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    Diagnosis of electrical failures in capacitive sensors
    11.
    发明授权
    Diagnosis of electrical failures in capacitive sensors 有权

    公开(公告)号：US11733060B2

    公开(公告)日：2023-08-22

    申请号：US17171283

    申请日：2021-02-09

    Applicant: Infineon Technologies AG

    Inventor： Dan-Ioan-Dumitru Stoica ,  Constantin Crisu ,  Victor Popescu-Stroe ,  Bernhard Winkler

    IPC: G01D3/08 ,  G01D5/244 ,  G01D5/241 ,  B81B3/00 ,  G01L27/00

    CPC classification number: G01D3/08 ,  B81B3/0018 ,  G01D5/241 ,  G01D5/24466 ,  G01L27/007 ,  B81B2201/0292

    Abstract: A capacitive sensor includes a first conductive structure; a second conductive structure movable relative to the first conductive structure in response to an external force acting thereon, wherein the first and the second conductive structures form a first capacitor having a first capacitance that changes with a change in a distance between the first conductive structure and second conductive structure, wherein the first capacitance is representative of the external force; and a diagnostic circuit configured to detect a first leakage current in the capacitive sensor by measuring an first electrical parameter that is affected by the first leakage current and comparing the measured first electrical parameter to a first predetermined error threshold, wherein the diagnostic circuit is further configured to generate a first error signal in response to the measured first electrical parameter being greater than the first predetermined error threshold.

    METHODS FOR PRODUCING A CAVITY WITHIN A SEMICONDUCTOR SUBSTRATE
    13.
    发明申请
    METHODS FOR PRODUCING A CAVITY WITHIN A SEMICONDUCTOR SUBSTRATE 审中-公开
    用于在半导体衬底中制造空穴的方法

    公开(公告)号：US20150368097A1

    公开(公告)日：2015-12-24

    申请号：US14838988

    申请日：2015-08-28

    Applicant: Infineon Technologies AG

    Inventor： Andreas Behrendt ,  Kai-Alexander Schreiber ,  Sokratis Sgouridis ,  Martin Zgaga ,  Bernhard Winkler

    IPC: B81C1/00 ,  B81B3/00

    CPC classification number: B81C1/00531 ,  B81B3/0021 ,  B81B3/0094 ,  B81B2203/033 ,  B81C1/00619 ,  B81C1/00626 ,  B81C2201/0139 ,  H01L21/3063

    Abstract: A method for producing at least one cavity within a semiconductor substrate includes dry etching the semiconductor substrate from a surface of the semiconductor substrate at at least one intended cavity location in order to obtain at least one provisional cavity. The method includes depositing a protective material with regard to a subsequent wet-etching process at the surface of the semiconductor substrate and at cavity surfaces of the at least one provisional cavity. Furthermore, the method includes removing the protective material at least at a section of a bottom of the at least one provisional cavity in order to expose the semiconductor substrate. This is followed by electrochemically etching the semiconductor substrate at the exposed section of the bottom of the at least one provisional cavity. A method for producing a micromechanical sensor system in which this type of cavity formation is used and a corresponding MEMS are also disclosed.

    Abstract translation: 一种用于在半导体衬底内制造至少一个空腔的方法包括：在半导体衬底的表面在至少一个预定的腔位置干蚀刻半导体衬底，以便获得至少一个临时空腔。 该方法包括在半导体衬底的表面和至少一个临时空腔的空腔表面处沉积关于随后的湿法蚀刻工艺的保护材料。 此外，该方法包括至少在至少一个临时空腔的底部的一部分处去除保护材料以暴露半导体衬底。 接着在至少一个临时腔的底部的暴露部分对半导体衬底进行电化学蚀刻。 还公开了使用这种类型的空腔形成和相应的MEMS的微机械传感器系统的制造方法。

    Integration of stress decoupling and particle filter on a single wafer or in combination with a waferlevel package
    18.
    发明授权
    Integration of stress decoupling and particle filter on a single wafer or in combination with a waferlevel package 有权

    公开(公告)号：US10899604B2

    公开(公告)日：2021-01-26

    申请号：US16387918

    申请日：2019-04-18

    Applicant: Infineon Technologies AG

    Inventor： Florian Brandl ,  Christian Geissler ,  Robert Gruenberger ,  Claus Waechter ,  Bernhard Winkler

    IPC: B81B7/00 ,  B81C1/00 ,  G01L1/18 ,  G01L1/14

    Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, where the stress-sensitive sensor is sensitive to mechanical stress; a stress-decoupling trench that has a vertical extension that extends from the first surface into the substrate, where the stress-decoupling trench vertically extends partially into the substrate towards the second surface although not completely to the second surface; and a plurality of particle filter trenches that vertically extend from the second surface into the substrate, wherein each of the plurality of particle filter trenches have a longitudinal extension that extends orthogonal to the vertical extension of the stress-decoupling trench.

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