公开(公告)号：US20220069156A1

公开(公告)日：2022-03-03

申请号：US17461159

申请日：2021-08-30

Applicant: Infineon Technologies AG

Inventor： Andre Roeth ,  Henning Feick ,  Heiko Froehlich ,  Thoralf Kautzsch ,  Olga Khvostikova ,  Stefano Parascandola ,  Thomas Popp ,  Maik Stegemann ,  Mirko Vogt

IPC: H01L31/18 ,  H01L31/105 ,  H01L31/028 ,  H01L21/02

Abstract: A method of generating a germanium structure includes performing an epitaxial depositing process on an assembly of a silicon substrate and an oxide layer, wherein one or more trenches in the oxide layer expose surface portions of the silicon substrate. The epitaxial depositing process includes depositing germanium onto the assembly during a first phase, performing an etch process during a second phase following the first phase in order to remove germanium from the oxide layer, and repeating the first and second phases. A germanium crystal is grown in the trench or trenches. An optical device includes a light-incidence surface formed by a raw textured surface of a germanium structure obtained by an epitaxial depositing process without processing the surface of the germanium structure after the epitaxial process.

公开(公告)号：US10571681B2

公开(公告)日：2020-02-25

申请号：US15682671

申请日：2017-08-22

Applicant: Infineon Technologies AG

Inventor： Roland Meier ,  Klemens Pruegl ,  Bernhard Winkler ,  Thomas Popp ,  Raimund Foerg

IPC: G02B26/00 ,  B81C1/00

Abstract: Embodiments relate to microelectromechanical systems (MEMS) and more particularly to membrane structures comprising pixels for use in, e.g., display devices. In embodiments, a membrane structure comprises a monocrystalline silicon membrane above a cavity formed over a silicon substrate. The membrane structure can comprise a light interference structure that, depending upon a variable distance between the membrane and the substrate, transmits or reflects different wavelengths of light. Related devices, systems and methods are also disclosed.

公开(公告)号：US09941432B2

公开(公告)日：2018-04-10

申请号：US15167292

申请日：2016-05-27

Applicant: Infineon Technologies AG

Inventor： Stefan Clara ,  Thomas Grille ,  Ursula Hedenig ,  Peter Irsigler ,  Bernhard Jakoby ,  Ventsislav M. Lavchiev ,  Thomas Ostermann ,  Thomas Popp

IPC: H01L31/18 ,  H01L31/0352 ,  H01L33/06

CPC classification number: H01L31/035254 ,  H01L31/035209 ,  H01L31/035218 ,  H01L31/173 ,  H01L31/1812 ,  H01L31/1864 ,  H01L33/06 ,  H01L2933/0033

Abstract: A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a first semiconductor layer structure. The quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 8×1011 quantum structures per cm2. The plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 μm and 10 μm or to absorb light with a light absorption maximum at a wavelength of between 2 μm and 10 μm.

公开(公告)号：US20170371148A1

公开(公告)日：2017-12-28

申请号：US15682671

申请日：2017-08-22

Applicant: Infineon Technologies AG

Inventor： Roland Meier ,  Klemens Pruegl ,  Bernhard Winkler ,  Thomas Popp ,  Raimund Foerg

IPC: G02B26/00 ,  B81C1/00

CPC classification number: G02B26/001 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2201/047 ,  B81C1/00158 ,  B81C1/00476 ,  B81C1/00539 ,  G02B26/007

Abstract: Embodiments relate to microelectromechanical systems (MEMS) and more particularly to membrane structures comprising pixels for use in, e.g., display devices. In embodiments, a membrane structure comprises a monocrystalline silicon membrane above a cavity formed over a silicon substrate. The membrane structure can comprise a light interference structure that, depending upon a variable distance between the membrane and the substrate, transmits or reflects different wavelengths of light. Related devices, systems and methods are also disclosed.

公开(公告)号：US20150362722A1

公开(公告)日：2015-12-17

申请号：US14722552

申请日：2015-05-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Roland Meier ,  Klemens Pruegl ,  Bernhard Winkler ,  Thomas Popp ,  Raimund Foerg

IPC: G02B26/00 ,  B81C1/00

CPC classification number: G02B26/001 ,  B81C1/00158 ,  B81C1/00539 ,  G02B26/007

Abstract: Embodiments relate to microelectromechanical systems (MEMS) and more particularly to membrane structures comprising pixels for use in, e.g., display devices. In embodiments, a membrane structure comprises a monocrystalline silicon membrane above a cavity formed over a silicon substrate. The membrane structure can comprise a light interference structure that, depending upon a variable distance between the membrane and the substrate, transmits or reflects different wavelengths of light. Related devices, systems and methods are also disclosed.

Abstract translation: 实施例涉及微机电系统（MEMS），更具体地涉及包括用于例如显示装置的像素的膜结构。 在实施例中，膜结构包括在硅衬底上形成的腔上方的单晶硅膜。 膜结构可以包括光干涉结构，其根据膜和衬底之间的可变距离透射或反射不同波长的光。 还公开了相关设备，系统和方法。