公开(公告)号：US20240413254A1

公开(公告)日：2024-12-12

申请号：US18703192

申请日：2022-10-26

Applicant: First Solar, Inc.

Inventor： James Becker ,  William Huber ,  Chungho Lee ,  Jialiu Ma ,  Dirk Weiss ,  Gang Xiong

IPC: H01L31/0216 ,  H01L31/055

Abstract: Photovoltaic devices having bifacial enhancement are described herein.

公开(公告)号：US20230082990A1

公开(公告)日：2023-03-16

申请号：US17986747

申请日：2022-11-14

Applicant: First Solar, Inc.

Inventor： Hongbo Cao ,  Sachit Grover ,  William Hullinger Huber ,  Xiaoping Li ,  Dingyuan Lu ,  Roger Malik ,  Hongying Peng ,  Joseph John Shiang ,  Qianqian Xin ,  Gang Xiong

IPC: H01L31/0296 ,  H01L31/073 ,  H01L31/18

Abstract: According to the embodiments provided herein, a photovoltaic device can include an absorber layer. The absorber layer can be doped p-type with a Group V dopant and can have a carrier concentration of the Group V dopant greater than 4×1015 cm−3. The absorber layer can include oxygen in a central region of the absorber layer. The absorber layer can include an alkali metal in the central region of the absorber layer. Methods for carrier activation can include exposing an absorber layer to an annealing compound in a reducing environment. The annealing compound can include cadmium chloride and an alkali metal chloride.

公开(公告)号：US20200035844A1

公开(公告)日：2020-01-30

申请号：US16488808

申请日：2018-02-27

Applicant: First Solar, Inc.

Inventor： Sachit Grover ,  Chungho Lee ,  Xiaoping Li ,  Dingyuan Lu ,  Roger Malik ,  Gang Xiong

IPC: H01L31/0296 ,  H01L31/0304 ,  H01L31/05 ,  H01L31/18

Abstract: According to the embodiments provided herein, a method for forming a photovoltaic device can include depositing a plurality of semiconductor layers. The plurality of semiconductor layers can include a doped layer that is doped with a group V dopant. The doped layer can include cadmium selenide or cadmium telluride. The method can include annealing the plurality of semiconductor layers to form an absorber layer.

公开(公告)号：US20170288073A1

公开(公告)日：2017-10-05

申请号：US15619674

申请日：2017-06-12

Applicant: First Solar, Inc.

Inventor： Benyamin Buller ,  Markus Gloeckler ,  Akhlesh Gupta ,  Rick Powell ,  Rui Shao ,  Gang Xiong ,  Ming Lun Yu ,  Zhibo Zhao

IPC: H01L31/0224 ,  H01L31/073 ,  H01L31/0749

CPC classification number: H01L31/022425 ,  H01L31/073 ,  H01L31/0749 ,  Y02E10/541 ,  Y02E10/543 ,  Y02P70/521

Abstract: Methods and devices are described for a photovoltaic device. The photovoltaic device includes a glass substrate, a semiconductor absorber layer formed over the glass substrate, a metal back contact layer formed over the semiconductor absorber layer, and a p-type back contact buffer layer formed from one of MnTe, Cd1-xMnxTe, and SnTe, the buffer layer disposed between the semiconductor absorber layer and the metal back contact layer.

公开(公告)号：US20140273407A1

公开(公告)日：2014-09-18

申请号：US14211658

申请日：2014-03-14

Applicant: First Solar, Inc.

Inventor： Scott Christensen ,  Scott Jewhurst ,  Minh Huu Le ,  Haifan Liang ,  Hao Lin ,  Wei Liu ,  Minh Anh Nguyen ,  Zhi Wen Sun ,  Gang Xiong

IPC: H01L31/18

CPC classification number: H01L31/1868 ,  H01L31/0296 ,  Y02E10/50 ,  Y02P70/521

Abstract: Methods and compositions for the surface cleaning and passivation of CdTe substrates usable in solar cells are disclosed. In some embodiments amine-containing chelators are used and in other embodiments phosphorus-containing chelators are used.

Abstract translation: 公开了用于太阳能电池中的CdTe基板的表面清洁和钝化的方法和组合物。 在一些实施方案中，使用含胺螯合剂，在其它实施方案中使用含磷螯合剂。

公开(公告)号：US20130298992A1

公开(公告)日：2013-11-14

申请号：US13945583

申请日：2013-07-18

Applicant: First Solar, Inc.

Inventor： Gang Xiong ,  Rick C. Powell ,  Aaron Roggelin ,  Kuntal Kumar ,  Arnold Allenic ,  Kenneth M. Ring ,  Charles E. Wickersham

IPC: H01L31/0296

CPC classification number: H01L31/02963 ,  H01L31/073 ,  Y02E10/543 ,  Y02P70/521

Abstract: A method to improve CdTe-based photovoltaic device efficiency is disclosed. The CdTe-based photovoltaic device can include oxygen or silicon in semiconductor layers.

Abstract translation: 公开了一种改善CdTe基光伏器件效率的方法。 CdTe基光伏器件可以包括半导体层中的氧或硅。

公开(公告)号：US11342471B2

公开(公告)日：2022-05-24

申请号：US16488808

申请日：2018-02-27

Applicant: First Solar, Inc.

Inventor： Sachit Grover ,  Chungho Lee ,  Xiaoping Li ,  Dingyuan Lu ,  Roger Malik ,  Gang Xiong

IPC: H01L31/0296 ,  H01L31/05 ,  H01L31/18 ,  H01L31/0304

Abstract: According to the embodiments provided herein, a method for forming a photovoltaic device can include depositing a plurality of semiconductor layers. The plurality of semiconductor layers can include a doped layer that is doped with a group V dopant. The doped layer can include cadmium selenide or cadmium telluride. The method can include annealing the plurality of semiconductor layers to form an absorber layer.

公开(公告)号：US11158749B2

公开(公告)日：2021-10-26

申请号：US16488275

申请日：2018-02-22

Applicant: First Solar, Inc.

Inventor： Sachit Grover ,  Stuart Irvine ,  Xiaoping Li ,  Roger Malik ,  Shahram Seyedmohammadi ,  Gang Xiong ,  Wei Zhang

IPC: H01L31/18 ,  H01L31/0296

Abstract: Provided are structures and methods for doping polycrystalline thin film semiconductor materials in photovoltaic devices. Embodiments include methods for forming and treating a photovoltaic semiconductor absorber layer.

公开(公告)号：US20180323332A1

公开(公告)日：2018-11-08

申请号：US16040173

申请日：2018-07-19

Applicant: First Solar, Inc.

Inventor： John Barden ,  Changming Jin ,  Feng Liao ,  Rick C. Powell ,  Gang Xiong

IPC: H01L31/18 ,  C23C14/58 ,  C23C14/02 ,  H01L21/677 ,  H01L21/67 ,  C23C14/22 ,  C23C14/06

CPC classification number: H01L31/18 ,  C23C14/024 ,  C23C14/0629 ,  C23C14/228 ,  C23C14/58 ,  H01L21/67173 ,  H01L21/6776 ,  H01L31/1828 ,  Y02E10/543 ,  Y02P70/521

Abstract: A vapor transport deposition system and method that includes a vaporizer and distributor unit and at least one auxiliary process unit for integrating thin-film layer deposition with one or more pre- or post-deposition processes.

公开(公告)号：US09147792B2

公开(公告)日：2015-09-29

申请号：US13897915

申请日：2013-05-20

Applicant: First Solar, Inc.

Inventor： Scott Christensen ,  Rick C. Powell ,  Gang Xiong

IPC: H01L21/00 ,  H01L31/18 ,  H01L31/0296 ,  H01L31/073

CPC classification number: H01L31/0296 ,  H01L31/022441 ,  H01L31/056 ,  H01L31/073 ,  H01L31/1828 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/52 ,  Y02E10/543 ,  Y02P70/521

Abstract: A method of manufacturing a photovoltaic device including depositing a cadmium telluride layer onto a substrate; treating the cadmium telluride layer with a compound comprising chlorine and an element from Groups 1-11, zinc, mercury, or copernicium or a combination thereof; and annealing the cadmium telluride layer. A chloride-treated photovoltaic device.

Abstract translation: 一种制造光伏器件的方法，包括将碲化镉层沉积到衬底上; 用包含氯和1-11，锌，汞或哥打尼碱或其组合的元素的化合物处理碲化镉层; 并对碲化镉层进行退火。 氯化物处理的光伏器件。