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    Method for manufacturing microstructure
    11.
    发明授权
    Method for manufacturing microstructure 有权
    微结构制造方法

    公开(公告)号：US07033515B2

    公开(公告)日：2006-04-25

    申请号：US10686764

    申请日：2003-10-17

    Applicant: Norinao Kouma ,  Yoshihiro Mizuno ,  Osamu Tsuboi ,  Hisao Okuda ,  Hiromitsu Soneda ,  Satoshi Ueda ,  Ippei Sawaki ,  Yoshitaka Nakamura

    Inventor： Norinao Kouma ,  Yoshihiro Mizuno ,  Osamu Tsuboi ,  Hisao Okuda ,  Hiromitsu Soneda ,  Satoshi Ueda ,  Ippei Sawaki ,  Yoshitaka Nakamura

    IPC: H01L21/00

    CPC classification number: B81C1/00182 ,  B81B2201/0235 ,  B81B2201/033 ,  B81B2201/042 ,  B81C2201/014 ,  B81C2201/0174 ,  G02B26/0841

    Abstract: A method is for manufacturing a microstructure having a thin-walled portion with use of a material substrate. The material substrate has a laminated structure which includes a first conductor layer 101, a second conductor layer 102, a third conductor layer 103, a first insulating layer 104 interposed between the first conductor layer and the second conductor layer, and a second insulating layer 105 interposed between the second conductor layer and the third conductor layer. The first insulating layer is patterned to have a first masking part for covering a thin-wall forming region of the second conductor layer. The second insulating layer is patterned to have a second masking part for covering the thin-wall forming region of the second conductor layer. The method includes forming the thin-walled portion in the second conductor portion by etching the material substrate from the first conductor layer down to the second insulating layer via a mask pattern 58 including a non-masking region corresponding to the thin-wall forming region of the second conductor layer.

    Abstract translation: 一种使用材料基板制造具有薄壁部分的微结构的方法。 材料基板具有包括第一导体层101，第二导体层102，第三导体层103，插入在第一导体层和第二导体层之间的第一绝缘层104和第二绝缘层105的层叠结构 插入在第二导体层和第三导体层之间。 第一绝缘层被图案化以具有用于覆盖第二导体层的薄壁形成区域的第一掩模部分。 图案化第二绝缘层以具有用于覆盖第二导体层的薄壁形成区域的第二掩模部分。 该方法包括：通过掩模图案58将材料基板从第一导体层蚀刻到第二绝缘层，从而在第二导体部分中形成薄壁部分，掩模图案58包括对应于薄壁形成区域的非屏蔽区域 第二导体层。

    Method for manufacturing microstructure
    12.
    发明申请
    Method for manufacturing microstructure 有权
    微结构制造方法

    公开(公告)号：US20040232107A1

    公开(公告)日：2004-11-25

    申请号：US10686764

    申请日：2003-10-17

    Applicant: FUJITSU LIMITED ,  FUJITSU MEDIA DEVICES LIMITED

    Inventor： Norinao Kouma ,  Yoshihiro Mizuno ,  Osamu Tsuboi ,  Hisao Okuda ,  Hiromitsu Soneda ,  Satoshi Ueda ,  Ippei Sawaki ,  Yoshitaka Nakamura

    IPC: B44C001/22

    CPC classification number: B81C1/00182 ,  B81B2201/0235 ,  B81B2201/033 ,  B81B2201/042 ,  B81C2201/014 ,  B81C2201/0174 ,  G02B26/0841

    Abstract: A method is for manufacturing a microstructure having a thin-walled portion with use of a material substrate. The material substrate has a laminated structure which includes a first conductor layer 101, a second conductor layer 102, a third conductor layer 103, a first insulating layer 104 interposed between the first conductor layer and the second conductor layer, and a second insulating layer 105 interposed between the second conductor layer and the third conductor layer. The first insulating layer is patterned to have a first masking part for covering a thin-wall forming region of the second conductor layer. The second insulating layer is patterned to have a second masking part for covering the thin-wall forming region of the second conductor layer. The method includes forming the thin-walled portion in the second conductor portion by etching the material substrate from the first conductor layer down to the second insulating layer via a mask pattern 58 including a non-masking region corresponding to the thin-wall forming region of the second conductor layer.

    Abstract translation: 一种使用材料基板制造具有薄壁部分的微结构的方法。 材料基板具有包括第一导体层101，第二导体层102，第三导体层103，插入在第一导体层和第二导体层之间的第一绝缘层104和第二绝缘层105的层叠结构 插入在第二导体层和第三导体层之间。 第一绝缘层被图案化以具有用于覆盖第二导体层的薄壁形成区域的第一掩模部分。 图案化第二绝缘层以具有用于覆盖第二导体层的薄壁形成区域的第二掩模部分。 该方法包括：通过掩模图案58将材料基板从第一导体层蚀刻到第二绝缘层，从而在第二导体部分中形成薄壁部分，掩模图案58包括对应于薄壁形成区域的非屏蔽区域 第二导体层。

    TILTED MEMS
    17.
    发明申请
    TILTED MEMS 有权
    倾斜MEMS

    公开(公告)号：US20150323456A1

    公开(公告)日：2015-11-12

    申请号：US14330723

    申请日：2014-07-14

    Applicant: Apple Inc.

    Inventor： Janhavi S. Agashe ,  Jae H. Lee

    IPC: G01N21/55 ,  B81C1/00 ,  G01N21/01

    CPC classification number: H04R23/008 ,  B81C1/00158 ,  B81C1/00341 ,  B81C2201/0174 ,  B81C2203/0785 ,  G01N21/01 ,  G01N21/4788 ,  G01N21/55 ,  G01N2201/0612 ,  H04R1/04 ,  H04R2201/003 ,  Y10T29/413

    Abstract: A micro-electro-mechanical system (MEMS) optical sensor, method of detecting sound using the MEMS optical sensor and method of manufacturing. The MEMS optical sensor including a substrate having a base portion and a vertically extending support portion. The sensor further including a top plate having a compliant membrane configured to vibrate in response to acoustic waves, the top plate connected to the support portion and having a reflective surface. The sensor also includes a back plate connected to the support portion, the back plate having a grating portion positioned below the reflective surface portion and a base plate connected to the support portion at a position below the back plate. A light emitter, a light detector and circuitry operable to tilt the top plate and the back plate with respect to the base plate so as to direct the reflected laser light toward the light detector are further provided.

    Abstract translation: 微机电系统（MEMS）光学传感器，使用MEMS光学传感器检测声音的方法和制造方法。 MEMS光学传感器包括具有基部和垂直延伸的支撑部的基板。 所述传感器还包括顶板，所述顶板具有构造为响应于声波而振动的柔性膜，所述顶板连接到所述支撑部分并且具有反射表面。 传感器还包括连接到支撑部分的背板，背板具有位于反射表面部分下方的光栅部分和在背板下方的位置处连接到支撑部分的基板。 还提供了一种发光器，光检测器和可操作以相对于基板倾斜顶板和背板以便将反射的激光引向光检测器的电路。

    Low temperature ceramic microelectromechanical structures
    18.
    发明授权
    Low temperature ceramic microelectromechanical structures 有权
    低温陶瓷微机电结构

    公开(公告)号：US08658452B2

    公开(公告)日：2014-02-25

    申请号：US13003328

    申请日：2009-07-08

    Applicant: Mourad El-Gamal ,  Frederic Nabki ,  Paul-Vahe Cicek

    Inventor： Mourad El-Gamal ,  Frederic Nabki ,  Paul-Vahe Cicek

    IPC: H01L21/00 ,  H01L27/14

    CPC classification number: B81C1/00666 ,  B81B3/0021 ,  B81B7/008 ,  B81B2201/01 ,  B81B2201/0235 ,  B81B2201/0271 ,  B81B2201/03 ,  B81B2207/015 ,  B81B2207/03 ,  B81C1/00063 ,  B81C1/00246 ,  B81C1/00396 ,  B81C1/00587 ,  B81C2201/014 ,  B81C2201/0169 ,  B81C2201/0174 ,  B81C2203/0721 ,  B81C2203/0735

    Abstract: A method of providing microelectromechanical structures (MEMS) that are compatible with silicon CMOS electronics is provided. The method providing for processes and manufacturing sequences limiting the maximum exposure of an integrated circuit upon which the MEMS is manufactured to below 350° C., and potentially to below 250° C., thereby allowing direct manufacturing of the MEMS devices onto electronics, such as Si CMOS circuits. The method further providing for the provisioning of MEMS devices with multiple non-conductive structural layers such as silicon carbide separated with small lateral gaps. Such silicon carbide structures offering enhanced material properties, increased environmental and chemical resilience whilst also allowing novel designs to be implemented taking advantage of the non-conductive material of the structural layer. The use of silicon carbide being beneficial within the formation of MEMS elements such as motors, gears, rotors, translation drives, etc where increased hardness reduces wear of such elements during operation.

    Abstract translation: 提供了一种提供与硅CMOS电子器件兼容的微机电结构（MEMS）的方法。 该方法提供了将MEMS制造的集成电路的最大曝光限制在低于350℃并可能低于250℃的工艺和制造顺序，从而允许将MEMS器件直接制造到电子器件上，例如 作为Si CMOS电路。 该方法进一步提供具有多个非导电结构层的MEMS器件，例如用小的侧向间隙分离的碳化硅。 这种碳化硅结构提供增强的材料性能，增加环境和化学弹性，同时还允许利用结构层的非导电材料来实现新颖的设计。 在形成MEMS元件（例如马达，齿轮，转子，平移驱动器等）中使用碳化硅是有益的，其中增加的硬度降低了操作期间这些元件的磨损。

    LOW TEMPERATURE CERAMIC MICROELECTROMECHANICAL STRUCTURES
    19.
    发明申请
    LOW TEMPERATURE CERAMIC MICROELECTROMECHANICAL STRUCTURES 有权
    低温陶瓷微电子结构

    公开(公告)号：US20110111545A1

    公开(公告)日：2011-05-12

    申请号：US13003328

    申请日：2009-07-08

    Applicant: Mourad El-Gamal

    Inventor： Mourad El-Gamal

    IPC: H01L21/02

    CPC classification number: B81C1/00666 ,  B81B3/0021 ,  B81B7/008 ,  B81B2201/01 ,  B81B2201/0235 ,  B81B2201/0271 ,  B81B2201/03 ,  B81B2207/015 ,  B81B2207/03 ,  B81C1/00063 ,  B81C1/00246 ,  B81C1/00396 ,  B81C1/00587 ,  B81C2201/014 ,  B81C2201/0169 ,  B81C2201/0174 ,  B81C2203/0721 ,  B81C2203/0735

    Abstract: A method of providing microelectromechanical structures (MEMS) that are compatible with silicon CMOS electronics is provided. The method providing for processes and manufacturing sequences limiting the maximum exposure of an integrated circuit upon which the MEMS is manufactured to below 350° C., and potentially to below 250° C., thereby allowing direct manufacturing of the MEMS devices onto electronics, such as Si CMOS circuits. The method further providing for the provisioning of MEMS devices with multiple non-conductive structural layers such as silicon carbide separated with small lateral gaps. Such silicon carbide structures offering enhanced material properties, increased environmental and chemical resilience whilst also allowing novel designs to be implemented taking advantage of the non-conductive material of the structural layer. The use of silicon carbide being beneficial within the formation of MEMS elements such as motors, gears, rotors, translation drives, etc where increased hardness reduces wear of such elements during operation.

    Abstract translation: 提供了一种提供与硅CMOS电子器件兼容的微机电结构（MEMS）的方法。 该方法提供了将MEMS制造的集成电路的最大曝光限制在低于350℃并可能低于250℃的工艺和制造顺序，从而允许将MEMS器件直接制造到电子器件上，例如 作为Si CMOS电路。 该方法进一步提供具有多个非导电结构层的MEMS器件，例如用小的侧向间隙分离的碳化硅。 这种碳化硅结构提供增强的材料性能，增加环境和化学弹性，同时还允许利用结构层的非导电材料来实现新颖的设计。 在形成MEMS元件（例如马达，齿轮，转子，平移驱动器等）中使用碳化硅是有益的，其中增加的硬度降低了操作期间这些元件的磨损。

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