公开(公告)号：US20140054740A1

公开(公告)日：2014-02-27

申请号：US13969828

申请日：2013-08-19

Applicant: Robert Bosch GmbH

Inventor： Gary Yama ,  Ando Feyh ,  Ashwin Samarao ,  Fabian Purkl ,  Gary O'Brien

IPC: H01L31/02

CPC classification number: H01L31/02019 ,  G01J5/023 ,  G01J5/0235 ,  G01J5/024 ,  G01J5/20 ,  G01J2005/204 ,  H01L27/1446

Abstract: A method of manufacturing a semiconductor device includes forming at least one sacrificial layer on a substrate during a complementary metal-oxide-semiconductor (CMOS) process. An absorber layer is deposited on top of the at least one sacrificial layer. A portion of the at least one sacrificial layer beneath the absorber layer is removed to form a gap over which a portion of the absorber layer is suspended. The sacrificial layer can be an oxide of the CMOS process with the oxide being removed to form the gap using a selective hydrofluoric acid vapor dry etch release process. The sacrificial layer can also be a polymer layer with the polymer layer being removed to form the gap using an O2 plasma etching process.

Abstract translation: 制造半导体器件的方法包括在互补金属氧化物半导体（CMOS）工艺期间在衬底上形成至少一个牺牲层。 在所述至少一个牺牲层的顶部上沉积吸收层。 吸收层下面的至少一个牺牲层的一部分被去除以形成一个间隙，吸收层的一部分悬挂在该间隙上。 牺牲层可以是CMOS工艺的氧化物，其中使用选择性氢氟酸蒸气干蚀刻释放工艺除去氧化物以形成间隙。 牺牲层也可以是聚合物层，其中除去聚合物层以使用O 2等离子体蚀刻工艺形成间隙。

公开(公告)号：US20080093553A1

公开(公告)日：2008-04-24

申请号：US11583210

申请日：2006-10-19

Applicant: Ming-Ren Lian ,  Kevin R. Coffey

Inventor： Ming-Ren Lian ,  Kevin R. Coffey

IPC: G01J5/00

CPC classification number: G01J5/20 ,  G01J2005/204

Abstract: A conduction structure for infrared microbolometer sensors and a method for sensing electromagnetic radiation may be provided. The microbolometer may include a first conductor layer and a second conductor layer. The microbolometer further may include a bolometer layer between the first conductor layer and the second conductor layer.

Abstract translation: 可以提供用于红外微测热计传感器的传导结构和用于感测电磁辐射的方法。 微热辐射计可以包括第一导体层和第二导体层。 微热比特还可以包括在第一导体层和第二导体层之间的测辐射热计层。

公开(公告)号：US5369280A

公开(公告)日：1994-11-29

申请号：US940883

申请日：1992-12-17

Applicant: Kevin C. Liddiard

Inventor： Kevin C. Liddiard

IPC: G01J1/02 ,  G01J5/20 ,  H01C7/04 ,  H01L37/00 ,  G61J5/20

CPC classification number: G01J5/20 ,  G01J2005/204

Abstract: A thermal infrared detector comprising a dielectric pellicle suspended over a cavity in a substrate, the pellicle supporting a detector element comprising a heat sensitive semiconductor layer between a pair of thin fim metallic contracts, these being deposited on the pellicle, the cavity being formed by etching and removal of the substrate material through holes or slots in the surface of the substrate.

Abstract translation: PCT No.PCT / AU91 / 00162 Sec。 371日期：1992年12月17日 102（e）日期1992年12月17日PCT 1991年4月24日提交PCT公布。 WO91 / 16607 PCT出版物 日期：1991年10月31日。一种热红外检测器，包括悬浮在衬底中的空腔上的电介质薄膜，所述防护薄膜组件支撑检测器元件，所述检测器元件包括一对薄金属合金之间的热敏半导体层，这些薄膜沉积在防护薄膜组件 通过蚀刻和去除衬底材料通过衬底表面中的孔或槽形成空腔。

公开(公告)号：US20170328779A1

公开(公告)日：2017-11-16

申请号：US15369702

申请日：2016-12-05

Applicant: FLIR Systems, Inc.

Inventor： Gregory A. Carlson ,  Alex Matson ,  Andrew Sharpe ,  Davey Beard ,  Paul Schweikert ,  Robert Simes

IPC: G01J5/20 ,  G01J1/02 ,  H01L27/146 ,  H01L21/66 ,  G01J5/04 ,  G01J5/02 ,  G01J1/44 ,  H01L37/02

CPC classification number: G01J5/20 ,  G01J1/0204 ,  G01J1/44 ,  G01J5/02 ,  G01J5/0215 ,  G01J5/023 ,  G01J5/046 ,  G01J5/10 ,  G01J2005/0077 ,  G01J2005/204 ,  H01L22/14 ,  H01L22/32 ,  H01L27/146 ,  H01L27/14618 ,  H01L27/1462 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14669 ,  H01L27/14687 ,  H01L27/14698 ,  H01L37/02 ,  H04N5/2251 ,  H04N5/33 ,  Y10T29/49826

Abstract: An infrared detector useful in, e.g., infrared cameras, includes a substrate having an array of infrared detectors and a readout integrated circuit interconnected with the array disposed on an upper surface thereof, for one or more embodiments. A generally planar window is spaced above the array, the window being substantially transparent to infrared light. A mesa is bonded to the window. The mesa has closed marginal side walls disposed between an outer periphery of a lower surface of the window and an outer periphery of the upper surface of the substrate and defines a closed cavity between the window and the array that encloses the array. A solder seal bonds the mesa to the substrate so as to seal the cavity.

公开(公告)号：US09417134B2

公开(公告)日：2016-08-16

申请号：US14131298

申请日：2012-07-13

Applicant: Charlie Koechlin ,  Patrick Bouchon ,  Riad Haidar ,  Jean-Luc Pelouard ,  Jean-Jacques Yon ,  Joël Deschamps ,  Fabrice Pardo ,  Stéphane Collin

Inventor： Charlie Koechlin ,  Patrick Bouchon ,  Riad Haidar ,  Jean-Luc Pelouard ,  Jean-Jacques Yon ,  Joël Deschamps ,  Fabrice Pardo ,  Stéphane Collin

IPC: H04N5/33 ,  G01J5/20 ,  G01J5/08 ,  H01L27/146

CPC classification number: G01J5/20 ,  G01J5/08 ,  G01J5/0853 ,  G01J2005/204 ,  H01L27/14685 ,  H04N5/33

Abstract: According to one aspect, the invention relates to a microbolometer array for thermal detection of light radiation in a given spectral band, comprising a supporting substrate and an array of microbolometers (300) of given dimensions, arranged in an array. Each of said microbolometers comprises a membrane (301) suspended above said supporting substrate, said membrane consisting of an element (305) for absorbing the incident radiation and a thermometric element (304) in thermal contact with the absorber, electrically insulated from said absorber element. The absorber element comprises at least one first metal/insulator/metal (MIM) structure comprising a multilayer of three superposed films of submicron-order thickness i.e. a first metallic film (311), a dielectric film (310), and a second metallic film (309), said MIM structure being able to have a resonant absorption of said incident radiation at at least one wavelength in said spectral band. The area of the microbolometer pixel covered by said membrane (301) is less than or equal to half of the total area of the microbolometer pixel.

Abstract translation: 根据一个方面，本发明涉及一种用于在给定光谱带中的热辐射的热检测的微热辐射计阵列，其包括支撑衬底和以阵列布置的给定尺寸的微热计（300）阵列。 每个所述微伏热计包括悬挂在所述支撑基底上方的膜（301），所述膜由用于吸收入射辐射的元件（305）和与所述吸收体热接触的测温元件（304）组成，所述温度测量元件 。 所述吸收元件包括至少一个第一金属/绝缘体/金属（MIM）结构，其包括具有亚微米级厚度的三层重叠膜的多层，即第一金属膜（311），电介质膜（310）和第二金属膜 （309），所述MIM结构能够在所述光谱带中具有至少一个波长的所述入射辐射的共振吸收。 由所述膜（301）覆盖的微热辐射计像素的面积小于或等于微测热计像素的总面积的一半。

公开(公告)号：US09279730B2

公开(公告)日：2016-03-08

申请号：US12601556

申请日：2008-05-28

Applicant: Carsten Giebeler ,  Matthias Schreiter ,  Christian Paulus

Inventor： Carsten Giebeler ,  Matthias Schreiter ,  Christian Paulus

IPC: G01J5/02 ,  G01J5/34 ,  G01J5/14 ,  G01J5/22 ,  G01J5/04 ,  G01N21/01 ,  H01L27/146 ,  H01L41/09 ,  G01J5/00 ,  G01J5/20

CPC classification number: G01J5/34 ,  G01J5/00 ,  G01J5/0205 ,  G01J5/0225 ,  G01J5/023 ,  G01J5/04 ,  G01J5/041 ,  G01J5/045 ,  G01J5/14 ,  G01J5/22 ,  G01J2005/0077 ,  G01J2005/204 ,  G01N2021/0106 ,  H01L27/14683 ,  H01L41/0973 ,  Y10T156/10

Abstract: In a device for detecting thermal radiation, at least one membrane is provided on which at least one thermal detector element is mounted for the conversion of the thermal radiation into an electric signal and at least one circuit support for carrying the membrane and for carrying at least one readout circuit for reading out the electrical signal, the detector element and the readout circuit being connected together electrically by an electric contact which passes through the membrane. In addition, a method of producing the device with the following method steps is provided: a) provision of the membrane with the detector element and of at least one electrical through-connection and provision of the circuit support and b) bringing together the membrane and the circuit support in such a manner that the detector element and the readout circuit are connected together electrically by an electrical contact passing through the membrane. Production activity is preferably carried out at wafer level: functionalized silicon substrates are stacked upon one another, firmly bonded to one another and then divided into individual elements. Preferably, the detector elements comprise of pyro-electrical detector elements. The device finds application in motion detectors, presence detectors and in thermal imaging cameras.

Abstract translation: 在用于检测热辐射的装置中，提供至少一个膜，其上安装有至少一个热检测器元件，用于将热辐射转换成电信号，以及至少一个用于承载膜的电路支架， 一个用于读出电信号的读出电路，检测器元件和读出电路由通过膜的电接点电连接在一起。 此外，提供了一种通过以下方法步骤制造该装置的方法：a）提供具有检测器元件的膜和至少一个电气通过连接和提供电路支撑件，以及b）将膜和 电路支撑件以检测器元件和读出电路通过穿过膜的电接触电连接在一起的方式。 生产活性优选在晶片级进行：功能化的硅衬底相互堆叠，彼此牢固地结合，然后分成单个元件。 优选地，检测器元件包括热电检测元件。 该设备在运动检测器，存在检测器和热成像相机中可以应用。

公开(公告)号：US20150362374A1

公开(公告)日：2015-12-17

申请号：US14729441

申请日：2015-06-03

Applicant: Virginia D. Wheeler ,  Francis J. Kub ,  Charles R. Eddy, JR. ,  Marko J. Tadjer

Inventor： Virginia D. Wheeler ,  Francis J. Kub ,  Charles R. Eddy, JR. ,  Marko J. Tadjer

IPC: G01J5/20 ,  H01L37/00

CPC classification number: G01J5/20 ,  C23C16/45525 ,  G01J5/024 ,  G01J5/0275 ,  G01J5/084 ,  G01J5/0853 ,  G01J5/089 ,  G01J2005/204 ,  G02B1/10 ,  G02B1/11 ,  G02B1/14 ,  G02B1/18 ,  G02B5/003 ,  G02F1/0147 ,  H01L37/00 ,  Y10T156/10

Abstract: This disclosure describes a microbolometer sensor element and microbolometer array imaging devices optimized for infrared radiation detection that are enabled using atomic layer deposition (ALD) of vanadium oxide material layer (VOx) for a temperature sensitive resistor.

Abstract translation: 本公开描述了一种用于红外辐射检测优化的微测辐射热计传感器元件和微测辐射计阵列成像装置，其使用用于温度敏感电阻器的氧化钒材料层（VOx）的原子层沉积（ALD）来实现。

公开(公告)号：US20150300884A1

公开(公告)日：2015-10-22

申请号：US13902529

申请日：2013-05-24

Applicant: Theodore Reck ,  Ken B. Cooper ,  Cecile Jung-Kubiak ,  Choonsup Lee ,  John J. Gill

Inventor： Theodore Reck ,  Ken B. Cooper ,  Cecile Jung-Kubiak ,  Choonsup Lee ,  John J. Gill

IPC: G01J5/20 ,  G01S17/02

CPC classification number: G01J5/20 ,  G01J2005/0077 ,  G01J2005/204 ,  G01S7/02 ,  G01S7/036 ,  G01S13/887 ,  G01S13/89

Abstract: A multi-pixel terahertz transceiver is constructed using a stack of semiconductor layers that communicate using vias defined within the semiconductor layers. By using a stack of semiconductor layers, the various electrical functions of each layer can be tested easily without having to assemble the entire transceiver. In addition, the design allows the production of a transceiver having pixels set 10 mm apart.

Abstract translation: 使用在半导体层内限定的通孔进行通信的半导体层堆叠来构造多像素太赫兹收发器。 通过使用一叠半导体层，可以容易地测试每一层的各种电功能，而无需组装整个收发器。 此外，该设计允许制造具有相距10mm的像素的收发器。

公开(公告)号：US20150017788A1

公开(公告)日：2015-01-15

申请号：US14327715

申请日：2014-07-10

Applicant: BAE Systems Information And Electronic Systems Integration Inc.

Inventor： Vu A. Vu

IPC: H01L21/02

CPC classification number: H01L21/02595 ,  G01J5/024 ,  G01J5/046 ,  G01J5/0853 ,  G01J5/20 ,  G01J2005/204 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02667 ,  H01L31/09 ,  H01L31/1812 ,  Y02E10/50

Abstract: A system and method for growing polycrystalline silicon-germanium film that includes mixing a GeH4 gas and a SiH4 gas to coat and grow polycrystalline silicon-germanium film on a silicon wafer. The GeH4 gas and the SiH4 gas are also heated and the pressure around the wafer is reduced to at least 2.5*10−3 mBar to produce the polycrystalline silicon-germanium film. The polycrystalline silicon-germanium film is then annealed to improve its resistivity.

Abstract translation: 一种用于生长多晶硅 - 锗膜的系统和方法，其包括混合GeH 4气体和SiH 4气体以在硅晶片上涂覆和生长多晶硅 - 锗膜。 还加热GeH 4气体和SiH 4气体，并且将晶片周围的压力降低至至少2.5×10 -3 mBar，以产生多晶硅 - 锗膜。 然后将多晶硅锗膜退火以提高其电阻率。

公开(公告)号：US07633065B2

公开(公告)日：2009-12-15

申请号：US11583210

申请日：2006-10-19

Applicant: Ming-Ren Lian ,  Kevin R. Coffey

Inventor： Ming-Ren Lian ,  Kevin R. Coffey

IPC: G01J5/24

CPC classification number: G01J5/20 ,  G01J2005/204

Abstract: A conduction structure for infrared microbolometer sensors and a method for sensing electromagnetic radiation may be provided. The microbolometer may include a first conductor layer and a second conductor layer. The microbolometer further may include a bolometer layer between the first conductor layer and the second conductor layer.

Abstract translation: 可以提供用于红外微测热计传感器的传导结构和用于感测电磁辐射的方法。 微热辐射计可以包括第一导体层和第二导体层。 微热比特还可以包括在第一导体层和第二导体层之间的测辐射热计层。