公开(公告)号：US6024801A

公开(公告)日：2000-02-15

申请号：US761579

申请日：1996-12-09

Applicant: Robert M. Wallace ,  Monte A. Douglas

Inventor： Robert M. Wallace ,  Monte A. Douglas

IPC: B08B7/00 ,  B81B3/00 ,  B81C1/00 ,  G02B26/08 ,  H01L21/304 ,  B08B3/00

CPC classification number: B81C1/0096 ,  B08B7/00 ,  B08B7/0021 ,  B81B3/0005 ,  B81C1/00857 ,  G02B26/0841 ,  B81C2201/112 ,  B81C2201/117

Abstract: A method of cleaning and treating a device, including those of the micromechanical (10) and semiconductor type. The surface of a device, such as the landing electrode (22) of a digital micromirror device (10), is first cleaned with a supercritical fluid (SCF) in a chamber (50) to remove soluble chemical compounds, and then maintained in the SCF chamber until and during the subsequent passivation step. Passivants including PFDA and PFPE are suitable for the present invention. By maintaining the device in the SCF chamber, and without exposing the device to, for instance, the ambient of a clean room, organic and inorganic contaminants cannot be deposited upon the cleaned surface prior to the passivation step. The present invention derives technical advantages by providing an improved passivated surface that is suited to extend the useful operation life of devices, including those of the micromechanical type, reducing stiction forces between contacting elements such as a mirror and its landing electrode. The present invention is also suitable for cleaning and passivating other surfaces including a surface of semiconductor wafers, and the surface of a hard disk memory drive.

Abstract translation: 一种清洁和处理包括微机械（10）和半导体类型的装置的方法。 首先在室（50）中用超临界流体（SCF）清洁诸如数字微镜装置（10）的着陆电极（22）的装置的表面以除去可溶性化合物，然后保持在 SCF室直到和之后的钝化步骤。 包括PFDA和PFPE的钝化剂适用于本发明。 通过将装置保持在SCF室中，并且在不将装置暴露于例如洁净室的环境的情况下，在钝化步骤之前，有机和无机污染物不能沉积在清洁的表面上。 本发明通过提供一种改进的钝化表面来提供技术优点，所述钝化表面适于延长包括微机械型的装置的有用使用寿命，从而降低诸如反射镜和其着陆电极的接触元件之间的静摩擦力。 本发明也适用于清洁和钝化包括半导体晶片的表面的其它表面以及硬盘存储器驱动器的表面。

公开(公告)号：US06939574B2

公开(公告)日：2005-09-06

申请号：US10632698

申请日：2003-08-01

Applicant: Bevan Staple ,  David Miller ,  Lilac Muller Muller

Inventor： Bevan Staple ,  David Miller ,  Lilac Muller Muller

IPC: B05D5/12 ,  B81C1/00 ,  B44C1/22 ,  H01L21/00

CPC classification number: B81C1/00476 ,  B81B2201/042 ,  B81C2201/117

Abstract: A method is provided for preventing dopant leaching from a doped structural film during fabrication of a microelectromechanical system. A microstructure that includes the doped structural film, sacrificial material, and metallic material is produced with a combination of deposition, patterning, and etching techniques. The sacrificial material is dissolved with a release solution that has a substance destructive to the sacrificial material. This substance also acts as an electrolyte, forming a galvanic cell with the doped structural film and metallic material acting as electrodes. The effects of the galvanic cell are suppressed by including a nonionic detergent mixed in the release solution.

Abstract translation: 提供了一种在微电子机械系统的制造期间防止掺杂的结构膜的掺杂剂浸出的方法。 包括掺杂的结构膜，牺牲材料和金属材料的微结构通过沉积，图案化和蚀刻技术的组合来生产。 牺牲材料用具有对牺牲材料具有破坏性的物质的释放溶液溶解。 该物质还用作电解质，形成具有掺杂结构膜和金属材料作为电极的原电池。 通过包括混合在脱模溶液中的非离子洗涤剂来抑制原电池的影响。

公开(公告)号：US20050118813A1

公开(公告)日：2005-06-02

申请号：US10782355

申请日：2004-02-19

Applicant: Michael Korzenski ,  Thomas Baum ,  Chongying Xu ,  Eliodor Ghenciu

Inventor： Michael Korzenski ,  Thomas Baum ,  Chongying Xu ,  Eliodor Ghenciu

IPC: B08B7/00 ,  B81B3/00 ,  H01L21/306 ,  H01L21/00 ,  H01L21/302 ,  H01L21/461

CPC classification number: B81C1/00936 ,  B08B7/0021 ,  B81C2201/0108 ,  B81C2201/117 ,  H01L21/02063

Abstract: A method and composition for removing silicon-containing sacrificial layers from Micro Electro Mechanical System (MEMS) and other semiconductor substrates having such sacrificial layers is described. The etching compositions include a supercritical fluid (SCF), an etchant species, a co-solvent, and optionally a surfactant. Such etching compositions overcome the intrinsic deficiency of SCFs as cleaning reagents, viz., the non-polar character of SCFs and their associated inability to solubilize polar species that must be removed from the semiconductor substrate. The resultant etched substrates experience lower incidents of stiction relative to substrates etched using conventional wet etching techniques.

Abstract translation: 描述了用于从微机电系统（MEMS）和其它具有这种牺牲层的半导体衬底去除含硅牺牲层的方法和组合物。 蚀刻组合物包括超临界流体（SCF），蚀刻剂物质，共溶剂和任选的表面活性剂。 这样的蚀刻组合物克服了作为清洗剂的SCF的固有缺陷，即SCF的非极性特征以及它们不溶于必须从半导体衬底去除的极性物质。 所得到的蚀刻的衬底相对于使用常规湿蚀刻技术蚀刻的衬底的沉降事件较少。

公开(公告)号：US20050112887A1

公开(公告)日：2005-05-26

申请号：US10977302

申请日：2004-10-29

Applicant: Junichi Muramoto

Inventor： Junichi Muramoto

IPC: H01L21/302 ,  B81C1/00 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/4763 ,  H01L21/461

CPC classification number: B81C1/00047 ,  B81C1/00476 ,  B81C2201/0142 ,  B81C2201/117 ,  H01L21/3065 ,  H01L21/31116

Abstract: An etching process is provided. The etching process allows etching and removing with a sufficient rate, from a fine etching opening, a sacrificing layer and thereby can form a structure that has a large hollow portion or a complicatedly constituted space portion and furthermore a structure high in the aspect ratio with excellent shape accuracy and without deteriorating a surface state. In the etching process, a work is exposed to a processing fluid that contains an etching reaction species and the processing fluid is maintained in a state where it is flowed relative to the work. In this state, on a surface of the work, illumination light is intermittently illuminated to heat the work intermittently. Thereby, the processing fluid in the neighborhood of the work is intermittently heated and thereby expanded and contracted to etch. As the processing fluid, a substance that contains an etching reaction species and is in a super critical state can be preferably used.

Abstract translation: 提供蚀刻工艺。 蚀刻工艺允许从精细蚀刻开口，牺牲层以足够的速率进行蚀刻和去除，从而可以形成具有大的中空部分或复杂构造的空间部分的结构，并且还可以形成具有优异的纵横比的结构 形状精度并且不会使表面状态恶化。 在蚀刻工艺中，工件暴露于含有蚀刻反应物质的处理流体，并且处理流体保持在相对于工件流动的状态。 在这种状态下，在工件的表面上间歇地照明照明光以间歇地加热工件。 由此，工件附近的处理流体被间歇地加热，从而膨胀和收缩以进行蚀刻。 作为处理液，优选使用含有蚀刻反应物质并处于超临界状态的物质。

公开(公告)号：US20040259357A1

公开(公告)日：2004-12-23

申请号：US10501155

申请日：2004-07-13

Inventor： Koichiro Saga

IPC: H01L021/302 ,  H01L021/461

CPC classification number: C11D7/3227 ,  B81C1/0092 ,  B81C1/00928 ,  B81C2201/117 ,  C11D7/08 ,  C11D7/3209 ,  C11D7/3218 ,  C11D11/0047 ,  G03F1/82 ,  G03F7/425 ,  H01L21/02052

Abstract: A surface treatment method of treating a surface having structural bodies formed thereon using a supercritical fluid (4) is characterized in adding a co-solvent or a reactant (5) such as ammonium hydroxide, alkanolamine, amine fluoride, hydrofluoric acid and so forth to the supercritical fluid (4). The supercritical fluid (4) may also be added with a surfactant (6) together with the co-solvent or the reactant (5). It is allowable to use a polar solvent as the surfactant (6). This makes it possible to provide a surface treatment method capable of thoroughly removing the residue only by a treatment using the supercritical fluid.

Abstract translation: 使用超临界流体（4）处理其上形成有结构体的表面的表面处理方法的特征在于将共溶剂或反应物（5）如氢氧化铵，链烷醇胺，氟化胺，氢氟酸等添加到 超临界流体（4）。 超临界流体（4）还可以与助溶剂或反应物（5）一起加入表面活性剂（6）。 可以使用极性溶剂作为表面活性剂（6）。 这使得可以提供能够通过使用超临界流体的处理彻底除去残留物的表面处理方法。

公开(公告)号：US20030196679A1

公开(公告)日：2003-10-23

申请号：US10124842

申请日：2002-04-18

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： John Michael Cotte ,  Emily E. Fisch ,  Kenneth John McCullough ,  Wayne Martin Moreau ,  Harald Okorn-Schmidt ,  Keith R. Pope ,  John P. Simons ,  William A. Syverson ,  Charles J. Taft

IPC: B08B003/12

CPC classification number: B08B3/12 ,  B08B7/0021 ,  B81C1/00841 ,  B81C2201/117 ,  H01L21/67017

Abstract: A process and apparatus for the processing of a precision surface. The process and apparatus includes contacting of a precision surface in a process chamber with liquid or supercritical carbon dioxide in which sonic waves are generated.

Abstract translation: 用于加工精密表面的工艺和设备。 该方法和装置包括将处理室中的精密表面与产生声波的液体或超临界二氧化碳接触。

公开(公告)号：US20030064149A1

公开(公告)日：2003-04-03

申请号：US10241999

申请日：2002-09-12

Inventor： Seth A. Miller

IPC: B05D005/06

CPC classification number: G02B26/0841 ,  B05D1/025 ,  B05D2401/90 ,  B81B3/0005 ,  B81C1/0096 ,  B81C2201/112 ,  B81C2201/117

Abstract: A method of coating one or more surfaces of a micromechanical device. The coating is applied as a material dissolved in CO2. The CO2 is used a carrier solvent, with the coating being applied as a spray or in liquid form, to form a film on the surface. The CO2 may be used in supercritical form to dissolve the material.

Abstract translation: 一种涂覆微机械装置的一个或多个表面的方法。 将涂层作为溶解在二氧化碳中的材料施加。 使用CO 2作为载体溶剂，涂层以喷雾或液体形式施用，以在表面上形成膜。 CO2可以以超临界形式使用，以溶解材料。

公开(公告)号：US06203715B1

公开(公告)日：2001-03-20

申请号：US09232824

申请日：1999-01-19

Applicant: You-Kwang Kim ,  Jae-Hyuk Chung

Inventor： You-Kwang Kim ,  Jae-Hyuk Chung

IPC: G02B508

CPC classification number: B81C1/00174 ,  B81B2201/042 ,  B81C2201/0109 ,  B81C2201/117 ,  G02B26/0858 ,  G21K1/06 ,  G21K2201/067

Abstract: An inventive method for the manufacture of a thin film actuated mirror array comprises the steps of: preparing an active matrix including a substrate, an array of switching devices and an array of connecting terminals; forming a first sacrificial layer including an array of empty cavities; forming an array of actuating structures, each of the actuating structures including an elastic member, a lower electrode, an electrodisplacive member, an upper electrode and a via contact; forming a second sacrificial layer including an array of empty slots; forming an array of mirrors; removing the first and the second sacrificial layer to thereby form the thin film actuated mirror array. The use of a poly-Si as the material for the first and the second sacrificial layers will ensure an easy flattening thereof and an easy removal thereof, resulting an increased otpical efficiency in the thin film actuated mirror thus formed.

Abstract translation: 用于制造薄膜致动反射镜阵列的创造性方法包括以下步骤：制备包括基板，开关装置阵列和连接端子阵列的有源矩阵; 形成包括空腔阵列的第一牺牲层; 形成致动结构的阵列，每个致动结构包括弹性构件，下电极，电致位移构件，上电极和通孔接触件; 形成包括空槽阵列的第二牺牲层; 形成一组镜子; 去除第一和第二牺牲层，从而形成薄膜致动反射镜阵列。 使用多晶硅作为第一牺牲层和第二牺牲层的材料将确保其容易的平坦化和易于除去，从而在由此形成的薄膜致动反射镜中产生增加的效率。

公开(公告)号：US08889563B2

公开(公告)日：2014-11-18

申请号：US13024782

申请日：2011-02-10

Applicant: Kwon-Taek Lim

Inventor： Kwon-Taek Lim

IPC: H01L21/306 ,  B81C1/00 ,  H01L21/311

CPC classification number: H01L21/31111 ,  B81C1/00928 ,  B81C2201/117

Abstract: An aspect of the invention is to provide a method and apparatus for etching the silicon oxide layer of a semiconductor substrate, whereby the processing time for cleaning or rinsing, as well as any undesired aftereffects by residual hydrofluoric acid, may be reduced, in using the dry etching method involving the use of dense carbon dioxide that contains hydrofluoric acid, during the manufacturing process of a micro-electronic device.

Abstract translation: 本发明的一个方面是提供一种用于蚀刻半导体衬底的氧化硅层的方法和装置，从而可以减少用于清洗或冲洗的处理时间以及由残留的氢氟酸引起的任何不期望的后果， 在微电子器件的制造过程中涉及使用含有氢氟酸的致密二氧化碳的干蚀刻方法。

公开(公告)号：US20060014312A1

公开(公告)日：2006-01-19

申请号：US11229968

申请日：2005-09-19

Applicant: Joshua Malone

Inventor： Joshua Malone

IPC: H01L21/00

CPC classification number: B81C1/00833 ,  B81B2201/047 ,  B81C1/00317 ,  B81C2201/056 ,  B81C2201/117 ,  B81C2203/0145 ,  G02B26/0833

Abstract: The present invention provides methods of manufacturing a MEMS assembly. In one embodiment, the method includes mounting a MEMS device, such as a MEMS mirror array, on an assembly substrate, where the MEMS device has a sacrificial layer over components formed therein. The method also includes coupling an assembly lid to the assembly substrate and over the MEMS device to create an interior of the MEMS assembly housing the MEMS device, whereby the coupling maintains an opening to the interior of the MEMS assembly. Furthermore, the method includes removing the sacrificial layer through the opening. A MEMS assembly constructed according to a process of the present invention is also disclosed.

Abstract translation: 本发明提供了制造MEMS组件的方法。 在一个实施例中，该方法包括将MEMS器件（例如MEMS反射镜阵列）安装在组装衬底上，其中MEMS器件在其中形成的部件上具有牺牲层。 该方法还包括将组装盖耦合到组装衬底和MEMS器件上以形成容纳MEMS器件的MEMS组件的内部，由此耦合保持到MEMS组件的内部的开口。 此外，该方法包括通过开口去除牺牲层。 还公开了根据本发明的方法构造的MEMS组件。