束通过用偏转装置的高速扫描移动，以重复形成图案化的束。 电子束通过与偏转装置的低速扫描同步于重复的一个周期而在标记上移动以进行光束校正。 使用用于背散射或二次电子的检测器校正电子束的位置或偏转距离或消隐时间。

公开(公告)号：US06809319B2

公开(公告)日：2004-10-26

申请号：US10629567

申请日：2003-07-30

Applicant: Yasunari Sohda ,  Hiroya Ohta ,  Osamu Kamimura ,  Susumu Gotoh

Inventor： Yasunari Sohda ,  Hiroya Ohta ,  Osamu Kamimura ,  Susumu Gotoh

IPC: H01J3728

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3045 ,  H01J37/3177 ,  H01J2237/3045

Abstract: Electron beam writing equipment has an electron source and an electron optics system for scanning an electron beam emitted from the electron source on a sample via deflection means having at least two different deflection speeds. An objective lens is used to form a desired pattern on the sample. The electron beam is moved by high speed scanning with the deflection means to repeat formation of a patterned beam. The electron beam is moved on the mark for beam correction by low speed scanning with the deflection means in synchronization with one cycle of the repetition. The position or the deflection distance of the electron beam or blanking time is corrected using detectors for back scattered or secondary electrons.

Abstract translation: 电子束写入设备具有电子源和电子光学系统，用于通过具有至少两个不同偏转速度的偏转装置扫描从电子源在样品上发射的电子束。 物镜用于在样品上形成所需的图案。 用偏转装置通过高速扫描来移动电子束以重复形成图案化的束。 电子束通过与偏转装置的低速扫描同步于重复的一个周期而在标记上移动以进行光束校正。 使用用于背散射或二次电子的检测器校正电子束的位置或偏转距离或消隐时间。