Abstract:
To detect an infinitesimal defect, highly precisely measure the dimensions of the detect, a detect inspection device is configured to comprise: a irradiation unit which irradiate light in a linear region on a surface of a sample; a detection unit which detect light from the linear region; and a signal processing unit which processes a signal obtained by detecting light and detecting a defect. The detection unit includes: an optical assembly which diffuses the light from the sample in one direction and forms an image in a direction orthogonal to the one direction; and a detection assembly having an array sensor in which detection pixels are positioned two-dimensionally, which detects the light diffused in the one direction and imaged in the direction orthogonal to the one direction, adds output signals of each of the detection pixels aligned in the direction in which the light is diffused, and outputs same.
Abstract:
An imaging device according to an aspect of the present disclosure is provided with: a light source that, in operation, emits pulsed light including components of different wavelengths; an encoding element that has regions each having different light transmittance, through which incident light from a target onto which the pulsed light has been irradiated is transmitted; a spectroscopic element that, in operation, causes the incident light transmitted through the regions to be dispersed into light rays in accordance with the wavelengths; and an image sensor that, in operation, receives the light rays dispersed by the spectroscopic element.
Abstract:
An integrated circuit includes a photodetection region configured to receive incident photons. The photodetection region is configured to produce a plurality of charge carriers in response to the incident photons. The integrated circuit also includes at least one charge carrier storage region. The integrated circuit also includes a charge carrier segregation structure configured to selectively direct charge carriers of the plurality of charge carriers into the at least one charge carrier storage region based upon times at which the charge carriers are produced.
Abstract:
A Raman probe is used to detect crystal structure of a substrate undergoing thermal processing in a thermal processing system. The Raman probe may be coupled to a targeting system of a laser thermal processing system. The Raman probe includes a laser positioned to direct probe radiation through the targeting system to the substrate, a receiver attuned to Raman radiation emitted by the substrate, and a filter that blocks laser radiation reflected by the substrate. The Raman probe may include more than one laser, more than one receiver, and more than one filter. The Raman probe may provide more than one wavelength of incident radiation to probe the substrate at different depths.
Abstract:
Methods and systems are described herein for producing high radiance illumination light suitable for semiconductor metrology. A cold gas is repeatedly ignited by a pulsed laser to periodically generate accessible, high brightness illumination light generated during each break-down event. The pulse duration and repetition period are set to ignite, but not sustain fully formed plasma. The central plasma core emits high color temperature light before a cooler plasma region forms around the central core. Thus, after ignition, the plasma is extinguished before the arrival of the next laser pulse. The repeated plasma ignition/extinction cycle generates illumination light at high color temperature that is accessible for illumination purposes in a metrology application. In one embodiment, a bulb filled with Xenon gas at 10 atmospheres is repeatedly ignited with a pulsed laser having pulse duration of 10 nanoseconds to generate illumination light with a color temperature of approximately 60,000 Kelvin.
Abstract:
A novel device, method and systems disclosed managing the thermal challenges of LIBS laser components and a spectrometer in a handheld structure as well the use of simplified light signal collection which includes a bare fiber optic to collect the emitted light in close proximity to (or in contact with) the test material. In one example embodiment of the handheld LIBS device, a burst pulse frequency is 4 kHz is used resulting in a time between pulses of about 250 μs which is a factor of 10 above that of other devices in the prior art. In a related embodiment, an active Q-switched laser module is used along with a compact spectrometer module using a transmission grating to improve LIBS measurement while substantially reducing the size of the handheld analyzer.
Abstract:
A laser scanning type observation apparatus includes a pulsed-laser oscillation means irradiating pulsed laser to an object, a detector receiving light from the object to output a detection signal, a means detecting pulsed-laser oscillation to output a synchronous signal, a circuit delaying the synchronous signal for an optional amount of time to output a trigger signal, a means sampling the detection signal in synchronization with the trigger signal, a memory storing the sampled detection signal, a setting unit capable of setting delay time for delaying the synchronous signal in two or more stages within one period of the synchronous signal, and a decision unit determining an optimum delay stage for image formation using data on intensities of the detection signal at the respective delay stages, wherein the setting means fixes delay time for delaying the synchronous signal at delay time corresponding to the delay stage determined by the decision unit.
Abstract:
An integrated circuit includes a photodetection region configured to receive incident photons. The photodetection region is configured to produce a plurality of charge carriers in response to the incident photons. The integrated circuit also includes at least one charge carrier storage region. The integrated circuit also includes a charge carrier segregation structure configured to selectively direct charge carriers of the plurality of charge carriers into the at least one charge carrier storage region based upon times at which the charge carriers are produced.
Abstract:
An inspection lamp for detection of fluorescent materials, such as dyes often added to refrigerant fluids for the purpose of detecting leaks. Multiple aspects of reducing a distracting speckle effect are described. For example, at least two aspects are combined. One speckle reduction aspect uses a diffuser. A second speckle reduction aspect is achieved by a laser device such as a laser diode that simultaneously outputs a large number of individual wavelengths across a significant bandwidth. A third aspect of despeckling the laser light includes vibrating or rotating optical components. A fourth aspect of despeckling includes fluorescence and broadband radiation from the laser being more visible through suitable eyewear than the laser radiation.
Abstract:
To detect an infinitesimal defect, highly precisely measure the dimensions of the detect, a detect inspection device is configured to comprise: a irradiation unit which irradiate light in a linear region on a surface of a sample; a detection unit which detect light from the linear region; and a signal processing unit which processes a signal obtained by detecting light and detecting a defect. The detection unit includes: an optical assembly which diffuses the light from the sample in one direction and forms an image in a direction orthogonal to the one direction; and a detection assembly having an array sensor in which detection pixels are positioned two-dimensionally, which detects the light diffused in the one direction and imaged in the direction orthogonal to the one direction, adds output signals of each of the detection pixels aligned in the direction in which the light is diffused, and outputs same.