公开(公告)号：US08673753B1

公开(公告)日：2014-03-18

申请号：US13692815

申请日：2012-12-03

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Zhimin Wan

IPC: H01L21/425

CPC classification number: H01J37/3171 ,  H01J37/302 ,  H01J2237/047 ,  H01J2237/30472 ,  H01L21/26513 ,  H01L21/26586 ,  H01L29/66803

Abstract: In a multi-energy ion implantation process, an ion implanting system having an ion source, an extraction assembly, and an electrode assembly is used to implant ions into a target. An ion beam having a first energy may be generated using the ion source and the extraction assembly. A first voltage may be applied across the electrode assembly. The ion beam may enter the electrode assembly at the first energy, exit the electrode assembly at a second energy, and implant ions into the target at the second energy. A second voltage may be applied across the electrode assembly. The ion beam may enter the electrode assembly at the first energy, exit the electrode assembly at a third energy, and implants ions into the target at the third energy. The third energy may be different from the second energy.

Abstract translation: 在多能离子注入工艺中，使用具有离子源，提取组件和电极组件的离子注入系统将离子注入到靶中。 可以使用离子源和提取组件产生具有第一能量的离子束。 可以跨电极组件施加第一电压。 离子束可以以第一能量进入电极组件，以第二能量离开电极组件，并以第二能量将离子注入到靶中。 可以在电极组件上施加第二电压。 离子束可以以第一能量进入电极组件，以第三能量离开电极组件，并以第三能量将离子注入靶中。 第三能量可能与第二能量不同。

公开(公告)号：US20130248732A1

公开(公告)日：2013-09-26

申请号：US13845582

申请日：2013-03-18

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Tatsuya ASAHATA ,  Yasuhiko SUGIYAMA ,  Hiroshi OBA

IPC: H01J37/10

CPC classification number: H01J37/10 ,  H01J37/302 ,  H01J37/3056 ,  H01J2237/0206 ,  H01J2237/04924 ,  H01J2237/216 ,  H01J2237/24535 ,  H01J2237/31749

Abstract: An ion beam apparatus including: an ion source configured to emit an ion beam; a condenser lens electrode configured to condense the ion beam; a condenser lens power source configured to apply a voltage to the condenser lens electrode; a storage portion configured to store, a first voltage value, a second voltage value, a third voltage value, and a fourth voltage value; and a control portion configured to retrieve the third voltage value from the storage portion and set the retrieved third voltage value to the condenser lens power source when an observation mode is switched to a wide-range observation mode, and retrieve the fourth voltage value from the storage portion and set the retrieved fourth voltage value to the condenser lens power source when a processing mode is switched to the wide-range observation mode.

Abstract translation: 一种离子束装置，包括：被配置为发射离子束的离子源; 配置成冷凝离子束的聚光透镜电极; 聚光透镜电源，被配置为向聚光透镜电极施加电压; 存储部，被配置为存储第一电压值，第二电压值，第三电压值和第四电压值; 以及控制部，被配置为当观察模式切换到宽范围观察模式时，从存储部分检索第三电压值，并将检索到的第三电压值设置为聚光透镜电源，并且从第 存储部分，并且当处理模式切换到宽范围观察模式时，将获取的第四电压值设置到聚光透镜电源。

公开(公告)号：US20130099131A1

公开(公告)日：2013-04-25

申请号：US13713251

申请日：2012-12-13

Applicant: Axcelis Technologies, Inc.

Inventor： Edward C. Eisner

IPC: H01J3/14 ,  G21K5/10

CPC classification number: H01J3/14 ,  G21K5/10 ,  H01J37/302 ,  H01J37/3171 ,  H01J2237/049 ,  H01J2237/30477 ,  H01J2237/30483

Abstract: The present invention relates to a method and apparatus for varying the cross-sectional shape of an ion beam, as the ion beam is scanned over the surface of a workpiece, to generate a time-averaged ion beam having an improved ion beam current profile uniformity. In one embodiment, the cross-sectional shape of an ion beam is varied as the ion beam moves across the surface of the workpiece. The different cross-sectional shapes of the ion beam respectively have different beam profiles (e.g., having peaks at different locations along the beam profile), so that rapidly changing the cross-sectional shape of the ion beam results in a smoothing of the beam current profile (e.g., reduction of peaks associated with individual beam profiles) that the workpiece is exposed to. The resulting smoothed beam current profile provides for improved uniformity of the beam current and improved workpiece dose uniformity.

Abstract translation: 本发明涉及一种用于在离子束在工件的表面上扫描时改变离子束截面形状的方法和装置，以产生具有改进的离子束电流分布均匀性的时间平均离子束 。 在一个实施例中，离子束的横截面形状随着离子束移动穿过工件表面而变化。 离子束的不同横截面形状分别具有不同的光束轮廓（例如，沿着光束轮廓在不同位置处具有峰值），使得快速改变离子束的横截面形状导致光束电流的平滑 工件暴露于的轮廓（例如，减小与各个梁轮廓相关联的峰）。 所得到的平滑光束电流分布提供了改进的束电流均匀性和改进的工件剂量均匀性。

公开(公告)号：US08421039B2

公开(公告)日：2013-04-16

申请号：US13077329

申请日：2011-03-31

Applicant: Edward C. Eisner

Inventor： Edward C. Eisner

IPC: G21K5/10 ,  H01J3/12

CPC classification number: H01J3/14 ,  G21K5/10 ,  H01J37/302 ,  H01J37/3171 ,  H01J2237/049 ,  H01J2237/30477 ,  H01J2237/30483

Abstract: The present invention relates to a method and apparatus for varying the cross-sectional shape of an ion beam, as the ion beam is scanned over the surface of a workpiece, to generate a time-averaged ion beam having an improved ion beam current profile uniformity. In one embodiment, the cross-sectional shape of an ion beam is varied as the ion beam moves across the surface of the workpiece. The different cross-sectional shapes of the ion beam respectively have different beam profiles (e.g., having peaks at different locations along the beam profile), so that rapidly changing the cross-sectional shape of the ion beam results in a smoothing of the beam current profile (e.g., reduction of peaks associated with individual beam profiles) that the workpiece is exposed to. The resulting smoothed beam current profile provides for improved uniformity of the beam current and improved workpiece dose uniformity.

Abstract translation: 本发明涉及一种用于在离子束在工件的表面上扫描时改变离子束截面形状的方法和装置，以产生具有改进的离子束电流分布均匀性的时间平均离子束 。 在一个实施例中，离子束的横截面形状随着离子束移动穿过工件表面而变化。 离子束的不同横截面形状分别具有不同的光束轮廓（例如，沿着光束轮廓在不同位置处具有峰值），使得快速改变离子束的横截面形状导致光束电流的平滑 工件暴露于的轮廓（例如，减小与各个梁轮廓相关联的峰）。 所得到的平滑光束电流分布提供了改进的束电流均匀性和改进的工件剂量均匀性。

公开(公告)号：US08378313B2

公开(公告)日：2013-02-19

申请号：US13077112

申请日：2011-03-31

Applicant: Edward C. Eisner ,  Andy Ray ,  Bo H. Vanderberg

Inventor： Edward C. Eisner ,  Andy Ray ,  Bo H. Vanderberg

IPC: H01J3/26 ,  H01J37/147

CPC classification number: H01J37/3171 ,  G21K5/02 ,  G21K5/04 ,  G21K5/10 ,  H01J37/302 ,  H01J2237/30483

Abstract: One embodiment relates to an ion implanter. The ion implanter includes an ion source to generate an ion beam, as well as a scanner to scan the ion beam across a surface of a workpiece along a first axis. The ion implanter also includes a deflection filter downstream of the scanner to ditheredly scan the ion beam across the surface of the workpiece along a second axis.

Abstract translation: 一个实施例涉及一种离子注入机。 离子注入机包括用于产生离子束的离子源以及沿着第一轴沿着工件的表面扫描离子束的扫描仪。 离子注入机还包括在扫描器下游的偏转滤波器，以沿着第二轴度将离子束沿工件的表面抖动扫描。

公开(公告)号：US20120009692A1

公开(公告)日：2012-01-12

申请号：US12831699

申请日：2010-07-07

Applicant: Keung Hui ,  Chun-Lin Chang ,  Jong-I Mou

Inventor： Keung Hui ,  Chun-Lin Chang ,  Jong-I Mou

IPC: H01L21/66 ,  H01J37/317 ,  H01J37/20

CPC classification number: C23C14/48 ,  H01J37/302 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/30461 ,  H01J2237/31703 ,  H01L21/265 ,  H01L22/14

Abstract: A system and method for controlling a dosage profile is disclosed. An embodiment comprises separating a wafer into components of a grid array and assigning each of the grid components a desired dosage profile based upon a test to compensate for topology differences between different regions of the wafer. The desired dosages are decomposed into directional dosage components and the directional dosage components are translated into scanning velocities of the ion beam for an ion implanter. The velocities may be fed into an ion implanter to control the wafer-to-beam velocities and, thereby, control the implantation.

Abstract translation: 公开了一种用于控制剂量分布的系统和方法。 一个实施例包括将晶片分离成网格阵列的组件，并且基于测试来分配每个网格组件所需的剂量分布，以补偿晶片的不同区域之间的拓扑差异。 期望的剂量被分解为定向剂量组分，并且定向剂量组分转化成用于离子注入机的离子束的扫描速度。 速度可以被馈送到离子注入机中以控制晶片到光束的速度，从而控制注入。

公开(公告)号：US07987072B2

公开(公告)日：2011-07-26

申请号：US12348771

申请日：2009-01-05

Applicant: Janet Teshima ,  Daniel E. Partin ,  James E. Hudson

Inventor： Janet Teshima ,  Daniel E. Partin ,  James E. Hudson

IPC: G01R27/28

CPC classification number: H01J37/28 ,  H01J37/302 ,  H01J37/304 ,  H01J37/3056 ,  H01J2237/24592 ,  H01J2237/2485 ,  H01J2237/2817 ,  H01J2237/31745 ,  H01L21/67253 ,  H01L21/67276

Abstract: The present invention provides methods, devices, and systems for analyzing defects in an object such as a semiconductor wafer. In one embodiment, it provides a method of characterizing defects in semiconductor wafers during fabrication in a semiconductor fabrication facility. This method comprises the following actions. The semiconductor wafers are inspected to locate defects. Locations corresponding to the located defects are then stored in a defect file. A dual charged-particle beam system is automatically navigated to the vicinity defect location using information from the defect file. The defect is automatically identified and a charged particle beam image of the defect is then obtained. The charged particle beam image is then analyzed to characterize the defect. A recipe is then determined for further analysis of the defect. The recipe is then automatically executed to cut a portion of the defect using a charged particle beam. The position of the cut is based upon the analysis of the charged particle beam image. Ultimately, a surface exposed by the charged particle beam cut is imaged to obtain additional information about the defect.

Abstract translation: 本发明提供了用于分析诸如半导体晶片的物体中的缺陷的方法，装置和系统。 在一个实施例中，其提供了在半导体制造设备中制造期间表征半导体晶片中的缺陷的方法。 该方法包括以下动作。 检查半导体晶片以定位缺陷。 然后将与定位的缺陷相对应的位置存储在缺陷文件中。 使用来自缺陷文件的信息，双电荷粒子束系统被自动导航到附近的缺陷位置。 自动识别缺陷，得到缺陷的带电粒子束图像。 然后分析带电粒子束图像以表征缺陷。 然后确定配方以进一步分析缺陷。 然后自动执行配方以使用带电粒子束切割缺陷的一部分。 切割的位置是基于带电粒子束图像的分析。 最终，通过带电粒子束切割暴露的表面被成像以获得关于缺陷的附加信息。

公开(公告)号：US07675049B2

公开(公告)日：2010-03-09

申请号：US11706053

申请日：2007-02-14

Applicant: Michael Schmidt ,  Jeff Blackwood

Inventor： Michael Schmidt ,  Jeff Blackwood

IPC: H01J37/26 ,  G21K5/04

CPC classification number: B23K15/06 ,  B23K15/0086 ,  B23K2101/40 ,  C23C14/30 ,  H01J37/302 ,  H01J37/3056

Abstract: A coating is applied to a work piece in a charged particle beam system without directing the beam to work piece. The coating is applied by sputtering, either within the charged particle beam vacuum chamber or outside the charged particle beam vacuum chamber. In one embodiment, the sputtering is performed by directing the charged particle beam to a sputter material source, such as a needle from a gas injection system. Material is sputtered from the sputter material source onto the work piece to form, for example, a protective or conductive coating, without requiring the beam to be directed to the work piece, thereby reducing or eliminating damage to the work piece.

Abstract translation: 将涂层施加到带电粒子束系统中的工件上，而不将梁束导向工件。 涂层通过溅射施加，或者在带电粒子束真空室内或者带电粒子束真空室外。 在一个实施例中，通过将带电粒子束引导到溅射材料源（例如来自气体注入系统的针）来进行溅射。 材料从溅射材料源溅射到工件上以形成例如保护性或导电性涂层，而不需要将光束引导到工件，从而减少或消除对工件的损坏。

公开(公告)号：US07626183B2

公开(公告)日：2009-12-01

申请号：US11850423

申请日：2007-09-05

Applicant: Reinhard Wagner ,  Wesley Skinner

Inventor： Reinhard Wagner ,  Wesley Skinner

IPC: G21K5/04 ,  G21K5/10

CPC classification number: H01J37/3053 ,  H01J37/302 ,  H01J2237/0812 ,  H01J2237/30461 ,  H01L21/2633 ,  H01L21/28123 ,  H01L21/3065 ,  H01L22/12 ,  H01L22/14 ,  H01L22/20 ,  H01L27/1087 ,  H01L29/66181

Abstract: Embodiments of methods of modifying surface features on a workpiece with a gas cluster ion beam are generally described herein. Other embodiments may be described and claimed.

Abstract translation: 这里通常描述使用气体簇离子束改变工件上的表面特征的方法的实施例。 可以描述和要求保护其他实施例。

公开(公告)号：US07579604B2

公开(公告)日：2009-08-25

申请号：US11445722

申请日：2006-06-02

Applicant: John W. Vanderpot ,  Yongzhang Huang

Inventor： John W. Vanderpot ,  Yongzhang Huang

IPC: G21K5/10 ,  H01J37/08

CPC classification number: H01J37/244 ,  H01J37/045 ,  H01J37/09 ,  H01J37/302 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/026 ,  H01J2237/028 ,  H01J2237/30433 ,  H01J2237/31705

Abstract: A system, method, and apparatus for mitigating contamination associated with ion implantation are provided. An ion source, end station, and mass analyzer positioned between the ion source and the end station are provided, wherein an ion beam is formed from the ion source and selectively travels through the mass analyzer to the end station, based on a position of a beam stop assembly. The beam stop assembly selectively prevents the ion beam from entering and/or exiting the mass analyzer, therein minimizing contamination associated with an unstable ion source during transition periods such as a start-up of the ion implantation system.

Abstract translation: 提供了用于减轻与离子注入相关的污染的系统，方法和装置。 提供了一种位于离子源和终端之间的离子源，终端站和质量分析器，其中离子源由离子源形成，并且基于位置，选择性地通过质量分析器传送到终端站 光束挡块组件。 光束停止组件选择性地防止离子束进入和/或离开质量分析器，其中最小化在诸如离子注入系统的启动的过渡期间与不稳定离子源相关联的污染。