公开(公告)号：US20240360590A1

公开(公告)日：2024-10-31

申请号：US18140508

申请日：2023-04-27

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar PANDEY ,  Ala MORADIAN ,  Lori WASHINGTON

IPC: C30B25/14 ,  C23C16/44 ,  C23C16/458 ,  C30B25/10 ,  C30B25/12

CPC classification number: C30B25/14 ,  C23C16/4412 ,  C23C16/4583 ,  C30B25/10 ,  C30B25/12

Abstract: Embodiments of the present disclosure relate to gas exhaust frames including pathways having size variations, for use in a substrate processing chamber, and related apparatus and methods. In one or more embodiments, a processing chamber includes a chamber body, and a window. The processing chamber includes one or more heat sources, a substrate support, a liner, and a pre-heat ring. The processing chamber includes one or more gas inlets, and a first set of exhaust pathways positioned on a first side of a reference plane. The first set of exhaust pathways have a first cross-sectional area gradient that increases along a first direction. The processing chamber includes a second set of exhaust pathways positioned on a second side of the reference plane. The second set of exhaust pathways have a second cross-sectional area gradient that increases along a second direction that is opposite of the first direction.

公开(公告)号：US20240360587A1

公开(公告)日：2024-10-31

申请号：US18223345

申请日：2023-07-18

Applicant: Applied Materials, Inc.

Inventor： Ala MORADIAN ,  Vishwas Kumar PANDEY ,  Lori D. WASHINGTON ,  Saurabh CHOPRA

IPC: C30B25/10 ,  C23C16/46

CPC classification number: C30B25/10 ,  C23C16/46

Abstract: The present disclosure relates to a radiation reflector assembly for use with a semiconductor processing chamber and a substrate processing system having the radiation reflector assembly. The radiation reflector assembly includes a shell body that includes an interior cylindrical wall; and a reflector disk that includes a center hole, a bottom reflective surface, and a top surface. The reflector disk is disposed within and spaced from the interior cylindrical wall in a manner that permits fluid to flow therebetween. The radiation reflector assembly includes an actuator coupled to the reflector disk, and the actuator is operable to axially displace the reflector disk relative to the shell body. The radiation reflector assembly includes an elongated tube extending through the center hole of the reflector disk. A method of processing a substrate with the radiation reflector assembly is also described.

公开(公告)号：US20240352618A1

公开(公告)日：2024-10-24

申请号：US18418531

申请日：2024-01-22

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar PANDEY ,  Hemantha Kumar RAJU ,  Ala MORADIAN ,  Anilkumar BODEPUDI

IPC: C30B25/10 ,  B08B7/00

CPC classification number: C30B25/10 ,  B08B7/0071

Abstract: A reflector for use in a semiconductor process chamber is provided including: a body; and a bottom plate connected to a lower portion of the body, the bottom plate having a bottom surface, a top surface, and one or more side surfaces connecting the bottom surface with the top surface. A cross section of the bottom plate that extends to opposing locations on the one or more side surfaces includes a center, the cross section is divided into two or more sectors that extend from the center of the cross section, and the cross section includes a cooling channel comprising an inlet and one or more outlets.

公开(公告)号：US20230407471A1

公开(公告)日：2023-12-21

申请号：US18205415

申请日：2023-06-02

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar PANDEY ,  Eric Kihara SHONO ,  Kartik SHAH ,  Christopher S. OLSEN ,  Agus Sofian TJANDRA ,  Tobin KAUFMAN-OSBORN ,  Taewan KIM ,  Hansel LO

IPC: C23C16/452 ,  C23C16/455 ,  B01F23/10 ,  B01F25/421 ,  H01J37/32 ,  B01F25/10 ,  B01F25/314 ,  B01F35/511 ,  H01L21/67

CPC classification number: C23C16/452 ,  C23C16/45548 ,  C23C16/45536 ,  B01F23/19 ,  B01F25/421 ,  C23C16/45561 ,  H01J37/3244 ,  B01F23/10 ,  B01F25/102 ,  B01F25/3141 ,  B01F25/31423 ,  B01F35/511 ,  H01J37/32357 ,  H01L21/67017

Abstract: The present disclosure generally provides methods of providing at least metastable radical molecular species and/or radical atomic species to a processing volume of a process chamber during an electronic device fabrication process, and apparatus related thereto. In one embodiment, the apparatus is a gas injection assembly disposed between a remote plasma source and a process chamber. The gas injection assembly includes a body, a dielectric liner disposed in the body that defines a gas mixing volume, a first flange to couple the gas injection assembly to a process chamber, and a second flange to couple the gas injection assembly to the remote plasma source. The gas injection assembly further includes one or more gas injection ports formed through the body and the liner.

公开(公告)号：US20220411927A1

公开(公告)日：2022-12-29

申请号：US17753524

申请日：2020-09-09

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar PANDEY ,  Christopher OLSEN ,  Rene GEORGE ,  Eric SHONO ,  Lara HAWRYLCHAK ,  Erika HANSEN ,  Tobin KAUFMAN-OSBORN ,  Hansel LO ,  Kartik SHAH

IPC: C23C16/455 ,  H01L21/67 ,  C23C16/40 ,  C23C16/52 ,  C23C16/458

Abstract: Embodiments described herein generally relate to a processing system and a method of delivering a reactant gas. The processing system includes a substrate support system, an injection cone, and an intake. The injection cone includes a linear rudder. The linear rudder is disposed such that the flow of reactant gas through the injection cone results in film growth on a specific portion of a substrate. The method includes flowing the gas through the injection cone and delivering the gas onto the substrate below. The localization of the reactant gas, allows for film growth on a specific portion of the substrate.

公开(公告)号：US20210272776A1

公开(公告)日：2021-09-02

申请号：US17324892

申请日：2021-05-19

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar PANDEY ,  Kartik Bhupendra SHAH ,  Christopher S. OLSEN ,  Agus Sofian TJANDRA ,  Hansel LO ,  Eric Kihara SHONO ,  Hemantha RAJU

IPC: H01J37/32 ,  C23C16/455

Abstract: Embodiments of the present disclosure generally relate to a processing chamber for conformal oxidation of high aspect ratio structures. The processing chamber includes a chamber body with a first side and a second side opposite the first side, and a flow assembly disposed in the first side. The flow assembly includes a flow divider to direct fluid flow away from a center of a substrate disposed in a processing region of the processing chamber. The flow divider includes a crescent shaped first side, a top, and a bottom. The processing chamber also includes a distributed pumping structure located adjacent to the second side. The flow assembly is designed to reduce flow constriction of the radicals, leading to increased radical concentration and flux.

公开(公告)号：US20250125164A1

公开(公告)日：2025-04-17

申请号：US18487895

申请日：2023-10-16

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar PANDEY ,  Ala MORADIAN

IPC: H01L21/67 ,  G01D11/24 ,  G01K1/12

Abstract: The present disclosure relates to heat transfer jackets and sensor assemblies, and related methods and processing chambers, for semiconductor manufacturing. In one or more embodiments, a jacket applicable for semiconductor manufacturing includes one or more outer walls bounding a plurality of fluid channels, and an inner wall at least partially surrounded by at least one of the plurality of fluid channels. The inner wall at least partially defines a receptacle opening. The jacket includes a fluid inlet formed in at least one of the one or more outer walls, a fluid outlet formed in at least one of the one or more outer walls, and a plurality of partition walls separating the plurality of fluid channels. At least one of the plurality of partition walls intersects at least one of the one or more outer walls.

公开(公告)号：US20250122624A1

公开(公告)日：2025-04-17

申请号：US18484767

申请日：2023-10-11

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar PANDEY ,  Ala MORADIAN ,  Lori D. WASHINGTON

IPC: C23C16/458 ,  C23C16/44

Abstract: A process chamber including: a chamber body enclosing an interior volume; a substrate support disposed in the interior volume that includes a lower interior volume below the substrate support and an upper interior volume above the substrate support; a first purge gas line configured to provide a first flow of purge gas to the lower interior volume; and a gas flow ring disposed around an outer edge of the substrate support, the gas flow ring comprising: a ring-shaped body; a top surface; a bottom surface; a first overlapping portion extending from a first inner sidewall of the ring-shaped body; and a second overlapping portion extending from a second inner sidewall of the ring-shaped body. The first overlapping portion is spaced apart from and overlies the second overlapping portion to form a gas flow channel that extends from the bottom surface to the top surface of the gas flow ring.

公开(公告)号：US20240141493A1

公开(公告)日：2024-05-02

申请号：US18223183

申请日：2023-07-18

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar PANDEY ,  Ala MORADIAN ,  Lori D. WASHINGTON ,  Shu-Kwan LAU

IPC: C23C16/458 ,  C23C16/46

CPC classification number: C23C16/4581 ,  C23C16/46

Abstract: In one embodiment, a processing chamber, suitable for use in semiconductor processing, includes a chamber body enclosing an interior volume. A susceptor is disposed in the interior volume, and the interior volume includes a purge interior volume below the susceptor and a process volume above the substrate support. A liner is disposed radially outward of the susceptor. The processing chamber also includes a preheat ring. The preheat ring is configured to engage the susceptor when the susceptor is an elevated processing position and to engage the liner when the susceptor is in a lowered loading/unloading position.

公开(公告)号：US20240110278A1

公开(公告)日：2024-04-04

申请号：US17955785

申请日：2022-09-29

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar PANDEY ,  Ala MORADIAN ,  Zhepeng CONG

IPC: C23C16/44 ,  H01L21/67

CPC classification number: C23C16/4412 ,  H01L21/67017

Abstract: A processing chamber is disclosed and includes a chamber body. The chamber body has a first side, a second side opposite the first side, a window assembly, and a base. The first and second side, the window assembly and the base define a thermal processing region. A flow assembly is disposed adjacent the first side and configured to introduce a processing gas into the thermal processing region. An exhaust slit assembly is disposed adjacent the second side. The exhaust slit assembly has an opening exposed to the thermal processing region. The opening having a center and an outer edge of the opening. The center of the opening and edge of the opening vertically defined between the window assembly and the base. Wherein an outer height at the edge of the opening is at least 30% larger in a vertical direction than a center height at the center of the opening.