公开(公告)号：US07501625B2

公开(公告)日：2009-03-10

申请号：US11442566

申请日：2006-05-30

Applicant: Hikaru Koyama ,  Hiroshi Makino ,  Mitsugu Sato

Inventor： Hikaru Koyama ,  Hiroshi Makino ,  Mitsugu Sato

IPC: G21K7/00

CPC classification number: H01J37/026 ,  H01J2237/0042 ,  H01J2237/0047 ,  H01J2237/2817

Abstract: A charge control electrode emitting photoelectrons is disposed just above a wafer (sample) in parallel thereto, and the electrode has a through hole so that ultraviolet light can be irradiated to the wafer through the charge control electrode. Specifically, a metal plate which is formed in mesh or includes one or plural holes is used as the charge control electrode. By disposing the charge control electrode just above the sample in parallel thereto, when negative voltage is applied to the electrode, electric field approximately perpendicular to the wafer is generated. Therefore, photoelectrons are efficiently absorbed in the wafer. Also, by using the charge control electrode having approximately the same size as that of the wafer, charges on a whole surface of the wafer can be removed collectively and uniformly. Therefore, time required for the process can be reduced.

Abstract translation: 发射光电子的电荷控制电极平行于晶片（样品）正上方，并且电极具有通孔，使得可以通过充电控制电极将紫外光照射到晶片。 具体地，使用形成为网状或包含一个或多个孔的金属板作为充电控制电极。 通过将电荷控制电极与样品平行放置在正上方，当向电极施加负电压时，产生大致垂直于晶片的电场。 因此，光电子被有效地吸收在晶片中。 此外，通过使用具有与晶片大致相同尺寸的电荷控制电极，可以集中均匀地去除晶片的整个表面上的电荷。 因此，可以减少该过程所需的时间。

公开(公告)号：US06507029B1

公开(公告)日：2003-01-14

申请号：US09255700

申请日：1999-02-23

Applicant: Norimasa Nishimura ,  Akira Shimase ,  Junzou Azuma ,  Asahiro Kuni ,  Hiroya Koshishiba

Inventor： Norimasa Nishimura ,  Akira Shimase ,  Junzou Azuma ,  Asahiro Kuni ,  Hiroya Koshishiba

IPC: H01J3730

CPC classification number: B82Y15/00 ,  H01J37/026 ,  H01J2237/0047 ,  H01J2237/28

Abstract: In an electron particle machine for observing, inspecting, processing or analyzing a semiconductor wafer as a substrate or a sample, a light source is installed in a preparation chamber. A chucking stage for chucking the semiconductor wafer with a chuck using static electricity is provided with parts for connecting to earth such that they are in contact with the chucked semiconductor wafer. After the chuck using static electricity is released after observation, inspection, process or analysis, a surface of the semiconductor wafer and the parts for connecting to earth are irradiated with light from the light source. This provides conductivity to the surface of the semiconductor wafer, so that charge accumulated on the semiconductor wafer is removed from the surface through the parts for connecting to earth.

Abstract translation: 在用于观察，检查，处理或分析作为基板或样品的半导体晶片的电子粒子机中，将光源安装在准备室中。 使用静电用卡盘夹住半导体晶片的夹持台设置有用于连接到地面的部件，使得它们与夹持的半导体晶片接触。 在观察，检查，处理或分析之后释放使用静电的卡盘后，用来自光源的光照射半导体晶片的表面和用于连接到地球的部分。 这为半导体晶片的表面提供导电性，从而通过用于连接到地球的部件从表面去除积聚在半导体晶片上的电荷。

公开(公告)号：US12125669B2

公开(公告)日：2024-10-22

申请号：US18362757

申请日：2023-07-31

Applicant: ASML Netherlands B.V.

Inventor： Ning Ye ,  Jun Jiang ,  Jian Zhang ,  Yixiang Wang

IPC: H01J37/28 ,  H01J37/244 ,  H01J37/26

CPC classification number: H01J37/28 ,  H01J37/244 ,  H01J37/265 ,  H01J2237/0047 ,  H01J2237/2817

Abstract: Apparatuses, systems, and methods for providing beams for controlling charges on a sample surface of charged particle beam system. In some embodiments, a module comprising a laser source configured to emit a beam. The beam may illuminate an area adjacent to a pixel on a wafer to indirectly heat the pixel to mitigate a cause of a direct photon-induced effect at the pixel. An electron beam tool configured to detect a defect in the pixel, wherein the defect is induced by the indirect heating of the pixel.

公开(公告)号：US20180233317A1

公开(公告)日：2018-08-16

申请号：US15431098

申请日：2017-02-13

Applicant: Applied Materials, Inc.

Inventor： Georg JOST ,  Ludwig LEDL ,  Bernhard G. MUELLER ,  George TZENG

IPC: H01J37/02 ,  H01J37/18 ,  H01J37/26

CPC classification number: H01J37/026 ,  H01J37/18 ,  H01J37/26 ,  H01J37/28 ,  H01J2237/0047

Abstract: A charge control apparatus for controlling charge on a substrate in a vacuum chamber is described. The apparatus includes a light source emitting a beam of radiation having a divergence; a mirror configured to reflect the beam of radiation, wherein a curvature of a mirror surface of the curved mirror is configured to reduce the divergence of the beam of radiation; and a mirror support configured to rotatably support the curved mirror, wherein a rotation of the mirror varies the direction of the beam of radiation.

公开(公告)号：US20170250052A1

公开(公告)日：2017-08-31

申请号：US15595214

申请日：2017-05-15

Applicant: APPLIED MATERIALS ISRAEL LTD.

Inventor： Alex GOLDENSHTEIN

IPC: H01J37/073 ,  H01J37/28

CPC classification number: H01J37/073 ,  H01J37/026 ,  H01J37/226 ,  H01J37/28 ,  H01J2237/0047 ,  H01J2237/04 ,  H01J2237/063 ,  H01J2237/2801 ,  H01J2237/2817

Abstract: A method and a system for imaging an object, the system may include electron optics that may be configured to scan a first area of the object with at least one electron beam; wherein the electron optics may include a first electrode; and light optics that may be configured to illuminate at least one target of (a) the first electrode and (b) the object, thereby causing an emission of electrons between the first electrode and the object.

公开(公告)号：US09105446B2

公开(公告)日：2015-08-11

申请号：US14376901

申请日：2013-01-28

Applicant: Hitachi High-Technologies Corporation

Inventor： Yasushi Ebizuka ,  Seiichiro Kanno ,  Makoto Nishihara ,  Masashi Fujita

IPC: H01J37/30 ,  H01J37/22 ,  H02N13/00 ,  H01J37/28 ,  H01J37/20

CPC classification number: H01J37/226 ,  H01J37/026 ,  H01J37/20 ,  H01J37/28 ,  H01J2237/0047 ,  H01J2237/06 ,  H01J2237/2007 ,  H01J2237/2801 ,  H02N13/00

Abstract: An object of the present invention is to provide a charged particle beam apparatus that effectively removes electrical charges from an electrostatic chuck.In order to achieve the above object, the charged particle beam apparatus of the present invention includes a sample chamber that maintains a space containing an electrostatic chuck mechanism (5) in a vacuum state; and in which the charged particle beam apparatus includes an ultraviolet light source (6) to irradiate ultraviolet light within the sample chamber, and a irradiation target member irradiated by the ultraviolet light; and the irradiation target member is placed perpendicular to the adsorption surface of the electrostatic chuck.

Abstract translation: 本发明的目的是提供一种有效地从静电卡盘去除电荷的带电粒子束装置。 为了实现上述目的，本发明的带电粒子束装置包括在真空状态下保持包含静电卡盘机构（5）的空间的样本室; 并且其中带电粒子束装置包括用于照射样品室内的紫外光的紫外光源和照射由紫外光照射的照射目标构件; 并且照射目标构件垂直于静电吸盘的吸附表面放置。

公开(公告)号：US08013315B2

公开(公告)日：2011-09-06

申请号：US11898358

申请日：2007-09-11

Applicant: Kenji Watanabe ,  Takeshi Murakami ,  Ryo Tajima ,  Masahiro Hatakeyama ,  Masatoshi Tsuneoka ,  Nobuharu Noji

Inventor： Kenji Watanabe ,  Takeshi Murakami ,  Ryo Tajima ,  Masahiro Hatakeyama ,  Masatoshi Tsuneoka ,  Nobuharu Noji

IPC: G21K5/10

CPC classification number: H01J37/28 ,  H01J37/026 ,  H01J37/153 ,  H01J37/29 ,  H01J2237/0047 ,  H01J2237/1532 ,  H01J2237/216

Abstract: A charged particle beam apparatus 300 for observing and estimating a sample W by applying a charged particle beam to sample W to detect secondary charged particles, such as electrons emitted from the sample, reflected electrons and backscattered electrons comprises astigmatism adjusting means 17 for adjusting astigmatism of the charged particle beam. Astigmatism adjusting means 17 is supplied with a correction voltage which maximizes a focal estimation value obtained from a pattern formed on sample W. Astigmatism adjusting means 17 is a multipole including a plurality of pairs of electrodes or coils facing each other to place the optical axis of the charged particle beam at the center. Also disclosed is a charged particle beam apparatus 400 capable of observation and estimation of a sample surface in a condition where no charge up exists over the whole sample W.

Abstract translation: 一种带电粒子束装置300，用于通过向样本W施加带电粒子束以检测从样本发射的电子，反射电子和反向散射电子的二次带电粒子来观察和估计样本W.包括用于调节像散的散光的散光调节装置 带电粒子束。 散光调节装置17被提供校正电压，该校正电压使得从样本W上形成的图案获得的焦点估计值最大化。散光调节装置17是包括多对电极或线圈彼此面对的多极，以将光轴 带电粒子束在中心。 还公开了一种能够在整个样品W上不存在电荷的情况下能够观察和估计样品表面的带电粒子束装置400。

公开(公告)号：US20070085005A1

公开(公告)日：2007-04-19

申请号：US11449650

申请日：2006-06-09

Applicant: Masaki Hasegawa ,  Hiroshi Makino ,  Hikaru Koyama ,  Zhaohui Cheng ,  Hisaya Murakoshi

Inventor： Masaki Hasegawa ,  Hiroshi Makino ,  Hikaru Koyama ,  Zhaohui Cheng ,  Hisaya Murakoshi

IPC: G21K7/00

CPC classification number: H01J37/026 ,  G01R31/307 ,  H01J37/29 ,  H01J2237/0045 ,  H01J2237/0047 ,  H01J2237/045 ,  H01J2237/2594 ,  H01J2237/2817

Abstract: In the present invention, the structure of an electrification control electrode is changed from a grid type to a slit type and thereby shadows are not formed when a wafer is irradiated with a beam. Further, a beam forming slit is disposed ahead of an electrification control slit, thus the electrification control slit is prevented from being irradiated with an electron beam for preliminary electrification, and thereby secondary electrons which disturb the control of the electrification are inhibited from being generated. The shape of the slit is designed so that the strength of an electron beam may gradually decrease toward both the ends of an electron beam irradiation region in the longitudinal direction thereof. Furthermore, a preliminary static eliminator to remove or reduce the unevenness in an electrification potential distribution which has undesirably been formed earlier is disposed.

Abstract translation: 在本发明中，充电控制电极的结构从栅格型切换为狭缝型，从而在用光束照射晶片时不形成阴影。 此外，在充电控制狭缝的前方设置有光束形成狭缝，防止了带电控制狭缝被用于预充电的电子束照射，从而抑制了妨碍电气控制的二次电子的产生。 狭缝的形状被设计成使得电子束的强度可以朝着电子束照射区域的纵向的两端逐渐减小。 此外，设置用于去除或减少不期望地形成的带电电位分布的不均匀性的初步除电器。

公开(公告)号：US20060289755A1

公开(公告)日：2006-12-28

申请号：US11442566

申请日：2006-05-30

Applicant: Hikaru Koyama ,  Hiroshi Makino ,  Mitsugu Sato

Inventor： Hikaru Koyama ,  Hiroshi Makino ,  Mitsugu Sato

IPC: G21K7/00

CPC classification number: H01J37/026 ,  H01J2237/0042 ,  H01J2237/0047 ,  H01J2237/2817

Abstract: A charge control electrode emitting photoelectrons is disposed just above a wafer (sample) in parallel thereto, and the electrode has a through hole so that ultraviolet light can be irradiated to the wafer through the charge control electrode. Specifically, a metal plate which is formed in mesh or includes one or plural holes is used as the charge control electrode. By disposing the charge control electrode just above the sample in parallel thereto, when negative voltage is applied to the electrode, electric field approximately perpendicular to the wafer is generated. Therefore, photoelectrons are efficiently absorbed in the wafer. Also, by using the charge control electrode having approximately the same size as that of the wafer, charges on a whole surface of the wafer can be removed collectively and uniformly. Therefore, time required for the process can be reduced.

公开(公告)号：US09673023B2

公开(公告)日：2017-06-06

申请号：US14710297

申请日：2015-05-12

Applicant: APPLIED MATERIALS ISRAEL LTD.

Inventor： Alex Goldenshtein

IPC: H01J37/28 ,  H01J37/22

CPC classification number: H01J37/073 ,  H01J37/026 ,  H01J37/226 ,  H01J37/28 ,  H01J2237/0047 ,  H01J2237/04 ,  H01J2237/063 ,  H01J2237/2801 ,  H01J2237/2817

Abstract: A method and a system for imaging an object, the system may include electron optics that may be configured to scan a first area of the object with at least one electron beam; wherein the electron optics may include a first electrode; and light optics that may be configured to illuminate at least one target of (a) the first electrode and (b) the object, thereby causing an emission of electrons between the first electrode and the object.