公开(公告)号：US09552966B2

公开(公告)日：2017-01-24

申请号：US14364434

申请日：2012-12-05

Applicant: Tokyo Electron Limited

Inventor： Tomohito Komatsu ,  Taro Ikeda ,  Shigeru Kasai

IPC: H01J37/32 ,  H05H1/46

CPC classification number: H01J37/3222 ,  H01J37/32229 ,  H01J37/3244 ,  H01J37/32449 ,  H01J2237/006 ,  H05H1/46 ,  H05H2001/4615 ,  H05H2001/463

Abstract: An antenna for plasma generation radiates a microwave transmitted through a coaxial waveguide into a processing chamber and propagates the microwave on a metal surface of the processing chamber to convert gas into surface wave plasma. The antenna includes a gas flow path for passing the gas through the antenna, a plurality of gas holes that communicate with the gas flow path and introduce the gas into the processing chamber, and a plurality of slots that are separated from the gas flow path and penetrate through the gas flow path. The slots pass the microwave transmitted through the coaxial waveguide and a slow-wave plate to the processing chamber. A first space between portions of adjacent slots penetrating through the gas flow path is arranged to be wider than a second space between portions of the adjacent slots opening out to a plasma generation space of the processing chamber.

Abstract translation: 用于等离子体生成的天线将通过同轴波导传输的微波辐射到处理室中，并将微波传播到处理室的金属表面上，以将气体转换成表面波等离子体。 天线包括用于使气体通过天线的气体流动通道，与气体流动路径连通并将气体引入处理室的多个气体孔，以及与气体流动路径分离的多个槽， 穿透气体流路。 这些槽将通过同轴波导传送的微波和慢波板通过处理室。 穿过气体流动路径的相邻槽的部分之间的第一空间布置成比通过处理室的等离子体产生空间的相邻槽的部分之间的第二空间宽。

公开(公告)号：US20150212127A1

公开(公告)日：2015-07-30

申请号：US14413170

申请日：2013-06-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro Ikeda ,  Yutaka Fujino ,  Hikaru Adachi ,  Hiroyuki Miyashita ,  Yuki Osada ,  Nobuhiko Yamamoto

IPC: G01R27/06 ,  G01R27/28

CPC classification number: G01R27/06 ,  G01R27/28 ,  H01J37/321 ,  H01J37/32192 ,  H01J37/32926 ,  H05H1/46 ,  H05H2001/463 ,  H05H2001/4682

Abstract: A plasma processing apparatus (1) includes a processing container (2) and a microwave introduction device (5) having a plurality of microwave introduction modules (61). A microwave is introduced for each of the plurality of microwave introduction modules (61), and S-parameters for each of combinations of the plurality of microwave introduction modules (61) are obtained based on the introduced microwave and a reflected microwave reflected from the processing container (2) into the plurality of microwave introduction modules (61).

Abstract translation: 等离子体处理装置（1）包括具有多个微波引入模块（61）的处理容器（2）和微波引入装置（5）。 为多个微波引入模块（61）中的每一个引入微波，并且基于引入的微波和从处理反射的反射微波获得多个微波引入模块（61）的每个组合的S参数 容器（2）插入到多个微波引入模块（61）中。

公开(公告)号：US12283465B2

公开(公告)日：2025-04-22

申请号：US18008008

申请日：2021-03-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Eiki Kamata ,  Taro Ikeda ,  Satoru Kawakami ,  Takumi Kabe

IPC: H01J37/00 ,  H01J37/32 ,  H01L21/304

Abstract: This plasma processing apparatus for performing plasma processing on an end part of a substrate includes a processing container, a substrate supporting member configured to support a portion of the substrate and to which a high frequency power is applied, at least a side of the substrate supporting member being composed of a dielectric, an opposing dielectric member composed of a dielectric and disposed to oppose the substrate supporting member, and a gas supply configured to supply a processing gas for generating plasma on at least the end part of the substrate. The plasma processing apparatus further includes a side ground electrode provided at a side of the substrate so as to be close to the substrate to such an extent that an electrical coupling is formed between an end surface of the substrate and the side ground electrode, the side ground electrode having a ground potential.

公开(公告)号：US12237157B2

公开(公告)日：2025-02-25

申请号：US17893621

申请日：2022-08-23

Applicant: Tokyo Electron Limited

Inventor： Eiki Kamata ,  Mikio Sato ,  Taro Ikeda ,  Mitsutoshi Ashida

IPC: H01J37/32

Abstract: Measuring a plasma state using a probe device in the case of performing plasma processing on a substrate by introducing process gas into a processing container accommodating the substrate and by producing pulsed plasma using an electromagnetic wave pulse obtained by processing an electromagnetic wave generated from an electromagnetic wave oscillator using a pulsing device. An AC voltage to the pulsed plasma is applied via the probe device; transmitting a signal from the pulsed plasma based on the AC voltage via the probe device and measuring data including a current value; and obtaining a state of the pulsed plasma by analyzing the measured data. The frequency of the AC voltage deviates from a frequency of the electromagnetic wave pulse so that the number of data required for the measurement of the pulsed plasma within one cycle of the electromagnetic wave pulse is obtained within allowable time.

公开(公告)号：US11784085B2

公开(公告)日：2023-10-10

申请号：US16815276

申请日：2020-03-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro Ikeda ,  Eiki Kamata

IPC: H01L21/687 ,  H01L21/3065 ,  H01L21/67

CPC classification number: H01L21/68714 ,  H01L21/3065 ,  H01L21/67103 ,  H01L21/67248

Abstract: A plasma processing apparatus includes a stage provided in a chamber and having a heater therein, the stage being configured to place a substrate thereon, and an annular member provided around the stage to be spaced apart therefrom and formed of a dielectric material. At least one annular groove is formed in a lower surface of the annular member in a radial direction.

公开(公告)号：US11508556B2

公开(公告)日：2022-11-22

申请号：US15981246

申请日：2018-05-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro Ikeda ,  Tomohito Komatsu ,  Jun Nakagomi ,  Kei Nagayosi

IPC: H01J37/32 ,  C23C16/511 ,  C23C16/455 ,  H05H1/46

Abstract: A plasma processing apparatus includes a microwave introducing module provided at a ceiling portion of a processing chamber and configured to introduce a microwave for generating plasma of a gas into the processing chamber; and a plurality of gas supply holes formed at the ceiling portion of the processing chamber and configured to introduce the gas into a plasma processing space. Each of the plurality of gas supply holes includes a fine hole and a cavity that is expanded from the fine hole and opened to the plasma processing space. A diameter of the cavity on the plasma processing space side is 3 mm or more and is ⅛ or less of a wavelength of a surface wave of a microwave in the plasma.

公开(公告)号：US11476088B2

公开(公告)日：2022-10-18

申请号：US17144647

申请日：2021-01-08

Applicant: Tokyo Electron Limited

Inventor： Eiki Kamata ,  Taro Ikeda ,  Mikio Sato ,  Nobuhiko Yamamoto

IPC: H01J37/32 ,  H05H1/46 ,  H01Q1/52

Abstract: An array antenna radiates an electromagnetic wave into a chamber of a plasma processing apparatus. The array antenna includes antennas and coupling prevention elements arranged at intervals between the antennas. Each of the coupling prevention elements includes a first member connected to a ceiling wall which is a ground surface in the chamber and a second member connected to a tip end of the first member or a vicinity of the tip end of the first member.

公开(公告)号：US11355326B2

公开(公告)日：2022-06-07

申请号：US16942158

申请日：2020-07-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro Ikeda ,  Mikio Sato ,  Eiki Kamata

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a processing chamber, a conductive annular member, a microwave radiating mechanism and a plasma detector. The processing chamber has a ceiling plate with an opening. The conductive annular member is disposed at the opening while being insulated from the ceiling plate. The microwave radiating mechanism is disposed on the ceiling plate to be coaxial with a center of the conductive annular member and configured to radiate microwaves into the processing chamber. Further, a plasma detector is connected to the conductive annular member and configured to detect a state of generated plasma.

公开(公告)号：US10804078B2

公开(公告)日：2020-10-13

申请号：US15488232

申请日：2017-04-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yutaka Fujino ,  Tomohito Komatsu ,  Taro Ikeda ,  Jun Nakagomi ,  Takeo Wakutsu

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a chamber, a mounting table for mounting thereon a target object in the chamber, a plasma source configured to introduce microwaves into the chamber through a ceiling wall of the chamber and generate a surface wave plasma in the chamber, a first gas introduction unit for introducing a first gas into the chamber from the ceiling wall, and a second gas introduction unit for introducing a second gas into the chamber from a location between the ceiling wall and the mounting table. The second gas introduction unit includes a ring-shaped member having a plurality of gas injection holes and provided at a predetermined height position between the ceiling wall and the mounting table, and a leg part which connects the ceiling wall and the ring-shaped member. The second gas is supplied to the ring-shaped member through the leg part.

公开(公告)号：US20180301388A1

公开(公告)日：2018-10-18

申请号：US15947994

申请日：2018-04-09

Applicant: Tokyo Electron Limited

Inventor： Taro Ikeda ,  Yuki Osada

IPC: H01L21/66 ,  G01J3/443 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/02 ,  C23C16/455

Abstract: Provided is a plasma processing apparatus including a microwave radiating mechanism configured to radiate microwaves output from a microwave output unit into a processing container. The microwave radiating mechanism includes: an antenna configured to radiate the microwaves; a dielectric member configured to transmit the microwaves radiated from the antenna, and form an electric field for generating surface wave plasma by the microwaves; a sensor provided in the microwave radiating mechanism or adjacent to the microwave radiating mechanism, and configured to monitor electron temperature of the generated plasma; and a controller configured to determine a plasma ignition state based on the electron temperature of the plasma monitored by the sensor.