中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

20 records (took 0.018 seconds)

    SEMICONDUCTOR PROCESSING CHAMBER FOR IMPROVED PRECURSOR FLOW
    13.
    发明申请
    SEMICONDUCTOR PROCESSING CHAMBER FOR IMPROVED PRECURSOR FLOW 审中-公开

    公开(公告)号：US20180337024A1

    公开(公告)日：2018-11-22

    申请号：US15981089

    申请日：2018-05-16

    Applicant: Applied Materials, Inc.

    Inventor： Tien Fak Tan ,  Dmitry Lubomirsky ,  Soonwook Jung ,  Soonam Park ,  Raymond W. Lu ,  Phong Pham ,  Edwin C. Suarez

    IPC: H01J37/32 ,  H01L21/3065 ,  C23C16/455

    Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include an adapter coupled with the remote plasma unit. The adapter may include a first end and a second end opposite the first end. The adapter may define an opening to a central channel at the first end, and the central channel may be characterized by a first cross-sectional surface area. The adapter may define an exit from a second channel at the second end, and the adapter may define a transition between the central channel and the second channel within the adapter between the first end and the second end. The adapter may define a third channel between the transition and the second end of the adapter, and the third channel may be fluidly isolated from the central channel and the second channel.

    Systems and methods for internal surface conditioning in plasma processing equipment
    14.
    发明授权
    Systems and methods for internal surface conditioning in plasma processing equipment 有权
    等离子体处理设备内部表面处理的系统和方法

    公开(公告)号：US09355922B2

    公开(公告)日：2016-05-31

    申请号：US14514213

    申请日：2014-10-14

    Applicant: Applied Materials, Inc.

    Inventor： Soonam Park ,  Yufei Zhu ,  Edwin C. Suarez ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Jiayin Huang

    IPC: H01L21/3065 ,  H01L21/66 ,  H01L21/67

    CPC classification number: H01L21/67069 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/3255 ,  H01J37/32972 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/32137 ,  H01L21/67253 ,  H01L22/26

    Abstract: A method of conditioning internal surfaces of a plasma source includes flowing first source gases into a plasma generation cavity of the plasma source that is enclosed at least in part by the internal surfaces. Upon transmitting power into the plasma generation cavity, the first source gases ignite to form a first plasma, producing first plasma products, portions of which adhere to the internal surfaces. The method further includes flowing the first plasma products out of the plasma generation cavity toward a process chamber where a workpiece is processed by the first plasma products, flowing second source gases into the plasma generation cavity. Upon transmitting power into the plasma generation cavity, the second source gases ignite to form a second plasma, producing second plasma products that at least partially remove the portions of the first plasma products from the internal surfaces.

    Abstract translation: 调节等离子体源的内表面的方法包括将第一源气体流入等离子体源的等离子体产生腔中，所述等离子体源至少部分地被内表面封闭。 在将功率发射到等离子体产生腔中时，第一源气体点燃以形成第一等离子体，产生第一等离子体产物，其部分粘附到内表面。 该方法还包括使第一等离子体产物从等离子体产生腔流出到处理室，其中工件被第一等离子体产物处理，使第二源气体流入等离子体产生腔。 在将功率发射到等离子体产生腔中时，第二源气体点燃以形成第二等离子体，产生至少部分地从内表面去除第一等离子体产物的部分的第二等离子体产物。

    Cover ring for use in semiconductor processing chamber
    17.
    外观设计
    Cover ring for use in semiconductor processing chamber 有权

    公开(公告)号：USD1038049S1

    公开(公告)日：2024-08-06

    申请号：US29758812

    申请日：2020-11-18

    Applicant: APPLIED MATERIALS, INC.

    Designer： Abhishek Chowdhury ,  Harisha Sathyanarayana ,  Edwin C. Suarez ,  Siqing Lu ,  Nataraj Bhaskar Rao

    Abstract: FIG. 1 is a bottom isometric view of a cover ring for use in a semiconductor processing chamber in accordance with some embodiments.
    FIG. 2 is a top plan view thereof.
    FIG. 3 is a bottom plan view thereof.
    FIG. 4 is a front elevation view thereof.
    FIG. 5 is a back elevation view thereof.
    FIG. 6 is a right side elevation view thereof; and,
    FIG. 7 is a left side elevation view thereof.
    The broken lines in the drawings illustrate portions of the cover ring for use in a semiconductor processing chamber that form no part of the claimed design.

    SYSTEMS AND METHODS FOR INTERNAL SURFACE CONDITIONING IN PLASMA PROCESSING EQUIPMENT
    19.
    发明申请
    SYSTEMS AND METHODS FOR INTERNAL SURFACE CONDITIONING IN PLASMA PROCESSING EQUIPMENT 有权
    用于等离子体处理设备内部表面调节的系统和方法

    公开(公告)号：US20160104648A1

    公开(公告)日：2016-04-14

    申请号：US14514213

    申请日：2014-10-14

    Applicant: Applied Materials, Inc.

    Inventor： Soonam Park ,  Yufei Zhu ,  Edwin C. Suarez ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Jiayin Huang

    IPC: H01L21/66 ,  H01L21/67 ,  H01L21/3065

    CPC classification number: H01L21/67069 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/3255 ,  H01J37/32972 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/32137 ,  H01L21/67253 ,  H01L22/26

    Abstract: A method of conditioning internal surfaces of a plasma source includes flowing first source gases into a plasma generation cavity of the plasma source that is enclosed at least in part by the internal surfaces. Upon transmitting power into the plasma generation cavity, the first source gases ignite to form a first plasma, producing first plasma products, portions of which adhere to the internal surfaces. The method further includes flowing the first plasma products out of the plasma generation cavity toward a process chamber where a workpiece is processed by the first plasma products, flowing second source gases into the plasma generation cavity. Upon transmitting power into the plasma generation cavity, the second source gases ignite to form a second plasma, producing second plasma products that at least partially remove the portions of the first plasma products from the internal surfaces.

    Abstract translation: 调节等离子体源的内表面的方法包括将第一源气体流入等离子体源的等离子体产生腔中，所述等离子体源至少部分地被内表面封闭。 在将功率发射到等离子体产生腔中时，第一源气体点燃以形成第一等离子体，产生第一等离子体产物，其部分粘附到内表面。 该方法还包括使第一等离子体产物从等离子体产生腔流出到处理室，其中工件被第一等离子体产物处理，使第二源气体流入等离子体产生腔。 在将功率发射到等离子体产生腔中时，第二源气体点燃以形成第二等离子体，产生至少部分地从内表面去除第一等离子体产物的部分的第二等离子体产物。

    SYSTEMS AND METHODS FOR INTERNAL SURFACE CONDITIONING ASSESSMENT IN PLASMA PROCESSING EQUIPMENT
    20.
    发明申请
    SYSTEMS AND METHODS FOR INTERNAL SURFACE CONDITIONING ASSESSMENT IN PLASMA PROCESSING EQUIPMENT 有权
    等离子体处理设备内部表面调节评估系统与方法

    公开(公告)号：US20160104606A1

    公开(公告)日：2016-04-14

    申请号：US14514222

    申请日：2014-10-14

    Applicant: Applied Materials, Inc.

    Inventor： Soonam Park ,  Yufei Zhu ,  Edwin C. Suarez ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Jiayin Huang

    IPC: H01J37/32 ,  C23C16/50 ,  G01J3/02

    CPC classification number: H01J37/32972 ,  C23C16/4405 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/50 ,  C23C16/52 ,  G01J3/0218 ,  G01J3/443 ,  H01J37/32082 ,  H01J37/32532 ,  H01J37/3255

    Abstract: In an embodiment, a plasma source includes a first electrode, configured for transfer of one or more plasma source gases through first perforations therein; an insulator, disposed in contact with the first electrode about a periphery of the first electrode; and a second electrode, disposed with a periphery of the second electrode against the insulator such that the first and second electrodes and the insulator define a plasma generation cavity. The second electrode is configured for movement of plasma products from the plasma generation cavity therethrough toward a process chamber. A power supply provides electrical power across the first and second electrodes to ignite a plasma with the one or more plasma source gases in the plasma generation cavity to produce the plasma products. One of the first electrode, the second electrode and the insulator includes a port that provides an optical signal from the plasma.

    Abstract translation: 在一个实施例中，等离子体源包括构造成通过其中的第一穿孔传送一个或多个等离子体源气体的第一电极; 绝缘体，设置成围绕第一电极的周边与第一电极接触; 以及第二电极，设置有第二电极的周边抵靠绝缘体，使得第一和第二电极和绝缘体限定等离子体产生腔。 第二电极被配置为使等离子体产物从等离子体产生腔通过其中朝向处理室移动。 电源提供穿过第一和第二电极的电力，以使等离子体与等离子体产生腔中的一个或多个等离子体源气体点燃以产生等离子体产物。 第一电极，第二电极和绝缘体之一包括提供来自等离子体的光信号的端口。

Patent Agency Ranking