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公开(公告)号：US20130082599A1
公开(公告)日：2013-04-04
申请号：US13251819
申请日：2011-10-03
Applicant: Kamal Hadidi , Rajesh Dorai
Inventor： Kamal Hadidi , Rajesh Dorai
IPC: H05H1/46 , H01L21/3065 , H01J27/02
CPC classification number: H01J37/08 , H01J37/321 , H01J37/3211 , H01J37/32357 , H01J37/32422
Abstract: A RF source and method are disclosed which inductively create a plasma within an enclosure without an electric field or with a significantly decreased creation of an electric field. A ferrite material with an insulated wire wrapped around its body is used to efficiently channel the magnetic field through the legs of the ferrite. This magnetic field, which flows between the legs of the ferrite can then be used to create and maintain a plasma. In one embodiment, these legs rest on a dielectric window, such that the magnetic field passes into the chamber. In another embodiment, the legs of the ferrite extend into the processing chamber, thereby further extending the magnetic field into the chamber. This ferrite can be used in conjunction with a PLAD chamber, or an ion source for a traditional beam line ion implantation system.
Abstract translation: 公开了RF源和方法，其在外壳内感应地产生等离子体而没有电场或显着减少电场的产生。 使用缠绕在其本体上的具有绝缘线的铁氧体材料来有效地将磁场通过铁氧体的腿引导。 然后，可以使用在铁氧体的腿部之间流动的磁场来产生和维持等离子体。 在一个实施例中，这些腿搁置在电介质窗口上，使得磁场进入腔室。 在另一个实施例中，铁氧体的腿延伸到处理室中，从而进一步将磁场延伸到腔室中。 该铁氧体可以与PLAD室或用于传统束线离子注入系统的离子源结合使用。
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12.发明申请公开(公告)号：US20110000896A1
公开(公告)日：2011-01-06
申请号：US12496080
申请日：2009-07-01
Applicant: Kamal Hadidi , Rajesh Dorai , Bernard G. Lindsay , Vikram Singh , George D. Papasouliotis
Inventor： Kamal Hadidi , Rajesh Dorai , Bernard G. Lindsay , Vikram Singh , George D. Papasouliotis
IPC: H05H1/34 , H01L21/465
CPC classification number: C23C14/48 , H01J37/32412 , H01J37/32935
Abstract: A method is disclosed for adjusting the composition of plasmas used in plasma doping, plasma deposition and plasma etching techniques. The disclosed method enables the plasma composition to be controlled by modifying the energy distribution of the electrons present in the plasma. Energetic electrons are produced in the plasma by accelerating electrons in the plasma using very fast voltage pulses. The pulses are long enough to influence the electrons, but too fast to affect the ions significantly. Collisions between the energetic electrons and the constituents of the plasma result in changes in the plasma composition. The plasma composition can then be optimized to meet the requirements of the specific process being used. This can entail changing the ratio of ion species in the plasma, changing the ratio of ionization to dissociation, or changing the excited state population of the plasma.
Abstract translation: 公开了一种用于调节用于等离子体掺杂，等离子体沉积和等离子体蚀刻技术的等离子体的组成的方法。 所公开的方法使得能够通过修改存在于等离子体中的电子的能量分布来控制等离子体组成。 通过使用非常快的电压脉冲加速等离子体中的电子，在等离子体中产生能量电子。 脉冲长度足以影响电子，但是太快而不能显着影响离子。 能量电子与等离子体成分之间的碰撞导致等离子体组成的变化。 然后可以优化等离子体组成以满足所使用的具体方法的要求。 这可能需要改变等离子体中的离子种类的比例，改变离子化与解离的比例，或改变等离子体的激发态群体。
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13.发明授权公开(公告)号：US07667208B2
公开(公告)日：2010-02-23
申请号：US11550140
申请日：2006-10-17
Applicant: Rajesh Dorai
Inventor： Rajesh Dorai
IPC: H01J37/244 , H01J37/252
CPC classification number: H01J37/3266 , H01J37/32412 , H01J2237/0045
Abstract: A technique for confining secondary electrons on a wafer is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus and method for confining secondary electrons in plasma-based ion implantation. The apparatus and method may comprise a magnetic field portion of a magnetic field configuration placed under a target wafer for generating a magnetic field above the target wafer for confining secondary electrons on the target wafer. The apparatus and method may also comprise a magnetic field above the target wafer that is substantially parallel to an upper surface of the target wafer. The apparatus and method may additionally comprise a magnetic field portion comprising at least one of a plurality of coils, one or more current-carrying wires, and a plurality of magnets.
Abstract translation: 公开了一种限制二次电子在晶片上的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于限制基于等离子体的离子注入中的二次电子的装置和方法。 该装置和方法可以包括放置在目标晶片之下的磁场结构的磁场部分，用于在目标晶片上产生用于限制目标晶片上的二次电子的磁场。 该装置和方法还可以包括基本上平行于目标晶片的上表面的目标晶片上方的磁场。 该装置和方法可以另外包括磁场部分，其包括多个线圈，一个或多个载流导线和多个磁体中的至少一个。
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公开(公告)号：US07655922B2
公开(公告)日：2010-02-02
申请号：US11568000
申请日：2006-12-07
Applicant: Donna L. Smatlak , Gordon C. Angel , Rajesh Dorai
Inventor： Donna L. Smatlak , Gordon C. Angel , Rajesh Dorai
IPC: H01J37/317
CPC classification number: H01J37/3171 , H01J37/026 , H01J2237/0041 , H01J2237/055 , H01J2237/152 , H01J2237/31701
Abstract: Techniques for confining electrons in an ion implanter are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for confining electrons in an ion implanter. The apparatus may comprise a first array of magnets and a second array of magnets positioned along at least a portion of a beam path, the first array being on a first side of the beam path and the second array being on a second side of the beam path, the first side opposing the second side. At least one magnet in the first array may have a pole facing an opposite pole of a corresponding magnet in the second array.
Abstract translation: 公开了将电子限制在离子注入机中的技术。 在一个特定的示例性实施例中，技术可以被实现为用于将电子限制在离子注入机中的装置。 该装置可以包括第一磁体阵列和沿着光束路径的至少一部分定位的第二磁体阵列，第一阵列位于光束路径的第一侧上，第二阵列位于光束的第二侧上 路径，第一面反对第二面。 第一阵列中的至少一个磁体可以具有面对第二阵列中相应磁体的相对极的极。
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15.发明申请METHOD AND APPARATUS FOR CONTROLLING BEAM CURRENT UNIFORMITY IN AN ION IMPLANTER 有权用于控制离子植入物中光束电流均匀性的方法和装置公开(公告)号：US20090314962A1
公开(公告)日：2009-12-24
申请号：US12143144
申请日：2008-06-20
Applicant: Rajesh DORAI , Peter F. Kurunczi , Alexander S. Perel , Wilhelm P. Platow
Inventor： Rajesh DORAI , Peter F. Kurunczi , Alexander S. Perel , Wilhelm P. Platow
CPC classification number: H01J37/3171 , H01J37/04 , H01J37/08 , H01J37/09 , H01J2237/024 , H01J2237/0455 , H01J2237/08 , H01J2237/083 , H01J2237/0835 , H01J2237/24542
Abstract: An electrode assembly for use with an ion source chamber or as part of an ion implanter processing system to provide a uniform ion beam profile. The electrode assembly includes an electrode having an extraction slot with length L aligned with an aperture of the ion source chamber for extracting an ion beam. The electrode includes a plurality of segments partitioned within the length of the extraction slot where each of the segments is configured to be displaced in at least one direction with respect to the ion beam. A plurality of actuators are connected to the plurality of electrode segments for displacing one or more of the segments. By displacing at least one of the plurality of electrode segments, the current density of a portion of the ion beam corresponding to the position of the segment within the extraction slot is modified to provide a uniform current density beam profile associated with the extracted ion beam.
Abstract translation: 一种与离子源室一起使用或作为离子注入机处理系统的一部分以提供均匀离子束分布的电极组件。 电极组件包括具有长度为L的提取槽的电极，其与用于提取离子束的离子源室的孔径对准。 电极包括在提取槽的长度内分隔的多个段，其中每个段被配置为相对于离子束在至少一个方向上移位。 多个致动器连接到多个电极段，用于移动一个或多个段。 通过移位多个电极段中的至少一个，修改与提取槽内的段的位置相对应的一部分离子束的电流密度，以提供与提取的离子束相关联的均匀的电流密度波束轮廓。
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Patent Agency Ranking
公开(公告)号：US20080135775A1
公开(公告)日：2008-06-12
申请号：US11568000
申请日：2006-12-07
Applicant: Donna L. Smatlak , Gordon C. Angel , Rajesh Dorai
Inventor： Donna L. Smatlak , Gordon C. Angel , Rajesh Dorai
IPC: H01J1/50
CPC classification number: H01J37/3171 , H01J37/026 , H01J2237/0041 , H01J2237/055 , H01J2237/152 , H01J2237/31701
Abstract: Techniques for confining electrons in an ion implanter are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for confining electrons in an ion implanter. The apparatus may comprise a first array of magnets and a second array of magnets positioned along at least a portion of a beam path, the first array being on a first side of the beam path and the second array being on a second side of the beam path, the first side opposing the second side. At least one magnet in the first array may have a pole facing an opposite pole of a corresponding magnet in the second array.
Abstract translation: 公开了将电子限制在离子注入机中的技术。 在一个特定的示例性实施例中，技术可以被实现为用于将电子限制在离子注入机中的装置。 该装置可以包括第一磁体阵列和沿着光束路径的至少一部分定位的第二磁体阵列，第一阵列位于光束路径的第一侧上，第二阵列位于光束的第二侧上 路径，第一面反对第二面。 第一阵列中的至少一个磁体可以具有面对第二阵列中相应磁体的相对极的极。
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17.发明授权System and method for selectively controlling ion composition of ion sources 有权用于选择性地控制离子源的离子组成的系统和方法公开(公告)号：US08664561B2
公开(公告)日：2014-03-04
申请号：US12496080
申请日：2009-07-01
Applicant: Kamal Hadidi , Rajesh Dorai , Bernard G. Lindsay , Vikram Singh , George D. Papasouliotis
Inventor： Kamal Hadidi , Rajesh Dorai , Bernard G. Lindsay , Vikram Singh , George D. Papasouliotis
IPC: B23K10/00
CPC classification number: C23C14/48 , H01J37/32412 , H01J37/32935
Abstract: A method is disclosed for adjusting the composition of plasmas used in plasma doping, plasma deposition and plasma etching techniques. The disclosed method enables the plasma composition to be controlled by modifying the energy distribution of the electrons present in the plasma. Energetic electrons are produced in the plasma by accelerating electrons in the plasma using very fast voltage pulses. The pulses are long enough to influence the electrons, but too fast to affect the ions significantly. Collisions between the energetic electrons and the constituents of the plasma result in changes in the plasma composition. The plasma composition can then be optimized to meet the requirements of the specific process being used. This can entail changing the ratio of ion species in the plasma, changing the ratio of ionization to dissociation, or changing the excited state population of the plasma.
Abstract translation: 公开了一种用于调节用于等离子体掺杂，等离子体沉积和等离子体蚀刻技术的等离子体的组成的方法。 所公开的方法使得能够通过修改存在于等离子体中的电子的能量分布来控制等离子体组成。 通过使用非常快的电压脉冲加速等离子体中的电子，在等离子体中产生能量电子。 脉冲长度足以影响电子，但是太快而不能显着影响离子。 能量电子与等离子体成分之间的碰撞导致等离子体组成的变化。 然后可以优化等离子体组成以满足所使用的具体方法的要求。 这可能需要改变等离子体中的离子种类的比例，改变离子化与解离的比例，或改变等离子体的激发态群体。
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公开(公告)号：US08003498B2
公开(公告)日：2011-08-23
申请号：US12269344
申请日：2008-11-12
Applicant: Jonathan G. England , Frank Sinclair , John (Bon-Woong) Koo , Rajesh Dorai , Ludovic Godet
Inventor： Jonathan G. England , Frank Sinclair , John (Bon-Woong) Koo , Rajesh Dorai , Ludovic Godet
CPC classification number: H01L21/02689 , C30B1/023 , C30B29/06 , H01L21/0237 , H01L21/02422 , H01L21/02532 , H01L21/268 , H01L31/0747 , H01L31/182 , H01L31/202 , Y02E10/546 , Y02P70/521
Abstract: Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: introducing a plurality of first particles to a first region of the substrate so as to form at least one crystal having a grain boundary in the first region without forming another crystal in a second region, the second region adjacent to the first region; and extending the grain boundary of the at least one crystal formed in the first region to the second region after stopping the introducing the plurality of first particles.
Abstract translation: 公开了用于处理基板的方法的几个实例。 在特定实施例中，该方法可以包括：将多个第一粒子引入到衬底的第一区域，以便在第一区域中形成至少一个具有晶界的晶体，而不在第二区域中形成另一晶体， 邻近第一区域的区域; 并且在停止引入多个第一颗粒之后，将形成在第一区域中的至少一个晶体的晶界延伸到第二区域。
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公开(公告)号：US07812321B2
公开(公告)日：2010-10-12
申请号：US12137225
申请日：2008-06-11
Applicant: Peter Kurunczi , Rajesh Dorai , Costel Biloiu , Wilhelm Platow
Inventor： Peter Kurunczi , Rajesh Dorai , Costel Biloiu , Wilhelm Platow
CPC classification number: H01J37/08 , H01J27/08 , H01J27/16 , H01J37/3171 , H01J2237/061 , H01J2237/0817 , H01J2237/082 , H01J2237/0827 , H01J2237/304
Abstract: Techniques for providing a multimode ion source are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation comprising an ion source that operates in multiple modes such that a first mode is an arc-discharge mode and a second mode is an RF mode.
Abstract translation: 公开了提供多模离子源的技术。 在一个特定示例性实施例中，可以将技术实现为用于离子注入的装置，其包括以多种模式操作的离子源，使得第一模式是电弧放电模式，而第二模式是RF模式。
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公开(公告)号：US20090124065A1
公开(公告)日：2009-05-14
申请号：US12269327
申请日：2008-11-12
Applicant: Jonathan G. ENGLAND , Frank Sinclair , John (Bon-Woong) Koo , Rajesh Dorai , Ludovic Godet
Inventor： Jonathan G. ENGLAND , Frank Sinclair , John (Bon-Woong) Koo , Rajesh Dorai , Ludovic Godet
IPC: H01L21/20
CPC classification number: H01L21/02689 , C30B1/023 , C30B29/06 , H01L21/0237 , H01L21/02422 , H01L21/02532 , H01L21/268 , H01L31/0747 , H01L31/182 , H01L31/202 , Y02E10/546 , Y02P70/521
Abstract: Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: disposing a substrate having an upper surface and a lower surface on a platen contained in a chamber; generating a plasma containing a plurality of charged particles above the upper surface of the substrate, the plasma having a cross sectional area equal to or greater than a surface area of the upper surface of the substrate; applying a first bias voltage to the substrate to attract the charged particles toward the upper surface of the substrate; introducing the charged particles to a region extending under entire upper surface of the substrate; and initiating, concurrently, a first phase transformation in the region from the amorphous phase to a crystalline phase.
Abstract translation: 公开了用于处理衬底的方法的几个实例。 在特定实施例中，该方法可以包括：将具有上表面和下表面的基底设置在容纳在腔室中的压板上; 在所述基板的上表面上方产生含有多个带电粒子的等离子体，所述等离子体的截面积等于或大于所述基板的上表面的表面积; 向所述衬底施加第一偏置电压以将所述带电粒子吸引到所述衬底的上表面; 将带电粒子引入到在基板的整个上表面下延伸的区域; 并且在从非晶相到结晶相的区域中同时引发第一相转变。
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